| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2024-11 |
研討會論文
|
The fabrication and characterization of perovskite solar cells with the stacked bromine containing MAPbI3 Layers |
Manjunatha SN, Y. C. Li, C. H. Chang, M. Sharma, C. H. Yu, C. W. Hsu, W. C. She, Y. T. Huang, C. K. Chang, C. L. Tsai |
|
| 2024-06 |
期刊論文
|
Utilizing Raman spectroscopy for urinalysis to diagnose acute kidney injury stages in cardiac surgery patients |
M. Sharma, C. L. Tsai, Y. C. Li, C. C. Lee, Y. L. Hsieh, C. H. Chang, S. W. Chen, and L. B. Chang |
Renal Failure
|
| 2024-03 |
期刊論文
|
Enhancing the photovoltaic responses of MAPbI3 poly-crystalline perovskite films via adjusting the properties of PEDOT:PSS hole transport material with a low-polarity solvent treatment process |
C. L. Tsai, S.N. Manjunatha, M. Sharma, S. H. Chang, Y. L. Hsieh, L. B. Chang, and C. H. Chang |
Materials Science in Semiconductor Processing
|
| 2024-03 |
期刊論文
|
Optical wireless communications with InGaN multiple-quantum-well photodiodes grown with the prestrained superlattice interlayer for light detection |
C. L. Tsai, M. Sharma, Y. L. Hsieh, S.N. Manjunatha, A. Das, C. K. Xu, H. T. Fu, L. B. Chang, and S. C. Ko |
Materials Science in Semiconductor Processing
|
| 2024-01 |
技術報告
|
設計與研製具氮化鋁鎵/氮化鋁超晶格吸收層之非平面型金屬-半導體-金屬光電二極體及其在紫外光通訊的應用(II) |
蔡家龍 |
|
| 2023-10 |
研討會論文
|
Enhancing performance of perovskite solar cells With HMDS surface modification |
S. N. Manjunatha, C. K. Xu, C. Y. Chiu, H. T. Fu, K. Y. Lee, M. Sharma, and C. L. Tsai |
|
| 2023-10 |
研討會論文
|
Fabrication and characterization of multichannel GaN HEMTs |
M. Sharma, K. Y. Lee, C. K. Xu, H. T. Fu, S. N. Manjunatha, and C. L. Tsai |
|
| 2023-07 |
期刊論文
|
Identification of healthy tissue from malignant tissue in surgical margin using Raman spectroscopy in oral cancer surgeries |
M. Sharma, Y. C. Li, S. N. Manjunatha, C. L. Tsai, R. M. Lin, S. F. Huang, and L. B. Chang |
Biomedicines
|
| 2023-07 |
研討會論文
|
InGaN multiple-quantum-well light-emitting diodes grown with an underlying superlattice for light detection |
C. L. Tsai, T. W. Wang, C. Y. Chiu, S. N. Manjunatha, M. Sharma, J. R. Zhang, K. Y. Lee, H. T. Fu, and C. K. Xu |
|
| 2023-05 |
期刊論文
|
Properties of FAPbI3-based alloy perovskite thin films and their application in solar cells |
C. L. Tsai, S. N. Manjunatha, S. H. Chang, M. J. Jeng, L. B. Chang, C. H. Chang, M. Sharma, and C. T. Yuan |
Processes
|
| 2023-03 |
期刊論文
|
AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection |
C. L. Tsai, T. W. Wang, S.N. Manjunatha, M. Sharma, A. Das, C. W. Chen, J. R. Zhang, Y. S. Chen, and S. C. Ko |
Materials Science in Semiconductor Processing
|
| 2022-10 |
研討會論文
|
Improved photoresponsivity of metal-semiconductor-metal UV photodetector with AlGaN/AlN superlattice absorption layer |
J. R. Zhang, T. W. Wang, Y. S. Chen, K. Y. Lee, H. T. Fu, S. N. Manjunatha, M. Sharma, and C. L. Tsai |
|
| 2022-10 |
研討會論文
|
Optical and structural property of MAPbI3 perovskite solar cells with Br additives |
S. N. Manjunatha, M. J. Jeng, L. B. Chang, and C. L. Tsai |
|
| 2022-08 |
期刊論文
|
Raman spectral characterization of urine for rapid diagnosis of acute kidney injury |
M. J. Jeng, M. Sharma, C. C. Lee, Y. S. Lu, C. L. Tsai, C. H. Chang, S. W. Chen, R. M. Lin, and L. B. Chang |
J. Clin. Med.
|
| 2022-05 |
技術報告
|
設計與研製具氮化鋁鎵/氮化鋁超晶格吸收層之非平面型金屬-半導體-金屬光電二極體及其在紫外光通訊的應用(I) |
蔡家龍 |
|
| 2022-02 |
期刊論文
|
Underwater optical wireless communications with InGaN LEDs grown with an asymmetric multiple quantum well for light emission or detection |
C. L. Tsai, T. W. Wang, Y. C. Li, A. Das, C. W. Chen, Y. J. Chen, and S. C. Ko |
IEEE Photon. J.
|
| 2021-11 |
研討會論文
|
GaN metal-semiconductor-metal (MSM) photodiode made from GaN-on-Si HEMT epiwafer for UV light detection |
T. W. Wang, C. W. Chen, Y. S. Chen, Y. J. Chen, and C. L. Tsai |
|
| 2021-05 |
期刊論文
|
A surface acoustic wave sensor with a microfluidic channel for detecting C-reactive protein |
M. J. Jeng, Y. C. Li, M. Sharma, C. W. Chen, C. L. Tsai, Y. H. Lin, S. F. Huang, L. B. Chang, and C. S. Lai |
Chemosensors
|
| 2021-04 |
期刊論文
|
Fabrication and characterization of dual functional InGaN LED arrays as the optical transmitter and receiver for optical wireless communications |
C. L. Tsai, T. W. Wang, Y. C. Lu, A. Das, S. H. Chang, and S. C. Ko |
IEEE Photon. J.
|
| 2021-01 |
期刊論文
|
Anti-solvent mixture-mediated reduction of photocurrent hysteresis in high-impurity perovskite precursor based MAPbI3 solar cells |
C. Y. Li, Y. S. Liao, D. Thakur, A. Chandel, S. E. Chiang, J. R. Wu, P. H. Lee, C. L. Tsai, C. C. Yang, Y. L. Zhong, J. L. Shen, and S. H. Chang |
Solar Energy
|
| 2021-01 |
技術報告
|
設計與研製可應用於光通訊之鈣鈦礦基材光電元件 |
蔡家龍 |
|
| 2020-12 |
研討會論文
|
Effect of ICBA:modified-C60 electron transfer layer on the structural and optical properties of perovskite light-emitting diodes (PeLEDs) |
Chia-Lung Tsai, Yi-Chen Lu, Chia-Yu Yu, Chia-Wei Chen, Chih-Min Yu |
|
| 2020-11 |
期刊論文
|
Surface Acoustic Wave Sensor for C-Reactive Protein Detection |
M. J. Jeng, M. Sharma, Y. C. Li, Y. C. Lu, C. Y. Yu, C. L. Tsai, S. F. Huang, L. B. Chang, and C. S. Lai |
Sensors
|
| 2020-10 |
研討會論文
|
Fabrication and characterization of efficient InGaN LEDs and their application in optical wireless communications |
T. W. Wang, C. W. Chen, Y. C. Lu, C. Y. Yu, and C. L. Tsai |
|
| 2020-02 |
期刊論文
|
Bright and fast-response perovskite light-emitting diodes with an ICBA:modified-C60 nanocomposite electrical confinement layer |
C. L. Tsai, Y. C. Lu, S. E. Chiang, C. M. Yu, H. M. Cheng, C. L. Hsu, K. Y. Chiu, and S. H. Chang |
Nanoscale
|
| 2020-01 |
期刊論文
|
Heterojunction bipolar light-emitting transistors (HBLETs) fabricated with a lateral emission geometry for real-time optical wireless transmission |
C. L. Tsai, Y. C. Lu, C. M. Yu, C. Y. Yu, S. C. Ko, and M. C. Wu |
Optical Materials
|
| 2019-12 |
技術報告
|
水下無線光通訊系統之開發 |
蔡家龍 |
|
| 2019-10 |
期刊論文
|
InGaN LEDs fabricated with parallel-connected multi-pixel geometry for underwater optical communications |
C. L. Tsai, Y. C. Lu, and S. H. Chang |
Optics and Laser Technology
|
| 2019-10 |
研討會論文
|
Fabrication and Characterization of InGaN LED arrays with 4×4 pixels |
Y. C. Lu, C. M. Yu, C. Y. Yu, C. C. Liao, and C. L. Tsai |
|
| 2019-05 |
研討會論文
|
Fabrication and characterization of edge-emitting heterojunction bipolar light-emitting transistors (HBLETs) |
C. L. Tsai, Y. C. Lu, C. Y. Yu, and Y. C. Yu |
|
| 2018-12 |
技術報告
|
設計與研製應用於自由空間光通訊系統之異質接面雙載子發光電晶體 |
蔡家龍 |
|
| 2018-10 |
期刊論文
|
Epitaxial growth of InGaN multiple-quantum-well LEDs with improved characteristics and their application in underwater
optical wireless communications |
C. L. Tsai, Y. C. Lu, C. M. Yu, and Y. J. Chen |
IEEE Trans. Electron Devices
|
| 2018-08 |
研討會論文
|
Development of light-emitting diode array-based optical communications |
C. L. Tsai, Y. C. Lu, C. Y. Yu, and Y. C. Tu |
|
| 2018-05 |
期刊論文
|
Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering |
C. L. Tsai, Y. C. Lu, and S. H. Chang |
Nanotechnology
|
| 2017-12 |
技術報告
|
新穎具有石墨烯透明導電層之薄膜型共振腔發光二極體陣列及其在可見光通訊的應用(II) |
蔡家龍 |
|
| 2017-08 |
研討會論文
|
Fabrication and characterization of the substrateless GaN-on-Si LEDs with a metal can package |
C. L. Tsai, Y. C. Lu, C. Y. Yu, and Y. C. Tu |
|
| 2017-04 |
期刊論文
|
Fabrication and characterization of Si substrate-free InGaN light-emitting diodes and their application in visible light communications |
C. L. Tsai, Y. C. Li, Y. C. Lu, and S. H. Chang |
IEEE Photon. J.
|
| 2017-01 |
期刊論文
|
Interplay between nucleation and crystal growth during the formation of CH3NH3PbI3 thin films and their application in solar cells |
C. C. Chen, S. H. Chang, L. C. Chen, C. L. Tsai, H. M. Cheng, W. C. Huang, W. N. Chen, Y. C. Lu, Z. L. Tseng, K. Y. Chiu, S. H. Chen, and C. G. Wu |
Solar Energy Materials and Solar Cells
|
| 2016-12 |
技術報告
|
新穎具有石墨烯透明導電層之薄膜型共振腔發光二極體陣列及其在可見光通訊的應用 |
蔡家龍 |
|
| 2016-07 |
期刊論文
|
Resonant-cavity light-emitting diodes (RCLEDs) made from a simple dielectric coating of transistor outline (TO)-can packaged InGaN LEDs for visible light communications |
C. L. Tsai, Y. C. Lu, and S. C. Ko |
IEEE Trans. Electron Devices
|
| 2016-06 |
研討會論文
|
A simple method to fabricate a near-UV resonant-cavity light-emitting diode (RCLED) through the dielectric coatings of a transistor outline-can (TO-Can) packaged InGaN LED |
C. L. Tsai, C. C. Liao, and Y. C. Lu |
|
| 2016-02 |
期刊論文
|
Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs |
C. L. Tsai |
J. Lumin.
|
| 2015-10 |
期刊論文
|
Improving the efficiency of CH3NH3PbI3 based photovoltaics by tuning the work function of the PEDOT:PSS hole transport layer |
S. H. Chang, K. F. Lin, K. Y. Chiu, C. L. Tsai, H. M. Cheng, S. C. Yeh, W. T. Wu, W. N. Chen, C. T. Chen, S. H. Chen, and C. G. Wu |
Solar Energy
|
| 2015-10 |
期刊論文
|
Real-time optical wireless transmissions of digital TV signals using white InGaN LEDs grown with an asymmetric quantum barrier |
C. L. Tsai, and Y. J. Chen |
Opt. Express
|
| 2015-10 |
技術報告
|
新穎具石墨烯透明導電層/模態過濾器之氧化侷限面射型雷射陣列及其在光纖通訊的應用 |
蔡家龍 |
|
| 2015-05 |
研討會論文
|
InGaN LEDs grown with underlying In0.1Ga0.9N/GaN superlattices as an electron emitter layer |
C. L. Tsai, Y. S. Yen, S. Y. Chou, S. C. Lu, and W. C. Wu |
|
| 2015-02 |
期刊論文
|
SU-8 planarized InGaN light-emitting diodes with multipixel emission geometry for visible light communications |
C. L. Tsai, and C. T. Yen |
IEEE Photon. J.
|
| 2014-11 |
技術報告
|
開發具有可見光通訊能力之LED智慧照明系統(I) |
蔡家龍 |
|
| 2014-08 |
期刊論文
|
High-speed and high-light output power of InGaAs/GaAs HBLETs with an InMoOx contact |
H. J. Chang, T. H. Huang, C. L. Tsai, C. L. Ho, and M. C. Wu |
IEEE Photon. Technol. Lett.
|
| 2014-05 |
期刊論文
|
Effects of asymmetric quantum wells on the structural and optical properties of InGaN-based light-emitting diodes |
C. L. Tsai, and W. C. Wu |
Materials
|
| 2014-05 |
研討會論文
|
SU-8 planarized InGaN light-emitting diode with the multipixel emission geometry |
Wei-Che Wu, Yen-Jen Chen, Chih-Ta Yen, Chia-Lin Chang, Wei-Jhih Huang, Chia-Lung Tsai |
|
| 2013-09 |
期刊論文
|
Line-of-sight visible light communications with InGaN-based resonant cavity LEDs |
C. L. Tsai, and Z. F. Xu |
IEEE Photon. Technol. Lett.
|
| 2013-08 |
研討會論文
|
InGaN light-emitting diodes with an asymmetric multiple quantum well |
Chia-Lung Tsai, Wei-Jhih Huang, Wei-Che Wu, Chih-Ta Yen, Chia-Lin Chang |
|
| 2013-08 |
技術報告
|
設計與研製應用於固態照明之近紫外光微型共振腔發光二極體陣列 |
蔡家龍 |
|
| 2013-06 |
技術報告
|
開發應用於聚光燈具之半導體光源 |
蔡家龍 |
|
| 2013-04 |
期刊論文
|
InGaN-based resonant-cavity light-emitting diodes fabricated with a Ta2O5/SiO2 distributed Bragg reflector and metal reflector for visible light communications |
C. L. Tsai, C. T. Yen, W. J. Huang, Z. F. Xu, and S. C. Ko |
J. Display Technol.
|
| 2013-02 |
期刊論文
|
Electrodeposition of CuIn1−xGaxSe2 solar cells with a periodically-textured surface for efficient light collection |
C. L. Tsai, K. M. Huang, and M. J. Jeng |
Materials Science in Semiconductor Processing
|
| 2012-11 |
研討會論文
|
Resonant-cavity LEDs use in light communication |
S. C. Ko, C. L. Tsai, and Z. F. Xu |
|
| 2012-09 |
研討會論文
|
InGaN light-emitting diodes with a reduced barrier thickness |
C. L. Tsai, W. J. Huang, C. T. Yen, C. C. Lin, C. Y Chou, and Z. F. Xu |
|
| 2012-03 |
研討會論文
|
Electrodeposition of CuIn1-xGaxSe2 solar cells on a transparent conducting back contact |
K. M. Huang, C. L. Tsai, C. Y Chou, W. J. Huang, and M. C. Wu |
|
| 2012-02 |
期刊論文
|
Effects of an asymmetric barrier layer on the structural and optical properties of InGaN LEDs |
C. L. Tsai, Z. F. Xu, W. J. Huang, and C. T. Yen |
J. Electrochemical Society
|
| 2012-01 |
期刊論文
|
1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer |
C. L. Tsai, C. T. Yen, C. Y. Chou, S. J. Chang, M. C. Wu |
Optics and Laser Technology
|
| 2012-01 |
技術報告
|
具多層介質抗反射膜/繞射光柵結構之二硒化銅銦鎵(CIGS)薄膜太陽能電池的設計與研製(II) |
蔡家龍 |
|
| 2011-12 |
研討會論文
|
Fabrication and characterization of oxide-confined 850-nm VCSELs for biosensing applications |
C. L. Tsai, C. Y. Chou, and Z. F. Xu |
|
| 2011-11 |
研討會論文
|
Effect of DBR mirror pairs in resonant-cavity LED |
S. C. Ko, Y. S. Lee, and C. L. Tsai |
|
| 2011-08 |
技術報告
|
設計與研製應用於生物感測之陣列式半導體雷射 |
蔡家龍 |
|
| 2011-07 |
研討會論文
|
Fabrication and characterization of 1.3 μm strain-compensated InGaAsP buried heterostructure laser diodes with AlInAs electron blocking layer |
C. L. Tsai, and Z. F. Xu |
|
| 2011-06 |
研討會論文
|
Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE) |
C. L. Tsai, Z. F. Xu, Y. S. Lee, and G. C. Fan |
|
| 2011-04 |
期刊論文
|
Effects of hydrogen treatment on ohmic contacts to p-type GaN films |
B. R. Huang, C. H. Chou, W. C. Ke, Y. L. Chou, C. L. Tsai, and M. C. Wu |
Applied Surface Science
|
| 2011-04 |
期刊論文
|
Improvement of surface emission for GaN-based light-emitting diodes with a metal-via-hole structure embedded in a reflector |
Y. L. Chou, R. M. Lin, M. H. Tung, C. L. Tsai, J. C. Li, and M. C. Wu |
IEEE Photon. Technol. Lett.
|
| 2011-02 |
期刊論文
|
Effects of InGaN/GaN superlattice absorption layers on the structural and optical properties of InGaN solar cells |
C. L. Tsai, G. C. Fan, and Y. S. Lee |
J. Vac. Sci. Technol. B
|
| 2011-01 |
期刊論文
|
Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes |
C. L. Tsai, G. C. Fan, and Y. S. Lee |
Appl. Phys. A
|
| 2010-10 |
期刊論文
|
10-Gb/s planar InGaAs P-I-N photodetectors |
Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, S. P. Chang, and W. Line |
IEEE Sensors Journal
|
| 2010-08 |
技術報告
|
設計與研製具備微光學繞射光柵之薄膜型InGaN太陽能電池 |
蔡家龍 |
|
| 2010-06 |
研討會論文
|
InGaN multiple quantum wells with strain-compensated Al0.03Ga0.97N-In0.01Ga0.99N superlattice barrier |
C. L. Tsai, G. S. Liu, Y. S. Lee, and G. C. Fan |
|
| 2010-02 |
期刊論文
|
Substrate-free large gap InGaN solar cells with bottom reflector |
C. L. Tsai, G. S. Liu, G. C. Fan, and Y. S. Lee |
Solid-State Electron.
|
| 2010-01 |
期刊論文
|
Enhanced luminescence of InGaN light-emitting diodes with strain-compensated superlattice barriers |
C. L. Tsai, G. S. Liu, Y. S. Lee, and G. C. Fan |
J. Electrochemical Society
|
| 2009-11 |
研討會論文
|
Realization of TO packaged high-speed InGaAsP buried-heterostructure laser diodes by using a Fe-doped InP layer |
C. L. Tsai, G. S. Liu, Y. S. Lee, G. C. Fan, M. C. Wu and W. Lin |
|
| 2009-10 |
期刊論文
|
1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-can package for optical fiber communications |
C. L. Tsai, Y. L. Chou, Y. S. Wang, S. J. Chang, M. C. Wu, and W. Line |
J. Electrochemical Society
|
| 2009-09 |
期刊論文
|
Improved mode stability of long-wavelength GaInAsN vertical-cavity surface-emitting lasers by using the selective Ge-coating layer |
C. L. Tsai, J. C. Huang, Y. L. Chou, F. M. Lee, and M. C. Wu |
Electrochemical and Solid-State Letters
|
| 2009-08 |
技術報告
|
設計與研製應用於光纖通訊之同調耦合垂直共振腔面射型雷射陣列 |
蔡家龍 |
|
| 2009-08 |
其他
|
The characteristics and development of InGaN solar cell |
C. L. Tsai, Y. Z. Chiou, and M. C. Wu |
|
| 2009-06 |
期刊論文
|
Thermal stability for reflectance and specific contact resistance of Ni/Ag-based contacts on p-type GaN |
R. M. Lin, Y. L. Chou, W. C. Tseng, C. L. Tsai, J. C. Li, and M. C. Wu |
Electrochemical and Solid-State Letters
|
| 2009-06 |
研討會論文
|
InGaN light-emitting diodes (LED) with the strained AlGaN/InGaN multiple quantum barriers |
C. L. Tsai, G. S. Liu, J. Q. Lin, H. W. Tseng, and C. Y. Wang |
|
| 2009-06 |
研討會論文
|
The improved photoresponse of the substrate-free InGaN solar cells with a bottom reflector |
C. L. Tsai, G. S. Liu, C. Y. Wang, J. P. Huang, and J. Q. Lin |
|
| 2009-05 |
期刊論文
|
High-speed InGaAs P-I-N photodetector with planar buried heterostructure |
Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H. Huang, and W. Lin |
IEEE Trans. Electron Devices
|
| 2009-04 |
期刊論文
|
Fabrication and characterization of the substrate-free InGaN-based resonant-cavity light-emitting diodes for plastic optical fiber communications |
C. L. Tsai, J. Q. Lin, and J. P. Huang |
J. Vac. Sci. Technol. B
|
| 2009-01 |
期刊論文
|
SiOx-planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed (10 Gb/s) operation |
C. L. Tsai, J. Q. Lin, F. M. Lee, Y. L. Chou, and M. C. Wu |
J. Vac. Sci. Technol. B
|
| 2008-11 |
研討會論文
|
Fabrication of the improved performance of thin-film resonant-cavity light-emitting diodes by using laser lift-off and Ta2O5/SiO2 distributed Bragg reflector |
C. L. Tsai, J. P. Huang, and J. Q. Lin |
|
| 2008-08 |
技術報告
|
設計與研製具繞射光學元件之綠色發光二極體/微型共振腔發光二極體(I) |
蔡家龍 |
|
| 2008-03 |
期刊論文
|
An alternative method to fabricate the planar-type resonant-cavity light-emitting diodes by using silicon oxide for short-reach communications |
C. L. Tsai, Y. L. Chou, R. M. Lin, F. M. Lin, M. C. Wu, and S. C. Ko |
Materials Science in Semiconductor Processing
|
| 2008-02 |
期刊論文
|
High-reliable and high-speed 1.3 µm complex-coupled distributed feedback buried-heterostructure laser diodes with Fe-doped InGaAsP/InP hybrid grating layer grown by MOCVD |
F. M. Lee, C. L. Tsai, C. W. Hu, F. Y. Cheng, M. C. Wu, and C. C. Lin |
IEEE Trans. Electron Devices
|
| 2007-12 |
研討會論文
|
An alternative method to fabricate the RCLED by using silicon oxide for short-reach communications |
Y. L. Chou, P. C. Lin, C. L. Tsai, and M. C. Wu |
|
| 2007-02 |
期刊論文
|
1.3-μm GaInAsN vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation |
F. M. Lee, C. L. Tsai, C. W. Hu, K. F. Huang, M. C. Wu, and S. C. Ko |
IEEE Electron Device Lett.
|
| 2007-02 |
期刊論文
|
High performance 1.55 µm InGaAsP buried-heterostructure laser diodes fabricated by single-step MOCVD regrowth and self-aligned technique |
C. W. Hu, F. M. Lee, K. F. Huang, C. L. Tsai, and M. C. Wu |
J. Electrochemical Society
|
| 2006-12 |
研討會論文
|
High speed donut shape oxide-confined 850-nm VCSELs with TO package |
F. M. Lee, C. L. Tsai, F. Y. Cheng, and M. C. Wu |
|
| 2006-07 |
期刊論文
|
Uncooled 1.3 µm complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP/InP hybrid current-blocking grating |
C. W. Hu, F. M. Lee, K. F. Huang, M. C. Wu, C. L. Tsai, Y. H. Hung, and C. C. Lin |
IEEE Photon. Technol. Lett.
|
| 2006-05 |
研討會論文
|
Uncooled 1.3 μm complex-coupled DFB BH laser diodes with Fe-doped InGaAsP/InP hybrid current-blocking grating |
F. M. Lee, C. W. Hu, C. L. Tsai, M. C. Wu, C. C. Lin |
|
| 2006-02 |
期刊論文
|
Linear GRINSCH 1.55-μm InGaAsP/InP strained multiple quantum well laser diodes grown by substrate temperature control |
C. W. Hu, F. M. Lee, K. F. Huang, C. L. Tsai, M. C. Wu, Y. H. Hung, and W. J. Ho |
J. Electrochemical Society
|
| 2005-07 |
期刊論文
|
Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide |
C. L. Tsai, F. M. Lee, C. W. Hu, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho |
J. Vac. Sci. Technol. B
|
| 2005-05 |
期刊論文
|
High performance silicon oxide (SiOx) planarized GaInNAs vertical-cavity surface-emitting lasers |
C. L. Tsai, C. W. Hu, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, and W. J. Ho |
IEEE Trans. Electron Devices
|
| 2005-05 |
期刊論文
|
Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission |
C. L. Tsai, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho |
IEEE Electron Device Lett.
|
| 2005-03 |
研討會論文
|
Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for fiber optic applications |
C. L. Tsai, F. M. Lee, C. W. Hu, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho |
|
| 2004-12 |
研討會論文
|
Silicon dioxide planarized GaInNAs VCSEL devices |
S. C. Ko, C. L. Tsai, and H. L. Wang |
|
| 2004-10 |
期刊論文
|
Fabrication and characterization of 650-nm resonant-cavity light-emitting diodes |
C. L. Tsai, C. W. Hu, C. Y. Huang, F. M. Lee, M. C. Wu, H. L. Wang, S. C. Ko, W. J. Ho, J. Huang |
J. Vac. Sci. Technol. B
|
| 2004-04 |
期刊論文
|
1.3-µm compressive-strain GaInAsP/GaInAsP multi-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer |
M. Y. Wu, C. L. Tsai, M. C. Wu, C. L. Ho, and W. J. Ho |
Solid-State Electron.
|
| 2004-04 |
期刊論文
|
Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier |
M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, and W. J. Ho |
J. Vac. Sci. and Technol. B
|
| 2003-12 |
期刊論文
|
Comparison of 1.3-µm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes with/without GaInAsP and AlGaInAs graded-composition layers |
M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, and W. J. Ho |
Jpn. J. Appl. Phys.
|
| 2003-12 |
研討會論文
|
Enhancement of carrier injection of AlGaInAs/InP SC-MQW LDs using AlGaInAs graded-composition layer |
M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho |
|
| 2003-12 |
研討會論文
|
Tensile-strain GaInP/GaInAsP quantum-barrier study on 1.3-µm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes |
M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho |
|
主要學歷