Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation
Wan-Sin Chen, Keng-Yung Lin, Yen-Hsun Glen Lin, Hsien-Wen Wan, Lawrence Boyu Young, Chiu-Ping Cheng*, Tun-Wen Pi*, Jueinai Kwo*, Minghwei Hong*
ACS Appl. Electron. Mater.
2020-12
研討會論文
Surface electronic structure od strained Si1-xGex layers grown on Ge(001) and Si(001)
Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Chiu-Ping Cheng, Jueinai Kwo, Tu-Wen Pi, and Minghwei Hong
2020-08
期刊論文
Surface electronic structure of Si1−xGex(001)-2 × 1: a synchrotron radiation photoemission study
Yi-Ting Cheng, Hsien-Wen Wan, Chao-Kai Cheng, Chiu-Ping Cheng, Jueinai Kwo, Minghwei Hong, and Tun-Wen Pi
Applied Physics Express
2020-07
期刊論文
Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission
2. Yi-Ting Cheng, Hsien-Wen Wan, Chao-Kai Cheng, Chiu-Ping Cheng, Jueinai Kwo, Minghwei Hong, and Tun-Wen Pi
Applied Physics Express
2020-02
研討會論文
Electronic characteristics of (001), (110) and (111) epi-Ge surfaces and their oxidation using in-situ high-resolution synchrotron radiation photoemission
Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Tu-Wen Pi, Jueinai Kwo, and Minghwei Hong
2019-04
期刊論文
Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2×1 Studied by High-Resolution Synchrotron Radiation Photoemission
Atom-to-atom interaction of O2 with epi Ge(001)-2×1 in elucidating GeOx formation
Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei Hong and Tun-Wen Pi
Applied Physics Express
2018-09
研討會論文
A unique surface electronic structure of epi Ge(001)-2x1
Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), H. W. Wan (萬獻文), K. Y. Lin (林耕雍), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)
2018-09
研討會論文
ALD-Y2O3 on GaAs(001)-4×6 – an in-situ atomic-scale study of growth mechanism using synchrotron radiation photoemission
W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)
2018-09
研討會論文
MBE and multiple functions in-situ integrated via ultra-high vacuum
M. Hong (洪銘輝), J. Kwo (郭瑞年), K. H. M. Chen (陳可璇), Y. T. Fanchiang (范姜宇廷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), K. Y. Lin (林耕雍), W. S. Chen (陳婉馨), Y. T. Cheng (鄭伊婷), L. B. Young (楊博宇), C. C. Chen (陳俊嘉), T. W. Pi (皮敦文), C.-P. Cheng (鄭秋平)
2018-08
期刊論文
In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4 × 6 surface
Chiu-Ping Cheng*, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Keng-Yung Lin, Lawrence Boyu Young, Cheng-Yeh Yang, Tun-Wen Pi*, Jueinai Kwo* and Minghwei Hong*Chiu-Ping Cheng*, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Keng-Yung Lin, Lawrence Boyu Young, Cheng-Yeh Yang, Tun-Wen Pi*, Jueinai Kwo* and Minghwei Hong*
J. Phys. D: Appl. Phys.
2018-08
研討會論文
The growth mechanism of high- Y2O3 on GaAs(001) attained using in-situ cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy
C.-P. Cheng (鄭秋平), W. S. Chen (陳婉馨), Y. T. Cheng (鄭伊婷), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)
2018-02
期刊論文
Atomic nature of the growth mechanism of atomic layer deposited high‑κ Y2O3 on GaAs(001)‑4×6 based on in situ synchrotron radiation photoelectron spectroscopy
Elucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy
Yi-Ting Cheng, Wan-Sin Chen, Keng-Yung Lin, Lawrence Boyu Young, Yen-Hsun Lin, Hsien-Wen Wan, Tun-Wen Pi, Chiu-Ping Cheng, Raynien Kwo, and Minghwei Hong
2017-09
研討會論文
Interface Dipole of High k -Y2O3 on GaAs(001) Attained using Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy
Wan-Sin Chen, Keng-Yung Lin, Lawrence Boyu Young, Yi-Ting Cheng, Yen-Hsun Lin, Hsien-Wen Wan, Cheng-Yeh Yang, Chiu-Ping Cheng, Tun-Wen Pi, Raynien Kwo, and Minghwei Hong
2017-07
研討會論文
ALD-Y2O3/GaAs(001) having extremely high thermal stability at 900 °C and very low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2 gate dielectrics
Yen-Hsun Lin, Hsien-Wen Wan, Lawrence Boyu Young, Chao-Kai Cheng, Keng-Yung Lin, Yi-Ting Cheng, Wan-Sin Chen, Chiu-Ping Cheng, Tun-Wen Pi, Raynien Kwo, and Minghwei Hong
2017-07
研討會論文
Elucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy
Yi-Ting Cheng, Wan-Sin Chen, Keng-Yung Lin, Lawrence Boyu Young, Yen-Hsun Lin, Hsien-Wen Wan, Tun-Wen Pi, Chiu-Ping Cheng, Raynien Kwo, and Minghwei Hong
2017-07
研討會論文
Interface Dipole of High k -Y2O3 on GaAs(001) Attained using Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy
Wan-Sin Chen, Keng-Yung Lin, Lawrence Boyu Young, Yi-Ting Cheng, Yen-Hsun Lin, Hsien-Wen Wan, Cheng-Yeh Yang, Chiu-Ping Cheng, Tun-Wen Pi, Raynien Kwo, and Minghwei Hong
2017-06
期刊論文
Surface electronic structure of epi germanium (001)-2x1