Abnormal Degradation Behaviors under Negative Bias Stress in Flexible p-channel Low-temperature Polycrystalline Silicon Thin Film Transistors after Laser Lift-Off Process
Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si3N4/AlGaN/GaN-HEMT
J. H. Lin, F. M. Ciou, T. C. Chang*, Y. S. Lin, J. T. Hsu, F. Y. Jin, K. C. Chang, T. T. Kuo, K. H. Chen, Y. H. Hung, Y. Z. Zheng
IEEE Electron Device Letters
2022-07
期刊論文
Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure
Y. A. Chen, Y. Z. Zheng, T. C. Chang*, K. J. Zhou, P. J. Sun, Y. H. Hung, Y. H. Lee, T. M. Tsai, J. W. Chen, C. W. Kuo, C. H. Tsai, Ogier, S
IEEE Electron Device Letters
2022-06
期刊論文
Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
T. T. Kuo, Y. C. Chen, T. C. Chang*, M. C. Tai, Y. X. Wang, K. H. Chen, Y. S. Lin, F. M. Ciou, F. Y. Jin, K. C. Chang, W. C. Hung, Y. C. Chang, and C. H. Yeh
Applied Physics Letters
2022-06
期刊論文
Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology
Wei-Chun Hung, Yu-Fa Tu, Ting-Chang Chang, Mao-Chou Tai, Yung-Fang Tan, Kuan-Hsu Chen, Chien-Hung Yeh, Hong-Yi Tu, Hung-Ming Kuo
IEEE Electron Device Letters
2021-10
期刊論文
Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment
Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices
Chih-Yang Lin, Jia Chen, Po-Hsun Chen, Ting-Chang Chang, Yuting Wu, Jason K. Eshaghian, John Moon, Sangmin Yoo, Yu-Hsun Wang, Wen-Chung Chen, Zhi-Yang Wang, Hui-Chen Huang, Yi Li, Xiangshui Miao, Wei D. Lu, Simon M. Sze
Small
2020-08
期刊論文
Low temperature defect passivation technology for semiconductor electronic devices-supercritical fluid treatment process
Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
K. C. Chang, J. C. Liao, T. C. CHang, C. H. Yeh, C. Y. Lin, F. Y. Jin, Y. S. Lin, F. M. Ciou, W. C. Hung, Y. H. Lin, C.H. Lien, O. Cheng, C. T. Huang, Y. H. Ye
IEEE Electron Device Letters
2018-08
期刊論文
Analyzing Electric Field Effect by Applying an
Ultra-Short Time Pulse Condition in
Hafnium Oxide-Based RRAM
C. H. Wu, S. K. Lin, C. H. Pan, P. H. Chen, W. Y. Lin, T. C. Chang, T. M. Tsai, Y. L. Xu, C. C. Shih, Y. S. Lin, W. C. Chen, M. H. Wang, S. D. Zhang, S. M. Sze
IEEE Electron Device Letters
2018-02
期刊論文
Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors
Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic
Hsin-Lu Chen, Po-Hsun Chen, Ting-Chang Chang, Tai-Fa Young, Min-Chuan Wang, Chi-Fong Ai, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Yu-Ting Su, Chih-Cheng Yang, and Chun-Chu Lin
IEEE Electron Device Letters
2017-08
期刊論文
Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide
B. W. Chen, H. L. Chen, T. C. Chang, Y. J. Hung, S. P. Huang, Y. Z. Zheng, Y. H. Lin, P. Y. Liao, J. H. Chen, J. W. Yang, H. C. CHiang, W. C. Su, Y. C. Tsao, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, K. C. Chang, T. F. Young
IEEE Transactions on Electron Devices
2017-07
期刊論文
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure
Yi-Ting Tseng, Po-Hsun Chen, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Hui-Chun Huang, Cheng-Chi Yang, Chih-Yang Lin, Cheng-Hsien Wu, Hao-Xuan Zhang, Shengdong Zang, and Simon M. Sze
Advanced Electronic Materials
2017-02
期刊論文
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors
Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
Po-Hsun Chen, Ting-Chang Chang*, Kuan-Chang Chang, Tsung-Ming Tsai*, Chih-Hung Pan, Min-Chen Chen, Yu-Ting Su, Chih-Yang Lin, Yi-Ting Tseng, Hui-Chun Huang, Huaqiang Wu, Ning Deng, He Qian, and Simon M. Sze
ACS Applied Material & Interface
2016-09
期刊論文
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, W. Y. Lin, M. C. Chen, S. M. Sze
Applied Physics Letters
2016-06
期刊論文
Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications
Huey-Ru Chen, Ying-Chung Chen*, Ting-Chang Chang*, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Cheng Shih, Nai-Chuan Chuang and Kao-Yuan Wang
Nanoscale Research Letters
2016-06
期刊論文
Resistance Random Access Memory
Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu and Simon M. Sze
Materials Today
2016-06
期刊論文
Resistance random access memory
Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Simon M. Szi
Materials Today
2016-05
期刊論文
Improving Performance by Doping Gadolinium into the Indium-Tin-Oxide Electrode in HfO2-based Resistive Random Access Memory
P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng, S. M. Sze
IEEE Electron Device Letters
2016-04
期刊論文
Trap state passivation improved hot-carrier instability by Zirconium-doping in Hafnium oxide in a nanoscale n-MOSFETs with high-k/metal gate
H. W. Liu, T. C. Chang*, J. Y. Tsai, C. E. Chen, K. J. Liu, Y. H. Lu, C. Y. Lin, T. Y. Tseng, O. Cheng, C. T. Huang, Y. H. Ye
Applied Physics Letters
2016-03
期刊論文
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs with HfO2-Based Gate Dielectrics
C. E. Chen, T. C. Chang*, B. You, J. Y. Tsai, W. H. Lo, S. H. Ho, K. J. Liu, Y. H. Lu, X. W. Liu, Y. J. Hung, T. Y. Tseng, O. Cheng, C. T. Huang, C. S. Lu
IEEE Electron Device Letters
2016-03
期刊論文
Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, T. J. Chu, M. C. Chen, H. C. Huang, J. C. Zheng, S. M. Sze
IEEE Electron Device Letters
2016-03
期刊論文
Resistive Switching Mechanism of Oxygen-rich Indium Tin Oxide Resistance Random Access Memory
T. M. Tsai, K. C. Chang, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, J. C. Lou, S. M. Sze
IEEE Electron Device Letters
2016-02
期刊論文
Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide
Y. F. Chang, B. Fowler, Y. C. Chen, F. Zhou, C. H. Pan, T. C. Chang, J. C. Lee
Scientific Reports
2016-02
期刊論文
Gate insulator morphology-dependent reliability in organic thin film transistors
H. M. Chen, T. C. Chang*, Y. H. Tai, H. C. Chiang, K. H. Liu, M. C. Chen, C. C. Huang, C. K. Lee
IEEE Electron Device Letters
2015-12
期刊論文
Resistance Random Access Memory
T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, S. M. Sze
Materials Today
2015-11
期刊論文
Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory
14. C. C. Kuo, I. C. Chen, C. C. Shih, K. C. Chang, C. H. Huang, P. H. Chen, T. C. Chang*, T. M. Tsai, J. S. Chang, J. C. Huang*
IEEE Electron Device Letters
2015-11
期刊論文
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment
J. Chen, K. C. Chang*, T.C. Chang*, T. M. Tsai, C. H. Pan, R. Zhang, J. C. Lou, T. J. Chu, C. H. Wu, M. C. Chen, Y. C. Hung, Y. E. Syu, J. C. Zheng, S. M. Sze
IEEE Electron Device Letters
2015-09
期刊論文
Investigation of Hydration Reaction induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors
J. C. Jhu, T.C. Chang*, K. C. Chang, C. Y. Yang, W. C. Chou, C. H. Chou, W. C. Chung
IEEE Electron Device Letters
2015-08
期刊論文
An Electronic Synapse Device Based on Solid Electrolyte Resistance Random Access Memory
W. Zhang, K. C. Chang, T.C. Chang*, T. M. Tsai, H. L. Chen, Y. T. Su, Y. Hu, M. C. Chen, H. C. Huang, W. C. Su, J. C. Zheng, and S. M. Sze
IEEE Electron Device Letters
2015-08
期刊論文
Investigation of defect-induced abnormal body current in fin field-effect-transistors
K. J. Liu, T.C. Chang*, C. E. Chen, R. Y. Yang, J. Y. Tsai, Y. H. Lu, X. W. Liu, O. Cheng, C. T. Huang
Appl. Phys. Lett.
2015-06
期刊論文
Effects of Varied Negative Stop Voltages on Current Self-compliance in Indium Tin Oxide Resistance Random Access Memory
C. Y. Lin, K. C. Chang, T.C. Chang*, T. M. Tsai, C. H. Pan, R. Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, and S. M. Sze
IEEE Electron Device Letters
2015-06
期刊論文
Improvement of resistive switching characteristic in silicon oxide based RRAM through hydride-oxidation on Indium Tin Oxide electrode by supercritical CO2 fluid
K. C. Chang, T. M. Tsai, T.C. Chang*, Z. Rui, K. Huang Chen, J. H. Chen, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng, and S. M. Sze
IEEE Electron Device Letters
2015-06
期刊論文
Mechanism of triple ions effect in GeSO resistance random access memory
W. Zhang, Y. Hu, T.C. Chang*, T. M. Tsai, K. C. Chang, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin, and S. M. Sze
IEEE Electron Device Letters
2015-05
期刊論文
Complementary Resistive Switching Behavior Induced by Varying Forming Current Compliance in Resistance Random Access Memory
Y. T. Tseng, T. M. Tsai, T.C. Chang*, C. C. Shih, K. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng, S. M. Sze
Applied Physics Letters
2015-05
期刊論文
Impact of Repeated Uniaxial Mechanical Strain on P-type Flexible Polycrystalline Thin Film Transistors
B. W. Chen, T.C. Chang*, Y. J. Hung, T. Y. Hsieh, M. Y. Tsai, P. Y. Liao, B. Y. Chen, Y. H. Tu, Y. Y. Lin, W. W. Tsai, J. Y. Yan
Applied Physics Letters
2015-03
期刊論文
The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid
H. R. Chen, Y. C. Chen*, T.C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, Y. T. Tseng, C. Y. Lin, H. C. Lin
IEEE Electron Device Letters
2014-12
期刊論文
Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation
X. Huang, K. C. Chang, T. C. Chang*, T. M. Tsai, C. C. Shih, R. Zhang, S. Y. Huang, K. H. Chen, J. H. Chen, H. J. Wang, W. J. Chen, F. Y. Zhang, C. Chen, Simon M. Sze
IEEE Electron Device Letters
2014-12
期刊論文
Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
T.J. Chu, T.M. Tsai, T.C. Chang*, K.C. Chang, C.H. Pan, K.H. Chen, J.H. Chen, H.L. Chen, H.C. Huang, C.C. Shih, Y.E. Syu, J.C. Zheng and Simon M. Sze
Applied Physics Letters
2014-12
研討會論文
High Performance, Excellent Reliability Multifunctional Graphene Oxide Doped Memristor Achieved by Self-protective Compliance Current Structure
K. C. Chang, R. Zhang, T. C. Chang*, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu, S. M. Sze
2014-10
期刊論文
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
K.H. Liu, T.C. Chang*, W.C. Chou, H.M. Chen, M.Y. Tsai, M.S. Wu, Y.S. Hung, P.H. Hung, T.Y.Hsieh, Y.H. Tai, A.K. Chu, and B.L. Yeh
Journal of Applied Physics
2014-10
期刊論文
Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor
Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Z., T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng, S. M. Sze
IEEE Electron Device Letters
2014-09
期刊論文
Influence of oxygen concentration on self-compliance RRAM in indium oxide film
J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze, M. J. Tsai, D. H. Bao
IEEE Electron Device Letters
2014-09
期刊論文
Ultra-high Sensitivity Self-amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior
H. M. Chen, T. C. Chang*, Y. H. Tai, Y. C. Chen, M. C. Yang, C. H. Chou, J. F. Chang, S. Z. Deng
IEEE Transactions on Electron Devices
2014-08
期刊論文
Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors
T.Y. Hsieh, T.C. Chang*, T.C. Chen and M.Y. Tsai
ECS Journal of Solid State Science and Technology
2014-06
期刊論文
Characterization of Oxygen Accumulation in Indium-tin-oxide for Resistance Random Access Memory
R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu, S. M. Sze
IEEE Electron Device Letters
2014-06
期刊論文
On the Origin of Anomalous Off-Current under Hot Carrier Stress in p-channel DDDMOS Transistors with STI Structure
C. E. Chen, T. C. Chang*, H. M. Chen, B. You, K. H. Yang, S. H. Ho, J. Y. Tsai, K. J. Liu, Y. H. Lu, Y. J. Hung, Y. H. Tai, Tseung-Yuen Tseng
IEEE Electron Device Letters
2014-06
期刊論文
Resistive Switching Modification by Ultra-violet Illumination in Transparent Electrode Resistive Random Access Memory
C. C. Shih, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao, Simon M. Sze
IEEE Electron Device Letters
2014-06
期刊論文
Temperature dependent instability of bias stress in InGaZnO thin film transistors
G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian, Y. C. Hung
IEEE Transactions on Electron Devices
2014-06
期刊論文
Ultra-Violet Light Enhanced Super Critical Fluid Treatment in In-Ga-Zn-O Thin Film Transistor
H. L. Chen, T. C. Chang*, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang, J. H. Chen
Applied Physics Letters
2014-05
期刊論文
Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
K. C. Chang, T. M. Tsai, T. C. Chang*, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao, S. M. Sze
IEEE Electron Device Letters
2014-05
期刊論文
Surface Scattering Mechanisms of Tantalum Nitride Thin-Film Resistor
H. R. Chen, Y. C. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang, K. Y. Wang
Nanoscale Research Letters
2014-04
期刊論文
Dual operation characteristics of resistance random access memory in Indium-Gallium-Zinc-Oxide thin film transistors
J. B. Yang, T. C. Chang*, J. J. Huang, Y. C. Chen, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze
Applied Physics Letters
2014-04
期刊論文
Investigation of Channel Width-Dependent Threshold Voltage Variation in a-InGaZnO Thin-Film Transistors
K. H. Liu, T. C. Chang*, M. S. Wu, Y. S. Hung, P. H. Hung, T. Y. Hsieh, W. C. Chou, A. K. Chu, S. M. Sze, B. L. Yeh
Applied Physics Letters
2014-03
期刊論文
Investigation of On-Current Degradation Behavior induced by Surface Hydrolysis Effect under Negative Gate Bias Stress in amorphous InGaZnO Thin-Film Transistors
K. H. Liu, T. C. Chang*, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh, W. C. Chou
Applied Physics Letters
2014-03
期刊論文
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
S. H. Ho, T. C. Chang*, Y. H. Lu, C. E. Chen, J. Y. Tsai, K. J. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, C. S. Lu
Applied Physics Letters
2014-02
期刊論文
Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
C. Ye, C. Zhan, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang*, T. F. Deng, H. Wang*
Applied Physics Express
2014-02
期刊論文
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
T. J. Chu, T. M. Tsai, T. C. Chang*, K. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, T. Fa Young, J.W. Huang, J.C. Lou, M. C. Chen, S.Y. Huang, H. L. Chen, Y.E. Syu, D. H. Bao, S. M. Sze
ELECTRON DEVICE LETTERS
2014-01
期刊論文
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
Y. J. Chen, H. L. Chen, T. F.Young, T. C. Chang*, T. M. Tsai, K. C. Chang,R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D. H. Bao ,S. M Sze
Nanoscale Research Letters
2014-01
期刊論文
Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment
K. C. Chang, T. M. Tsai, T. C. Chang*, R. Zhang, J. H. Chen, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, Simon M. Sze
Journal of Supercritical Fluids
2013-12
期刊論文
Integrated One Diode−One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
Li Ji, Y. F. Chang, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang*, S. M. Sze, E. T. Yu, J. C. Lee
Nano Lett
2013-12
期刊論文
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
R. Zhang, T. M. Tsai, T. C. Chang*, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu, S. M. Sze
JOURNAL OF APPLIED PHYSICS
2013-12
期刊論文
Space electric field concentrated effect for Zr:SiO2
RRAM devices using porous SiO2 buffer layer
K. C. Chang, J. W. Huang, T. C. Chang*, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao, S. M Sze
Nanoscale Research Letters
2013-11
期刊論文
High Performance of Graphene Oxide Doped Silicon Oxide Based Resistance Random Access Memory
R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, C. C. Shih, Y. L. Yang, Y. C. Pan, T. J. Chu, S. Y. Huang, C. H. Pan, Y. T. Su, Y. E. Syu, S. M. Sze
Nanoscale Research Letters
2013-11
期刊論文
High-k shallow traps observed by charge pumping with varying discharging times
S. H. Ho, T. C. Chang*, Y. H. Lu, B. W. Wang, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, K. J. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, T. F. Chen, X. X. Cao
Journal of Applied Physics
2013-11
期刊論文
Reduction of Defect Formation in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by N2O Plasma Treatment
J. C. Jhu, T. C. Chang*, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, J. Y. Yan
Journal of Applied Physics
2013-10
期刊論文
Asymmetric structure induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor
M. Y. Tsai, T. C. Chang*, A. K. Chu, T. C. Chen, T. Y. Hsieh, K. Y. Lin, W. W. Tsai, W. J. Chiang, J. Y. Yan
Applied Physics Letters
2013-10
期刊論文
Characteristics of Hafnium Oxide Resistance Random Access Memory with Different Setting Compliance Current
Y. T. Su, K. C. Chang, T. C. Chang*, T. M Tsai, R. Zhang, J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, J. H. Pan, Y. E. Syu, S. M. Sze
Applied Physics Letters
2013-09
期刊論文
Abnormal Threshold Voltage Shift under Hot Carrier Stress in Ti1-xNx/HfO2 p-channel MOSFETs
J. Y. Tsai, T. C. Chang*, W. H. Lo, S. H. Ho, C. E. Chen, H. M. Chen, T. Y. Tseng, Y. H. Tai, O. Cheng , C. T. Huang
Journal of Applied Physics
2013-09
期刊論文
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang*, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang, J. W. Huang
The Journal of Supercritical Fluids
2013-09
期刊論文
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-channel MOSFETs
C. E. Chen, T. C. Chang*, B. You, W. H. Lo, S. H. Ho, C. H. Dai, J. Y. Tsai, H. M. Chen, G. R. Liu, Y. H. Tai, T. Y. Tseng
ECS Solid State Letters
2013-09
期刊論文
Low power consumption resistance random access memory with Pt/InOx/TiN structure
J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze, M. J. Tsai
Applied Physics Letters
2013-08
期刊論文
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
Chang KC, Tsai TM, Zhang R, Chang TC, Chen KH, Chen JH, Young TF, Lou JC, Chu TJ, Shih CC, Pan JH, Su YT, Syu YE, Tung CW, Chen MC, Wu JJ, Hu Y, Sze SM
APPLIED PHYSICS LETTERS
2013-07
期刊論文
Abnormal Sub-threshold Swing Degradation under Dynamic Hot Carrier Stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
J. Y. Tsai, T. C. Chang*, W. H. Lo, C. E. Chen, S. H. Ho, H. M. Chen, Y. H. Tai, O. Cheng, and C. T. Huang
Applied Physics Letters
2013-07
期刊論文
Analysis of Electrical Characteristics and Reliability Change of Zinc-Tin-Oxide Thin-Film Transistors by Photo-Thermal Treatment
Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, T. Y. Hsieh
ECS Solid State Letters
2013-07
期刊論文
Anomalous gate current hump after dynamic negative bias stress and negative-bias temperature-instability in p-MOSFETs with HfxZr1-xO2 and HfO2/metal gate stacks
S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang , D. Chen , S. M. Sze
ECS Journal of Solid State Science and Technology
2013-07
期刊論文
Endurance Improvement Technology with Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
Y. E. Syu, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan, S. M. Sze
IEEE Electron Device Letters
2013-07
期刊論文
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
J. J. Huang, T. C. Chang*, C. C. Yu, H. C. Huang, Y. T. Chen, H. C. Tseng, J. B. Yang, S. M. Sze, D. S. Gan, A. K. Chu, J. Y. Lin, M. J. Tsai
Applied Physics Letters
2013-07
期刊論文
High temperature-induced abnormal suppression of sub-threshold swing and on-current degradation under hot-carrier stress in a-InGaZnO thin film transistors
M. Y. Tsai, T. C. Chang*, A. K. Chu, T. Y. Hsieh, T. C. Chen, K. Y. Lin, W. W. Tsai, W. J. Chiang, J. Y. Yan
Applied Physics Letters
2013-07
期刊論文
Impact of electroforming current on self-compliance resistive switching in an ITO/Gd:SiOx/TiN structure
H. C. Tseng, T. C. Chang*, Y. C. Wu, S. W. Wu, J. J. Huang, Y. T. Chen, J. B. Yang, T. P. Lin, S. M. Sze, M. J. Tsai, Y. L. Wang, A. K. Chu
IEEE Electron Device Letters
2013-06
期刊論文
A solution-based β-diketonate silver ink for direct printing of highly conductive features on a flexible substrate
C. N. Chen, T. Y. Dong,* T. C. Chang, M. C. Chen, H. L. Tsai, and W. S. Hwang
Journal of Materials Chemistry C
2013-06
期刊論文
Insertion of a Si layer to reduce operation current for resistance random access memory applications
Y. T. Chen, T. C. Chang*, H. K. Peng, H. C. Tseng, J. J. Huang, J. B. Yang, A. K. Chu, T. F. Young, S. M. Sze
Applied Physics Letters
2013-06
期刊論文
Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory
T. M. Tsai*, K. C. Chang, R. Zhang, T. C. Chang*, J. C. Lou, J. H. Chen, T. F. Young, B. H. Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu, S. M. Sze
Applied Physics Letters
2013-05
期刊論文
Characterization and Investigation of Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, Y. T. Chen, P. Y. Liao, T. C. Chen, M. Y. Tsai, Y. C. Chen, B. W. Chen, A. K. Chu, C. H. Chou, W. C. Chung, J. F. Chang
IEEE Trans. Electron Devices
2013-05
期刊論文
Hopping Effect of Hydrogen-doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
K. C. Chang, C. H. Pan, T. C. Chang*, T. M. Tsai, T. F. Young, J. H. Chen, C. C. Shih, T. J. Chu, J. Y. Chen, Y. T. Su, J. P. Jiang, K. H. Chen, H. C. Huang, Y. E. Syu, D. S. Gan, S. M. Sze
IEEE Electron Device Letters
2013-05
期刊論文
Hot-Carrier Effect on amorphous In-Ga-Zn-O Thin Film Transistor with a Via-Contact Structure
T. Y. Hsieh, T. C. Chang*, Y. T. Chen, P. Y. Liao, T. C. Chen, M. Y. Tsai, Y. C. Chen, B. W. Chen, A. K. Chu, C. H. Chou, W. C. Chung, J. F. Chang
IEEE Electron Device Letters
2013-05
期刊論文
Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Single Damascene Capacitor
Y. L. Yang, T. F. Young*, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, K. C. Chang, H. L. Chen,
Applied Physics Letters
2013-05
期刊論文
Origin of Hopping Conduction in Graphene-Oxide Doped Silicon Oxide Resistance Random Access Memory Devices
K. C. Chang, R. Zhang, T. C. Chang*, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai, S. M. Sze
IEEE Electron Device Letters
2013-05
期刊論文
The Effect of High/Low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory
J. W. Huang, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Y. Zhang, Y. E. Syu, S. M. Sze
Applied Physics Letters
2013-04
期刊論文
Atomic-Level Quantized Reaction of HfOx Memristor
Y. E. Syu, T. C. Chang*, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu, S. M. Sze
Applied Physics Letters
2013-04
期刊論文
Charge Quantity Influence on Resistance Switching Characteristic during Forming Process
T. J. Chu, T. C. Chang*, T. M. Tsai, K. C. Chang, Y. E. Syu, G. W. Chang, Y. F. Chang, M. C. Chen, J. H. Lou, J. H. Pan, J. Y. Chen, Y. H. Tai, C. Ye, H. Wang, and S. M. Sze
IEEE Electron Device Letters
2013-04
期刊論文
Hopping Conduction Distance Dependent Activation Energy Characteristics of Zn:SiO2 Resistance Random Access Memory Devices
K. H. Chen*, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, C. W. Tung, Y. E. Syu, S. M. Sze
Applied Physics Letters
2013-04
期刊論文
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
K. C. Chang, T. M. Tsai, T. C. Chang*, H. H. Wu, K. H. Chen, J. H. Chen, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, G. W. Chang, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, T. F. Young, S. M. Sze
IEEE Electron Device Letters
2013-04
期刊論文
Transferable and Flexible Label Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology
Y. C. Lai, F. C. Hsu, J. Y. Chen, J. H. He, T. C. Chang, Y. P. Hsieh, T. Y. Lin, Y. J. Yang, and Y. F. Chen*
Advanced Materials
2013-03
期刊論文
Characteristics and Mechanisms of Silicon Oxide Based Resistance Random Access Memory
K. C. Chang, T. M. Tsai, T. C. Chang*, H. H. Wu, J. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, J. Y. Chen, C. W. Tung, H. C. Huang, Y. H. Tai, D. S. Gan, S. M. Sze
IEEE Electron Device Letters
2013-02
期刊論文
Dependence of light-accelerated instability on bias and environment in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, T. Y. Hsieh, Y. H. Chen, W. W. Tsai, W. J. Chiang, J. Y. Yan
ECS Journal of Solid State Science and Technology
2013-02
期刊論文
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
J. Y. Tsai, T. C. Chang*, W. H. Lo, C. E. Chen, S. H. Ho, H. M. Chen, Y. H. Tai, O. Cheng, C. T. Huang
Applied Physics Letters
2013-02
期刊論文
Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-based Structure
Y. T. Chen, T. C. Chang*, P. C. Yang, J. J. Huang, H. C. Tseng, H. C. Huang, J. B. Yang, A. K. Chu, D. S. Gan, M. J. Tsai, and S. M. Sze
IEEE Electron Device Letters
2013-02
期刊論文
Investigating the bipolar resistive switching characteristics between filament type and interface type of BON-based resistive switching memory
H. C. Tseng, T. C. Chang*, K. H. Cheng, J. J. Huang, Y. T. Chen, F. Y. Jian, S. M. Sze, M. J. Tsai, A. K. Chu, and Y. L. Wang
Thin Solid Films
2013-02
期刊論文
Resistive switching characteristics of gallium oxide for nonvolatile memory application
J. B. Yang, T. C. Chang*, J. J. Huang, S. C. Chen, P. C. Yang, Y. T. Chen, H. C. Tseng, S. M. Sze, A. K. Chu, M. J. Tsai
Thin Solid Films
2013-01
期刊論文
Impact of Strain on Gate-Induced Floating Body Effect for Partially Depleted Silicon-On-Insulator p-type Metal-Oxide-Semiconductor- Field-Effect-Transistors
W. H. Lo, T. C. Chang*, C. H. Dai, W. L. Chung, C. E. Chen, S. H. Ho, J. Y. Tsai, H. M. Chen, G. R. Liu, O. Cheng, and C. T. Huang
Thin Solid Films
2013-01
期刊論文
Influence of Molybdenum Doping on the Switching Characteristic in Silicon oxide based Resistive Switching Memory
Y. T. Chen, T. C. Chang*, J. J. Huang, H. C. Tseng, P. C. Yang, A. K. Chu, J. B. Yang, H. C. Huang, D. S. Gan, M. J. Tsai, and S. M. Sze
Applied Physics Letters
2013-01
期刊論文
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
J. J. Huang, T. C. Chang*, P. C. Yang, Y. T. Chen, H. C. Tseng, J. B. Yang, S. M. Sze, A. K. Chu, and M. J. Tsai
Thin Solid Films
2013-01
期刊論文
Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, and Y. T. Chen
Thin Solid Films
2013-01
期刊論文
Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures
M. Y. Tsai, T. C. Chang*, A. K. Chu, T. C. Chen, T. Y. Hsieh, Y. T. Chen, W. W. Tsai, W. J. Chiang, and J. Y. Yan
Thin Solid Films
2013-01
期刊論文
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, G. R. Liu, H. M. Chen, Y. S. Lu, B. W. Wang, T. Y. Tseng, O. Cheng, C. T. Huang, and S. M. Sze
Applied Physics Letters
2013-01
期刊論文
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
S. H. Ho, T. C. Chang*, B. W. Wang, Y. S. Lu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, and X. X. Cao
Applied Physics Letters
2013-01
期刊論文
Low operation voltage macromolecular composite memory assisted by graphene nanoflakes
Y. C. Lai, D. Y. Wang, I. S. Huang, Y. T. Chen, Y. H. Hsu, T. Y. Lin, H. F. Meng, T. C. Chang, Y. J. Yang, C. C. Chen, F. C. Hsuh, and Y. F. Chen*
Journal of Materials Chemistry C
2013-01
期刊論文
Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO /TiN device
J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, P. C. Yang, H. C. Tseng, A. K. Chu ,S. M. Sze , and M. J. Tsai
Thin Solid Films
2013-01
期刊論文
Self-Heating Effect Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. T. Chen, M. Y. Tsai, A. K. Chu, Y. C. Chung, H. C. Ting, and C. Y. Chen
IEEE Electron Device Letters
2013-01
期刊論文
The resistive switching characteristics in TaON films for nonvolatile memory applications
M. C. Chen, T. C. Chang*, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang,S. M. Sze, and M. J. Tsai
Thin Solid Films
2013-
期刊論文
Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment
K. C. Chang, T. M. Tsai, T. C. Chang*, R. Zhang, J. H. Chen, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, Simon M. Sze
The Journal of Supercritical Fluids
2013-
期刊論文
Mechanism of Power Consumption Inhibitive Multi-layer Zn:SiO2/SiO2 Structure Resistance Random Access Memory
R. Zhang, T. M. Tsai*, T. C. Chang*, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu, S. M. Sze
Journal of Applied Physics
2013-
期刊論文
Space Electric Field Concentrated Effect for Zr:SiO2 RRAM Devices Using Porous SiO2 Buffer Layer
K. C. Chang, T. M. Tsai, T. C. Chang*, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, S. M. Sze
Nanoscale Research Letters
2012-12
期刊論文
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
S. H. Ho, T. C. Chang*, Y. S. Lu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, C. W. Wu, H. P. Luo, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, and S. M. Sze
Applied Physics Letters
2012-12
期刊論文
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications
T. M. Tsai*, K. C. Chang, T. C. Chang*, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, and S. M. Sze
IEEE Electron Device Letters
2012-12
期刊論文
Origin of Hopping Conduction in Sn-doped Silicon Oxide RRAM with Supercritical CO2 fluid treatment
T. M. Tsai*, K. C. Chang, T. C. Chang*, G. W. Chang, Y. E. Syu, Y. T. Su, G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, and S. M. Sze
IEEE Electron Device Letters
2012-12
期刊論文
Photoelectric Heat Effect induce Instability on the Negative Bias Temperature Illumination Stress for InGaZnO Thin Film Transistors
S. Y. Huang, T. C. Chang*, M. C. Yang, L. W. Lin, M. H. Wu, K. H. Yang, M. C. Chen, Y. J. Chiu, and B. L. Yeh
Applied Physics Letters
2012-12
期刊論文
Systematic Investigations on Self-Heating Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. T. Chen, M. Y. Tsai, Y. C. Chung, H. C. Ting, and C. Y. Chen
IEEE Transactions on Electron Devices
2012-11
期刊論文
Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. C. Chen, Y. T. Chen, P. Y. Liao, A. K. Chu, W. W. Tsai, W. J. Chiang, and J. Y. Yan
Applied Physics Letters
2012-10
期刊論文
Influence of oxygen concentration on resistance switching characteristics of gallium oxide
J. J. Huang, T. C. Chang*, J. B. Yang, S. C. Chen, P. C. Yang, Y. T. Chen, H. C. Tseng, S. M. Sze, A. K. Chu, and M. J. Tsai
IEEE Electron Device Letters
2012-09
期刊論文
Abnormal interface state generation under positive bias Stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
W. H. Lo, T. C. Chang*, J. Y. Tsai, C. H. Dai, C. E. Chen, S. H. Ho, H. M. Chen, O. Cheng, and C. T. Huang
Applied Physics Letters
2012-09
期刊論文
Dehydroxyl Effect of Sn-doped Silicon Oxide Resistance Random Access Memory with Supercritical CO2 Fluid Treatment
T. M. Tsai, K. C. Chang, T. C. Chang*, Y. E. Syu, K. H. Liao, B. H. Tseng, S. M. Sze
Applied Physics Letters
2012-07
期刊論文
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. P. Luo, T. Y. Tseng, O. Cheng, C. T. Huang, S. M. Sze
Applied Physics Letters
2012-07
期刊論文
Investigating the Drain-Bias Induced Degradation Behavior under Light Illumination for InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, F. Y. Jian, Y. C. Chung, H. C. Ting, and C. Y. Chen
IEEE Electron Device Letters
2012-07
期刊論文
Self-heating enhanced charge trapping effect for InGaZnO Thin Film Transistor
T. C. Chen, T. C. Chang*, T. Y. Hsieh, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, C. Y. Chen
Applied Physics Letters
2012-06
期刊論文
High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor
Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, C. P. Wu, S. C. Chen, J. Lu, Y. H. Chen, and Y. H. Tai
Applied Physics Letters
2012-06
期刊論文
Origin of Self-Heating Effect Induced Asymmetrical Degradation Behavior in InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, and C. Y. Chen
Applied Physics Letters
2012-05
期刊論文
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, Y. C. Hung
Applied Physics Letters
2012-04
期刊論文
Charge Trapping induced Drain-Induced-Barrier-Lowering in HfO2/TiN p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistors under Hot Carrier StressSemiconductor-Field-Effect-Transistors under Hot Carrier Stress
W. H. Lo, T. C. Chang*, J. Y. Tsai, C. H. Dai, C. E. Chen, S. H. Ho, H. M. Chen, O. Cheng, and C. T. Huang
Applied Physics Letters
2012-04
期刊論文
N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
Chang GW, Chang TC*, Jhu JC, Tsai TM, Syu YE, Chang KC, Jian FY, Hung YC, Tai YH
Surface & Coatings Technology
2012-03
期刊論文
Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
Chen YC, Chang TC*, Li HW, Chung WF, Chen SC, Wu CP, Chen YH, Tai YH, Tseng TY, Yeh FS
Surface & Coatings Technology
2012-02
期刊論文
Analyzing the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress
Abnormal subthreshold leakage current at high temperature in InGaZnO thin film transistors
G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, and Y. C. Hung
IEEE Electron Device Letters
2012-01
期刊論文
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
Y. E. Syu, T. C. Chang*, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang, and S. M. Sze
IEEE Electron Device Letters
2012-01
期刊論文
Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as indicated from NBTI degradation
W. H. Lo, T. C. Chang*, C. H. Dai, W. L. Chung, C. E. Chen, S. H. Ho, O. Cheng, and C. T. Huang
IEEE Electron Device Letters
2012-01
期刊論文
Silicon introduced Effect on Resistive Switching Characteristics of WOX Thin Films
Y. E. Syu, T. C. Chang*, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang, and S. M. Sze
Applied Physics Letters
2012-
期刊論文
Analysis the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress
T. C. Chen, T. C. Chang*, T. Y. Hsieh, M. Y. Tsai, C. T. Tsai, S. C. Chen, C. S. Lin, and F. Y. Jian
Surface & Coatings Technology
2012-
期刊論文
Analyzing the current crowding effect induced by oxygen absorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements
S. Y. Huang, T. C. Chang*, M. C. Chen, F. Y. Jian, S. C. Chen, T. C. Chen, J. L. Jheng, M. J. Lou, and F. S. Yeh(Huang)
Solid State Electronics
2012-
期刊論文
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. H. Ho, T. Y. Hsieh, W. H. Lo, C. E. Chen, J. M. Shih, W. L. Chung, B. S. Dai, H. M. Chen, G. Xia, O. Cheng, and C. T. Huang
Journal of The Electrochemical Society
2012-
期刊論文
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
S. Y. Huang, T. C. Chang*, M. C. Chen, T. C. Chen, F. Y. Jian, Y. C. Chen, H. C. Huang, and D. S. Gan
Surface & Coatings Technology
2012-
期刊論文
Improvement of n+-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal
M. C. Wang, T. C. Chang*, S. W. Tsao, Y. Z. Chen, T. C. Hsu, D. J. Jan, C. F. Ai, and J. R. Chen
Solid State Electronics
2012-
期刊論文
Investigating Degradation Behaviors Induced by DC and AC Bias-Stress under Light Illumination in InGaZnO Thin-Film Transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, and C. Y. Chen
Journal of Solid State Science and Technology
2012-
期刊論文
Investigation of gate-bias stress and hot-carrier stress induced instability of InGaZnO thin-film transistors under different environments
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, F. Y. Jian, and C. S. Lin
Surface & Coatings Technology
2012-
期刊論文
Oxygen-Adsorption-Induced Anomalous Capacitance Degradation on Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress
W. F. Chung, T. C. Chang*, C. S. Lin, K. J. Tu, H. W. Li, T. Y. Tseng, Y. C. Chen, and Y. H. Tai
Journal of The Electrochemical Society
2012-
期刊論文
Study of electric faucet structure by embedding Co nanocrystals in a FeOx-based memristor
Y. F. Chang, Y. T. Tsai, Y. E. Syu, and T. C. Chang*
Journal of Solid State Science and Technology
2012-
期刊論文
Study of resistive switching characteristics on a temperature-sensitive FeOx-transition layer in a TiN/SiO2/FeOx/Fe structure
Y. F. Chang, Y. T. Tsai, G. W. Chang, Y. E. Syu, Y. H. Tai, and T. C. Chang*
Journal of Solid State Science and Technology
2012-
期刊論文
The Asymmetrical Degradation Behavior on Drain Bias Stress under Illumination for InGaZnO Thin Film Transistors
S. Y. Huang, T. C. Chang*, L. W. Lin, M. C. Yang, M. C. Chen, J. C. Jhu, and F. Y. Jian
Applied Physics Letters
2012-
期刊論文
The Effect of Silicon Oxide Based RRAM with Tin Doping
K. C. Chang, T. M. Tsai, T. C. Chang*, Y. E. Syu, S. L. Chuang, C. H. Li, D. S. Gan, S. M. Sze
Electrochemical and Solid-State Letters
2012-
期刊論文
The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure
Y. C. Chen, T. C. Chang*, H. W. Li, T. Y. Hsieh, T. C. Chen, C. P. Wu, C. H. Chou, W. C. Chung, J. F. Chang, and Y. H. Tai
Applied Physics Letters
2012-
期刊論文
Thermal Impact on the activation of resistive switch in silicon oxide based RRAM
Y. T. Chen, T. C. Chang*, J. J. Huang, H. C. Tseng, P. C. Yang, A. K. Chu, J. B. Yang, M. J. Tsai, Y. L. Wang, S. M. Sze
ECS Solid State Letters
2012-
期刊論文
Thermal effect on the gate-drain bias stress for amorphous InGaZnO thin film transistors
Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, T. C. Chen, and F. Y. Jian
Electrochemical and Solid-State Letters
2012-
期刊論文
Using nanoparticle as direct- injection printing ink to fabricate conductive silver features on the transparent flexible PET substrate at room-temperature
C. N. Chen, C. P. Chen, T. Y. Dong*, T. C. Chang, M. C. Chen, H. T. Chen, I. G. Chen
Acta Materialia
2011-
期刊論文
Anomalous On-Current and Subthreshold Swing Improvement in Low-Temperature Polycrystalline-Silicon Thin-Film Transistors under Gate Bias Stress
C. S. Lin, Y. C. Chen, T. C. Chang*, F. Y. Jian, H. W. Li, Y. C. Chen, T. C. Chen, and Y. H. Tai
Applied Physics Letters
2011-
期刊論文
Bipolar resistive switching of Chromium Oxide for Resistive Random Access Memory
S. C. Chen, T. C. Chang*, S. Y. Chen, C. W. Chen, S. C. Chen, S. M. Sze, M. J. Tsai, M. J. Kao, and F. S. Yeh(Huang)
Solid State Electronics
2011-
期刊論文
Carrier transport and multi-level switching mechanism for Chromium Oxide resistive random-access memory
S. C. Chen, T. C. Chang*, S. Y. Chen , H. W. Li , Y. T. Tsai , C. W. Chen , S. M. Sze , F. S. Yeh(Huang), and Y. H. Tai
Electrochemical and Solid-State Letters
2011-
期刊論文
Charge Trapping Induced Frequency-Dependence Degradation in n-MOSFETs with High-k/Metal Gate Stacks
C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, Y. C. Hung, W. H. Lo, S. H. Ho, C. E. Chen, J. M. Shih, W. L. Chung, H. M. Chen, B. S. Dai, T. M. Tsai, G. Xia, O. Cheng, and C. T. Huang
Thin Solid Films
2011-
期刊論文
Charge Trapping Induced Parasitic Capacitance and Resistance in SONOS TFTs under Gate Bias Stress
C. S. Lin, Y. C. Chen, T. C. Chang*, F. Y. Jian, H. W. Li, S. C. Chen, Y. S. Chuang, T. C. Chen, Y. H. Tai, M. H. Lee, and J. S. Chen
IEEE Electron Device Letters
2011-
期刊論文
Developments in nanocrystal memory
T. C. Chang*, F. Y. Jian, S. C. Chen, Y. T. Tsai
Materials Today
2011-
期刊論文
Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Ammonia Incorporation
S. Y. Huang, T. C. Chang*, M. C. Chen, S. W. Tsao, S. C. Chen, C. T. Tsai, and H. P. Lo
Solid State Electronics
2011-
期刊論文
Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin Film Transistors
H. W. Li, T. C. Chang*, G. W. Chang, C. S. Lin, T. M. Tsai, F. Y. Jian, Y. H. Tai, and M. H. Lee
IEEE Electron Device Letters
2011-
期刊論文
Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors
T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, W. H. Lu, S. C. Chen, F. Y. Jian, C. S. Lin
Thin Solid Films
2011-
期刊論文
Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation
S. Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, C. T. Tsai, M. C. Hung, C. H. Tu, C. H. Chen, J. J. Chang, and W. L. Liau
Electrochemical and Solid-State Letters
2011-
期刊論文
Environment-Dependent Thermal Instability of Sol-gel derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
W. F. Chung, T. C. Chang*, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, and Y. H. Tai
Applied Physics Letters
2011-
期刊論文
Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
L. W. Feng, C. Y. Chang, T. C. Chang*, C. H. Tu, P. S. Wang, C. C. Lin, M. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, S. C. Chen, S. C. Chen
Thin Solid Films
2011-
期刊論文
H2O-assisted O2 adsorption in sol-gel derived amorphous indium gallium zinc oxide thin film transistors
W. F. Chung, T. C. Chang*, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, Y. H. Tai
Electrochemical and Solid-State Letters
2011-
期刊論文
Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. H. Ho, T. Y. Hsieh, W. H. Lo, C. E. Chen, J. M. Shih, W. l. Chung, B. S. Dai, H. M. Chen, G. Xia, O. Cheng, C. T. Huang
Applied Physics Letters
2011-
期刊論文
Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
C. H. Dai, T. C. Chang*, Y. J. Kuo, A. K. Chu, W. H. Lo, S. H. Ho, C. E. Chen, J. M. Shih, H. M. Chen, B. S. Dai, G. Xia, O. Cheng, C. T. Huang
Applied Physics Letters
2011-
期刊論文
Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment
P. C. Yang, T. C. Chang*, S. C. Chen, H. H. Su, J. Lu, H. C. Huang, D. S. Gan, and N. J. Ho
Solid State Electronics
2011-
期刊論文
Improving resistance switching characteristics with SiGeOx/SiGeON double layer for nonvolatile memory applications
Y. E. Syu, T. C. Chang*, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai, M. J. Tsai, and S. M. Sze
Electrochemical and Solid-State Letters
2011-
期刊論文
Influence of H2O dipole on subthreshold swing of amorphous indium-gallium-zinc-oxide thin film transistors
W. F. Chung , T. C. Chang*, H. W. Li , C. W. Chen , Y. C. Chen , S. C. Chen , T. Y. Tseng , and Y. H Tai
Electrochemical and Solid-State Letters
2011-
期刊論文
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
Y. T. Tsai, T. C. Chang*, C. C. Lin, S. C. Chen, C. W. Chen, S. M. Sze, F. S. Yeh (Hung), and T. Y. Tseng
Electrochemical and Solid-State Letters
2011-
期刊論文
Influence of bias-induced copper diffusion on the resistive switching characteristics of SiON thin film
P. C. Yang, T. C. Chang*, S. C. Chen, Y. S. Lin, H. C. Huang, and D. S. Gan
Electrochemical and Solid-State Letters
2011-
期刊論文
Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory
S. C. Chen, T. C. Chang*, W. R. Chen, Y. C. Lo, K. T. Wu, S. M. Sze, J. Chen, I. H. Liao, and F. S. Yeh(Huang)
Thin Solid Films
2011-
期刊論文
Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress
S. W. Tsao, T. C. Chang*, M. C. Wang, S. C. Chen, J. Lu, C. F. Weng, Y. F. Wei, W. C. Wu, and Y. Shi
Solid State Electronics
2011-
期刊論文
Influence of oxygen partial pressure on resistance random access memory characteristics of indium gallium zinc oxide
M. C. Chen, T. C. Chang*, S. Y. Huang, G. C. Chang, S. C. Chen, H. C. Huang, C. W. Hu, S. M. Sze, T. M. Tsai, D. S. Gan, F. S. Yeh(Huang), and M. J. Tsai
Electrochemical and Solid-State Letters
2011-
期刊論文
Investigating the Improvement of Resistive Switching Trends after Post-Forming Negative Bias Stress Treatment
H. C. Tseng, T. C. Chang*, J. J. Huang, P. C. Yang, Y. T. Chen, F. Y. Jian, S. M. Sze, and M. J. Tsai
Applied Physics Letters
2011-
期刊論文
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
T. C. Chen, T. C. Chang*, T. Y. Hsieh, W. S. Lu, F. Y. Jian, C. T. Tsai, S. Y. Huang, C. S. Lin
Applied Physics Letters
2011-
期刊論文
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
Y. T. Tsai, T. C. Chang*, W. L. Huang, C. W. Huang, Y. E. Syu, S. C. Chen, S. M. Sze, M. J. Tsai, and T. Y. Tseng
Applied Physics Letters
2011-
期刊論文
Investigation of the Gate-Bias Induced Instability for InGaZnO TFTs under Dark and Light Illumination
T. C. Chen, T. C. Chang*, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, F. Y. Jian, M. Y. Tsai
Thin Solid Films
2011-
期刊論文
Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure
Y. F. Chang, T. C. Chang*, and C. Y. Chang
Journal of Applied Physics
2011-
期刊論文
Low temperature synthesis and electrical characterization of Germanium doped Ti-based nanocrystals for nonvolatile memory
L. W. Feng, C. Y. Chang*, T. C. Chang*, C. H. Tu, P. S. Wang, C. C. Lin, M. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, S. C. Chen, and S. C. Chen
Thin Solid Films
2011-
期刊論文
Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment
G. C. Chang, T. M. Tsai, T. C. Chang*, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan, N. J. Ho
Electrochemical and Solid-State Letters
2011-
期刊論文
Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments
Y. F. Chang, L. W. Feng, T. C. Chang*
Materials Chemistry and Physics
2011-
期刊論文
NBTI Degradation in LTPS TFTs under Mechanical Tensile Strain
C. S. Lin, Y. C. Chen, T. C. Chang*, F. Y. Jian , W. C. Hsu, Y. J. Kuo, C. H. Dai, T. C. Chen, W. H. Lo , T. Y. Hsieh, and J. M. Shih
IEEE Electron Device Letters
2011-
期刊論文
Nitric acid oxidized ZrO2 as the tunneling oxide of cobalt-silicide nanocrystals memory devices
C. W. Hu, T. C. Chang*, C. H. Tu, Y. D. Chen, C. C. Lin, M. C. Chen, J. Y. Lin, S. M. Sze and T. Y. Tseng
IEEE Transactions on Nanotechnology
2011-
期刊論文
On the Origin of Gate-Induced Floating Body Effect in PD SOI p-MOSFETs
C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, F. Y. Jian, W. H. Lo, S. H. Ho, C. E. Chen, W. L. Chung, J. M. Shih, G. Xia, O. Cheng, and C. T. Huang
IEEE Electron Device Letters
2011-
期刊論文
On-Current Decrease after Erasing Operation in the Nonvolatile Memory Device with LDD Structure
G. W. Chang, T. C. Chang*, Y. E. Syu, Y. H. Tai, and F. Y. Jian
IEEE Electron Device Letters
2011-
期刊論文
Paraffin Wax Passivation Layer Improvements in Electrical Characteristics of Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
G. W. Chang, T. C. Chang*, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung, and Y. H. Tai,
Thin Solid Films
2011-
期刊論文
Redox Reaction Switching Mechanism in RRAM device with Pt/CoSiOX/TiN structure
Y. E. Syu, T. C. Chang*, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, and S. M. Sze
IEEE Electron Device Letters
2011-
期刊論文
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
K. C. Chang, T. M. Tsai, T. C. Chang*, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan, and S. M. Sze
Applied Physics Letters
2011-
期刊論文
Resistive Switching Characteristics of Ytterbium Oxide Thin Film for Nonvolatile Memory Application
H. C. Tseng, T. C. Chang*, J. J. Huang, Y. T. Chen, P. C. Yang, H. C. Huang, D. S. Gan, N. J. Ho, S. M. Sze, and M. J. Tsai
Thin Solid Films
2011-
期刊論文
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
S. Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, H. P. Lo, H. C. Huang, D. S. Gan, S. M. Sze, and M. J. Tsai
Solid State Electronics
2011-
期刊論文
Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gases
Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, W. F. Chung, Y. H. Chen, Y. H. Tai, T. Y. Tseng, and F. S. Yeh(Huang)
Thin Solid Films
2011-
期刊論文
Transient effect assisted NBTI degradation in p-channel LTPS TFTs under dynamic stress
C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, W. C. Hsu, F. Y. Jian, T. C. Chen, and Y. H. Tai
Journal of The Electrochemical Society
2011-
期刊論文
n+-doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal
M. C. Wang, T. C. Chang*, S. W. Tsao, Y. Z. Chen, S. C. Tseng, T. C. Hsu, D. J. Jan, C. F. Ai, and J. R. Chen
Solid State Electronics
2010-
期刊論文
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
L. W. Feng, C. Y. Chang*, Y. F. Chang, W. R. Chen, S. Y. Wang, P. W. Chiang and T. C. Chang*
Applied Physics Letters
2010-
期刊論文
A two-bit nonvolatile memory device with a transistor switch function accomplished with edge-FN tunneling operation
F. Y. Jian, T. C. Chang*, A. K. Chu, S. C. Chen, T. C. Chen, Y. E. Hsu, H. C. Tseng, C. S. Lin, T. F. Young, and Y. L. Yang
Electrochemical and Solid-State Letters
2010-
期刊論文
Analysis of Anomalous Capacitance Induced by TAGIDL in p-Channel LTPS TFTs
C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, F. Y. Jian, Y. S. Chuang, T. C. Chen, Y. C. Chen, and Y. H. Tai
Journal of The Electrochemical Society
2010-
期刊論文
Analysis of degradation mechanism in SONOS-TFT under hot-carrier operation
T. C. Chen, T. C. Chang*, S. C. Chen, T. Y. Hsieh, F. Y. Jian, C. S. Lin, H. W. Li, M. H. Lee, J. S. Chen, and C. C. Shih
IEEE Electron Device Letters
2010-
期刊論文
Asymmetric negative bias temperature instability degradation of poly-Si TFTs under static stress
C. F. Weng, T. C. Chang*, F. Y. Jian, S. C. Chen, J. Lu , I C. Lu, T. F. Young
Journal of The Electrochemical Society
2010-
期刊論文
Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
T. C. Chen, T. C. Chang*, C. T. Tsai, T. Y. Hsieh, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen
Applied Physics Letters
2010-
期刊論文
Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, J. Lu, W. F. Chung, Y. H. Tai, and T. Y. Tseng
Applied Physics Letters
2010-
期刊論文
Bipolar resistive switching characteristics of transparent indium gallium zinc oxide resistive random access memory
M. C. Chen, T. C. Chang*, S. Y. Huang, S. C. Chen, C. W. Hu, C. T. Tsai, and Simon M. Sze
Electrochemical and Solid-State Letters
2010-
期刊論文
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
C. C. Lin, T. C. Chang*, C. H. Tu, S. C. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin
J. Phys. D: Appl. Lett.
2010-
期刊論文
Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect
C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, W. C. Hsu, S. C. Chen, Y. H. Tai, F. Y. Jian, T. C. Chen, K. J. Tu, H. H. Wu and Y. C. Chen
Journal of The Electrochemical Society
2010-
期刊論文
Enhanced Gate-Induced Floating Body Effect in PD SOI n-MOSFETs under External Mechanical Strain
C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. C. Chen, C. T. Tsai, W. H. Lo, S. H. Ho, G. Xia, O. Cheng, and C. T. Huang
Surface & Coatings Technology
2010-
期刊論文
Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory
J. Lu, T. C. Chang*, Y. T. Chen, J. J. Huang, P. C. Yang, S. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, Y. Shi, and A. K. Chu
Applied Physics Letters
2010-
期刊論文
Formation and Nonvolatile memory characteristics of W nanocrystals by In-Situ Steam Generation Oxidation
S. C. Chen, T. C. Chang*, C. M. Hsieh, H. W. Li, S. M. Sze, W. P. Nien, C. W. Chan, F. S. Yeh(Huang), and Y. H. Tai
Thin Solid Films
2010-
期刊論文
Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application
Y. T. Chen, T. C. Chang*, J. Lu, J. J. Huang, P. C. Yang, S. C. Chen, A. K. Chu, H. C. Huang, D. S. Gan, N. J. Ho, and Y. Shi
Thin Solid Films
2010-
期刊論文
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient
C. W. Hu, T. C. Chang*, C. H. Tu, C. N Chiang, C. C. Lin, M. C. Chen, C. Y. Chang, Simon M. Sze, and T. Y. Tseng
Thin Solid Films
2010-
期刊論文
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
C. W. Hu, T. C. Chang*, C. H. Tu, Y. H. Huang, C. C. Lin, M. C. Chen, F. S. Huang, S. M. Sze, and T. Y. Tseng
Electrochemical and Solid-State Letters
2010-
期刊論文
Hydrogen-induced improvements in electrical characteristics of a-IGZO Thin Film Transistors
S. W. Tsao, T. C. Chang*, S. Y. Huang, M. C. Chen, S. C. Chen, C. C. Tsai,Y. J. Kuo, Y. C. Chen, W. C. Wu
Solid State Electronics
2010-
期刊論文
Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
L. W. Feng, C. Y. Chang*, Y. F. Chang, T. C. Chang*, S. Y. Wang, S. C. Chen, C. C. Lin, S. C. Chen, and P. W. Chiang
Applied Physics Letters
2010-
期刊論文
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
M. C. Chen, T. C. Chang*, C. T. Tsai, S. Y. Huang, S. C. Chen, C. W. Hu, S. M. Sze, and M. J. Tsai
Applied Physics Letters
2010-
期刊論文
Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
C. T. Tsai, T. C. Chang*, S. C. Chen, I. Lo, S. W. Tsao, M.C. Hung, J. J. Chang, C. Y. Wu, and C. Y. Huang
Applied Physics Letters
2010-
期刊論文
Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
T. C. Chen, T. C. Chang*, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen
Applied Physics Letters
2010-
期刊論文
Low temperature characteristics of a-Si:H Thin Film Transistor under Mechanical Strain
S. W. Tsao, T. C. Chang*, P. C. Yang, M. C. Wang, S. C. Chen, J. Lu, T. S. Chang, W. C. Kuo, W. C. Wu, and Y. Shi
Solid State Electronics
2010-
期刊論文
Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O-3 thin films deposited on indium tin oxide/glass substrates
K. H. Chen*, T. C. Chang, G. C. Chang, Y. E. Hsu, Y. C. Chen, and H. Q. Xu
Appl. Phys. A-Mater. Sci. Process.
2010-
期刊論文
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
M. C. Wang, S. W. Tsao, T. C. Chang*, Y. P. Lin, P. T. Liu, and J. R. Chen
Solid State Electronics
2010-
期刊論文
Multilevel resistive switching in Ti/CuxO/Pt memory devices
S. Y. Wang, C. W. Huang, D. Y. Lee, T. Y. Tseng*, and T. C. Chang
Journal of Applied Physics
2010-
期刊論文
Nitric acid oxidation of Si for the tunneling oxide application on CoSi2 nanocrystals nonvolatile memory
C. W. Hu, T. C. Chang*, C. H. Tu, Y. D. Chen, C. C. Lin, M. C. Chen, J. Y. Lin, S. M. Sze, and T. Y. Tseng
Journal of The Electrochemical Society
2010-
期刊論文
Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
S. C. Chen, T. C. Chang*, W. R. Chen, Y. C. Lo, K. T. Wu, S. M. Sze, Jason Chen, I. H. Liao, and F. S. Yeh(Huang)
Thin Solid Films
2010-
期刊論文
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
C. H. Dai, T. C. Chang*, Y. J. Kuo, S. C. Chen , C. C. Tsai, S. H. Ho, W. H. Lo, G. Xia, O. Cheng, and C. T. Huang
IEEE Electron Device Letters
2010-
期刊論文
Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
L. W. Feng, Y. F. Chang, C. Y. Chang*, T. C. Chang*, S. Y. Wang, P. W. Chiang, C. C. Lin, S. C. Chen, and S. C. Chen
Thin Solid Films
2010-
期刊論文
Temperature influence on Photo-leakage-current Characteristics of a-Si:H thin-film transistor
S. W. Tsao, T. C. Chang*, P. C. Yang, S. C. Chen, J. Lu, M. C. Wang, C. M. Huang, W. C. Wu, W. C. Kuo, and Y. Shi
Solid-State Electronics
2010-
期刊論文
Temperature-dependent memory characteristics of SONOS-TFTs
S. C. Chen, T. C. Chang*, Y. C. Wu, J. Y. Chin, Y. E. Syu, S. M. Sze, and C. Y. Chang
Thin Solid Films
2010-
期刊論文
Unusual threshold voltage shift caused by self-heating-induced charge trapping effect
F. Y. Jian, T. C. Chang*, A. K. Chu, T. C. Chen, S. C. Chen, C. S. Lin, H. W Li, M. H. Lee, J. S. Chen, and C. C. Shih
Electrochemical and Solid-State Letters
2009-
期刊論文
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film-transistors with supercritical fluid
M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu, and Y. Shi
Applied Physics Letters
2009-
期刊論文
Anomalous capacitance induced by GIDL in P-channel LTPS TFTs
C. S. Lin, Y. C. Chen, T. C. Chang*, S. C. Chen, F. Y. Jian, H. W. Li, T. C. Chen, C. F. Weng, J. Lu, and W. C. Hsu
IEEE Electron Device Letters
2009-
期刊論文
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
C. T. Tsai, T. C. Chang*, P. T. Liu, Y. L. Cheng, K. T. Kin, and F. S. Huang
Electrochemical and Solid-State Letters
2009-
期刊論文
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin
Journal of The Electrochemical Society
2009-
期刊論文
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
C. W. Hu, T. C. Chang*, C. H. Tu, P. K. Shueh, C. C. Lin, S. M. Sze, T. Y. Tseng, and M. C. Chen
Applied Physics Letters
2009-
期刊論文
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
C. W. Hu, T. C. Chang*, C. H. Tu, C. N. Chiang, C. C. Lin, S. W. Lee, C. Y. Chang, S. M. Sze, and T. Y. Tseng
Journal of The Electrochemical Society
2009-
期刊論文
Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers
W. R. Chen, T. C. Chang*, Y. T. Hsieh, and C. Y. Chang
IEEE Transactions on Nanotechnology
2009-
期刊論文
Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors
C. S. Lin, Y. C. Chen, T. C. Chang*, W. C. Hsu, S. C. Chen, H. W. Li, K. J. Tu, F. Y. Jian, and T. C. Chen
Electrochemical and Solid-State Letters
2009-
期刊論文
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin
Applied Physics Letters
2009-
期刊論文
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, L. W. Feng, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin
Journal of The Electrochemical Society
2009-
期刊論文
Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device
T. C. Chen, T. C. Chang*, F. Y. Jian, S. C. Chen, C. S. Lin, M. H. Lee, J. S. Chen, C. C. Shih
IEEE Electron Device Letters
2009-
期刊論文
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. C. Huang, S. C. Chen, J. Liu, D. S. Gan, N. J. Ho, T. F. Young, G. W. Jhang, and Y. H, Tai
Surface & Coatings Technology
2009-
期刊論文
Low-temperature ozone passivation for improving the quality of sputtered HfOx thin-film
S. C. Chen, T. C. Chang*, H. H. Su, P.C. Yang, J. Lu, H. C. Huang, D. S. Gan, N. J. Ho, and Y. Shi
MATERIALS LETTERS
2009-
期刊論文
NiSiGe nanocrystals for nonvolatile memory devices
C. W. Hu, T. C. Chang*, C. H. Tu, C. N. Chiang, C. C. Lin, S. M. Sze, and T. Y. Tseng
Applied Physics Letters
2009-
期刊論文
Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
L. W. Feng, C. Y. Chang*, T. C. Chang*, C. H. Tu, P. S. Wang, Y. F. Chang, M. C. Chen, and H. C. Huang
Applied Physics Letters
2009-
期刊論文
Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
Y. J. Kuo, T. C. Chang*, P. H. Yeh, S. C. Chen, C. H. Dai, C. H. Chao, T. F. Young, O. Cheng, and C. T. Huang
Thin Solid Films
2009-
期刊論文
Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs
Y. J. Kuo, T. C. Chang*, C. H. Dai, S. C. Chen, J. Lu, S. H. Ho, C. H. Chao, T. F. Young, O. Cheng, and C. T. Huang
Electrochemical and Solid-State Letters
2009-
期刊論文
Thermal analysis on the degradation of poly-silicon TFTs under AC stress
C. F. Weng, T. C. Chang*, Y. H. Tai, S. T. Huang, K. T. Wu, C. W. Chen, W. C. Kuo, T. F. Young
MATERIALS CHEMISTRY AND PHYSICS
2008-
期刊論文
A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment
C. T. Tsai, T. C. Chang*, K. T. Kin, P. T. Liu, P. Y. Yang, C. F. Weng, and F. S. Huang
Journal of Applied Physics
2008-
期刊論文
Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
L. W. Feng, T. C. Chang*, P. T. Liu, C. H. Tu, Y. C. Wu, C. Y. Yang, and C. Y. Chang
Thin Solid Films
2008-
期刊論文
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin
Applied Physics Letters
2008-
期刊論文
Elimination of photoleakage current in poly-Si TFTs using a metal-shielding structure
H. Y. Lu, T. C. Chang*, P. T. Liu, H. W. Li, C. W. Hu, K. C. Lin, Y. H. Tai, and S. Chi
Electrochemical and Solid-State Letters
2008-
期刊論文
Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film
W. R. Chen, T. C. Chang*, J. L. Yeh, and C. Y. Chang
Journal of The Electrochemical Society
2008-
期刊論文
Fabrication and characteristics of Ba(Zr-0.1,Ti-0.9)O-3 thin films on glass substrate
K. H. Chen, Y. C. Chen, C. F. Yang, and T. C. Chang
J. Phys. Chem. Solids
2008-
期刊論文
Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
W. R. Chen, T. C. Chang*, J. L. Yeh, S. M. Sze, and C. Y. Chang
Journal of Applied Physics
2008-
期刊論文
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, C. Y. Chang, and T. Y. Tseng
Electrochemical and Solid-State Letters
2008-
期刊論文
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
C. W. Hu, T. C. Chang*, P. T. Liu, C. H. Tu, S. K. Lee, S. M. Sze, C. Y. Chang, B. S. Chiou, and T. Y. Tseng
Applied Physics Letters
2008-
期刊論文
Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
C. T. Tsai, T. C. Chang*, P. T. Liu, Y. L. Cheng, and F. S. Huang
Applied Physics Letters
2008-
期刊論文
Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
W. R. Chen, T. C. Chang*, J. L. Yeh, C. Y. Chang, and S. C. Chen
Applied Physics Letters
2008-
期刊論文
Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers
W. R. Chen, T. C. Chang*, P. T. Liu, C. J. Wu, C. H. Tu, S. M. Sze, and C. Y. Chang
IEEE Electron Device Letters
2008-
期刊論文
Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
C. H. Tu, T. C. Chang*, P. T. Liu, C. Y. Yang, L. W. Feng, Y. C. Wu, S. M. Sze, and C. Y. Chang
Thin Solid Films
2008-
期刊論文
Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O-3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
C. F. Yang, K. H. Chen, Y. C. Chen, and T. C. Chang
Appl. Phys. A-Mater. Sci. Process.
2008-
期刊論文
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer
H. Y. Lu, T. C. Chang*, P. T. Liu, H. W. Li, C. W. Hu, K. C. Lin, C. C. Wang, Y. H. Tai, and S. Chi
Applied Physics Letters
2008-
期刊論文
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
W. R. Chen, T. C. Chang*, J. L. Yeh, S. M. Sze, and C. Y. Chang
Applied Physics Letters
2008-
期刊論文
Self-Heating Effect Induced NBTI Degradation in Poly-Si TFTs under Dynamic Stress
C. F. Weng, T. C. Chang*, H. P. Hsieh, S. C. Chen, W. C. Hsu, W. C. Kuo, and T. F. Young
Journal of The Electrochemical Society
2008-
期刊論文
Self-heating-induced negative bias temperature instability in poly-Si TFTs under dynamic stress
C. F. Weng, T. C. Chang*, H. P. Hsieh, S. C. Chen, W. C. Hsu, W. C. Kuo, and T. F. Young
Electrochemical and Solid-State Letters
2008-
期刊論文
Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices
C. H. Chen, T. C. Chang*, I. H. Liao, P. B. Xi, J. Hsieh, J. Chen, T. Huang, S. M. Sze, U. S. Chen, and J. R. Chen
Applied Physics Letters
2007-
期刊論文
A new pixel circuit compensating for brightness variation in lagre size and high resolution AMOLED displays
H. Y. Lu, T. C. Chang*, Y. H. Tai, P. T. Liu, and S. Chi
J. Disp. Technol.
2007-
期刊論文
A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
S. C. Chen, T. C. Chang*, P. T. Liu, Y. C. Wu, P. S. Lin, B. H. Tseng, J. H. Shy, S. M. Sze, C. Y. Chang, and C. H. Lien
IEEE Electron Device Letters
2007-
期刊論文
Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bending
M. C. Wang, T. C. Chang*, P. T. Liu, S. W. Tsao, and J. R. Chen
Electrochemical and Solid-State Letters
2007-
期刊論文
Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
S. C. Chen, T. C. Chang*, P. T. Liu, Y. C. Wu, P. S. Lin, J. Y. Chin, S. M. Sze, C. Y. Chang, and C. H. Lien
Surface & Coatings Technology
2007-
期刊論文
Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors
M. C. Wang, T. C. Chang*, P. T. Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, and J. R. Chen
Electrochemical and Solid-State Letters
2007-
期刊論文
Degradation behaviors of trigate nanowires poly-si TFTs with NH3 plasma passivation under hot-carrier stress
Y. C. Wu, T. C. Chang*, P. T. Liu, and L. W. Feng
Electrochemical and Solid-State Letters
2007-
期刊論文
Effects of laser annealing on the electrical characteristics of dynamic random access memory using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O-3 thin films
K. H. Chen, Y. C. Chen, C. F. Yang, Z. S. Chen, and T. C. Chang
Jpn. J. Appl. Phys. Part 2 - Regul. Pap. Brief Commun. Rev. Pap.
2007-
期刊論文
Effects of supercritical fluids activation on carbon nanotube field emitters
P. T. Liu, C. T. Tsai, T. C. Chang, K. T. Kin, P. L. Chang, C. M. Chen, and Y. C. Chen
IEEE Transactions on Nanotechnology
2007-
期刊論文
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
W. R. Chen, T. C. Chang*, J. L. Yeh, S. M. Sze, C. Y. Chang, and U. S. Chen
Applied Physics Letters
2007-
期刊論文
Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
W. R. Chen, T. C. Chang*, Y. T. Hsieh, S. M. Sze, and C. Y. Chang
Applied Physics Letters
2007-
期刊論文
Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
W. R. Chen, T. C. Chang*, P. T. Liu, C. H. Tu, J. L. Yeh, Y. T. Hsieh, R. Y. Wang, and C. Y. Chang
Surface & Coatings Technology
2007-
期刊論文
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
C. H. Tu, T. C. Chang*, P. T. Liu, C. F. Weng, H. C. Liu, L. T. Chang, S. K. Lee, W. R. Chen, S. M. Sze, and C. Y. Chang
Journal of The Electrochemical Society
2007-
期刊論文
Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
W. R. Chen, T. C. Chang*, P. T. Liu, P. S. Lin, C. H. Tu, and C. Y. Chang
Applied Physics Letters
2007-
期刊論文
Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
W. R. Chen, T. C. Chang*, P. T. Liu, C. H. Tu, F. W. Chi, S. W. Tsao, and C. Y. Chang
Surface & Coatings Technology
2007-
期刊論文
Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
C. H. Tu, T. C. Chang*, P. T. Liu, C. Y. Yang, L. W. Feng, C. C. Tsai, L. T. Chang, Y. C. Wu, S. M. Sze, and C. Y. Chang
J. Disp. Technol.
2007-
期刊論文
Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD
T. S. Chang, T. C. Chang*, P. T. Liu, S. W. Tsao, and F. S. Yeh
Thin Solid Films
2007-
期刊論文
Layout dependence on threshold voltage instability of hydrogenated amorphous silicon thin film transistors
H. Y. Tseng, K. Y. Chiang, H. Y. Lu, C. P. Kung, and T. C. Chang
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap.
2007-
期刊論文
Letter: Mechanisms for on/off currents in dual-gate a-Si : H thin-film transistors using indium-tin-oxide top-gate electrodes
C. Y. Liang, F. Y. Gan, F. S. Yeh, and T. C. Chang*
J. Soc. Inf. Disp.
2007-
期刊論文
Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization,
C. T. Tsai, T. C. Chang*, P. T. Liu, P. Y. Yang, Y. C. Kuo, K. T. Kin, P. L. Chang, and F. S. Huang
Applied Physics Letters
2007-
期刊論文
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
C. T. Tsai, P. T. Liu, T. C. Chang*, C. W. Wang, P. Y. Yang, and F. S. Yeh
IEEE Electron Device Letters
2007-
期刊論文
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
F. M. Yang, T. C. Chang*, P. T. Liu, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, and J. C. Lou
Applied Physics Letters
2007-
期刊論文
Metal nanocrystals as charge storage nodes for nonvolatile memory devices
P. H. Yeh, L. J. Chen, P. T. Liu, D. Y. Wang, and T. C. Chang
Electrochim. Acta
2007-
期刊論文
Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
F. M. Yang, T. C. Chang*, P. T. Liu, U. S. Chen, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, and J. C. Lou
Applied Physics Letters
2007-
期刊論文
Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
F. M. Yang, T. C. Chang*, P. T. Liu, Y. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, and J. C. Lou
Thin Solid Films
2007-
期刊論文
Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
S. C. Chen, T. C. Chang*, P. T. Liu, Y. C. Wu, J. Y. Chin, P. H. Yeh, L. W. Feng, S. M. Sze, C. Y. Chang, and C. H. Lien
Applied Physics Letters
2007-
期刊論文
Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
W. R. Chen, T. C. Chang*, P. T. Liu, J. L. Yeh, C. H. Tu, J. C. Lou, C. F. Yeh, and C. Y. Chang
Applied Physics Letters
2007-
期刊論文
Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals
P. H. Yeh, L. J. Chen, P. T. Liu, D. Y. Wang, and T. C. Chang
J. Nanosci. Nanotechnol.
2007-
期刊論文
Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
S. C. Chen, T. C. Chang*, P. T. Liu, Y. C. Wu, P. H. Yeh, C. F. Weng, S. M. Sze, C. Y. Chang, and C. H. Lien
Applied Physics Letters
2007-
期刊論文
Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
M. C. Wang, T. C. Chang*, P. T. Liu, S. W. Tsao, and J. R. Chen
Applied Physics Letters
2007-
期刊論文
Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
S. C. Chen, T. C. Chang*, P. T. Liu, Y. C. Wu, C. C. Ko, S. Yang, L. W. Feng, S. M. Sze, C. Y. Chang, and C. H. Lien
Applied Physics Letters
2007-
期刊論文
Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs
M. C. Wang, T. C. Chang*, P. T. Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, and J. R. Chen
Electrochemical and Solid-State Letters
2007-
期刊論文
Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage current
M. C. Wang, T. C. Chang*, P. T. Liu, Y. Y. Li, F. S. Huang, Y. J. Mei, and J. R. Chen
Thin Solid Films
2007-
期刊論文
Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal
M. C. Wang, T. C. Chang*, P. T. Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Huang, and J. R. Chen
Applied Physics Letters
2007-
期刊論文
Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications
K. H. Chen, Y. C. Chen, Z. S. Chen, C. F. Yang, and T. C. Chang
Appl. Phys. A-Mater. Sci. Process
2007-
期刊論文
The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stress
M. C. Wang, T. C. Chang*, P. T. Liu, S. W. Tsao, Y. P. Lin, and J. R. Chen
Electrochemical and Solid-State Letters
2007-
期刊論文
Tungsten nanocrystal memory devices improved by supercritical fluid treatment
C. H. Chen, T. C. Chang*, I. H. Liao, P. B. Xi, C. T. Tsai, P. Y. Yang, J. Hsieh, J. Chen, U. S. Chen, and J. R. Chen
Applied Physics Letters
2007-
期刊論文
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
F. M. Yang, T. C. Chang*, P. T. Liu, P. H. Yeh, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze, and J. C. Lou
Applied Physics Letters
2007-
期刊論文
n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
M. C. Wang, T. C. Chang*, P. T. Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Yeh, and J. R. Chen
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