P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke Holtzman, Daniel L.
Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi,
Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen*,
Michael S. Fuhrer*
ACS Applied Electronic Materials
2022-02
期刊論文
Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors
Chih-Yi Cheng, Wei-Liang Pai, Yi-Hsun Chen, Naomi Tabudlong Paylaga, Pin-Yun Wu, Chun-Wei Chen, Chi-Te Liang, Fang-Cheng Chou, Raman Sankar, Michael S. Fuhrer, Shao-Yu Chen*, and Wei-Hua Wang*
Nano Letters
2022-01
期刊論文
Defects, band bending and ionization rings in MoS2
Iolanda Di Bernardo, James Blyth, Liam Watson, Kaijian Xing, Yi-Hsun Chen, Shao-Yu Chen, Mark T Edmonds, Michael Fuhrer
Journal of Physics: Condensed Matter
2020-12
期刊論文
Ultrathin Ga2O3 glass: a large scale passivation and protection material for monolayer WS2
Matthias Wurdack, Tinghe Yun, Eliezer Estrecho, Nitu Syed, Semonti Bhattacharyya, Maciej Pieczarka, Ali Zavabeti, Shao-Yu Chen, Benedikt Haas, Johannes Mueller, Qiaoliang Bao, Christian Schneider, Yuerui Lu, Michael S Fuhrer, Andrew G Truscott, Torben Daeneke, Elena A Ostrovskaya
Advanced Materials
2020-08
期刊論文
Ground and Excited Exciton Polarons in Monolayer MoSe2
Thomas Goldstein, Yueh-Chun Wu, Shao-Yu Chen, Takashi Taniguchi, Kenji Watanabe, Kalman Varga, Jun Yan
The Journal of Chemical Physics
2019-12
期刊論文
Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen, Jan Sebastian Dominic Rodriguez, Han-Ting Liao, Kenji Watanabe, Takashi Taniguchi, Chun-Wei Chen, Raman Sankar, Fang-Cheng Chou, Hsiang-Chih Chiu, Wei-Hua Wang
npj 2D Materials and Applications
2019-03
期刊論文
Luminescent Emission of Excited Rydberg Excitons from Monolayer
WSe2
Shao-Yu Chen, Zhengguang Lu, Thomas Goldstein, Jiayue Tong, Andrey Chaves, Jens Kunstmann, L. S. R. Cavalcante, Tomasz Woźniak, Gotthard Seifert, D. R. Reichman, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Jun Yan
Nano Letters
2018-09
期刊論文
Coulomb-bound four-and five-particle intervalley states in an atomically-thin semiconductor
Shao-Yu Chen, Thomas Goldstein, Takashi Taniguchi, Kenji Watanabe, Jun Yan
Nature Communications
2018-01
期刊論文
Superior valley polarization and coherence of 2s excitons in monolayer WSe2
Shao-Yu Chen, Thomas Goldstein, Jiayue Tong, Takashi Taniguchi, Kenji Watanabe, Jun Yan
Physical Review Letters
2017-01
期刊論文
Intrinsic phonon bands in high-quality monolayer T′ molybdenum ditelluride
Shao-Yu Chen, Carl H Naylor, Thomas Goldstein, AT Charlie Johnson, Jun Yan
ACS Nano
2016-08
期刊論文
Activation of new Raman modes by inversion symmetry breaking in Type II Weyl semimetal candidate T′-MoTe2
Shao-Yu Chen, Thomas Goldstein, Dhandapani Venkataraman, Ashwin Ramasubramaniam, Jun Yan
Nano Letters
2016-06
期刊論文
Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers
Thomas Goldstein*, Shao-Yu Chen*, Di Xiao, Ashwin Ramasubramaniam, Jun Yan
Scientific Reports
2015-07
期刊論文
Antenna enhanced graphene THz emitter and detector
Jiayue Tong, Martin Muthee, Shao-Yu Chen, Sigfrid K. Yngvesson, Jun Yan
Nano Letters
2015-06
期刊論文
Extrinsic origin of persistent photoconductivity in monolayer MoS2 field effect transistors
專利