| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2023-09 |
研討會論文
|
A Thin TiNx Layer on Pt Electrode Based Hf0.33Zr0.66O2 Ferroelectric Memory |
A. Senapati, Z.-F. Lou, F.-S. Chang, Y.-R. Chen, Y.-P. Chen, S.-Y. Huang, S. Maikap, C.-W. Liu, and M.-H. Lee |
|
| 2023-09 |
研討會論文
|
Novel WNx/C Interfacial Layer on Hf0.5Zr0.5O2 Ferroelectric Memory |
A. Aich, A. Senapati, Z.-F. Lou, F.-S. Chang, Y.-R. Chen, Y.-P. Chen, S.-Y. Huang, S. Maikap, C.-W. Liu, and M.-H. Lee |
|
| 2023-06 |
研討會論文
|
Impact of Si-Based Interfacial Layer for Ferroelectric Memory |
S. Maikap, A. Senapati, Z.-F. Lou and M.-H. Lee |
|
| 2022-12 |
研討會論文
|
Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM |
C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu , S. Maikap, and M. H. Lee |
|
| 2022-10 |
研討會論文
|
Ferroelectric Memory Characteristics of Stable La:HfO2 Film Deposited on Hf0.5Zr0.5O2/TiN Substrate |
A. Senapati, S. Maikap, C- Y. Lin, C-Y Liao, and M- H. Lee |
|
| 2022-10 |
研討會論文
|
Ferroelectric Memory Characteristics with Long Endurance of Novel La:HfO2 Film at Elevated Annealing Temperature |
S. Maikap, A. Senapati, Y- L. Shen, S. Das, C- Y. Lin, C- Y. Liao, and M- H. Lee |
|
| 2022-10 |
研討會論文
|
Ferroelectric and Anti-ferroelectric Characteristics by Using WNx Layer at the Ru/Hf0.33Zr0.66O2 Interface |
A. Aich, A. Senapati, S. Maikap, C- Y. Lin, C- Y. Liao, and M- H. Lee |
|
| 2022-10 |
研討會論文
|
Novel SiNx thin-layer treated on HZO film for ferroelectric memory and ferroelectric-tunnel-junction applications |
R. Karmakar, A. Senapati, C- Y. Lin, C- Y. Liao, S. Maikap and M- H. Lee |
|
| 2022-09 |
期刊論文
|
Robust resistive switching characteristics of AlOx CBRAM using simple and
cost-effective thermal evaporation process |
A. Deogaonkar, M. Seal, A. Senapati, S. Ginnaram, A. Ranjan, S. Maikap, and N. Raghavan |
Microelectronics Reliability
|
| 2022-09 |
期刊論文
|
Ruthenium based RRAM for low variability switching and scaling for
contemporary computing systems |
M. Seal, A. Deogaonkar, A. Senapati, S. Maikap, and N. Raghavan |
Microelectronics Reliability
|
| 2022-09 |
研討會論文
|
Improved Ferroelectric Memory Characteristics by Using TiNx in Novel Ru/TiNx/Hf0.5Zr0.5O2/TiN Capacitor |
A. Senapati, S. Maikap, C- Y. Lin, C- Y. Liao, and M- H. Lee |
|
| 2022-01 |
期刊論文
|
Performance improvement in E-Gun deposited SiOx- based RRAM device by switching material thickness reduction
|
S. Roy and S. Maikap |
Journal of Physics: Conference Series
|
| 2021-12 |
期刊論文
|
Dopamine sensing characteristics and mechanism by using N2/O2 annealing in Pt/Ti/n-Si structure |
Y.-P. Chen, A. Roy, P.-H. Wu, S.-Y. Huang, and S. Maikap |
Electronics
|
| 2021-11 |
研討會論文
|
Evaluation of FE behavior in Pt/TiN/HZO/p-Si MFS and Pt/TiN/HZO/TiN MFM structure for future logic/memory devices |
A. Senapati, S. Maikap, A. Aich, C.-Y. Lin, C.-Y. Liao, and M.-H. Lee |
|
| 2021-11 |
研討會論文
|
Ferroelectric memory characteristics using Pt electrode in Pt/Hf0.33Zr0.66O2/TiN structure |
S. Maikap, A. Senapati, A. Aich, C.-Y. Lin, C.-Y. Liao, and M.-H. Lee |
|
| 2021-10 |
研討會論文
|
Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction |
S. Roy and S. Maikap |
|
| 2021-01 |
期刊論文
|
Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory |
S Ginnaram and S Maikap |
Journal of Physics and Chemistry of Solids
|
| 2020-12 |
研討會論文
|
Neuromorphic characteristics of MoS2-based CBRAM using thin Ti layer for future artificial intelligence applications |
S. Maikap, S. Ginnaram, M. Seal, and A. Senapati |
|
| 2020-10 |
研討會論文
|
HfOx Based Ni/HfOx/TiN Memristor for Neuromorphic Application |
A. Aich, S. Ginnaram, A. Senapati, M. Seal and Si. Maikap |
|
| 2020-10 |
研討會論文
|
Low Current Switching and Artificial Synapse Characteristics Using Ta Interfacial Layer on MoS2 Based CBRAM |
S. Maikap, A. Senapati, and M. Dutta |
|
| 2020-10 |
研討會論文
|
MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application |
A Senapati, S Ginnaram, M Dutta, and S Maikap |
|
| 2020-10 |
研討會論文
|
Platinum membrane on Ti/n-Si substrate for dopamine detection |
A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu |
|
| 2020-10 |
研討會論文
|
Thermally Deposited AlOx Switching Layer in Al/Cu/AlOx/TiN Memristor for Neuromorphic Application |
S. Maikap, A. Deogaonkar, S. Ginnaram, A. Senapati, S. Yilin and N. Raghavan |
|
| 2020-08 |
期刊論文
|
Switching Characteristics andMechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor |
C. F. Chiu , S. Ginnaram , A. Senapati , Y. P. Chen and S. Maikap |
Electronics
|
| 2020-07 |
期刊論文
|
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM |
A. Senapati, S. Roy, Y. F. Lin, M. Dutta and S. Maikap |
Electronics
|
| 2020-06 |
研討會論文
|
Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation |
S. Maikap and A. Senapati |
|
| 2020-05 |
期刊論文
|
In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices |
S. Maikap and W. Banerjee |
Advanced Electronic Materials
|
| 2020-05 |
期刊論文
|
Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte−Insulator−Nanowire Structure |
A. Roy, Y. P. Chen, J. T. Qiu, and S. Maikap |
Analytical Chemistry
|
| 2020-03 |
期刊論文
|
Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a‑COx‑Based Conductive Bridge Random Access Memory |
S. Ginnaram, J. T. Qiu, and S. Maikap |
ACS Omega
|
| 2020-03 |
期刊論文
|
Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points |
M. Dutta, A. Senapati, S. Ginnaram, and S. Maikap |
Vacuum
|
| 2020-03 |
期刊論文
|
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application
|
S. Ginnaram, J. T. Qiu, and S. Maikap |
IEEE Electron Device Letters
|
| 2019-12 |
研討會論文
|
Interface Engineering in Conductive Bridge RAM for Future Non-volatile Memory and Artificial Synapse Applications |
S. Maikap |
|
| 2019-11 |
期刊論文
|
Sensing characteristics of dopamine using Pt/n-Si structure |
A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu |
Vacuum
|
| 2019-10 |
研討會論文
|
Cross point Memory and Neuromorphic Characteri stics by Using Cu Redox Mechanism in Ti/MoS2 based CBRAM device |
S. Maikap, S. Ginnaram, A. Senapati, and M. Dutta |
|
| 2019-10 |
研討會論文
|
Dopamine sensing characteristics by using Ru/SiO2/n-Si structure |
A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu |
|
| 2019-10 |
研討會論文
|
Improved resistive switching and neuromorphic phenomena by using Hf as an interfacial layer in MoS2 based CBRAM device |
S. Ginnaram and S. Maikap |
|
| 2019-10 |
研討會論文
|
Improving switching uniformity and neuromorphic characteristics by incorporating Ti buffer layer in Cu/Ti/MoS2/TiN structure |
M. Dutta, M. Seal, A. Senapati, P.-H. Hsu and S. Maikap |
|
| 2019-10 |
研討會論文
|
Porous Ir buffer layer and electrochemical reaction on Cu controlling based resistive switching memory device |
M. Dutta, A. Deogaonkar, S. Ginnaram, A. Senapati, S. Ankit and S. Maikap |
|
| 2019-10 |
研討會論文
|
Resistive switching and dopamine sensing by using Ir top electrode on TaOx based memory platform |
S. Maikap, A. Senapati, A. Aich and S. Samanta |
|
| 2019-06 |
研討會論文
|
Impact of Ti Interfacial Layer in Cu/Ti/MoS2/TiN Conductive Bridging Resistive Switching Memory for Neuromorphic Application |
S. Maikap, A. Roy, and M. Dutta |
|
| 2019-06 |
研討會論文
|
Sensing of dopamine using a thin porous iridium layer on Si substrate |
A. Roy and S. Maikap |
|
| 2019-03 |
期刊論文
|
Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices |
S. Maji, S. Samanta, P. Das, S. Maikap, V. R. Dhanak, I. Z. Mitrovic, and R. Mahapatra |
J. Vac. Sci. Technol. B
|
| 2019-02 |
期刊論文
|
Controlling resistive switching by using an optimized MoS2 interfacial layer and the role of top electrodes on ascorbic acid sensing in TaOx‑based RRAM |
J. T. Qiu, S. Samanta, M. Dutta,, S. Ginnaram, and S. Maikap |
Langmuir
|
| 2018-12 |
期刊論文
|
Controlling conductive filament and tributyrin sensing using an optimized porous iridium interfacial layer in Cu/Ir/TiNxOy/TiN |
M. Dutta, S. Maikap and J. T. Qiu |
Advanced Electronic Materials
|
| 2018-11 |
研討會論文
|
HfOx-based resistive random access memory for neuromorphic application |
S. Jana, S. Maikap, M. Dutta and J. T. Qiu |
|
| 2018-11 |
研討會論文
|
Investigation of Ni/HfOx/TiN resistive switching memory for neuromorphic applications |
S. Ginnaram and S. Maikap |
|
| 2018-11 |
研討會論文
|
Resistive switching and neuromorphic evaluation of novel Cu/Ti(Mo)/MoS2/TiN structure |
M. Dutta and S. Maikap |
|
| 2018-11 |
研討會論文
|
Sensing characteristics of dopamine by using Pt/n-Si Schottky diode |
S. Maikap, A. Roy and J. T. Qiu |
|
| 2018-09 |
研討會論文
|
Cross-point resistive switching and glucose sensing by using porous Ir electrode in Ir/SiOx/W memory platform |
S. Jana, M. Dutta and S. Maikap |
|
| 2018-06 |
研討會論文
|
Resistive switching memory and biosensing characteristics by using novel Ni/TiNxOy/TiN structure |
S. Ginnaram and S. Maikap |
|
| 2018-05 |
研討會論文
|
Cu Filament Based Resistive Switching and Oxidation Reduction through Dopamine Sensing in Novel Cu/MoS2/TiN Structure |
M. Dutta, S. Ginnaram, A. Roy and S. Maikap |
|
| 2018-04 |
研討會論文
|
Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection |
S. Jana, S. Samanta, S. Roy, J. T. Qiu and S. Maikap |
|
| 2018-04 |
研討會論文
|
Prostate cancer biomarker detection by using Si nanowire based electrolyte/NiOx/SiO2/n-Si sensors |
A. Roy, J. T. Qiu, S. Maikap |
|
| 2017-12 |
研討會論文
|
Al2O3 based resistive switching random access memory for H2O2/glucose sensing |
Siddheswar Maikap |
|
| 2017-12 |
研討會論文
|
Antiparallel and negative voltage dependent multi –level resistive switching characteristics by using Al interfacial layer in Cu/Al/a-COx/TiN structure |
S. Ginnaram, S. Chakrabarti and S. Maikap |
|
| 2017-11 |
研討會論文
|
Bias Modulated Resistive Switching Phenomena and Dopamine Sensing by Using Novel IrOx/Al2O3/TaOx/TiN Structure |
S. Samanta, A. Roy, S. Jana and S. Maikap |
|
| 2017-11 |
研討會論文
|
Detection of H2O2/Sarcosine as a prostate cancer bio marker by using HfOx membrane in electrolyte-insulator-semiconductor structure |
S. Jana, M. Dutta, G. Sreekanth and S. Maikap |
|
| 2017-11 |
研討會論文
|
IrOx nanostructures on SiO2/Si nanowire field-effect-transistor improved pH and breast cancer bio marker detection |
S. Maikap, S. Jana and P. Kumar |
|
| 2017-11 |
研討會論文
|
Multifunctional characteristics of porous Ir thin layer for conductive bridging memory and tributyrine detection |
M. Dutta, A. Roy, S. Jana and S. Maikap |
|
| 2017-11 |
研討會論文
|
NiOx nanolayer on chemical etched Si nanowire field-effect-transistor for prostate and lung cancer bio marker detection |
S. Maikap, A. Roy, S. Samanta and J. T. Qiu |
|
| 2017-11 |
研討會論文
|
Non-enzymatic uric acid detection by using silicon oxide electrolyte insulator nanowire structure |
A. Roy, S. Chakrabarti, S. Maikap |
|
| 2017-10 |
期刊論文
|
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure |
S. Chakrabarti, R. Panja, S. Roy, A. Roy, S. Samanta, M. Dutta, S. Ginnaram, S. Maikap, H. M. Cheng, L.. N. Tsai, Y. L. Chang, R. Mahapatra, D. Jana, J. T. Qiu, J. R. Yang |
Applied Surface Science
|
| 2017-09 |
期刊論文
|
Effects of W/Ir top electrode on resistive switching and dopamine sensing by using optimized TaOx-based memory platform |
Subhranu Samanta, Siddheswar Maikap, Anisha Roy, Surajit Jana, and Jian-Tai Qiu |
Advanced Materials Interfaces
|
| 2017-09 |
期刊論文
|
Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure |
Somsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta,
Surajit Jana, Anisha Roy and Jian-Tai Qiu |
Phys. Chem. Chem. Phys.
|
| 2017-09 |
期刊論文
|
Understanding of multi-level resistive switching mechanism in GeOxthrough redox reaction in H2O2/sarcosine prostate cancer biomarker detection |
Subhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, Surajit Jana, Somsubhra
Chakrabarti, Rajeswar Panja, Sourav Roy, Mrinmoy Dutta, Sreekanth Ginnaram, Amit
Prakash, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Jian-Tai Qiu & Samit K.
Ray |
Scientific Reports
|
| 2017-09 |
研討會論文
|
Formation-free multilevel resistive switching through redox reaction in H2O2/prostate cancer biomarker detection using GeOx insulating oxide |
S. Samanta, A. Roy, S. Jana and S. Maikap |
|
| 2017-09 |
研討會論文
|
Improved switching performance of the Cu/Ir/TiNxOy/TiN structure by introducing Ir buffer layer |
M. Dutta, S. Maikap |
|
| 2017-09 |
研討會論文
|
Resistive switching of oxygen incorporated amorphous carbon (a-COx) and understanding the mechanism through pH/H2O2 sensing |
S. Ginnaram, A. Roy, S. Jana and S. Maikap |
|
| 2017-09 |
研討會論文
|
Sarcosine as prostate cancer biomarker detection through H2O2 sensing by using nickel-oxide on Si nanowires |
A. Roy, S. Jana, J.-T. Qiu and S. Maikap |
|
| 2017-09 |
研討會論文
|
pH sensitivity and low concentration detection of urea/H¬2O2 by using IrOx/HfOx membrane in electrolyte-insulator-semiconductor structure |
S. Jana, A. Roy, J.-T. Qiu and S. Maikap |
|
| 2017-07 |
期刊論文
|
Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode |
Sourav Roy, Anisha Roy, Rajeswar Panja, Subhranu Samanta,
Somsubhra Chakrabarti, Po-Lin Yu, Siddheswar Maikap, Hsin-Ming Cheng,
Ling-Na Tsai, Jian-Tai Qiu |
Journal of Allows and Compounds
|
| 2017-07 |
期刊論文
|
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism |
Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh,
Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, Hsin-Ming Cheng,
Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra & Jer-Ren Yang |
Scientific Reports
|
| 2017-07 |
研討會論文
|
Detection of pH/H2O2 and prostate/breast cancer biomarker by using nickel oxide /iridium oxide sensing membrane in electrolyte-insulator-semiconductor structure |
S.Maikap |
|
| 2017-03 |
研討會論文
|
Chemical Etched Si Nanowires and Porous IrOx/NiOx Membrane for uric acid, LOXL2 Breast cancer, and Prostate Cancer Biomarker Detections |
S. Maikap |
|
| 2017-02 |
期刊論文
|
Cross-Point Resistive Switching Memory and Urea Sensing by
Using Annealed GdOx Film in IrOx/GdOx/W Structure for
Biomedical Applications |
P. Kumar, S. Maikap, S. Ginnaram, J.-T. Qiu, D. Jana, S. Chakrabarti, S. Samanta, K. Singh, A. Roy, S. Jana, M. Dutta, Y.-L. Chang, H.-M. Cheng, R. Mahapatra, H.-C. Chiu, and J.-R. Yang |
Journal of the Electrochemical Society
|
| 2016-11 |
研討會論文
|
Detection of pH and H2O2 sensing by using CdSe/ZnS nanoparticle in electrolyte –insulator-semiconductor structure |
P. Kumar, S. Jana, K. Singh, A. Roy, and S. Maikap |
|
| 2016-11 |
研討會論文
|
Incorporation of Hf layer at the W/HfO2 interface for improving resistive switching memory characteristics |
M. Dutta, S. Maji, S. Samanta, G. Sreekanth, S. Roy, R. Panja, S. Chakrabarti, R. Mahapatra and S. Maikap |
|
| 2016-11 |
研討會論文
|
Study of resistive switching characteristics in Cu/a-C/TiN structure |
G. Sreekanth, S. Samanta, M. Dutta, S. Chakrabarti, D. Jana and S. Maikap |
|
| 2016-11 |
研討會論文
|
Uric acid sensing by using silicon nanowires in electrolyte –insulator-semiconductor structure |
A. Roy, P. Kumar, K. Singh, S. Jana and S. Maikap |
|
| 2016-10 |
研討會論文
|
Invited talk |
S. Maikap |
|
| 2016-10 |
研討會論文
|
Resistive switching memory arrays and its medical applications |
S. Maikap |
|
| 2016-09 |
期刊論文
|
Detection of pH and enzyme free H2O2 sensing mechanism by using GdOx membrane in electrolyte insulator semiconductor structure |
P. Kumar, S. Maikap, J. T. Qiu, S. Jana, A. Roy, K. Singh, H. M. Cheng, M. T. Chang, R. Mahapatra, H. C. Chiu, and J. R. Yang
|
Nanoscale Research Letters
|
| 2016-09 |
期刊論文
|
Highly reliable label free detection of urea/glucose and sensing mechanism using SiO2 and CdSe/ZnS nanoparticles in electrolyte insulator semiconductor structure |
P. Kumar, S. Maikap, K. Singh, S. Chatterjee, Y. Y. Chen, H. M. Cheng, R. Mahapatra, J. T. Qiu, and J. R. Yang |
Journal of The Electrochemical Society
|
| 2016-07 |
期刊論文
|
Temperature dependent non linear resistive switching characteristics and mechanism using a new W/WO3/WOx/W structure |
S. Chakrabarti, S. Samanta, S. Maikap, S. Z. Rahaman, and H. M. Cheng |
Nanoscale Research Letters
|
| 2016-01 |
期刊論文
|
Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure |
D. Jana, S. Samanta, S. Maikap, and H. M. Cheng |
Applied Physics Letters
|
| 2016-01 |
研討會論文
|
IrOx nanostructure for controlling resistive switching memory and breast cancer detection |
M. Dutta, P. Kumar, G. Sreekanth, and S. Maikap |
|
| 2015-12 |
研討會論文
|
Breast cancer detection using iridium -oxide/SiO2/Si capacitor |
P. Kumar and S. Maikap |
|
| 2015-12 |
研討會論文
|
Cross-point resistive switching memory devices for bio medical applications”, 1 |
S. Maikap, P. Kumar, G. Sreekanth, S. Samanta, S. Chakrabarti, and D. Jana |
|
| 2015-11 |
研討會論文
|
CMOS compatible SiO2 membrane for enzyme based acetylcholine sensing |
K. Singh, P. Kumar, S. Chatterjee, and S. Maikap |
|
| 2015-11 |
研討會論文
|
Comparison of SiO2 and Cu/SiO2 based sensors for detection of tributyrin |
S. Chatterjee, P. Kumar, K. Singh, and S. Maikap |
|
| 2015-11 |
研討會論文
|
Observation of cone shaped silicon nanowires by chemical etching method |
A. Roy, S. Chakrabarti, and S. Maikap |
|
| 2015-11 |
研討會論文
|
Resistive switching characteristics using a new Cr/BaTiO3/ TiN structure |
Zongyi Wu, S. Samanta, D. Jana, S. Maikap |
|
| 2015-11 |
研討會論文
|
Resistive switching memory characteristics using a new Ir/SiOx/TiN structure |
B. L. You, S. Roy, S. Samanta, S. Maikap |
|
| 2015-11 |
研討會論文
|
Switching mechanism for W/Ta2O5/TiN resistive RAM |
S. Chakrabarti, S. Samanta, D. Jana, and S. Maikap |
|
| 2015-10 |
期刊論文
|
Resistive and new optical switching memory characteristics using thermally grown Ge0.2Se0.8 film in Cu/GeSex/W structure |
D. Jana, S. Chakrabarti, S. Z. Rahaman, and S. Maikap |
Nanoscale Research Letters
|
| 2015-09 |
期刊論文
|
Energy band alignments Al2O3-HfO2/Al2O3 nanolaminates/SiO2/p type Si structures |
A. Rifai, S. Maikap, and Y. Nakamura |
J. Vac. Sci. Technol
|
| 2015-08 |
期刊論文
|
Observation of resistive switching memory by reducing device size in a new Cr/CrOx/TiOx/TiN structure |
D. Jana, S. Samanta, S. Roy, Y. F. Lin, and S. Maikap |
Nano-Micro Lett.
|
| 2015-04 |
期刊論文
|
Conductive bridging random access memory: challenges and opportunity for 3D architecture |
D. Jana, S. Roy, R. Panja, M. Dutta, S. Z. Rahaman, R. Mahapatra, and S. Maikap |
Nanoscale Research Letters
|
| 2015-04 |
研討會論文
|
Prospective and challenges of RRAM devices |
S. Maikap, S. Chakrabarti, and D. Jana |
|
| 2015-03 |
期刊論文
|
Improved resistive switching phenomena and mechanism using CuAl alloy in a new Cu:AlOx/TaOx/TiN structure |
S. Roy, S. Maikap, G. Sreekanth, M. Dutta, D. Jana, Y.Y. Chen, and J.R. Yang |
Journal of Alloys and Compounds
|
| 2014-12 |
期刊論文
|
Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application |
R. Panja, S. Roy, D. Jana and S. Maikap |
Nanoscale Research Letters
|
| 2014-12 |
期刊論文
|
RRAM characteristics using a new Cr/GdOx/TiN structure |
D. Jana, M. Dutta, S. Samanta and S. Maikap |
Nanoscale Research Letters
|
| 2014-12 |
研討會論文
|
Challenges and opportunities of resistive random access memory |
S. Maikap |
|
| 2014-12 |
研討會論文
|
Enhanced CBRAM characteristics using Cu nano layer in a novel W/Cu/Al2O3/TiN structure |
R. Panja, D. Jana and S. Maikap |
|
| 2014-12 |
研討會論文
|
Highly uniform and robust retention under 30 µA current operation by inserting ultrathin Al2O3 layer in TaOx based RRAM |
S. Samanta, D. Jana, S. Chakrabarti, M. Dutta, S. Roy, R. Mahapatra, S. Maikap, W. S. Chen, F. T. Chen, and M. J. Tsai |
|
| 2014-12 |
研討會論文
|
Robust data storage capability and improved device uniformity using optimize thickness of Al interfacial layer in novel W/Al/TaOx/TiN RRAM at 30 µA current compliance” |
S. Samanta, S. Chakrabarti, D. Jana, R. Mahapatra, and S. Maikap |
|
| 2014-11 |
期刊論文
|
Device size dependent improved resistive switching memory performance using W/TiN contact |
A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, T.-C. Tien, C. S. Lai, and M.-J. Tsai |
IEEE Transactions on Nanotechnology
|
| 2014-11 |
研討會論文
|
Fabrication and characterization of vertical 20 nm RRAM using novel Ir(20 nm)/AlOx/W cross point architecture |
D. Jana, A. Prakash, S. Chakrabarti and S. Maikap |
|
| 2014-11 |
研討會論文
|
Improved switching characteristics using CuAl alloy in Cu/CuAl/Ta2O5/TiN CBRAM device |
S. Roy, G. Sreekanth, M. Dutta, D. Jana, Y. Y. Chen, J. R. Yang and S. Maikap |
|
| 2014-11 |
研討會論文
|
Long data retention and improved device uniformity using a new W/Al2O3/TaOx/TiN RRAM at 30 µA operating current |
S. Samanta, S. Chakrabarti, D. Jana, M. Dutta, S. Roy, R. Mahapatra and S. Maikap |
|
| 2014-10 |
期刊論文
|
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
A. Prakash, S. Maikap, H. C. Chiu, T. C. Tien, and C. S. Lai |
Nanoscale Research Letters
|
| 2014-07 |
期刊論文
|
Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture |
S. Maikap, R. Panja, and D. Jana |
Nanoscale Research Letters
|
| 2014-06 |
期刊論文
|
Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure |
S. Maikap, D. Jana, M. Dutta and A. Prakash |
Nanoscale Research Letters
|
| 2014-06 |
研討會論文
|
Memory properties of atomic layer-deposited Al2O3, HfAlO, Al2O3/HfO2 nanolaminates for nonvolatile memory application |
A. Rifai, S.Maikap, D.Jana, P.Kumar, andY.Nakamura |
|
| 2014-06 |
研討會論文
|
Sidewall sub 20 nm resistive random access memory using AlOx switching material in W/AlOx/Ir structure |
D. Jana, A. Prakash and S. Maikap |
|
| 2014-06 |
研討會論文
|
Urea and glucose sensing using gold nanoparticles |
P. Kumar, K. Singh and S. Maikap |
|
| 2014-05 |
研討會論文
|
Charge trapping characteristics of atomic layer deposited HfO2/Al2O3 nanolaminates for nonvolatile memory application |
A. Rifai, S. Maikap, D. Jana, P. Kumar, and Y. Nakamura |
|
| 2014-05 |
研討會論文
|
Device size dependant resistive switching memory characteristics of W/TaOx/TiN RRAM devices |
S. Samanta, D. Jana, M. Dutta, A. Prakash and S. Maikap |
|
| 2014-05 |
研討會論文
|
Electron beam induced curved TiO2 film during the observation of transmission electron microscopy |
Y. Y. Chen, D. Jana, Y. W. Chen, S. Maikap and J. R. Yang |
|
| 2014-05 |
研討會論文
|
Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs |
S. Chakrabarti, D. Jana, M. Dutta and S. Maikap, Y.Y. Chen and J.R. Yang |
|
| 2014-05 |
研討會論文
|
Memory characteristics and investigation of switching mechanism by simulation in W/IL/TaOx/TiN structure |
S. Chakrabarti, D. Jana, M. Dutta, S. Maikap, Y. Y. Chen and J. R. Yang |
|
| 2014-05 |
研討會論文
|
Potentiometric glucose sensor using CdSe/ZnS quantum dots |
P. Kumar and S. Maikap |
|
| 2014-05 |
研討會論文
|
Resistive random access memory characteristics using novel W/HfOx/TiN structure |
M. Dutta, D. Jana, P. Kumar, Y.Y. Chen, S. Maikap and J. R. Yang |
|
| 2014-05 |
研討會論文
|
Resistive switching characteristics using Cu/AlOx/TiN CBRAM devices |
R. Panja, D. Jana, S. Maikap, Y.Y. Chen and J. R. Yang |
|
| 2014-05 |
研討會論文
|
Resistive switching phenomena using Cu/Ta2O5 /W structure and impact of 1T1R configuration |
S. Roy, D. Jana, A. Prakash and S. Maikap |
|
| 2014-04 |
期刊論文
|
Time dependent pH phenomena using Cde/ZnS quantum dots in EIS structure |
P. Kumar, S. Maikap, A. Prakash, and T. C. Tien |
Nanoscale Research Letters
|
| 2014-04 |
研討會論文
|
Low current cross point memory using gadolinium oxide switching material |
D. Jana, S. Maikap, Y. Y. Chen and J. R. Yang |
|
| 2014-01 |
期刊論文
|
Enhanced resistive switching phenomena using low positive voltage format and self compliance IrOx/GdOx/W cross point memories |
D. Jana, S. Maikap, A. Prakash, Y. Y. Chen, H. C. Chiu and J. R. Yang |
Nanoscale Research Letters
|
| 2013-12 |
期刊論文
|
Comparison of resistive switching characteristics using copper and aluminum electrodes on the GeOx/W cross point memories |
S. Z. Rahaman and S. Maikap |
Nanoscale Research Letters
|
| 2013-12 |
期刊論文
|
Self compliance improved resistive switching using Ir/TaOx/W cross point memory |
A. Prakash, D. Jana, S. Samanta, and S. Maikap |
Nanoscale Research Letters
|
| 2013-12 |
研討會論文
|
GeOx based nanoscale resistive switching memories |
S. Maikap and D. Jana |
|
| 2013-12 |
研討會論文
|
TaOx based nanoscale resistive switching memory using cross-point architecture |
S. Maikap and A. Prakash |
|
| 2013-10 |
期刊論文
|
TaOx-based resistive switching memories: Prospective and challenges |
A. Prakash, D. Jana, and S. Maikap |
Nanoscale Research Letters
|
| 2013-09 |
期刊論文
|
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials |
A. Prakash, S. Maikap, W. Banerjee, D. Jana, and C. S. Lai |
Nanoscale Research Letters
|
| 2013-05 |
期刊論文
|
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration |
A. Prakash, S. Maikap, S. Z. Rahaman, S. Majumdar, S. Manna, and S. K. Ray |
Nanoscale Research Letters
|
| 2013-04 |
研討會論文
|
Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure |
A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M.J. Tsai |
|
| 2013-04 |
研討會論文
|
Rough surface improved formation free low power resistive switching memory using IrOx/GdOx/W structure |
D.Jana, S.Maikap, A. Prakash, H.Y.Lee, W.S. Chen, F.T. Chen, M. J. Kao, and M. J. Tsai |
|
| 2013-03 |
期刊論文
|
Nanocrystals for silicon based light emitting and memory devices |
S.K. Ray, S. Maikap, W. Banerjee, and S. Das |
Journal of Physics D: Applied Physics
|
| 2013-01 |
研討會論文
|
Improved resistance memory characteristics and switching mechanism using TiN electrode on TaOx/W structure |
A. Prakash and S. Maikap |
|
| 2012-12 |
期刊論文
|
Enhanced nanoscale resistive memory characteristics and switching mechanism using high Ge content Ge0.5Se0.5 solid electrolyte |
S. Z. Rahaman, S. Maikap, A. Das, A. Prakash, Y. H. Wu, C. S. Lai, T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Tsai, and L. B. Chang |
Nanoscale Research Letters
|
| 2012-08 |
期刊論文
|
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film |
S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai |
Applied Physics Letters
|
| 2012-04 |
期刊論文
|
Improvement uniformity of resistive switching parameters by selecting the electroformation polarity in IrOx/TaOx/WOx/W structure |
A. Prakash, S. Maikap, C. S. Lai, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai |
Japanese Journal of Applied Physics
|
| 2012-03 |
期刊論文
|
Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament |
S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. Chen, T. C. Tien, and M. J. Tsai |
Journal of Applied Physics
|
| 2012- |
期刊論文
|
Excellent resistive memory characteristics and switching mechanism using Ti nanolayer at the Cu/TaOx interface |
S. Z. Rahaman, S. Maikap, T. C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai |
Nanoscale Research Letters
|
| 2011-12 |
期刊論文
|
Improved resistive switching memory characteristics using core shell IrOx nano dots in Al2O3/WOx bilayer structure |
W. Banerjee, S. Maikap, S. Z. Rahaman, and A. Prakash |
Journal of The Electrochemical Society
|
| 2010-12 |
期刊論文
|
Improved bipolar resistive switching memory using W/TaOx/W structure |
A. Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M. J. Tsai, and M. J. Kao |
Advanced Materials Research
|
| 2010-03 |
期刊論文
|
Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se 0.6 solid electrolyte |
S. Z. Rahaman, S. Maikap, H. C. Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao and M. J. Tsai |
Electrochemical and Solid State Lett
|
| 2010-03 |
期刊論文
|
Characteristics of pH sensors fabricated by using protein mediated CdSe/ZnS quantum dots |
S. Maikap, A. Prakash, W. Banerjee, Anirban Das and C. S. Lai |
Microelectronics Reliability
|
| 2010-02 |
期刊論文
|
High Ge content of SiGe Channel pMOSFETs on Si (110) surfaces |
M. H. Lee, S. T. Chang, S. Maikap, C. Y. Peng, and C. H. Lee |
IEEE Electron Dev. Lett.
|
| 2010-02 |
期刊論文
|
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid electrolyte |
S. Z. Rahaman and S. Maikap |
Microelectronics Reliability
|
| 2009-12 |
研討會論文
|
A fine nano layer (nanocrystal) coating by atomic layer deposition |
S. Maikap and Atanu Das |
|
| 2009-12 |
研討會論文
|
A novel resistive switching memory using high-k Ta2O5 films |
A. Prakash and S. Maikap |
|
| 2009-12 |
研討會論文
|
High-k Ta2O5 thin films with IrOx metal electrode for resistive memory applications |
S. Maikap, C. I. Lin, S. Z. Rahaman and W. Banerjee |
|
| 2009-12 |
研討會論文
|
Nanoscale nonvolatile memory characteristics of IrOx metal nanocrystals with double layers |
W. Banerjee, S. Maikap, W. C. Li, and J. R. Yang |
|
| 2009-12 |
研討會論文
|
Novel high-k Ta2O5 resistive memory switching using IrOx metal electrode |
C. I. Lin, A. Prakash and S. Maikap |
|
| 2009-12 |
研討會論文
|
Protein mediated gold nanocrystals for non-volatile memory applications |
Anirban Das, A. Prakash and S. Maikap |
|
| 2009-12 |
研討會論文
|
Protein mediated gold nanocrystals for pH sensors |
Anirban Das, A. Prakash, S. Maikap, and C. S. Lai |
|
| 2009-11 |
研討會論文
|
Double layers of IrOx metal nanocrystals for nanoscale nonvolatile flash memory device applications |
W. Banerjee, S. Maikap, W. C. Li, T. C. Tien, and J. R. Yang |
|
| 2009-11 |
研討會論文
|
Low current operation of resistive switching memory using Au/Cu/Ge0.2Se0.8/W structure |
S. Z. Rahaman, S. Maikap, M. J. Tsai, and M. J. Kao |
|
| 2009-11 |
研討會論文
|
Low power operation of resistive switching memory using novel IrOx/SrTiOx/W structure |
K C. Liao, A. Prakash, and S. Maikap |
|
| 2009-11 |
研討會論文
|
pH sensor using protein mediated CdSe/ZnS quantum dots |
Anirban Das, S. Maikap, and C. S. Lai |
|
| 2009-10 |
期刊論文
|
Ruthenium oxide metal nanocrystal capacitors with high-k dielectric tunneling barriers for nanoscale nonvolatile memory device applications |
Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, and M.-J. Tsai |
Microelectronics Engineering
|
| 2009-10 |
研討會論文
|
Formation free resistive switching memory device using Ge0.4Se0.6 solid electrolyte |
S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, and M. J. Tsai |
|
| 2009-09 |
研討會論文
|
Low current (5 pA) resistive switching memory using high-k Ta2O5 solid electrolyte |
S. Maikap, S. Z. Rahaman, T. Y. Wu, F. Chen, M. J. Kao, and M. J. Tsai |
|
| 2009-08 |
研討會論文
|
High-k Hf based nanocrystal memory capacitors with IrOx metal gate for NAND application |
W. Banerjee and S. Maikap |
|
| 2009-07 |
期刊論文
|
Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS |
T. C. Tien, L. C. Lin, L. S. Lee, C. J. Hwang, S. Maikap, and Y. M. Shulga |
J. Mater. Sci: Mater. Electron
|
| 2009-07 |
研討會論文
|
Memory characteristics of IrOx metal nanocrystals embedded in high-k Al2O3 films with IrOx metal gate |
S. Maikap, W. Banerjee, Anirban Das, W. C. Li, and J. R. Yang |
|
| 2009-07 |
研討會論文
|
pH sensor using protein mediated gold nanocrystal array |
Amit Prakash, Anirban Das, S. Maikap, and C. S. Lai |
|
| 2009-06 |
研討會論文
|
IrOx metal nanocrystal flash memory device with IrOx metal gate for NAND application |
W. Banerjee, S. Maikap, W. C. Li, T.C. Tien, and J. R. Yang |
|
| 2009-05 |
期刊論文
|
Physical and memory characteristics of atomic layer deposited high-k HfAlO nanocrystal capacitors with IrOx metal gate |
A. Das, S. Maikap, W. C. Li, L. B. Chang, and J. R. Yang |
Jpn. J. Appl. Phys.
|
| 2009-05 |
研討會論文
|
Cu chain formation in Cu/Ta2O5/TiN resistive switching memory |
Y. R. Tsai, S. Z. Rahaman, and S. Maikap |
|
| 2009-05 |
研討會論文
|
High-k HfAlOx single layer nanocrystal memory capacitors for nanoscale NAND application |
W. C. Li, S. Maikap, and J. R. Yang |
|
| 2009-05 |
研討會論文
|
Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure |
S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, H. C. Chiu |
|
| 2009-05 |
研討會論文
|
Memory characteristics of IrOx metal nanocrystals with IrOx metal gate |
S. Maikap, W. Banerjee, W. C. Li, and J. R. Yang |
|
| 2009-04 |
研討會論文
|
Low Current and Voltage Resistive Switching Memory Device Using Novel Cu/Ta2O5/W Structure |
S. Z. Rahaman, S. Maikap, C.-H. Lin, T.-Y. Wu, Y. S. Chen, P.-J. Tzeng, F. Chen, C. S. Lai |
|
| 2009-03 |
研討會論文
|
High-k Ta2O5 film for resistive switching memory application |
Y.-R. Tsai, K.-C. Liao and S. Maikap |
|
| 2009-01 |
期刊論文
|
High-k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nanomixtures |
S. Maikap*, Atanu Das, T.-Y. Wang, T.-C. Tien, and L.-B. Changa |
Journal of The Electrochemical Society
|
| 2008-12 |
期刊論文
|
TiN nanocrystal flash memory devices |
S. Maikap*, P.J. Tzeng , C.H. Lin, Ting-Yu Wang, H.Y. Lee, Sheng-Shiung Tzeng, C.C. Wang |
Int. J. Nanomanufacturing
|
| 2008-12 |
專書論文
|
Dilute carbon alloy group IV semiconductor heterostructures for advanced MOSFET devices |
S. K. Ray, R. Mahapatra, G. S. Kar, and S. Maikap |
|
| 2008-11 |
研討會論文
|
Characteristics of atomic layer deposited high-k HfAlOx nanocrystals in n-Si/SiO2/HfO2/HfAlOx/Al2O3/Pt memory capacitors |
麥凱 |
|
| 2008-11 |
研討會論文
|
Charge storage characteristics of ALD high-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices for nanoscale NAND applications |
麥凱 |
|
| 2008-11 |
研討會論文
|
Memory characteristics of atomic layer deposited HfO2 nanocrystal capacitors with IrOx metal gate |
麥凱 |
|
| 2008-11 |
研討會論文
|
Nonvolatile memory characteristics of ALD RuOX metal nanocrystals in the n-Si/SiO2/HfO2/RuOX/Al2O3/IrOX capacitors |
麥凱 |
|
| 2008-11 |
研討會論文
|
Novel IrOx metal nanocrystal memory device with IrOx metal gate |
麥凱 |
|
| 2008-11 |
研討會論文
|
Novel resistive memory device using Cu/GeSe/W structure with low current operation |
麥凱 |
|
| 2008-10 |
期刊論文
|
Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers |
D. Panda, S. Maikap, A. Dhar, and S. K. Ray |
Electrochemical and Solid State Lett.
|
| 2008-10 |
期刊論文
|
Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers |
麥凱 |
Electrochemical and Solid-State Lett.
|
| 2008-10 |
研討會論文
|
Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers |
麥凱 |
|
| 2008-10 |
研討會論文
|
Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications |
麥凱 |
|
| 2008-09 |
期刊論文
|
Nanoscale (EOT=5.6 nm) nonvolatile memory characteristics using n Si/SiO2/HfAlO nanocrystals/Al2O3/Pt capacitors |
SMaikap*, S Z Rahaman and T C Tien |
Nanotechnology
|
| 2008-09 |
研討會論文
|
Nanoscale (EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited high-k HfAlO nanocrystals |
麥凱 |
|
| 2008-09 |
研討會論文
|
Resistive switching memory using high-k Ta2O5 films |
麥凱 |
|
| 2008-08 |
期刊論文
|
Studying the impact of carbon on device performance for strained Si MOSFETs |
麥凱 |
Thin Solid Film.
|
| 2008-07 |
期刊論文
|
The role of carbon on performance of strained-Si:C surface channel NMOSFETs |
麥凱 |
Solid-Stale Electron.
|
| 2008-06 |
研討會論文
|
Flash Memory Device Characteristics of Atomic Layer Deposited Crystallite Al2O3 films with Large Memory Window and Long Retention |
麥凱 |
|
| 2008-05 |
研討會論文
|
Memory characteristics of high-k HfAlO nano-mixtures |
麥凱 |
|
| 2008-05 |
研討會論文
|
Nanoscale nonvolatile memory devices using high-k HfO2/TiO2 multilayers |
麥凱 |
|
| 2008-05 |
研討會論文
|
RuO2 metal nanocrystal memory prepared at high temperature |
麥凱 |
|
| 2008-04 |
研討會論文
|
Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating |
麥凱 |
|
| 2008-04 |
其他
|
Method of fabricating metal compound dots dielectric piece |
C. H. Lin, P. J. Tzeng, and S. Maikap |
|
| 2008-03 |
期刊論文
|
Low Voltage Operation of High-k HfO2/TiO2/Al2O3 Single Quantum Well for Nanoscale Flash Memory Device Applications |
麥凱 |
Jpn. J. Appl. Phys.
|
| 2008-03 |
期刊論文
|
Short channel effect improved strained Si:C source/drain PMOSFETs |
麥凱 |
Appl. Surf. Sci.
|
| 2008-02 |
期刊論文
|
Memory Characteristics of Atomic-Layer-Deposited High-k HfAlO Nanocrystal Capacitors |
麥凱 |
Electrochemical and Solid-State Letters
|
| 2008--- |
專書論文
|
Dilute carbon alloy group-IV semiconductor heterostructures for advanced MOSFET devices |
麥凱 |
|
| 2007-07 |
期刊論文
|
Charge storage characteristics of atomic layer deposited RuOx nanocrystals |
麥凱 |
Appl. Phys. Lett.
|
| 2007-04 |
研討會論文
|
High k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices |
麥凱 |
|
| 2007--- |
期刊論文
|
Band offsets and charge storage characteristics of atomic layer deposited high κ HfO2/TiO2 multilayers |
麥凱 |
Appl. Phys. Lett.
|
| 2007--- |
期刊論文
|
Characteristics of strained germanium p-and n channel field effect transistors on Si (111) substrate |
麥凱 |
Semicond. Sci. Technol.
|
| 2007--- |
期刊論文
|
Charge trapping characteristics of atomic layer deposited HfO2 films with Al2O3 as a blocking oxide for high density nonvolatile memory device applications |
麥凱 |
Semicond. Sci.Technol.
|
| 2007--- |
期刊論文
|
HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high performance nonvolatile memory device applications |
麥凱 |
Jpn. J. Appl. Phys.
|
| 2007--- |
期刊論文
|
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si |
麥凱 |
Appl. Phys. Lett.
|
| 2007--- |
期刊論文
|
Low power switching of nonvolatile resistive memory using hafnium oxide |
麥凱 |
Jpn. J. Appl. Phys.
|
| 2007--- |
期刊論文
|
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors |
麥凱 |
Appl. Phys. Lett.
|
| 2007--- |
期刊論文
|
TiO2 nanocrytal prepared by atomic layer deposition system for nonvolatile memory application |
麥凱 |
Jpn. J. Appl. Phys.
|
| 2007--- |
研討會論文
|
Effect of nano-grain on the memory characteristics of high- HfAlO charge trapping layers for nano-scale nonvolatile memory device applications |
麥凱 |
|
| 2007--- |
研討會論文
|
Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers |
麥凱 |
|
| 2006-12 |
期刊論文
|
Hole confinement at Si/SiGe heterojunction of strained-Si N- and PMOS devices |
J. Y. Wei, S. Maikap, M. H. Lee, C. C. Lee and C. W. Liu |
Solid-State Electron.
|
| 2006-12 |
期刊論文
|
The effect of strain on p channel metal oxide semiconductor field effect transistor current enhancement using stress modulation silicon nitride films |
C. H. Lin, Z. Pei, S. Maikap, C. C. Wang, C. S. Lu, L. S. Lee and M. J. Tsai |
Appl. Phys. Lett.
|
| 2006-09 |
研討會論文
|
High-k HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications |
S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang,. L. S. Lee, J. R. Yang and |
|
| 2006-09 |
研討會論文
|
Low power of nonvolatile hafnium oxide resistive memory |
H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai |
|
| 2006-09 |
研討會論文
|
TiO2 nanocrystal preapared by ALD system at elevated temperature |
C. H. Lin, C. C. Wang, P. J. Tzeng, S. Maikap, H. Y. Lee, L. S. Lee and M. J. Tsai |
|
| 2006-09 |
研討會論文
|
Very low voltage operation of Al2O3/HfO2/TiO2/Al2O3 single quantum well memory with good retention |
S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, L. S. Lee, J. R. Yang, and M.-J. Tsai |
|
| 2006-08 |
期刊論文
|
Characteristics of ZrO2 gate dielectrics on O2 and N2O plasma treated partially strain compensated Si0.69Ge0.3C0.01 layers |
R. Mahapatra, S. Maikap, Je Hun Lee and S. K. Ray |
J. Appl. Phys.
|
| 2006--- |
期刊論文
|
Ultrathin gate dielectrics for silicon heterostucture MOSFET devices |
S. K. Ray, R. Mahapatra, and S. Maikap |
Journal of Material Science: Materials in Electronics
|
| 2006--- |
研討會論文
|
High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention |
S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, T. C. Tien, S. |
|
| 2005-09 |
期刊論文
|
Abnormal hole mobility of biaxial strained-Si |
M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu |
J. Appl. Phys.
|
| 2005-09 |
期刊論文
|
The impact of Hf metal pre-deposition on the physical and electrical properties of ultrathin HfO2 films on Si0.9954C0.0046/Si heterolayers |
K. C. Liu, S. Maikap, C. H. Wu, Y. S. Chang, and P. S. Chen |
Semicond. Sci. Technol.
|
| 2005-06 |
期刊論文
|
Physical and reliability characteristics of Hf based gate dielectrics on strained SiGe MOS devices |
P. J. Tzeng, S. Maikap, C. S. Liang, P. S. Chen, and L. S. Lee |
IEEE Trans. Device and Material Reliability
|
| 2005-05 |
期刊論文
|
Mobility-Enhancement Technologies |
C. W. Liu, S. Maikap, and C. -Y. Yu |
IEEE Circuits and Devices Magazine
|
| 2005-04 |
期刊論文
|
Characteristics of ultrathin Hf silicate gate dielectrics on Si0.9954C0.0046/Si heterolayers |
K. C. Liu, S. Maikap, and P. S. Chen |
Jpn. J. Appl. Phys.
|
| 2005-02 |
期刊論文
|
Effects of interfacial NH3/N2O plasma treatment on the structural and electrical properties of ultrathin HfO2 gate dielectrics on p-Si substrates |
S. Maikap, J. H. Lee, R. Mahapatra, S. Pal, Y. S. No, W. K. Choi, S. K. Ray, and D. Y. Kim |
Solid-State Electron.
|
| 2005-02 |
期刊論文
|
MBE-grown high-k gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics |
W. C. Lee, Y. J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S |
J. Crystal. Growth
|
| 2005--- |
期刊論文
|
Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers |
R. Mahapatra, S. Maikap, A. Dhar, B. K. Mathur, and S. K. Ray |
Ferroelectrics
|
| 2005--- |
期刊論文
|
Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation |
R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray |
Solid-State Electron.
|
| 2004-11 |
期刊論文
|
Evidence of Si/ SiGe heterojunction roughness scattering |
C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C. Y. Yu, J. Y. Wei, S. Maikap |
Appl. Phys. Lett.
|
| 2004-10 |
期刊論文
|
Ge outdiffusion effect on flicker noise in strained-Si NMOSFETs |
W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen |
IEEE Electron Dev. Lett.
|
| 2004-10 |
期刊論文
|
Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure |
S. K. Ray, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya, and J. H. Lee |
Materials Science in Semiconductor Processing
|
| 2004-07 |
期刊論文
|
Mechanically strained Si/SiGe HBTs |
F. Yuan, S. R. Jan, S. Maikap, Y. H. Liu, C. S. Liang, and C. W. Liu |
IEEE Electron Dev. Lett.
|
| 2004-02 |
期刊論文
|
Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystals trilayer structure |
K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A Dhar, H. N. Acharya, S. Maikap, Je-Hun Lee and S |
Appl. Phys. Lett.
|
| 2004-01 |
期刊論文
|
Mechanically strained strained-Si NMOSFETs |
S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu |
IEEE Electron Dev. Lett.
|
| 2004-01 |
期刊論文
|
Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained Si0.74Ge0.26/Si heterolayers |
S. Maikap, Je Hun Lee and Doh Y. Kim, R. Mahapatra, S. K. Ray, Jae Hoon Song, Y. S. No and Won Kook |
J. Vac. Sci. Technol. B
|
| 2004--- |
期刊論文
|
Effect of temperature on the electrical properties of plasma grown oxides on Si0.993C0.007 layers |
R. Mahapatra, G. S. Kar, S. K. Ray, and S. Maikap |
J. Mat. Sci.: Mat. Electron.
|
| 2004--- |
期刊論文
|
Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process |
S. K. Samanta, S Chatterjee, S. Maikap and C. K. Maiti |
Solid-State Electron.
|
| 2004--- |
研討會論文
|
Packagestrain enhanced device and circuit performance |
S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang and C. W. Liu |
|
| 2003-12 |
期刊論文
|
Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates |
S. Chatterjee, S. Nandi, S. Maikap, S. K. Samanta and C. K. Maiti |
Semicond. Sci. Technol.
|
| 2003-12 |
期刊論文
|
Metal-oxide-semiconductor structure with Ge nanocrystals for memory device applications |
K. Das, S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray |
IEE Electron. Lett.
|
| 2003-09 |
期刊論文
|
Structural and electrical characteristics of the interfacial layer of ultra-thin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers |
R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, Doh Y. Kim, D. Bhattacharya and S. K. Ray |
J. Vac. Sci. Technol. A
|
| 2003-07 |
期刊論文
|
Characteristics of ultra-thin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers |
Je-Hun Lee, S. Maikap, Doh. Y. Kim, R. Mahapatra, S. K. Ray, Y. S. Noh and W.-K. Choi |
Appl. Phys. Lett.
|
| 2003-06 |
期刊論文
|
Effects of interfacial nitrogen on the structural and electrical properties of ultra thin ZrO2 gate dielectrics on partially strain compensated SiGeC/Si heterolayers |
R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, B. K. Mathur, N. M. Hwang, D. Y. Kim and S |
Appl. Phys. Lett.
|
| 2003-04 |
期刊論文
|
Electrical and interfacial characteristics of ultra-thin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure |
R. Mahapatra, Je Hun Lee, S. Maikap, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur and S. |
Appl. Phys. Lett.
|
| 2003-03 |
期刊論文
|
Interface properties and reliability of ultrathin oxynitride films grown on strained- Si1-xGex substrates |
S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti |
J. Appl. Phys.
|
| 2003--- |
期刊論文
|
Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si |
Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C.K. Maiti, S. Maikap, W.-K. Choi |
Microelectron. Engg.
|
| 2003--- |
期刊論文
|
Hafnium oxide gate dielectric for strained-Si1-xGex |
C. K. Maiti, S. Maikap, S. Chatterjee, S. K. Nandi and S. K. Samanta |
Solid-State Electron.
|
| 2003--- |
研討會論文
|
Comprehensive low frequency and RF noise characteristics in strained Si NMOSFETs |
M. H. Lee, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, |
|
| 2002-10 |
期刊論文
|
Investigations on Ta2O5/ZnO insulator-semiconductor interfaces |
S. Nandi, Won-Kook Choi, Young S. Noh, Min S. Oh, S. Maikap, Nong M. Hwang, Doh-Y. Kim, S. Chatterje |
IEE Electron. Lett.
|
| 2002-08 |
期刊論文
|
Electrical properties of plasma grown gate oxides on tensile strained Si1-yCy layers |
R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray |
IEE Electron. Lett.
|
| 2002-07 |
期刊論文
|
Series resistance and mobility degradation factor in C incorporated SiGe heterostructure p MOSFETs |
G. S. Kar, S. Maikap, S. K. Banerjee, S. K. Ray |
Semicond. Sci. Technol.
|
| 2002-01 |
期刊論文
|
Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers |
G. S. Kar, S. Maikap, S. K. Banerjee and S. K. Ray |
IEE Electron. Lett.
|
| 2002--- |
期刊論文
|
Effective mobility and alloy scattering in strain compensated SiGeC inversion layer |
G. S. Kar, S. Maikap, S. K. Ray, S. K. Banerjee and N. B. Chakrabarti |
Semicond. Sci. Technol.
|
| 2002--- |
期刊論文
|
Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers |
S. K. Samanta, S. Maikap, S.Chatterjee, C.K.Maiti |
Solid-State Electron.
|
| 2001-07 |
期刊論文
|
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
S. K. Samanta, S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti |
Semicond. Sci. Technol.
|
| 2001-01 |
期刊論文
|
Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers |
S. Maikap, S. K. Ray, S. K. Banerjee and C. K. Maiti |
Semicond. Sci. Technol.
|
| 2001--- |
期刊論文
|
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers |
S. K. Ray, S. Maikap, S. K. Samanta, S. K. Banerjee and C. K. Maiti |
Solid-State Electron.
|
| 2001--- |
期刊論文
|
Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si |
L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti |
Solid-State Electron.
|
| 2001--- |
期刊論文
|
Schottky diode on Si/SiGeC quantum well heterostructures for long wavelength IR detector |
G. S. Kar, S. Maikap, A. Dhar and S. K. Ray |
Proc. of SPIE Int. Soc, Opt. Eng
|
| 2001--- |
期刊論文
|
Technology CAD of SiGe-HFETs |
S. Maikap, B. Senapati and C. K. Maiti |
Defnce Science Journal
|
| 2000-09 |
期刊論文
|
Effects of NO-plasma treatment on the electrical properties of TEOS-deposited silicon dioxides on strained- Si1-xGex layers |
B. Senapati, S. Samanta, S. Maikap, L. K. Bera and C. K. Maiti |
Appl. Phys. Lett.
|
| 2000--- |
期刊論文
|
Effects of O2/N2O-plasma treatment on nitride films on strained-Si |
L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti |
Solid-State Electron.
|
| 2000--- |
期刊論文
|
Electrical characterization of ultrathin gate oxides on Si/SiGeC/Si quantum well heterostructures |
S. Maikap, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti |
Semicond. Sci. Technol.
|
| 2000--- |
期刊論文
|
Electrical characterization of Si/ Si1-xGex/Si quantum well heterostuctures using a MOS capacitor |
S. Maikap, L. K. Bera, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti |
Solid-State. Electron.
|
| 2000--- |
期刊論文
|
Growth of silicon-germanium alloy layers |
C. K. Maiti, L. K. Bera, S. Maikap, S. K. Ray, R. Kesavan, V. Kumar and N. B. Chakrabarti |
Defence Science Journal
|
| 1999-08 |
期刊論文
|
NO/O2/NO plasma grown oxynitride films on strained-Si1-xGex |
S. Maikap, L. K. Bera, S. K. Ray and C. K. Maiti |
IEE Electron. Lett.
|
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