學術研發服務網

:::

研究人才詳細資料

出版年月	著作類別	著作名稱	作者	收錄出處
2021-08	期刊論文	Effect of hydrogen implantation on low-temperature activation of boron in silicon	J. C. Lin, B. W. Lee, R. D. Chang*, C. M Chu, and W. Y. Woon	Nuclear Instruments and Methods in Physics Research Section B
2020-08	期刊論文	Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold	Ruey-Dar Chang, Jui-Chang Lin, and Bo-Wen Lee	Japanese Journal of Applied Physics
2019-05	期刊論文	Deactivation of phosphorus by carbon in recrystallized silicon	H. C. Liao, J. C. Lin, and R. D. Chang	ECS J. Solid State Sci. Technol.
2018-07	期刊論文	Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon	Hsueh-Chun Liao, Jui-Chang Lin, and Ruey-Dar Chang	Japanese Journal of Applied Physics
2017-06	期刊論文	Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions	Ruey-Dar Chang, Hsueh-Chun Liao, Chih-Ming Tai	Vacuum
2016-02	期刊論文	Activation and deactivation of phosphorus in silicon-on-insulator substrates	Ruey-Dar Chang, Chih-Hung Lin	Materials Science in Semiconductor Processing
2015-10	期刊論文	Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation	Kuan-Kan Hu, Ruey-Dar Chang, Wei Yen Woon	AIP Advances
2015-08	期刊論文	Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation	Ruey-Dar Chang∗, Yu-Ting Ling, Wan-Ting Su	Applied Surface Science
2015-02	期刊論文	Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles	Jer-Chyi Wang, Chin-Hsiang Liao, Chih-Ting Lin, Ruey-Dar Chang, Li-Chun Chang, Chih-I Wu, Jung-Hung Chang	Current Applied Physics
2015-01	期刊論文	Indium penetration through thermally grown silicon oxide	Ruey-Dar Chang, Hsin-Jen Wang	Vacuum
2014-06	研討會論文	Phosphorus redistribution caused by electrical deactivation of phosphorus at low temperatures	Ruey-Dar Chang, Chih-Hung Lin, Hong Lu, and Zhimin Wan
2014-01	期刊論文	Deactivation of phosphorus in silicon due to implanted nitrogen	Ruey-Dar Chang and Chih-Hung Lin	Phys. Status Solidi C
2013-10	期刊論文	Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire	Ko-Hui Lee, Jung-Ruey Tsai, Ruey-Dar Chang, Horng-Chih Lin,and Tiao-Yuan Huang	APPLIED PHYSICS LETTERS
2013-09	期刊論文	Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology	Chia-Ming Yang, Jer-Chyi Wang, Wei-Ping Lee, Chien-Chi Lee, Chih-Hung Lin, Chung Yuan Lee, Jo-Hui Lin, Hsin-Huei Chen, Chih-Yuan Hsiao, Ruey-Dar Chang, and Chao-Sung Lai	IEEE Electron Device Letters
2013-08	期刊論文	Effect of implantation damage on transient loss of phosphorus in silicon	Ruey-Dar Chang and Jung-Ruey Tsai	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2013-02	研討會論文	Surface Potential Redistribution in Laterally Diffused Field Effect Transistors	Hsueh-Chun Liao, Yeh-Wei Wu, Ruey-Dar Chang and Jung-Ruey Tsai
2012-06	研討會論文	Differential Hall analysis of ultrashallow carrier profiles using X-ray photoelectron spectroscopy for nanometer depth resolution	Y. T. Ling, W. T. Su, T. W. Pi and R. D. Chang*
2012-05	期刊論文	Modeling of phosphorus deactivation in polysilicon for simulation of memory process in nanometer era	R. D. Chang*, C. H. Lin, C. C. Ma, and J. R. Tsai	SOLID-STATE ELECTRONICS
2012-04	期刊論文	Codiffusion of phosphorus and carbon in preamorphized ultrashallow junctions	Y. T. Ling, M. J. Huang, R. D. Chang*, and L. Pelaz	ELECTROCHEMICAL AND SOLID STATE LETTERS
2011-09	期刊論文	Experimental and simulation studies of solid-phase crystallization of fluorine-implanted amorphous silicon on silicon dioxide	C. C. Ma, F. H. Hsieh, Y. W. Wu, and R. D. Chang*	Jpn. J. Appl. Phys.
2011-07	研討會論文	Modeling of phosphorus deactivation in polysilicon for optimization of memory process in nanometer era	R. D. Chang*, C. C. Ma , C. H. Lin, and J. R. Tsai
2011-04	期刊論文	Improvement in Junction Breakdown and GIDL using MFLA in DRAM Product	S. J. Lin, C. S. Lai, S. T. Chen, Y. J. Chan, R. D. Chang, W. C. Wang, B. Huang, N. T. Shih, G. Chuang, C. Y. Lee, and P. -I. Lee	J. Electrochem. Soc.
2010-10	期刊論文	Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates	R. D. Chang*, C. C. Ma and J. R. Tsai	J. Vac. Sci. Technol. B.
2009-05	期刊論文	Diffusion of indium implanted in silicon oxides	R. D. Chang*, Y. T. Ling, T. Liu, J. R. Tsai, and C. C. Ma	Jpn. J. Appl. Phys.
2009-05	期刊論文	Effects of minority-carrier response behavior on Ge MOS capacitor characteristics: Experimental measurements and theoretical simulations	C. C. Cheng, C. H. Chien, G. L. Luo, Y. T. Ling, R. D. Chang, C. C. Kei, C. N. Hsiao, J. C. Liu, and C. Y. Chang	IEEE TRANSACTIONS ON ELECTRON DEVICES
2008-12	期刊論文	Diffusion of boron near projected ranges of B and BF2 ions implanted in silicon	R. D. Chang*, C. H. Lin, and L. W. Ho	Jpn. J. Appl. Phys.
2008-03	期刊論文	Loss of phosphorus due to interface segregation at Si/SiO2 interfaces: Experiment and modeling	R. D. Chang* and J. R. Tsai	J. Appl. Phys.
2007-07	期刊論文	Transient dose loss of phosphorus during postimplantation annealing at 800 C	J. R. Tsai, L. W. Ho, and R. D. Chang*	Jpn. J. Appl. Phys.
2006-05	期刊論文	Elucidating the mechanism of transient loss of phosphorus due to interface segregation	R. D. Chang*, J. R. Tsai, and L. W. Ho	Appl. Phys. Lett.
2004-12	研討會論文	Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface	張睿達 and J. R. Tsai, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, H. C. Lin, J. P. Lin, W. S. Feng
2002-11	研討會論文	Analysis and simulation of solid phase recrystallization of implanted amorphous silicon films	張睿達 and F. H. Hsieh, C. C. Ma, H. C. Lin, C. S. Lai
2002-03	期刊論文	Time dependence of phosphorus diffusion and dose Loss during postimplantation annealing at low temperatures	張睿達 and P. S. Choi, D. L. Kwong, M. Gardner and P. K. Chu	Jpn. J. Appl. Phys
2000-11	期刊論文	Observation of Transient Enhanced Diffusion in B-Implanted Si by Buried Boron Isotopes	張睿達 and H. P. Chiang, H. W. Liu, L. W. Ho, P. C. Chiang, J. R. Tsai, J. P. Lin	Jpn. J. Appl. Phys.