| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2022-04 |
期刊論文
|
A Synchrotron Radiation Photoemission Study of SiGe(001)-2x1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan (萬憲文), Jueinai Kwo （郭瑞年), Minghwei Hong (洪銘輝) and Tun-Wen Pi (皮敦文) |
Nanomaterials
|
| 2021-10 |
期刊論文
|
Scavenging segregated Ge on thin single-crystal Si epitaxially grown on Ge |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Tien-Yu Chu (朱天宇), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
ACS Applied Electronic Materials
|
| 2021-08 |
期刊論文
|
Oxidation and hydrogenation of SiGe(001)-2x1 at room temperature and in situ annealing: A synchrotron radiation photoemission study |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
Applied Surface Science
|
| 2021-05 |
期刊論文
|
Low-temperature grown single-crystal Si epitaxially on Ge, followed by direct deposition of high-k dielectrics-attainment of low interfacial traps and highly reliable Ge MOS |
Hsien-Wen Wan(萬憲文), Yu-Jie Hong (洪毓傑), Yi-Ting Cheng (鄭伊婷), Chao-Kai Cheng (鄭兆凱), Chia-Hung Hsu (徐嘉鴻), Chien-Ting Wu (吳建霆), Tun-Wen Pi(皮敦文), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝) |
ACS Applied Electronic Materials
|
| 2020-09 |
期刊論文
|
Surface electronic structure of Si1-xGex(001)-2×1: A synchrotron radiation photoemission study |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Chao-Kai Cheng(鄭兆凱), Chiu-Ping Cheng(鄭秋平), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
Applied Physics Express
|
| 2020-08 |
期刊論文
|
Low-temperature grown single-crystal Si on epi Ge(001)-2×1 and its oxidation: Electronic structure study via synchrotron radiation photoemission |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Chao-Kai Cheng(鄭兆凱), Chiu-Ping Cheng(鄭秋平), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
Applied Physics Express
|
| 2019-04 |
期刊論文
|
Microscopic views of atomic and molecular oxygen bonding with epi Ge(001)-2×1 studied by high-resolution synchrotron radiation photoemission |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Chiu-Ping Cheng (鄭秋平), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
Nanomaterials
|
| 2019-02 |
期刊論文
|
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum |
K. Y. Lin, Y. H. Lin, H. W. Wan, Y. T. Fanchiang, W. S. Chen, L. B. Young, Y. T. Cheng, C. K. Cheng, K. H. M. Chen, C. C. Chen, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong |
Journal of Crystal Growth
|
| 2018-10 |
期刊論文
|
Atom-to-atom interaction of O2 with epi Ge(001)-2×1 in elucidating GeOx formation |
Yi-Ting Cheng (鄭伊婷), Hsien-Wen Wan(萬憲文), Chiu-Ping Cheng (鄭秋平), Jueinai Kwo(郭瑞年), Minghwei Hong(洪銘輝), and Tun-Wen Pi(皮敦文) |
Applied Physics Express
|
| 2018-08 |
期刊論文
|
In situ direct determination of band offset and surface dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(001)-4x6 surface |
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Keng-Yung Lin, Lawrence Boyu Young, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, and Minghwei Hong |
journal of Physics D: Applied Physics
|
| 2018-02 |
期刊論文
|
Atomic nature of the growth mechanism of atomic layer deposited high-k Y2O3 on GaAs(001)-4×6 based on in situ synchrotron radiation photoelectron spectroscopy |
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, and Minghwei Hong |
ACS Omega
|
| 2017-12 |
期刊論文
|
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition |
M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin, T. W. Pi, and J. Kwo |
Applied Physics Letters
|
| 2017-11 |
期刊論文
|
Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 -A comparative study |
M. Hong, H. W. Wan, P. Chang, T. D. Lin, Y. H. Chang, W. C. Lee, T. W. Pi, and J. Kwo |
Journal of Crystal Growth
|
| 2017-11 |
期刊論文
|
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 - In comparison with atomic layer deposited Al2O3 |
H. W. Wan, K. Y. Lin, C. K. Cheng, Y. K. Su, W. C. Lee, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong |
Journal of Crystal Growth
|
| 2017-11 |
期刊論文
|
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition |
Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi, J. Kwo, and M. Hong |
Journal of Crystal Growth
|
| 2017-07 |
期刊論文
|
Surface electronic structure of epi Germanium (001)-2×1 |
Yi-Ting Cheng, Yen-Hsun Lin, Wan-Sin Chen, Keng-Yung Lin, Hsien-Wen Wan, Chiu-Ping Cheng, Hung-Hsiang Cheng, Jueinai Kwo, Minghwei Hong, Tun-Wen Pi |
Applied Physics Express
|
| 2017-05 |
期刊論文
|
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance |
Tun-Wen Pi, Wan-Sin Chen, Yen-Hsun Lin, Yi-Ting Cheng, Guo-Jhen Wei, Keng-Yung Lin, Chiu-Ping Cheng, Jueinai Kwo, and Minghwei Hong |
Applied Physics Letters
|
| 2017-01 |
期刊論文
|
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study |
Chiu-Ping Cheng, Wan-Sin Chen, Keng-Yung Lin, Guo-Jhen Wei, Yi-Ting Cheng, Yen-Hsun Lin, Hsien-Wen Wan, Tun-Wen Pi, Raymond T. Tung, Jueinai Kwo, and Minghwei Hong |
Applied Surface Science
|
| 2015-12 |
期刊論文
|
Interfacial electronic structure of Na deposited on rubrene thin filmstudied by synchrotron radiation photoemission |
C. H. Wei, C. P. Cheng,* H. C. Lin, and T. W. Pi |
Applied Surface Science
|
| 2015-12 |
期刊論文
|
Reconstruction at the interface of one cycle of tri-methylaluminum and water on of GaAs(111)A-2x2 from atomic layer deposition |
T. Fanchiang, T. H. Chiang, T. W. Pi, G. K. Wertheim, J. Kwo, and M. Hong |
Applied Physics Express
|
| 2015-03 |
期刊論文
|
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures |
T. W. Pi, Y. H. Lin, Y. T. Fanchiang, T. H. Chiang, C. H. Wei, Y. C. Lin, G. K. Wertheim, J. Kwo, and M. Hong |
Nanotechnology
|
| 2015-01 |
期刊論文
|
Cesium doping at C60/rubrene heterointerfaces for improving the performance of organic light- and current-generating devices |
C. -P. Cheng, M. -H. Lu, Y. -Y. Chu, C. -H. Wei, and T. W. Pi |
Journal of Applied Physics
|
| 2014-05 |
期刊論文
|
Greatly improved interfacial passivation of in-situ high k dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) |
R. L. Chu, Y. C. Liu, W. C. Lee, T. D. Lin, M. L. Huang, T. W. Pi, J. Kwo, and M. Hong |
Applied Physics Letters
|
| 2014-04 |
期刊論文
|
Semiconductor-insulator interfaces– High k dielectrics on (In)GaAs |
T. W. Pi, T. D. Lin, W. H. Chang, Y. C. Chang, J. Kwo, and M. Hong |
Encyclopedia EEE
|
| 2014-01 |
期刊論文
|
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4x2 from atomic layer deposition |
T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M. Hong |
Applied Physics Letters
|
| 2014- |
期刊論文
|
(Invited) High k/InGaAs for ultimate CMOS – interfacial passivation, low ohmic contacts, and device performance |
W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong |
The Electrochemical Society Transaction
|
| 2013-11 |
期刊論文
|
Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3 - A Comparative Study |
R. L. Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, T. D. Lin, G. J. Brown, J. I. Chyi, T. W. Pi, J. Kwo, and M. Hong |
Applied Physics Express
|
| 2013-11 |
期刊論文
|
Tuning gap states at organic-metal interfaces via quantum size effects |
M. -K. Lin, Y. Nakayama, C. -H. Chen, C. -Y. Wang, H. -T. Jeng, T. W. Pi, H. Ishii, and S. -J. Tang |
Nature Communications
|
| 2013-08 |
期刊論文
|
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition |
T. W. Pi, H. Y. Lin, T. H. Chiang, Y. T. Liu, Y. C. Chang, T. D. Lin, G. K. Wertheim, J. Kwo, and M. Hong |
Applied Surface Science
|
| 2013-05 |
期刊論文
|
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4x2 surface: A high-resolution core-level photoemission study |
T. W. Pi, H. Y. Lin, T. H. Chiang, Y. T. Liu, G. K. Wertheim, J. Kwo, and M. Hong |
Journal of Applied Physics
|
| 2013-04 |
期刊論文
|
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4x6 and As-rich GaAs(001)-2x4 surfaces: A synchrotron-radiation photoemission study |
T. W. Pi, H. Y. Lin, Y. T. Liu, T. D. Lin, G. K. Wertheim, J. Kwo, and M. Hong |
Nanoscale Research Letters
|
| 2013-03 |
期刊論文
|
Electronic structures of pristine and potassium-doped rebrene thin films |
C. -P. Cheng, T. L. Li, C. -H. Kuo, and T.-W. Pi |
Organic Electronics
|
| 2012-11 |
期刊論文
|
Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4×6 surface with trimethylaluminum and water as precursors |
M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, G. K. Wertheim, T. W. Pi, M. Hong, and J. Kwo |
Applied Physics Letters
|
| 2012-10 |
期刊論文
|
Effective Passivation of In0.2Ga0.8As by HfO2 Surpassing Al2O3 via in-situ Atomic Layer Deposition |
Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, and M. Hong |
Applied Physics Letters
|
| 2012-10 |
期刊論文
|
Interfacial properties at the organic/metal interface probed using quantum-well states |
Meng-Kai Lin, Yasuo Nakayama, Chin-Yung Wang, Jer-Chia Hsu, Chih-Hao Pan, Shin-ichi Machida, Tun-Wen Pi, Hisao Ishii, and S.-J. Tang |
Physical Review B
|
| 2012-06 |
期刊論文
|
Improvements of electron injection efficiency using subphthalocyanine mixed with lithium fluoride in cathode structures of organic light emitting diodes |
Yu-Hung Chen, Yu-Jen Cheng, Guan-Ru Lee, Chih-I Wu, Tun-Wen Pi |
Organic Electronics
|
| 2012-04 |
期刊論文
|
Interface electronic structure of Zinc-Phthalocyanine on the siliver thin-film quantum-well |
Y. Nakayama, M.-K. Lin, C.-Y. Wang, T.-W. Pi, H. Ishii, and S.-J. Tang |
e-Journal of Surface Science Nanotechnology
|
| 2012-03 |
期刊論文
|
Spin-state transition in Ba2Co9O1 |
J.-G. Cheng, J.-S. Zhou,Z. Hu, M. R. Suchomel, Y. Y. Chin, C. Y. Kuo, H.-J. Lin, J. M. Chen, T.W. Pi, C. T. Chen, T. Takami, L. H. Tjeng, and J. B. Goodenough |
Physical Review B
|
| 2012- |
期刊論文
|
Electronic structure of RuSr2EuCu2O8 studied by x-ray absorption and photoemission spectroscopies |
S. W. Han, D. C. Ling, H. M. Tsai, C. H. Chuang, S. L. Wu, and W. F. Pong, J. W. Chiou, M.-H. Tsai, L. Y. Jang, H. J. Lin, T. W. Pi, and J. F. Le |
Physical Review B
|
| 2012- |
期刊論文
|
Surface-atom core-level shift in GaAs(111)A-2x2 |
T.-W. Pi, B. R. Chen, M. L. Huang, T. H. Chiang, G. K. Wertheim, M. Hong, and J. Kwo |
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
|
| 2011-12 |
期刊論文
|
Effect of K doping on CuPc:C60 heterojunction |
Chiu-Ping Cheng, Wen-Yen Chen, Ching-Hsuan Wei, and Tun-Wen Pi |
Journal of Applied Physics
|
| 2011-04 |
期刊論文
|
Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs |
Y.H. Chang, M.L. Huang, P. Chang, C.A. Lin, Y.J. Chu, B.R. Chen, C.L. Hsu, J. Kwo, T.W. Pi, M. Hong |
Microelectronic Engineering
|
| 2011-03 |
期刊論文
|
Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study |
T.-W. Pi*, W.C. Lee, M. L. Huang, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, Y. D. Wu , M. Hong*, and J. Kwo* |
Journal of Applied Physics
|
| 2011-02 |
期刊論文
|
High-resolution core-level photoemission study of CF4-treated Ga2O3(Gd2O3) gate dielectric on Ge probed by synchrotron radiation |
T. -W. Pi, M. L. Huang, W.C. Lee, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, M. Hong, and J. Kwo |
Applied Physics Letters
|
| 2011-02 |
期刊論文
|
High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation |
T.-W. Pi*, M. L. Huang, W.C. Lee, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, Y. D. Wu , M. Hong*, and J. Kwo* |
Applied Physics Letters
|
| 2011-02 |
期刊論文
|
The reaction of Si(001) with magnesium and calcium |
T. -W. Pi*, C. -P. Cheng, and G. K. Wertheim* |
Journal of Applied Physics
|
| 2010-09 |
期刊論文
|
Interface electronic structures of 2-amino-4,5-imidazoledicarbonitrile on Ag and Al surfaces |
Y. Nakayama, Y.-H. Huang, C.-H. Wei, T. Kubo, S. Machida, T.-W. Pi, S.-J. Tang, Y. Noguchi, and H. Ishii* |
Journal of Applied Physics
|
| 2009-12 |
期刊論文
|
Interfacial electronic structure of copper phthalocyanine on a gold surface studied by synchrotron radiation photoemission |
Tun-Wen Pi*, Guan-Ru Lee, Ching-Hsuan Wei, Wen-Yen Chen, Chiu-Ping Cheng |
Journal of Applied Physics
|
| 2009-09 |
期刊論文
|
Enhancement in current efficiency in organic light-emitting diodes with incorporation of subphthalocyanine |
Yu-Hung Chen, Jung-Hung Chang, Guan-Ru Lee, I-Wen Wu, Jheng-Hao Fang, Chih-I Wu, and Tun-Wen Pi |
Applied Physics Letters
|
| 2009-06 |
期刊論文
|
Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers |
ei-Hsin Chen, Yu-Hung Chen, Chang-Tin Lin, Guan-Ru Lee, Chih-I Wu, Dong-Seok Leem, Jang-Joo Kim, and Tun-Wen Pi |
Journal of Applied Physics
|
| 2009-05 |
期刊論文
|
Interfacial electronic structures of C60 molecules on a K-doped CuPc surface |
Chiu-Ping Cheng, Wen-Yen Chen, Ching-Hsuan Wei, Tun-Wen Pi |
Applied Physics Letters
|
| 2009-02 |
期刊論文
|
Electronic and Chemical Properties of Molybdenum Oxide Doped Hole Injection Layers in Organic Light Emitting Diodes |
Chih-I Wu, Chang-Ting Lin , Guan-Ru Li , Ting-Yi Cho , Chung-Chih Wu , Tun-Wen Pi |
Journal of Applied Physics
|
| 2008-07 |
期刊論文
|
Bond-cutting of Alq3 by the doped K atoms occurs at high K concentration in a K-doped Alq3 layer |
Hsin-Han Lee, Tun-Wen Pi, J. Hwang |
Journal of Synchrotron Radiation
|
| 2008-01 |
期刊論文
|
Bond cutting in Cs-doped tris(8-hydroxyquinoline) aluminum |
Hsin-Han Lee, J. Hwang, Tun-Wen Pi, Y.-C. Wang, W.-J. Lin, and C.-P. Cheng |
Journal of Synchrotron Radiation
|
| 2007-10 |
期刊論文
|
The Organic LED Surface: A Synchrotron Radiation Photoemission Study |
Tun-Wen Pi and T. C. Yu |
Surface Review and Letters
|
| 2007-04 |
期刊論文
|
Physical origin of the anomalous negative W 4f surface core-level shifts in the initial oxidation of submonolayer Ba on a W(110) surface |
I.-H. Hong, C.-P. Cheng, T.-W. Pi |
Physcial Review B
|
| 2007-03 |
研討會論文
|
High-resolution core level photoemission of Mg:Ag deposited on tris(8-hydroxyquinolato) aluminum probed by synchrotron radiation |
T.-W. Pi, H.-H. Lin, H.-H. Lee, and J. Hwang |
|
| 2007-02 |
期刊論文
|
Synchrotron radiation photoemission study of the Mg:Ag and tris(8-hydroxyquinolato) aluminum interface |
Tun-Wen Pi, Hsin-Han Lee, Hsiao-Hsuan Lin, J. Hwang |
Journal of Applied Physics
|
| 2007-02 |
期刊論文
|
The specific oxidation mechanism in the initial stages of O2 adsorption on submonolayer Ba covered W(110) surface |
Ie-Hong Hong, Chiu-Ping Cheng, Tun-Wen Pi |
Surface Science
|
| 2006-06 |
期刊論文
|
The surface electronic structure of Ca-doped tris(8-hydroxyquinolato) aluminum studied by synchrotron radiation photoemission |
T.-W. Pi, C.-H. Liu, and J. Hwang |
Journal of Applied Physics
|
| 2005-10 |
期刊論文
|
以同步輻射光電子發射技術來研究有機發光二極體介面之電子結構 |
皮敦文 |
物理雙月刊
|
| 2005-05 |
期刊論文
|
Electronic structure of tris(8-hydroxyquinolato) aluminum (Alq3) at room temperature and during annealing |
T.-W. Pi, T. C. Yu, C.-P. Ouyang, J.-F. Wen, and H. L. Hsu |
Physical Review B
|
| 2004-12 |
期刊論文
|
Surface electronic structure of Mg-doped tris(8-hydroxyquinolato) aluminum studied by synchrotron radiation photoemission |
T.-W. Pi, C.-P. Ouyang, T. C. Yu, H. L. Hsu, and J.-F. Wen |
Physical Review B
|
| 2004-08 |
期刊論文
|
The surface-charge polarization effect at an organic and inorganic contact: The case study of Alq3 on Si(001)-2x1 |
T.-W. Pi, C.-P. Ouyang, T. C. Yu, H. L. Hsu, J.-F. Wen, and J. Hwang |
Applied Physics Letters
|
| 2003-02 |
期刊論文
|
Photoemission study of CaF2 on Si(001)-2x1 during annealing |
T.-W. Pi, L.-C. Tien, J.-F. Wen, C.-P. Ouyang, C.-P. Cheng, and J. Hwang |
Solid State Communications
|
| 2002-08 |
期刊論文
|
Early nucleation on the Si(001)-2x1 surface |
T.-W. Pi, C.-P. Ouyang, J.-F. Wen, L.-C. Tien, J. Hwang, C.-P. Cheng, and G.K. Wertheim |
Surface Science
|
| 2001-08 |
期刊論文
|
Adsorption of Chlorine on the Si(001)-2x1 Surface |
T. -W. Pi, S.-F. Tsai, J. -F. Wen, and C. -P. Ouyang |
Surface Science
|
| 2001-05 |
期刊論文
|
Oxidation of Si(001)-2x1 |
T. -W. Pi, R. -T. Wu, J. -F. Wen, C. -P. Ouyang, and G. K. Wertheim |
Surface Science
|
| 2001-04 |
期刊論文
|
Surface core-level shifts of Ge(100)-2x1 |
T. -W. Pi, J. -F. Wen, C. -P. Ouyang, and R. -T. Wu |
Physical Review B
|
| 2000-08 |
期刊論文
|
Growth of Ge overlayer on Si(100)-2x1 |
T. -W. Pi, R. -T. Wu, C. -P. Ouyang, J. -F. Wen, and G. K. Wertheim |
Surface Science
|
| 2000-05 |
期刊論文
|
Surface Photoemission from Si(100) and Inelastic Electron Mean-Free-Path in Silicon |
T. -W. Pi, I. -H. Hong, C. -P. Cheng, and G. K. Wertheim |
Journal of Electron Spectroscopy and Related Phenomena
|
| 2000-02 |
期刊論文
|
光電子能譜研究在材料方面之應用 |
皮敦文 |
科學發展月刊
|
| 1998-11 |
期刊論文
|
Si 2p core level spectroscopy in Si(001)2x1: The charge-transfer effect |
Tun-Wen Pi, Chiu-Ping Cheng, and Ie-Hong Hong |
Surface Science
|
| 1998-10 |
期刊論文
|
A potassium doped m thick C60 film: Direct observations of threshold doping and phases evolution |
Tun-Wen Pi, Chiu-Ping Cheng, Ie-Hong Hong, and Rong-Tzong Wu文 |
Solid State Communications
|
| 1998-08 |
期刊論文
|
Synchrotron radiation photoemission Study of Ba on W(110) |
T.-W. Pi, I.-H Hong, and C.-P. Cheng |
Physical Review B
|
| 1998-08 |
期刊論文
|
Synchrotron radiation photoemission study of Ba on Si(001)2x1 Surface |
Chiu-Ping Cheng, Ie-Hong Hong, and Tun-Wen Pi, |
Physical Review B
|
| 1998-02 |
期刊論文
|
Photoemission study of K doping on a monolayer of C60 on clean Si(001)-2x1 surface |
Tun-Wen Pi, Chiu-Ping Cheng, Ie-Hong Hong, May-Ho Ke, and Rong-Tzong Wu |
Surface Review and Letters
|
| 1997-10 |
期刊論文
|
Valence-band photoemission study of (Ba, Cs) on W(110) surface |
Tun-Wen Pi, Chiu-Ping Cheng, Ie-Hong Hong, and Rong-Tzong Wu |
Surface Review and Letters
|
| 1995-06 |
期刊論文
|
Photoemission study of potassium on Si-based semiconductors: a-Si:H, a-Si, and c-Si(100) |
Tun-Wen Pi, Rong-Tzong Wu, and Chiu-Ping Cheng |
Journal of Applied Physics
|
| 1995-06 |
期刊論文
|
Photoemission study of potassium on Si-based semiconductors: a-Si:H, a-Si, and c-Si(100) |
Tun-Wen Pi, Rong-Tzong Wu, and Chiu-Ping Cheng |
Journal of Applied Physics
|
| 1993-10 |
期刊論文
|
Photoemission study of Cs on a-Si:H |
Tun-Wen Pi, Rong-Tzong Wu, and Chiu-Ping Cheng |
Solid State Communications
|
| 1992-12 |
其他
|
核心層電子光譜簡介 |
皮敦文 |
|
專利