研究人才詳細資料
技術移轉
| 出版年月 | 著作類別 | 著作名稱 | 作者 | 收錄出處 |
|---|---|---|---|---|
| 2025-09 | 期刊論文 | The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor | Po-Hsuan Chang, Chong-Rong Huang, Chia-Hao Liu, Kuan-Wei Lee , and Hsien-Chin Chiu* | Micromachines |
| 2025-06 | 研討會論文 | 10 Watt CW Power Handling SPDT RF Switch Using E-mode p-GaN Dual-Gate HEMT Technology | Hsien-Chin Chiu, Chia-Han Lin, Chia-Hao Yu, Chong-Rong Huang, Hsuan-Ling Kao, Hsiang-Chun Wang, Po-Tsung Tu, Barry Lin | |
| 2025-05 | 研討會論文 | 0.25um GaN on Silicon HEMT Technology for RF Application | Heng-Ching Lin, Tzu-Ping Chen, Kuang-Yao Chen, Kai-Hsuan Wang, Geng-Yen Lee, Alex Chun-Liang Hou, Hsien-Chin Chiu, Barry J. F. Lin | |
| 2025-05 | 研討會論文 | Enhancing Key Performance of Vertical GaN MOS Capacitors Through GaOx Interface Technology | Jinpei Lin;Xinyi Pei;Xiaohua Li;Haiwen Liu;Renqiang Zhu; Chunfu Zhang;Hsien-Chin Chiu;Jianbo Liang;Hezhou Liu;Junfa Mao;Xinke Liu | |
| 2025-05 | 研討會論文 | High Power Added Efficiency Enhancement-Mode -Gate RF HEMT with Engineered Mg Doping Profile in p-GaN Layer | Hsien-Chin Chiu12, Chong-Rong Huang1, Chao-Wei Chiu1, Chia-Han Lin1, Chia-Hao Yu1, Hsuan-Ling Kao1, Barry Lin3 | |
| 2025-03 | 期刊論文 | High Power Added Efficiency Enhancement-Mode -Gate RF HEMT with High/Low p-GaN Doping Profile | Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin |
113-2221-E-182-043-MY2 IEEE Journal of the Electron Devices Society |
| 2024-05 | 期刊論文 | Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design | Chong-Rong Huang, Hsien-Chin Chiu*, Hsuan-Ling Kao, Hsiang-Chun Wang, Shinn-Yn Lin, Chih-Tien Chen, and Kuo-Jen Chang | Journal of Vacuum Science and Technology B (JVST B) |
| 2024-05 | 研討會論文 | Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using buffer-free structure on 6” SiC substrate | Chong-RongHuang, Hsien-Chin Chiu, Chao-Wei Chiu, Hsuan-Ling Kao, Yong-Xiang Zhuang, Yang-ChingHo, Chen-Kang Chuang, Chih-Tien Chen and Kuo-Jen Chang | |
| 2024-04 | 期刊論文 | Microwave Resonators Embedded With Carbon Nanotubes for Real-Time Gas Sensing | Hsuan-Ling Kao,Yun-Chen Tsai, Li-Chun Chang, Hsien-Chin Chiu | IEEE Sensors Journal |
| 2024-01 | 期刊論文 | Fully Inkjet-Printed Gas-Sensing Antenna Based on Carbon Nanotubes for Wireless Communication Applications | Kao, H.-L. , Chang, L.-C. , Tsai, Y.-C. , Chen, C.-B. , Chiu, H.-C | ECS Journal of Solid State Science and Technology |
| 2023-05 | 研討會論文 | RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate | Chien-Hsian Chao 1, Hsien-Chin Chiu1, Hsiang-Chun Wang1, Chong Rong Haung1, Chen Kang Chuang1, Yang Ching Ho1 | |
| 2022-09 | 期刊論文 | Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor | Liu, C.-H.; Huang, C.-R.; Wang, H.-C.; Kang, Y.-J.; Chiu, H.-C.; Kao, H.-L.; Chu, K.-H.; Kuo, H.-C.; Chen, C.-T.; Chang, K.-J. | Micromachines |
| 2022-05 | 期刊論文 | Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate | Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Hsien-Chin Chiu*, Hsuan-Ling Kao and Xinke Liu | Micromachines |
| 2022-05 | 期刊論文 | Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer | Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih , Hsien-Chin Chiu*, Hsuan-Ling Kao and Xinke Liu | Materials |
| 2022-05 | 研討會論文 | Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate | Liu, Chia-Hao ; Chiu, Hsien-Chin ; Wang, Hsiang-Chun ; Haung, Chong Rong | |
| 2022-05 | 研討會論文 | Improved RF Characteristics of AlGaN/AlN/GaN HEMT by using 3C-SiC/Si Substrate | Chao, Chien-Hsian ; Chiu, Hsien-Chin. ; Wang, Hsiang-Chun ; Liu, Chia-Hao ; Haung, Chong Rong;Chen, Chih-Tien Chang, Kuo-Jen | |
| 2021-11 | 期刊論文 | Characteristic Analysis of AlGaN/GaN HEMT with Composit-ed Buffer Layer on High-Heat Dissipation Poly-AlN Substrates | Chong-Rong Huang, Hsien-Chin Chiu*, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen and Kuo-Jen Chang | Membrances |
| 2021-11 | 期刊論文 | Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator | Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong, Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Shinn-Yn Lin | Membrances |
| 2021-10 | 期刊論文 | Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer | Chia-Hao Liu, Hsien-Chin Chiu*, Hsiang-Chun Wang, Hsuan-Ling Kao, Chong-Rong Huan | IEEE ELECTRON DEVICE LETTERS |
| 2021-05 | 期刊論文 | High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate | Yu-Chun Huang , Hsien-Chin Chiu * , Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang and Si-Wen Chen, | Micromachines |
| 2021-05 | 研討會論文 | Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer | Liu, Chia-Hao ; Chiu, Hsien-Chin ; Wang, Hsiang Chun ; Kao, Hsuan Ling ; Haung, Chong Rong | |
| 2021-05 | 研討會論文 | Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design | Shih, Min-Hung ; Wang, Hsiang-Chun ; Chiu, Hsien-Chin ; Kao, Hsuan-Ling ; Li, Chung-Yi | |
| 2021-05 | 研討會論文 | Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications | Huang, Chong Rong; Chiu, Hsien-Chin;. Liu, Chia-Hao;Wang, Hsiang-Chun; Kao, Hsuan-Ling; Chen, Ming Chin; Liu, Chia Cheng; Odnoblyudov, Vladimir | |
| 2021-03 | 期刊論文 | A 5-bit X-band GaN HEMT-Based Phase Shifter | Hsien-Chin Chiu, Chun-Ming Chen, Li-Chun Chang , and Hsuan-Ling Kao | Electronics |
| 2020-12 | 期刊論文 | The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design” Electronics | Chong-Rong Huang, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Hsien-Chin Chiu*, Chih-Tien Chen, Kuo-Jen Chang, | Electronics |
| 2020-06 | 期刊論文 | The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate | H.Y. Wang, H.C. Chiu*, W.C. Hsu, C.M. Liu, C.Y. Chuang, J.Z. Liu and Y.L. Huang | Coatings |
| 2020-05 | 期刊論文 | AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain | Hsuan-ling Kao, Hsien-Chin Chiu, Shuang-Hao Chuang, and H. H. Hsu, | ECS Journal of Solid State Science and Technology |
| 2020-05 | 期刊論文 | High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator | Hsiang-Chun Wang, Hsien-Chin Chiu*, Chong-Rong Huang , Hsuan-Ling Kao, Feng-Tso Chien | Energies |
| 2020-04 | 期刊論文 | Low-Mg Out-Diffusion of a Normally Off p-GaN Gate High-Electron-Mobility Transistor by Using the Laser Activation Technique | Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chong-Rong Huang, Chao-Wei Chiu, Chih-Tien Chen, Kuo-Jen Chang | Materials Science in Semiconductor Processing |
| 2020-03 | 期刊論文 | Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application | Xinke Liu, Xuanhua Deng, Xiaohua Li, Hsien-Chin Chiu*, Yuxuan Chen, V. Divakar Botcha, Min Wang, and Wenjie Yu, Chia-Han Lin | Journal of Alloys and Compounds |
| 2020-02 | 期刊論文 | Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates | Xinke Liu, Hao-Yu Wang, Hsien-Chin Chiu*, Yuxuan Chen, Dabing Li, Chong-Rong Huang, Hsuan-Ling Kao, Hao-Chung Kuo, Sung-Wen Huang Chen | Journal of Alloys and Compounds |
| 2020-02 | 期刊論文 | Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region | Xinke Liu, Hsien-Chin Chiu*, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, and Chong-Rong Haung | IEEE Journal of the Electron Devices Society |
| 2020-01 | 期刊論文 | Low Gate Lag Normally-off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal | Chia-Hao Liu, Hsien-Chin Chiu*, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh | Crystals |
| 2019-12 | 期刊論文 | Dynamic Behavior Improvement of Normally-off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process | Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien | IEEE Journal of the Electron Devices Society |
| 2019-11 | 期刊論文 | Mechanical tensile strain for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate | Hsuan-ling Kao, Shuang-Hao Chuang, Cheng-Lin Cho, Hsien-Chin Chiu, Hou-Yu Wang, and H. H. Hsu | Journal of Alloys and Compounds |
| 2019-06 | 期刊論文 | The Demonstration of Recessed Anodes AlGaN/GaN Schottky Barrier Diodes Using Microwave Cyclic Plasma Oxidation/Wet Etching Techniques | Kuang-Po Hsueh, Hsien-Chin Chiu *, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Wen-Yen Lin | Japanese Journal of Applied Physics |
| 2019-02 | 期刊論文 | Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage | Kuang-Po Hsueh, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chih-Wei Hu, Rong Xuan | Materials Science in Semiconductor Processing |
| 2018-11 | 期刊論文 | High Uniformity Normally-off p-GaN Gate HEMT Using Self-terminated Digital Etching Technique | Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Wei Hu and Rong Xuan, | IEEE Trans. Electron Device |
| 2018-10 | 期刊論文 | Fully Inkjet-Printed Dual-Mode Ring Bandpass Filter Using a Cross-Bridge Structure Embedded With a Metal-Insulator-Metal Capacitor | Cheng-Lin Cho, Hsuan-ling Kao, Yung-Hsien Wu, Hsien-Chin Chiu, and Li-Chun Chang | IEEE Transactions on Components, Packaging and Manufacturing Technology |
| 2018-10 | 期刊論文 | High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique” | Hsien-Chin Chiu, Lung-I Chou, Hsiang-Chun Wang, Hsuan-Ling Kao, Chia-Han Lin, Ji-Xian Chen, Jen-Inn Chyi, Chih-Tien Chen, Kuo-Jen Chang, | ECS Journal of Solid State Science and Technology |
| 2018-08 | 期刊論文 | Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-substrate Via Technique and Backside Heat Sink Metal on Silicon-on-insulator Substrates | Kuang-Po Hsueh, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Tien Chen, Kuo-Jen Chang, and Hsien-Chin Chiu*, | ECS Journal of Solid State Science and Technology |
| 2018-06 | 期刊論文 | 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer using CMOS-Compatible Contact Materials | Xinke Liu, Hsien-Chin Chiu*, Hao-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien | IEEE Journal of the Electron Devices Society |
| 2018-05 | 研討會論文 | High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer | Hao-Yu Wang1,Xinke Liu2, Hsien-Chin Chiu1*, Cong Hu1, Hsiang-Chun Wang1, Hsuan-Ling Kao1, Feng-Tso Chien3, | |
| 2018-01 | 期刊論文 | High-Performance Normally-off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design | Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan | IEEE Journal of the Electron Devices Society |
| 2017-11 | 期刊論文 | “Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs | Hsien-Chin Chiu, Min-Li Chou, Chun-Hu Cheng, Hsuan-ling Kao, Cheng-Lin Cho, | Microelectronics Reliability |
| 2017-11 | 期刊論文 | RF Performance of in-situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-inch Silicon-on-Insulator (SOI) Substrate | Hsien-Chin Chiu, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan | IEEE Trans. Electron Device |
| 2017-10 | 期刊論文 | Effect of N2O/BCl3 Cyclical Recess Etching Technique Used Prior to Anode Metal Deposition in AlGaN/GaN Schottky Barrier Diodes | Kuang-Po Hsueh, Hsiang-Chun Wang, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Feng-Tso Chien, Hsien-Chin Chiu | ECS Journal of Solid State Science and Technology |
| 2017-10 | 期刊論文 | Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate | Hsien-Chin Chiu, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Hou-Yu Wang, Jen-Inn Chyi | Semiconductor Science and Technology |
| 2017-10 | 研討會論文 | InAlN/GaN HEMT Using Microwave Annealing for Low Temperature Ohmic Contact Formation | Lung-I Chou, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu*, Jen-Inn Chyi, How-Ting Wang and Dong-Long Chiang | |
| 2017-07 | 期刊論文 | Effect of Various Fe-doped AlGaN Buffer Layer of AlGaN/GaN HEMTs on Si Substrate | Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Rong Xuan, Chih-Wei Hu, and Kuang-Po Hsueh | J. Vac. Sci. Technol. B |
| 2017-05 | 期刊論文 | AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers | Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Kuang-Po Hsueh | Microelectronics Reliability |
| 2017-05 | 期刊論文 | Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN schottky barrier diodes with anode edge AlON spacers | Kuang-Po Hsueh, Li-Yi Peng, Yuan-Hsiang Cheng, , Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, and Hsien-Chin Chiu* | Journal of Alloys and Compounds |
| 2017-04 | 期刊論文 | Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes | Kuang-Po Hsueh, Yuan-Hsiang Cheng, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu*,Chih-Wei Hu, Rong Xuan | Materials Science in Semiconductor Processing |
| 2017-03 | 期刊論文 | A 60 GHz CMOS Frequency Tripler with Broadband Performance | Min-Li Chou, Hsien-Chin Chiu*, Hsuan-Ling Kao and Fan-Hsiu Huang | IEEE Microwave and Wireless Components Letters |
| 2016-11 | 期刊論文 | Electrical Characterization of Gate Recessed AlGaN/GaN High Electron Mobility Transistors with p-GaN Passivation Layer | Kuang-Po Hsueh, Feng-Tso Chien, Li-Yi Peng, Chih-Wei Yang, Hou-Yu Wang, Kai-Di Mai, and Hsien-Chin Chiu* | Journal of Vacuum Science & Technology B |
| 2016-11 | 研討會論文 | The Influence of AlGaN-GaN Schottky Barrier Diode with SiH4 Doping in Barrier Layer | Jiun-Wei Chiu, Shang-Cyun Chen, Bo-Hong Li, Hsien-Chin Chiu, Rong Xuan, Chih-Wei Hu | |
| 2016-09 | 研討會論文 | Effects of Different Fe-doped GaN Buffer in AlGaN/GaN HEMTs on Si Substrate | Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Hsien-Chin Chiu*, Rong Xuan, Chih-Wei Hu, | |
| 2016-05 | 期刊論文 | Temperature Dependency and Reliability of Through Substrate Via InAlN/GaN High Electron Mobility Transistors as Determined Using Low Frequency Noise Measurement | Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng | Japanese Journal of Applied Physics |
| 2016-05 | 期刊論文 | The ESD Protection Characteristic and Low-Frequency Noise Analysis of GaN Schottky Diode with Fluorine-Based Plasma Treatment | Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien | Microelectronics Reliability |
| 2016-04 | 期刊論文 | Normally-off Matrix Layout p-GaN GATE AlGaN/GaN Power HEMT with Through Substrate Via Process | Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Kai-Di Mai, Hsuan-Ling Kao, Chien-Kai Tung, Tsung-Cheng Chang, Schang-jing Hon, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng, | Journal of Vacuum Science & Technology B |
| 2016-03 | 期刊論文 | High Thermal Stability of GaN Schottky Diode with Diamond-like Carbon (DLC) Anode Design | Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Yuan-Hsiang Cheng, Hsiang-Chun Wang, Hsuan-Ling Kao, and Jen-Inn Chyi | Journal of The Electrochemical Society |
| 2016-02 | 期刊論文 | The Characterization of InAlN/AlN/GaN HEMTs using Silicon-on-Insulator (SOI) Substrate Technology | Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao,G.-Y. Lee and Jen-Inn Chyi, | Journal of The Electrochemical Society |
| 2015-05 | 研討會論文 | “Micromachined p-GaN Gate Normally-off Power HEMT with an Optimized Air-bridge Matrix Layout Design” (Best Poster Presentation) | Chih-Wei Yang, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chien-Kai Tung, Tsung-Cheng Chang and Schang-jing Hon, | |
| 2015-04 | 期刊論文 | Device Stress Evaluation of InAs/AlSb HEMT on Silicon Substrate with Refractory Iridium Schottky Gate Metal | Hsien-Chin Chiu, Wen-Yu Lin, Chia-Yi Chou, Shih-Hsien Yang, Kai-Di Mai, Pei-chin Chiu, W. J. Hsueh, and Jen-Inn Chyi | Microelectronic Engineering |
| 2015-04 | 期刊論文 | The Device Characteristics of Ir- and Ti-Based Schottky Gates AlSb/InAs High Electron Mobility Transistors” | Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, and Jen-Inn Chyi | Microelectronics Reliability |
| 2015-02 | 期刊論文 | Analysis of the Back-Gate Effect in Normally-off p-GaN Gate High Electron Mobility Transistor | Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Yue-Ming Hsin, Jen-Inn Chyi | IEEE Transactions on Electron Devices |
| 2015-02 | 期刊論文 | Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals | Hsien-Chin Chiu, Chia-Hsuan Wu, Che-Kai Lin, Feng-Tso Chien, | Materials Science in Semiconductor Processing |
| 2015-01 | 期刊論文 | High Performance Micromachined GaN on Si HEMT with Backside Diamondlike-Carbon/Titanium Heat Dissipation Layer | Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Hsuan-Ling Kao, Nai-Chuan Chen, Feng-Tso Chien, Ming-Chi Kan, | Applied Physics Express |
| 2015-01 | 期刊論文 | N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator | Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, J.-I. Chyi,and G.-Y. Lee | Microelectronics Reliability |
| 2014-07 | 期刊論文 | Inkjet printed series-fed two-dipole antenna comprising a balun filter on liquid crystal polymer substrate | H. L. Kao, C. S. Yeh, X. Y. Zhang, C. L. Cho, X. Dai, B. H. Wei, L .C. Chang, H. C. Chiu | IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY |
| 2014-06 | 期刊論文 | Bending effect of an inkjet-printed series-fed two-dipole antenna on a liquid crystal polymer substrate | H. L. Kao, C. L. Cho, L .C. Chang, X. Y. Zhang, B. H. Wei, X. Dai, H. C. Chiu | IEEE Antennas and Wireless Propagation Letters |
| 2014-06 | 期刊論文 | Device Characteristics of AlGaN/GaN MIS-HEMTs with High-k HfxZr1-xO2(x=0.66, 0.47, 0.15) Insulator Layer | Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Feng-Tso Chien | Microelectronics Reliability |
| 2014-06 | 期刊論文 | High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs | Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Yue-Ming Hsin, Jen-Inn Chyi, Chang-Luen Wu, Chian-Sern Chang | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
| 2014-06 | 研討會論文 | High Performance Micromachined GaN on Si HEMT with Backside Diamondlike-Carbon/Titanium Heat Dissipation Layer | Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, and Ming-Chi Kan | |
| 2014-05 | 期刊論文 | Band Offsets and Electrical Stability Characterization of Zr-doped ZnO Thin-Film Transistors with a Gd2O3 Gate Insulator | Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, and Kuang-Po Hsueh | Microelectronic Engineering |
| 2014-02 | 期刊論文 | A Novel Micromachined AlGaN/GaN Power HEMT with Air-Bridged Matrix Heat Redistribution Layer Design | Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao, Heng-Kuang Lin | IEEE ELECTRON DEVICE LETTERS |
| 2014-02 | 期刊論文 | An Investigation of Device Reliability for a Micro-machined AlGaN/GaN/Si High Electron Mobility Transistor Using Low Frequency Noise Measurement | Hsien-Chin Chiu, Hsiang-Chun Wang, Chia-Hsuan Wu, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien | Microelectronic Engineering |
| 2013-12 | 期刊論文 | Development of Electrostatic Discharge Protection Solution in GaN Technology | Zhixin Wang, Juin J. Liou, Kuan-Liang Cho, Hsien-Chin Chiu | IEEE ELECTRON DEVICE LETTERS |
| 2013-11 | 期刊論文 | Characteristics of AlGaN/GaN HEMTs with Various Field-Plate and Gate-to-Drain Extensions | Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Fan-Hsiu Huang, Hsuan-Ling Kao and Feng-Tso Chien | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| 2013-09 | 期刊論文 | Highly Thermally Stable In Situ SiNX Passivation AlGaN/GaN Enhancement-Mode High Electron Mobility Transistors Using TiW Refractory Gate Structure | H.C. Chiu, C.H. Chen, C.W. Yang, H.L. Kao, F.H. Huang, S.W. Peng, H.K. Lin | Journal of Vacuum Science & Technology B |
| 2013-09 | 期刊論文 | Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology | Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, Kuang-Po Hsueh | Japanese Journal of Applied Physics |
| 2013-08 | 期刊論文 | Sidewall Defects of AlGaN/GaN HEMTs Evaluated by Low Frequency Noise Analysis | Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang | Microelectronics Reliability |
| 2013-01 | 期刊論文 | Low Frequency Noise in Field-plate Multigate AlGaN/GaN Single-Pole-Single-Throw RF Switches on Silicon Substrate | Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, “Low Frequency Noise in Field-plate Multigate AlGaN/GaN Single-Pole-Single-Throw RF Switches on Silicon Substrate | Microelectronics Reliability |
| 2013- | 期刊論文 | Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design | Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang | Microelectronics Reliability |
| 2012-12 | 期刊論文 | “Quality of Oxidation Interface of AlGaN in Enhancement-mode AlGaN/GaN High-Electron-Mobility Transistors | Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, and Jia-Hsuan Wu, | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| 2012-11 | 期刊論文 | “A Gold-free Fully Copper Metalized AlGaN/GaN Power HEMTs on Si Substrate | Hsien-Chin Chiu, Chao-Wei Lin, , Hsuan-Ling Kao, Geng-Yen Lee, and Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, | MICROELECTRONICS RELIABILITY |
| 2012-11 | 期刊論文 | “High Thermal Stability and Low Hysteresis Dispersion AlGaN/GaN MOS-HEMTs with Zirconia Film Design | Chao-Hung Chen, Hsien-Chin Chiu*, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, | MICROELECTRONICS RELIABILITY |
| 2012-11 | 期刊論文 | “Investigation of Surface Pretreatments on GaAs and Memory Characteristics of MOS Capacitors embedded with Au nano-particles | Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai, | MICROELECTRONICS RELIABILITY |
| 2012-09 | 研討會論文 | High Breakdown Voltage and Low Thermal Effect Micromachined SOI AlGaN/GaN HEMTs | Chih-Wei Yang, Hsien-Chin Chiu, | |
| 2012-07 | 期刊論文 | Low Frequency Noise in Enhancement-mode GaN MOS-HEMTs by Using Stacked Al2O3/Ga2O3/Gd2O3 Gate Dielectric | Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang and Hsuan-Ling Kao, “ | IEEE ELECTRON DEVICE LETTERS |
| 2012-06 | 期刊論文 | Investigation on the thermal behavior of 0.15μm Gate-Length In0.4Al0.6As/In0.4Ga0.6As MHEMT | Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsuan-ling Kao, Feng-Tso Chien, | MICROELECTRONICS RELIABILITY |
| 2012-06 | 期刊論文 | The characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment | Chao-Hung Chen, Chih-Wei Yang, Hsien-Chin Chiu*, Jeffrey. S. Fu | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 2012-02 | 期刊論文 | “High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment” | Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu, and Kuang-Po Hsueh, | Electrochemical and Solid-State Letters |
| 2012-01 | 期刊論文 | “Novel GaAs Enhancement-Mode/Depletion-Mode pHEMTs Technology Using high-k Praseodymium Oxide Interlayer” | Chao-Hung Chen, Hsien-Chin Chiu*, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien, | MICROELECTRONICS RELIABILITY |
| 2011-11 | 期刊論文 | Characterization of Enhancement-mode AlGaN/GaN High Electron Mobility Transistor Using N2O Plasma Oxidation Technology | Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu and Feng-Tso Chien | Applied Physic Letter |
| 2011-09 | 期刊論文 | Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator | Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Chau-Wei Chiu, Jeffrey S. Fu, Kuang-Po Hsueh, and Feng-Tso Chien, | Electrochemical and Solid-State Letters |
| 2011-03 | 期刊論文 | High Performance 90nm Dual-Gate nMOSFETs with Field-Plate Technology | Jeffrey S. Fu, Hsien-Chin Chiu*, Po-Yu Ke, Ting-Huei Chen, Wu-Shiung Feng | IEEE Electron Device Letters |
| 2011-03 | 期刊論文 | High Performance AlGaN/GaN HEMT with Lattice Matched ZnO Gate Interlayer | Hsien-Chin Chiu*, Che-Kai Lin, Chao-Wei Lin, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu | Journal of the Electrochemical Society |
| 2010-12 | 期刊論文 | Harmonics Suppression Investigations of pHEMT Single Pole Single Throw Switches using Multi-gate Structures | Hsien-Chin Chiu*, Chia-Shih Cheng, Jeffrey S. Fu, Kuang-Po Hsueh | Microelectronic Engineering |
| 2010-08 | 期刊論文 | Optoelectronic Mixer based on Composite Transparent Gate InAlAs/InGaAs Metamorphic HEMTs | Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsiang-Chun Wang, Yi-Chun Wu | IEEE/OSA Journal of Lightwave Technology |
| 2010-03 | 期刊論文 | On-State and Off-State Breakdown Voltages in GaAs pHEMTs with Various Field-plate and Gate-recess Extension Structures | Hsien-Chin Chiu*, Chia-Shih Cheng | IEEE Electron Device Letter |
| 2010-02 | 期刊論文 | A Comparison Study of CMOS T/R Switches Using Gate/Source-terminated Field-Plate Transistors | Chien-Cheng Wei, Hsien-Chin Chiu*, Shao-Wei Lin, Ting-Huei Chen, Jeffrey S. Fu, Feng-Tso Chien, | Microelectronics Engineering |
| 2010-02 | 期刊論文 | A Wide Tuning Range 69 GHz Push-Push VCO using 0.18μm CMOS Technology | Hsien-Chin Chiu*, Chih-Pin Kao | IEEE Microwave and Wireless Components Letters |
| 2010-01 | 期刊論文 | Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs | Hsien-Chin Chiu*, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, R. M. Lin, K.P.Hsueh | Journal of the Electrochemical Society |
| 2009-12 | 期刊論文 | High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-gate Technology | Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu | Journal of Electrochemcial Society |
| 2009-07 | 期刊論文 | The Characteristics of Dual δ-Doped InGaP/InGaAs pHEMTs with Various Doping Profile | Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin | Journal of Electrochemical Society |
| 2009-04 | 期刊論文 | A High-linearity Single-Pole-Double-Throw Pseudomorphic HEMT Switch Based on Tunable Field-Plate Voltage Technology | Hsien-Chin Chiu, Chia-Shih Cheng, Shao-Wei Lin, Chien-Cheng Wei | IEEE Transaction on Electron Device |
| 2008-12 | 期刊論文 | Comprehensive Study of GaAs MOSFETs using Gadolinium Oxide and Praseodymium Oxide Layers | Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Liann-Be Chang | Journal of Electrochemical Society |
| 2008-11 | 期刊論文 | Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide Layer | 邱顯欽 | IEEE Trans. Electron Device |
| 2008-07 | 期刊論文 | Enhanced optical responsivity of InAlAs/InGaAs metamorphic HEMT using ITO transparent gate technology | 邱顯欽 | Applied Physic Letter |
| 2008-05 | 期刊論文 | Phase-Noise Improvement of GaAs pHEMT K-Band Voltage Controlled Oscillator Using Tunable Field-Plate Voltage Technology | 邱顯欽 | IEEE Electron Device Letter |
| 2008-03 | 期刊論文 | Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2Sx Pretreatment | 邱顯欽 | IEEE Transaction on Electron Device |
| 2008-01 | 期刊論文 | Power Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs | Hsien-Chin Chiu, Chung-Wen Chen, Yuan-Chang Huang | IEEE Trans. Electron Device |
| 2007-10 | 期刊論文 | A 12-GHz Low Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors | Chien-Cheng Wei, Hsien-Chin Chiu*, Wu-Shiung Feng | IEEE Trans. Electron Device |
| 2007-07 | 期刊論文 | A Low Noise 3.1 to 10.6 GHz pMOS Distributed Amplifier for Ultra-Wideband Applications | Chien-Cheng Wei, Hsien-Chin Chiu*, Wu-Shiung Feng | Microwave and Optical Technology Letter |
| 2007-05 | 期刊論文 | Compact K-band bandpass filter on high-k LiNbO3 substrate | Chia-Sung Wu, Hsing-Chung Liu, Zhi-Ping Liu, Hsien-Chin Chiu | Solid-State Electronics |
| 2007-03 | 期刊論文 | Barrier Height Enhancement of AlxGa1−xN/GaN Schottky Diodes Prepared by P2S5(NH4)2S Treatments | Liann-Be Chang, Chia-Hwa Chang, Ming-Jer Jeng, Hsien-Chin Chiu, and Hung-Fei Kuo | Electrochemical and Solid-State Lett |
| 2006-12 | 期刊論文 | Microwave Performance of AlGaAs/InGaAs Pseudomorphic HEMT with Tunable Field-Plate Voltage | 邱顯欽 | Semiconductor Science and Technology |
| 2006-10 | 期刊論文 | High Linearity Performance of 0.13 um CMOS devices using Field-Plate Technology | 魏建承,邱顯欽* | Electron Device Letter |
| 2006-10 | 期刊論文 | Improved Schottky Leakage Current of ln0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs Using (NH4)2Sx Treatment | 邱顯欽 | Electrochemical Solid State Letter |
| 2006-05 | 期刊論文 | Microwave Performance of (Al0.3Ga0.7)0.5In0.5P, In0.5Ga0.5P, Al0.28Ga0.72As Enhancement-mode Pseudomorphic HEMT with Succinic Acid Gate Recess Process | 邱顯欽 | Journal of the Electrochemical Society |
| 2006-03 | 期刊論文 | A Modified Angelov Model for InGaP/InGaAs Enhancement- and Depletion-Mode pHEMTs Using Symbolic Defined Device Technology | 邱顯欽 | Solid State Electronics |
| 2006-02 | 期刊論文 | High Uniformity (Al0.3Ga0.7)0.5In0.5P/ InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess | 邱顯欽 | Electrochemical Solid State letter |
| 2006-01 | 期刊論文 | High Uniformity Enhancement- and Depletion-Mode InGaP/InGaAs pHEMTs Using Selective Succinic Acid Gate Recess Process | 邱顯欽 | Semiconductor Science and Technology |
| 2005-12 | 期刊論文 | Device Performance Improvement of InGaP/InGaAs DCFETs | 簡鳳佐, 邱顯欽 | IEEE, Electron Device Lett |
| 2005-12 | 期刊論文 | Power and Linearity Comparisons of Gate- and Source-terminated Field-plate Pseudomorphic HEMTs | 邱顯欽 | Semiconductor Science and Technology |
| 2005-10 | 期刊論文 | High Breakdown Voltage (Al0.3Ga0.7)0.5In0.5P/ InGaAs Quasi Enhancement-Mode pHEMT with Field-Plate Technology | 邱顯欽 | IEEE, Electron Device Lett |
| 2005-08 | 期刊論文 | A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology | 邱顯欽 | Solid-State Electronics |
| 2004-05 | 期刊論文 | K-Band Monolithic InGaP/InGaAs DCFET Amplifier Using BCB Coplanar Waveguide Technology | 邱顯欽 | IEEE, Electron Device Letter |
| 2004-01 | 期刊論文 | The Microwave Power Performance Comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) Doped-Channel HFETs | 邱顯欽 | IEEE Trans. Electron Device |
| 2003-07 | 期刊論文 | 0.2 mm Gate-Length InGaP/InGaAs DCFET for C-Band MMIC Amplifier Applications | 邱顯欽 | IEEE Trans. Electron Device |
| 2003-06 | 期刊論文 | High Performance BCB-Bridged AlGaAs/InGaAs Power HFETs | 邱顯欽 | IEEE Trans. Electron Device |
| 2002-01 | 期刊論文 | Improved Device Linearity of AlGaAs/InGaAs HFETs By a Second Mesa Etching | 邱顯欽 | IEEE, Electron Device Letter |