First principles study of NH3, H2S, Cl2, and C2H2 gases adsorption on defective GaSe monolayer
W.Y. Cheng, C.R. Chang, and H.R. Fuh
Applied Surface Science
2021-04
期刊論文
Giant gauge factor of Van der Waals material based strain sensors
W.J. Yan, H.R. Fuh, Y.h. Lv, K.Q. Chen, T.Y. Tsai, Y.R. Wu, T.H. Shieh, K.M. Hung, J.C. Li, D. Zhang, C. Ó Coileáin, S. K. Arora, Z. Wang, Z.T. Jiang, C.R. Chang & H.C. Wu
Nature Communications
2020-04
期刊論文
Highly Sensitive, Selective, Stable, and Flexible NO2 Sensor Based on GaSe
Y.-F. Zhao, H.-R. Fuh, C. Coileáin, C. P. Cullen, S.-L. Tanja, G. S. Duesberg, Ó. L. Camar, D. Zhang, J. Cho, M. Choi, B.-S. Chun, C.-R. Chang, H.-C. Wu
Advanced Materials Technologies
2020-03
期刊論文
First-Principles Study for Gas Sensing of Defective SnSe2 Monolayers
W.-Y. Cheng, H.-R. Fuh, C.-R. Chang
Applied Sciences-Basel
2019-08
期刊論文
High Selectivity Gas Sensing and Charge Transfer of SnSe2
Giant and Linear Piezo-Phototronic Response in Layered
GaSe Nanosheets
T.H. Jia, H.R. Fuh, D.Y. Chen, M. Abid, M. Abid, D. Zhang, A.B. Sarker, J. Cho, M. Choi, B.S. Chun, H.J. Xu, C.Ó Coileáin, H.J. Liu, C.R. Chang, and H.C. Wu
Advanced Electronic Materaterials
2018-03
期刊論文
Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides
H.J. Xu, M.C. Hsu, H.R. Fuh, J.F Feng, X.F. Han, Y.F. Zhao, D. Zhang, X.M. Wang, F. Liu, H.J. Liu, J. Cho, M. Choi, B.S. Chun, C. O´ Coileáin, Z. Wang, M. B. A. Jalil, H.C. Wu, and C.R. Chang
Journal of Materials Chemistry C
2017-12
期刊論文
Thermoelectric performance and electronic properties of transition metal monosilicides
T.Y. Ou-Yang, G.J. Shu, and H.R. Fuh
EPL
2017-02
期刊論文
Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering
Y.C. Wu, H.R. Fuh, D. Zhang, C. Coileáin, H.J. Xu, J. Cho, M. Choi, B.C. Sun; X.J. Jiang; M. Abid, M. Abid, H.J. Liu, J.J. Wang; I.V. Shvets, C.R. Chang, and H.C. Wu
Nano Energy
2016-11
期刊論文
Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2
H.R. Fuh, B.H. Yan, S.C. Wu, C. Felser, and C.R. Chang
New journal of Physics
2016-10
期刊論文
Spin orbit coupling gap and indirect gap in strain tuned topological insulator-antimonene
Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)
H.R. Fuh, C.R. Chang, Y.K. Wang, R. F. L. Evans, Roy W. Chantrell, and H.T. Jeng
Scientific Report
2014-10
期刊論文
New ferromagnetic double perovskites semiconductor: La2FeMO6 (M= Co, Rh, and Ir)
H.R. Fuh, K.C. Weng , Y.P. Liu, and Y.K. Wang*
Journal of Alloys and Compounds
2014-05
期刊論文
New type of ferromagnetic insulator: double perovskite La2NiMO6 (M = Mn, Tc, Re, Ti, Zr, and Hf).
H.R. Fuh, Y.P. Liu, Z.R. Xiao, and Y.K. Wang*
Journal of Magnetism and Magnetic Materials
2013-03
期刊論文
First principle research of possible HM-AFM in double perovskites A2MoOsO6 and A2TcReO6 (A = Si, Ge, Sn, and Pb) with group IVA elements set on the A-site position
H.R. Fuh, Y.P. Liu , and Y.K. Wang*
Solid State Sciences
2013-01
期刊論文
Electronic structures of compensated magnetism in double perovskites A2CrRu(Os)O6 (A = Si, Ge, Sn, and Pb) from ab initio calculations