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研究人才詳細資料


出版年月 著作類別 著作名稱 作者 收錄出處
2024-06 期刊論文 Low voltage high polarization by optimizing scavenged WNx interfacial capping layer at the Ru/HfxZr1-xO2 interface and evidence of fatigue mechanism A. Aich, A. Senapati, Z.-F. Lou, Y.-P. Chen, S.-Y. Huang, S. Maikap, M.-H. Lee, and C. W. Liu Advanced Materials Interfaces
2024-05 期刊論文 Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator Z.-F. Lou, A. Senapati, J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, Y.-T. Chang, C. W. Liu, S. Maikap, and M. H. Lee IEEE Transactions on Materials for Electron Devices
2024-04 期刊論文 Low polarization loss of long endurance on scavenged Ru-based electrode ferroelectric Hf0.5Zr0.5O2 by optimizing TiNx interfacial capping layer and its fatigue mechanism A. Senapati, Z.-F. Lou, J.-Y. Lee, Y.-P. Chen, S.-Y. Huang, S. Maikap, M.-H. Lee, and C. W. Liu IEEE Electron Device Letters
2024-04 期刊論文 Unleashing endurance limits of emerging memory: Multi-level FeRAM recovery array empowered by a coordinated inverting amplifier circuit K.-Y. Hsiang, F.-S. Chang, Z.-F. Lou, A. Aich, A. Senapati, J.-Y. Lee, Z.-X. Li, J.-H. Chen, C.-H. Liu, C. W. Liu, S. Maikap, P. Su, T.-H. Hou, and M. H. Lee IEEE Transactions on Electron Devices
2023-12 研討會論文 Doped high-k materials for 3D ferroelectric/anti-ferroelectric memory and neuromorphic applications (Invited Talk) S. Maikap, A. Senapati, A. Aich, C. W. Liu, and M.-H. Lee
2023-12 研討會論文 Investigation of ferroelectric tunnel junction characteristics using optimized WNx interfacial capping layer thickness on 5 nm Hf0.25Zr0.75O2 anti-ferroelectric film S. Das, Z.-F. Lou, A. Senapati, A. Aich, Y.-T. Chang, Y.-P. Chen, S.-Y. Huang, S. Maikap, C. W. Liu, and M.-H. Lee
2023-10 研討會論文 A thin Si3N4 interfacial layer on Hf0.33Zr0.66O2 film for high-polarization and ferroelectric tunnel junction applications (Best Oral Paper Award) R. Karmakar, Z.-F. Lou, Y.-T. Chang, A. Aich, A. Senapati, Y.-P. Chen, S.-Y. Huang, S. Maikap, C. W. Liu, and M.-H. Lee
2023-10 研討會論文 Improved FTJ characteristics by optimizing TiN interfacial layer thickness on 5 nm AFE HZO (Zr=75%) film (Excellent Poster Paper Award) A. Senapati, Z.-F. Lou, Y.-T. Chang, A. Aich, Y.-P. Chen, S.-Y. Huang, S. Maikap, C. W. Liu, and M.-H. Lee
2023-10 研討會論文 Low field polarization using a thin TiNx interfacial layer at the Pt/Hf0.33Zr0.66O2 interface annealing at low temperature of 350oC S. Das, Z.-F. Lou, A. Senapati, Y.-T. Chang, R. Karmakar, Y.-P. Chen, S.-Y. Huang, S. Maikap, C.-W. Liu, and M.-H. Lee
2023-10 研討會論文 Novel carbon-based interfacial capping layer at the Ru/Hf0.33Zr0.66O2 anti-ferroelectric interface for low voltage (±2V) polarization and ferroelectric tunnel junction applications A. Aich, Z.-F. Lou, A. Senapati, Y.-T. Chang, Y.-P. Chen, S.-Y. Huang, S. Maikap, C. W. Liu, and M.-H. Lee
2023-09 研討會論文 A Thin TiNx Layer on Pt Electrode Based Hf0.33Zr0.66O2 Ferroelectric Memory A. Senapati, Z.-F. Lou, F.-S. Chang, Y.-R. Chen, Y.-P. Chen, S.-Y. Huang, S. Maikap, C.-W. Liu, and M.-H. Lee
2023-09 研討會論文 Novel WNx/C Interfacial Layer on Hf0.5Zr0.5O2 Ferroelectric Memory A. Aich, A. Senapati, Z.-F. Lou, F.-S. Chang, Y.-R. Chen, Y.-P. Chen, S.-Y. Huang, S. Maikap, C.-W. Liu, and M.-H. Lee
2023-06 研討會論文 Impact of Si-Based Interfacial Layer for Ferroelectric Memory S. Maikap, A. Senapati, Z.-F. Lou and M.-H. Lee
2022-12 研討會論文 Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu , S. Maikap, and M. H. Lee
2022-10 研討會論文 Ferroelectric Memory Characteristics of Stable La:HfO2 Film Deposited on Hf0.5Zr0.5O2/TiN Substrate A. Senapati, S. Maikap, C- Y. Lin, C-Y Liao, and M- H. Lee
2022-10 研討會論文 Ferroelectric Memory Characteristics with Long Endurance of Novel La:HfO2 Film at Elevated Annealing Temperature S. Maikap, A. Senapati, Y- L. Shen, S. Das, C- Y. Lin, C- Y. Liao, and M- H. Lee
2022-10 研討會論文 Ferroelectric and Anti-ferroelectric Characteristics by Using WNx Layer at the Ru/Hf0.33Zr0.66O2 Interface A. Aich, A. Senapati, S. Maikap, C- Y. Lin, C- Y. Liao, and M- H. Lee
2022-10 研討會論文 Novel SiNx thin-layer treated on HZO film for ferroelectric memory and ferroelectric-tunnel-junction applications (Candidate of Best Paper Award) R. Karmakar, A. Senapati, C- Y. Lin, C- Y. Liao, S. Maikap and M- H. Lee
2022-09 期刊論文 Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process A. Deogaonkar, M. Seal, A. Senapati, S. Ginnaram, A. Ranjan, S. Maikap, and N. Raghavan Microelectronics Reliability
2022-09 期刊論文 Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems M. Seal, A. Deogaonkar, A. Senapati, S. Maikap, and N. Raghavan Microelectronics Reliability
2022-09 研討會論文 Improved Ferroelectric Memory Characteristics by Using TiNx in Novel Ru/TiNx/Hf0.5Zr0.5O2/TiN Capacitor A. Senapati, S. Maikap, C- Y. Lin, C- Y. Liao, and M- H. Lee
2022-01 期刊論文 Performance improvement in E-Gun deposited SiOx- based RRAM device by switching material thickness reduction S. Roy and S. Maikap Journal of Physics: Conference Series
2021-12 期刊論文 Dopamine sensing characteristics and mechanism by using N2/O2 annealing in Pt/Ti/n-Si structure Y.-P. Chen, A. Roy, P.-H. Wu, S.-Y. Huang, and S. Maikap Electronics
2021-11 研討會論文 Evaluation of FE behavior in Pt/TiN/HZO/p-Si MFS and Pt/TiN/HZO/TiN MFM structure for future logic/memory devices (Excellent Poster Paper Award) A. Senapati, S. Maikap, A. Aich, C.-Y. Lin, C.-Y. Liao, and M.-H. Lee
2021-11 研討會論文 Ferroelectric memory characteristics using Pt electrode in Pt/Hf0.33Zr0.66O2/TiN structure S. Maikap, A. Senapati, A. Aich, C.-Y. Lin, C.-Y. Liao, and M.-H. Lee
2021-10 研討會論文 Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction S. Roy and S. Maikap
2021-01 期刊論文 Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory S Ginnaram and S Maikap Journal of Physics and Chemistry of Solids
2020-12 研討會論文 Neuromorphic characteristics of MoS2-based CBRAM using thin Ti layer for future artificial intelligence applications S. Maikap, S. Ginnaram, M. Seal, and A. Senapati
2020-10 研討會論文 HfOx Based Ni/HfOx/TiN Memristor for Neuromorphic Application A. Aich, S. Ginnaram, A. Senapati, M. Seal and Si. Maikap
2020-10 研討會論文 Low Current Switching and Artificial Synapse Characteristics Using Ta Interfacial Layer on MoS2 Based CBRAM S. Maikap, A. Senapati, and M. Dutta
2020-10 研討會論文 MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application A Senapati, S Ginnaram, M Dutta, and S Maikap
2020-10 研討會論文 Platinum membrane on Ti/n-Si substrate for dopamine detection A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu
2020-10 研討會論文 Thermally Deposited AlOx Switching Layer in Al/Cu/AlOx/TiN Memristor for Neuromorphic Application S. Maikap, A. Deogaonkar, S. Ginnaram, A. Senapati, S. Yilin and N. Raghavan
2020-08 期刊論文 Switching Characteristics andMechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor C. F. Chiu , S. Ginnaram , A. Senapati , Y. P. Chen and S. Maikap Electronics
2020-07 期刊論文 Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM A. Senapati, S. Roy, Y. F. Lin, M. Dutta and S. Maikap Electronics
2020-06 研討會論文 Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation S. Maikap and A. Senapati
2020-05 期刊論文 In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices S. Maikap and W. Banerjee Advanced Electronic Materials
2020-05 期刊論文 Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte−Insulator−Nanowire Structure A. Roy, Y. P. Chen, J. T. Qiu, and S. Maikap Analytical Chemistry
2020-03 期刊論文 Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a‑COx‑Based Conductive Bridge Random Access Memory S. Ginnaram, J. T. Qiu, and S. Maikap ACS Omega
2020-03 期刊論文 Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points M. Dutta, A. Senapati, S. Ginnaram, and S. Maikap Vacuum
2020-03 期刊論文 Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application S. Ginnaram, J. T. Qiu, and S. Maikap IEEE Electron Device Letters
2019-12 研討會論文 Interface Engineering in Conductive Bridge RAM for Future Non-volatile Memory and Artificial Synapse Applications S. Maikap
2019-11 期刊論文 Sensing characteristics of dopamine using Pt/n-Si structure A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu Vacuum
2019-10 研討會論文 Cross point Memory and Neuromorphic Characteri stics by Using Cu Redox Mechanism in Ti/MoS2 based CBRAM device S. Maikap, S. Ginnaram, A. Senapati, and M. Dutta
2019-10 研討會論文 Dopamine sensing characteristics by using Ru/SiO2/n-Si structure A. Roy, S. Maikap, P. J. Tzeng, and J. T. Qiu
2019-10 研討會論文 Improved resistive switching and neuromorphic phenomena by using Hf as an interfacial layer in MoS2 based CBRAM device S. Ginnaram and S. Maikap
2019-10 研討會論文 Improving switching uniformity and neuromorphic characteristics by incorporating Ti buffer layer in Cu/Ti/MoS2/TiN structure M. Dutta, M. Seal, A. Senapati, P.-H. Hsu and S. Maikap
2019-10 研討會論文 Porous Ir buffer layer and electrochemical reaction on Cu controlling based resistive switching memory device M. Dutta, A. Deogaonkar, S. Ginnaram, A. Senapati, S. Ankit and S. Maikap
2019-10 研討會論文 Resistive switching and dopamine sensing by using Ir top electrode on TaOx based memory platform S. Maikap, A. Senapati, A. Aich and S. Samanta
2019-06 研討會論文 Impact of Ti Interfacial Layer in Cu/Ti/MoS2/TiN Conductive Bridging Resistive Switching Memory for Neuromorphic Application S. Maikap, A. Roy, and M. Dutta
2019-06 研討會論文 Sensing of dopamine using a thin porous iridium layer on Si substrate A. Roy and S. Maikap
2019-03 期刊論文 Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices S. Maji, S. Samanta, P. Das, S. Maikap, V. R. Dhanak, I. Z. Mitrovic, and R. Mahapatra J. Vac. Sci. Technol. B
2019-02 期刊論文 Controlling resistive switching by using an optimized MoS2 interfacial layer and the role of top electrodes on ascorbic acid sensing in TaOx‑based RRAM J. T. Qiu, S. Samanta, M. Dutta,, S. Ginnaram, and S. Maikap Langmuir
2018-12 期刊論文 Controlling conductive filament and tributyrin sensing using an optimized porous iridium interfacial layer in Cu/Ir/TiNxOy/TiN M. Dutta, S. Maikap and J. T. Qiu Advanced Electronic Materials
2018-11 研討會論文 HfOx-based resistive random access memory for neuromorphic application S. Jana, S. Maikap, M. Dutta and J. T. Qiu
2018-11 研討會論文 Investigation of Ni/HfOx/TiN resistive switching memory for neuromorphic applications S. Ginnaram and S. Maikap
2018-11 研討會論文 Resistive switching and neuromorphic evaluation of novel Cu/Ti(Mo)/MoS2/TiN structure M. Dutta and S. Maikap
2018-11 研討會論文 Sensing characteristics of dopamine by using Pt/n-Si Schottky diode S. Maikap, A. Roy and J. T. Qiu
2018-09 研討會論文 Cross-point resistive switching and glucose sensing by using porous Ir electrode in Ir/SiOx/W memory platform S. Jana, M. Dutta and S. Maikap
2018-06 研討會論文 Resistive switching memory and biosensing characteristics by using novel Ni/TiNxOy/TiN structure S. Ginnaram and S. Maikap
2018-05 研討會論文 Cu Filament Based Resistive Switching and Oxidation Reduction through Dopamine Sensing in Novel Cu/MoS2/TiN Structure M. Dutta, S. Ginnaram, A. Roy and S. Maikap
2018-04 研討會論文 Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection S. Jana, S. Samanta, S. Roy, J. T. Qiu and S. Maikap
2018-04 研討會論文 Prostate cancer biomarker detection by using Si nanowire based electrolyte/NiOx/SiO2/n-Si sensors A. Roy, J. T. Qiu, S. Maikap
2017-12 研討會論文 Al2O3 based resistive switching random access memory for H2O2/glucose sensing Siddheswar Maikap
2017-12 研討會論文 Antiparallel and negative voltage dependent multi –level resistive switching characteristics by using Al interfacial layer in Cu/Al/a-COx/TiN structure S. Ginnaram, S. Chakrabarti and S. Maikap
2017-11 研討會論文 Bias Modulated Resistive Switching Phenomena and Dopamine Sensing by Using Novel IrOx/Al2O3/TaOx/TiN Structure S. Samanta, A. Roy, S. Jana and S. Maikap
2017-11 研討會論文 Detection of H2O2/Sarcosine as a prostate cancer bio marker by using HfOx membrane in electrolyte-insulator-semiconductor structure S. Jana, M. Dutta, G. Sreekanth and S. Maikap
2017-11 研討會論文 IrOx nanostructures on SiO2/Si nanowire field-effect-transistor improved pH and breast cancer bio marker detection S. Maikap, S. Jana and P. Kumar
2017-11 研討會論文 Multifunctional characteristics of porous Ir thin layer for conductive bridging memory and tributyrine detection M. Dutta, A. Roy, S. Jana and S. Maikap
2017-11 研討會論文 NiOx nanolayer on chemical etched Si nanowire field-effect-transistor for prostate and lung cancer bio marker detection S. Maikap, A. Roy, S. Samanta and J. T. Qiu
2017-11 研討會論文 Non-enzymatic uric acid detection by using silicon oxide electrolyte insulator nanowire structure A. Roy, S. Chakrabarti, S. Maikap
2017-10 期刊論文 Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure S. Chakrabarti, R. Panja, S. Roy, A. Roy, S. Samanta, M. Dutta, S. Ginnaram, S. Maikap, H. M. Cheng, L.. N. Tsai, Y. L. Chang, R. Mahapatra, D. Jana, J. T. Qiu, J. R. Yang Applied Surface Science
2017-09 期刊論文 Effects of W/Ir top electrode on resistive switching and dopamine sensing by using optimized TaOx-based memory platform Subhranu Samanta, Siddheswar Maikap, Anisha Roy, Surajit Jana, and Jian-Tai Qiu Advanced Materials Interfaces
2017-09 期刊論文 Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure Somsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta, Surajit Jana, Anisha Roy and Jian-Tai Qiu Phys. Chem. Chem. Phys.
2017-09 期刊論文 Understanding of multi-level resistive switching mechanism in GeOxthrough redox reaction in H2O2/sarcosine prostate cancer biomarker detection Subhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, Surajit Jana, Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Mrinmoy Dutta, Sreekanth Ginnaram, Amit Prakash, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Jian-Tai Qiu & Samit K. Ray Scientific Reports
2017-09 研討會論文 Formation-free multilevel resistive switching through redox reaction in H2O2/prostate cancer biomarker detection using GeOx insulating oxide S. Samanta, A. Roy, S. Jana and S. Maikap
2017-09 研討會論文 Improved switching performance of the Cu/Ir/TiNxOy/TiN structure by introducing Ir buffer layer M. Dutta, S. Maikap
2017-09 研討會論文 Resistive switching of oxygen incorporated amorphous carbon (a-COx) and understanding the mechanism through pH/H2O2 sensing S. Ginnaram, A. Roy, S. Jana and S. Maikap
2017-09 研討會論文 Sarcosine as prostate cancer biomarker detection through H2O2 sensing by using nickel-oxide on Si nanowires A. Roy, S. Jana, J.-T. Qiu and S. Maikap
2017-09 研討會論文 pH sensitivity and low concentration detection of urea/H¬2O2 by using IrOx/HfOx membrane in electrolyte-insulator-semiconductor structure S. Jana, A. Roy, J.-T. Qiu and S. Maikap
2017-07 期刊論文 Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode Sourav Roy, Anisha Roy, Rajeswar Panja, Subhranu Samanta, Somsubhra Chakrabarti, Po-Lin Yu, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Jian-Tai Qiu Journal of Allows and Compounds
2017-07 期刊論文 Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra & Jer-Ren Yang Scientific Reports
2017-07 研討會論文 Detection of pH/H2O2 and prostate/breast cancer biomarker by using nickel oxide /iridium oxide sensing membrane in electrolyte-insulator-semiconductor structure S.Maikap
2017-03 研討會論文 Chemical Etched Si Nanowires and Porous IrOx/NiOx Membrane for uric acid, LOXL2 Breast cancer, and Prostate Cancer Biomarker Detections S. Maikap
2017-02 期刊論文 Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for Biomedical Applications P. Kumar, S. Maikap, S. Ginnaram, J.-T. Qiu, D. Jana, S. Chakrabarti, S. Samanta, K. Singh, A. Roy, S. Jana, M. Dutta, Y.-L. Chang, H.-M. Cheng, R. Mahapatra, H.-C. Chiu, and J.-R. Yang Journal of the Electrochemical Society
2016-11 研討會論文 Detection of pH and H2O2 sensing by using CdSe/ZnS nanoparticle in electrolyte –insulator-semiconductor structure P. Kumar, S. Jana, K. Singh, A. Roy, and S. Maikap
2016-11 研討會論文 Incorporation of Hf layer at the W/HfO2 interface for improving resistive switching memory characteristics M. Dutta, S. Maji, S. Samanta, G. Sreekanth, S. Roy, R. Panja, S. Chakrabarti, R. Mahapatra and S. Maikap
2016-11 研討會論文 Study of resistive switching characteristics in Cu/a-C/TiN structure G. Sreekanth, S. Samanta, M. Dutta, S. Chakrabarti, D. Jana and S. Maikap
2016-11 研討會論文 Uric acid sensing by using silicon nanowires in electrolyte –insulator-semiconductor structure A. Roy, P. Kumar, K. Singh, S. Jana and S. Maikap
2016-10 研討會論文 Invited talk S. Maikap
2016-10 研討會論文 Resistive switching memory arrays and its medical applications S. Maikap
2016-09 期刊論文 Detection of pH and enzyme free H2O2 sensing mechanism by using GdOx membrane in electrolyte insulator semiconductor structure P. Kumar, S. Maikap, J. T. Qiu, S. Jana, A. Roy, K. Singh, H. M. Cheng, M. T. Chang, R. Mahapatra, H. C. Chiu, and J. R. Yang Nanoscale Research Letters
2016-09 期刊論文 Highly reliable label free detection of urea/glucose and sensing mechanism using SiO2 and CdSe/ZnS nanoparticles in electrolyte insulator semiconductor structure P. Kumar, S. Maikap, K. Singh, S. Chatterjee, Y. Y. Chen, H. M. Cheng, R. Mahapatra, J. T. Qiu, and J. R. Yang Journal of The Electrochemical Society
2016-07 期刊論文 Temperature dependent non linear resistive switching characteristics and mechanism using a new W/WO3/WOx/W structure S. Chakrabarti, S. Samanta, S. Maikap, S. Z. Rahaman, and H. M. Cheng Nanoscale Research Letters
2016-01 期刊論文 Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure D. Jana, S. Samanta, S. Maikap, and H. M. Cheng Applied Physics Letters
2016-01 研討會論文 IrOx nanostructure for controlling resistive switching memory and breast cancer detection M. Dutta, P. Kumar, G. Sreekanth, and S. Maikap
2015-12 研討會論文 Breast cancer detection using iridium -oxide/SiO2/Si capacitor P. Kumar and S. Maikap
2015-12 研討會論文 Cross-point resistive switching memory devices for bio medical applications”, 1 S. Maikap, P. Kumar, G. Sreekanth, S. Samanta, S. Chakrabarti, and D. Jana
2015-11 研討會論文 CMOS compatible SiO2 membrane for enzyme based acetylcholine sensing K. Singh, P. Kumar, S. Chatterjee, and S. Maikap
2015-11 研討會論文 Comparison of SiO2 and Cu/SiO2 based sensors for detection of tributyrin S. Chatterjee, P. Kumar, K. Singh, and S. Maikap
2015-11 研討會論文 Observation of cone shaped silicon nanowires by chemical etching method A. Roy, S. Chakrabarti, and S. Maikap
2015-11 研討會論文 Resistive switching characteristics using a new Cr/BaTiO3/ TiN structure Zongyi Wu, S. Samanta, D. Jana, S. Maikap
2015-11 研討會論文 Resistive switching memory characteristics using a new Ir/SiOx/TiN structure B. L. You, S. Roy, S. Samanta, S. Maikap
2015-11 研討會論文 Switching mechanism for W/Ta2O5/TiN resistive RAM S. Chakrabarti, S. Samanta, D. Jana, and S. Maikap
2015-10 期刊論文 Resistive and new optical switching memory characteristics using thermally grown Ge0.2Se0.8 film in Cu/GeSex/W structure D. Jana, S. Chakrabarti, S. Z. Rahaman, and S. Maikap Nanoscale Research Letters
2015-09 期刊論文 Energy band alignments Al2O3-HfO2/Al2O3 nanolaminates/SiO2/p type Si structures A. Rifai, S. Maikap, and Y. Nakamura J. Vac. Sci. Technol
2015-08 期刊論文 Observation of resistive switching memory by reducing device size in a new Cr/CrOx/TiOx/TiN structure D. Jana, S. Samanta, S. Roy, Y. F. Lin, and S. Maikap Nano-Micro Lett.
2015-04 期刊論文 Conductive bridging random access memory: challenges and opportunity for 3D architecture D. Jana, S. Roy, R. Panja, M. Dutta, S. Z. Rahaman, R. Mahapatra, and S. Maikap Nanoscale Research Letters
2015-04 研討會論文 Prospective and challenges of RRAM devices S. Maikap, S. Chakrabarti, and D. Jana
2015-03 期刊論文 Improved resistive switching phenomena and mechanism using CuAl alloy in a new Cu:AlOx/TaOx/TiN structure S. Roy, S. Maikap, G. Sreekanth, M. Dutta, D. Jana, Y.Y. Chen, and J.R. Yang Journal of Alloys and Compounds
2014-12 期刊論文 Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application R. Panja, S. Roy, D. Jana and S. Maikap Nanoscale Research Letters
2014-12 期刊論文 RRAM characteristics using a new Cr/GdOx/TiN structure D. Jana, M. Dutta, S. Samanta and S. Maikap Nanoscale Research Letters
2014-12 研討會論文 Challenges and opportunities of resistive random access memory S. Maikap
2014-12 研討會論文 Enhanced CBRAM characteristics using Cu nano layer in a novel W/Cu/Al2O3/TiN structure R. Panja, D. Jana and S. Maikap
2014-12 研討會論文 Highly uniform and robust retention under 30 µA current operation by inserting ultrathin Al2O3 layer in TaOx based RRAM S. Samanta, D. Jana, S. Chakrabarti, M. Dutta, S. Roy, R. Mahapatra, S. Maikap, W. S. Chen, F. T. Chen, and M. J. Tsai
2014-12 研討會論文 Robust data storage capability and improved device uniformity using optimize thickness of Al interfacial layer in novel W/Al/TaOx/TiN RRAM at 30 µA current compliance” S. Samanta, S. Chakrabarti, D. Jana, R. Mahapatra, and S. Maikap
2014-11 期刊論文 Device size dependent improved resistive switching memory performance using W/TiN contact A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, T.-C. Tien, C. S. Lai, and M.-J. Tsai IEEE Transactions on Nanotechnology
2014-11 研討會論文 Fabrication and characterization of vertical 20 nm RRAM using novel Ir(20 nm)/AlOx/W cross point architecture D. Jana, A. Prakash, S. Chakrabarti and S. Maikap
2014-11 研討會論文 Improved switching characteristics using CuAl alloy in Cu/CuAl/Ta2O5/TiN CBRAM device S. Roy, G. Sreekanth, M. Dutta, D. Jana, Y. Y. Chen, J. R. Yang and S. Maikap
2014-11 研討會論文 Long data retention and improved device uniformity using a new W/Al2O3/TaOx/TiN RRAM at 30 µA operating current S. Samanta, S. Chakrabarti, D. Jana, M. Dutta, S. Roy, R. Mahapatra and S. Maikap
2014-10 期刊論文 Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface A. Prakash, S. Maikap, H. C. Chiu, T. C. Tien, and C. S. Lai Nanoscale Research Letters
2014-07 期刊論文 Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture S. Maikap, R. Panja, and D. Jana Nanoscale Research Letters
2014-06 期刊論文 Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure S. Maikap, D. Jana, M. Dutta and A. Prakash Nanoscale Research Letters
2014-06 研討會論文 Memory properties of atomic layer-deposited Al2O3, HfAlO, Al2O3/HfO2 nanolaminates for nonvolatile memory application A. Rifai, S.Maikap, D.Jana, P.Kumar, andY.Nakamura
2014-06 研討會論文 Sidewall sub 20 nm resistive random access memory using AlOx switching material in W/AlOx/Ir structure D. Jana, A. Prakash and S. Maikap
2014-06 研討會論文 Urea and glucose sensing using gold nanoparticles P. Kumar, K. Singh and S. Maikap
2014-05 研討會論文 Charge trapping characteristics of atomic layer deposited HfO2/Al2O3 nanolaminates for nonvolatile memory application A. Rifai, S. Maikap, D. Jana, P. Kumar, and Y. Nakamura
2014-05 研討會論文 Device size dependant resistive switching memory characteristics of W/TaOx/TiN RRAM devices S. Samanta, D. Jana, M. Dutta, A. Prakash and S. Maikap
2014-05 研討會論文 Electron beam induced curved TiO2 film during the observation of transmission electron microscopy Y. Y. Chen, D. Jana, Y. W. Chen, S. Maikap and J. R. Yang
2014-05 研討會論文 Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs S. Chakrabarti, D. Jana, M. Dutta and S. Maikap, Y.Y. Chen and J.R. Yang
2014-05 研討會論文 Memory characteristics and investigation of switching mechanism by simulation in W/IL/TaOx/TiN structure S. Chakrabarti, D. Jana, M. Dutta, S. Maikap, Y. Y. Chen and J. R. Yang
2014-05 研討會論文 Potentiometric glucose sensor using CdSe/ZnS quantum dots P. Kumar and S. Maikap
2014-05 研討會論文 Resistive random access memory characteristics using novel W/HfOx/TiN structure M. Dutta, D. Jana, P. Kumar, Y.Y. Chen, S. Maikap and J. R. Yang
2014-05 研討會論文 Resistive switching characteristics using Cu/AlOx/TiN CBRAM devices R. Panja, D. Jana, S. Maikap, Y.Y. Chen and J. R. Yang
2014-05 研討會論文 Resistive switching phenomena using Cu/Ta2O5 /W structure and impact of 1T1R configuration S. Roy, D. Jana, A. Prakash and S. Maikap
2014-04 期刊論文 Time dependent pH phenomena using Cde/ZnS quantum dots in EIS structure P. Kumar, S. Maikap, A. Prakash, and T. C. Tien Nanoscale Research Letters
2014-04 研討會論文 Low current cross point memory using gadolinium oxide switching material D. Jana, S. Maikap, Y. Y. Chen and J. R. Yang
2014-01 期刊論文 Enhanced resistive switching phenomena using low positive voltage format and self compliance IrOx/GdOx/W cross point memories D. Jana, S. Maikap, A. Prakash, Y. Y. Chen, H. C. Chiu and J. R. Yang Nanoscale Research Letters
2013-12 期刊論文 Comparison of resistive switching characteristics using copper and aluminum electrodes on the GeOx/W cross point memories S. Z. Rahaman and S. Maikap Nanoscale Research Letters
2013-12 期刊論文 Self compliance improved resistive switching using Ir/TaOx/W cross point memory A. Prakash, D. Jana, S. Samanta, and S. Maikap Nanoscale Research Letters
2013-12 研討會論文 GeOx based nanoscale resistive switching memories S. Maikap and D. Jana
2013-12 研討會論文 TaOx based nanoscale resistive switching memory using cross-point architecture S. Maikap and A. Prakash
2013-10 期刊論文 TaOx-based resistive switching memories: Prospective and challenges A. Prakash, D. Jana, and S. Maikap Nanoscale Research Letters
2013-09 期刊論文 Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials A. Prakash, S. Maikap, W. Banerjee, D. Jana, and C. S. Lai Nanoscale Research Letters
2013-05 期刊論文 Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration A. Prakash, S. Maikap, S. Z. Rahaman, S. Majumdar, S. Manna, and S. K. Ray Nanoscale Research Letters
2013-04 研討會論文 Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M.J. Tsai
2013-04 研討會論文 Rough surface improved formation free low power resistive switching memory using IrOx/GdOx/W structure D.Jana, S.Maikap, A. Prakash, H.Y.Lee, W.S. Chen, F.T. Chen, M. J. Kao, and M. J. Tsai
2013-03 期刊論文 Nanocrystals for silicon based light emitting and memory devices S.K. Ray, S. Maikap, W. Banerjee, and S. Das Journal of Physics D: Applied Physics
2013-01 研討會論文 Improved resistance memory characteristics and switching mechanism using TiN electrode on TaOx/W structure A. Prakash and S. Maikap
2012-12 期刊論文 Enhanced nanoscale resistive memory characteristics and switching mechanism using high Ge content Ge0.5Se0.5 solid electrolyte S. Z. Rahaman, S. Maikap, A. Das, A. Prakash, Y. H. Wu, C. S. Lai, T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Tsai, and L. B. Chang Nanoscale Research Letters
2012-08 期刊論文 Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai Applied Physics Letters
2012-04 期刊論文 Improvement uniformity of resistive switching parameters by selecting the electroformation polarity in IrOx/TaOx/WOx/W structure A. Prakash, S. Maikap, C. S. Lai, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai Japanese Journal of Applied Physics
2012-03 期刊論文 Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. Chen, T. C. Tien, and M. J. Tsai Journal of Applied Physics
2012- 期刊論文 Excellent resistive memory characteristics and switching mechanism using Ti nanolayer at the Cu/TaOx interface S. Z. Rahaman, S. Maikap, T. C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai Nanoscale Research Letters
2011-12 期刊論文 Improved resistive switching memory characteristics using core shell IrOx nano dots in Al2O3/WOx bilayer structure W. Banerjee, S. Maikap, S. Z. Rahaman, and A. Prakash Journal of The Electrochemical Society
2010-12 期刊論文 Improved bipolar resistive switching memory using W/TaOx/W structure A. Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M. J. Tsai, and M. J. Kao Advanced Materials Research
2010-03 期刊論文 Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se 0.6 solid electrolyte S. Z. Rahaman, S. Maikap, H. C. Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao and M. J. Tsai Electrochemical and Solid State Lett
2010-03 期刊論文 Characteristics of pH sensors fabricated by using protein mediated CdSe/ZnS quantum dots S. Maikap, A. Prakash, W. Banerjee, Anirban Das and C. S. Lai Microelectronics Reliability
2010-02 期刊論文 High Ge content of SiGe Channel pMOSFETs on Si (110) surfaces M. H. Lee, S. T. Chang, S. Maikap, C. Y. Peng, and C. H. Lee IEEE Electron Dev. Lett.
2010-02 期刊論文 Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid electrolyte S. Z. Rahaman and S. Maikap Microelectronics Reliability
2009-12 研討會論文 A fine nano layer (nanocrystal) coating by atomic layer deposition S. Maikap and Atanu Das
2009-12 研討會論文 A novel resistive switching memory using high-k Ta2O5 films A. Prakash and S. Maikap
2009-12 研討會論文 High-k Ta2O5 thin films with IrOx metal electrode for resistive memory applications S. Maikap, C. I. Lin, S. Z. Rahaman and W. Banerjee
2009-12 研討會論文 Nanoscale nonvolatile memory characteristics of IrOx metal nanocrystals with double layers W. Banerjee, S. Maikap, W. C. Li, and J. R. Yang
2009-12 研討會論文 Novel high-k Ta2O5 resistive memory switching using IrOx metal electrode C. I. Lin, A. Prakash and S. Maikap
2009-12 研討會論文 Protein mediated gold nanocrystals for non-volatile memory applications Anirban Das, A. Prakash and S. Maikap
2009-12 研討會論文 Protein mediated gold nanocrystals for pH sensors Anirban Das, A. Prakash, S. Maikap, and C. S. Lai
2009-11 研討會論文 Double layers of IrOx metal nanocrystals for nanoscale nonvolatile flash memory device applications W. Banerjee, S. Maikap, W. C. Li, T. C. Tien, and J. R. Yang
2009-11 研討會論文 Low current operation of resistive switching memory using Au/Cu/Ge0.2Se0.8/W structure S. Z. Rahaman, S. Maikap, M. J. Tsai, and M. J. Kao
2009-11 研討會論文 Low power operation of resistive switching memory using novel IrOx/SrTiOx/W structure K C. Liao, A. Prakash, and S. Maikap
2009-11 研討會論文 pH sensor using protein mediated CdSe/ZnS quantum dots Anirban Das, S. Maikap, and C. S. Lai
2009-10 期刊論文 Ruthenium oxide metal nanocrystal capacitors with high-k dielectric tunneling barriers for nanoscale nonvolatile memory device applications Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, and M.-J. Tsai Microelectronics Engineering
2009-10 研討會論文 Formation free resistive switching memory device using Ge0.4Se0.6 solid electrolyte S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, and M. J. Tsai
2009-09 研討會論文 Low current (5 pA) resistive switching memory using high-k Ta2O5 solid electrolyte S. Maikap, S. Z. Rahaman, T. Y. Wu, F. Chen, M. J. Kao, and M. J. Tsai
2009-08 研討會論文 High-k Hf based nanocrystal memory capacitors with IrOx metal gate for NAND application W. Banerjee and S. Maikap
2009-07 期刊論文 Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS T. C. Tien, L. C. Lin, L. S. Lee, C. J. Hwang, S. Maikap, and Y. M. Shulga J. Mater. Sci: Mater. Electron
2009-07 研討會論文 Memory characteristics of IrOx metal nanocrystals embedded in high-k Al2O3 films with IrOx metal gate S. Maikap, W. Banerjee, Anirban Das, W. C. Li, and J. R. Yang
2009-07 研討會論文 pH sensor using protein mediated gold nanocrystal array Amit Prakash, Anirban Das, S. Maikap, and C. S. Lai
2009-06 研討會論文 IrOx metal nanocrystal flash memory device with IrOx metal gate for NAND application W. Banerjee, S. Maikap, W. C. Li, T.C. Tien, and J. R. Yang
2009-05 期刊論文 Physical and memory characteristics of atomic layer deposited high-k HfAlO nanocrystal capacitors with IrOx metal gate A. Das, S. Maikap, W. C. Li, L. B. Chang, and J. R. Yang Jpn. J. Appl. Phys.
2009-05 研討會論文 Cu chain formation in Cu/Ta2O5/TiN resistive switching memory Y. R. Tsai, S. Z. Rahaman, and S. Maikap
2009-05 研討會論文 High-k HfAlOx single layer nanocrystal memory capacitors for nanoscale NAND application W. C. Li, S. Maikap, and J. R. Yang
2009-05 研討會論文 Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, H. C. Chiu
2009-05 研討會論文 Memory characteristics of IrOx metal nanocrystals with IrOx metal gate S. Maikap, W. Banerjee, W. C. Li, and J. R. Yang
2009-04 研討會論文 Low Current and Voltage Resistive Switching Memory Device Using Novel Cu/Ta2O5/W Structure S. Z. Rahaman, S. Maikap, C.-H. Lin, T.-Y. Wu, Y. S. Chen, P.-J. Tzeng, F. Chen, C. S. Lai
2009-03 研討會論文 High-k Ta2O5 film for resistive switching memory application Y.-R. Tsai, K.-C. Liao and S. Maikap
2009-01 期刊論文 High-k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nanomixtures S. Maikap*, Atanu Das, T.-Y. Wang, T.-C. Tien, and L.-B. Changa Journal of The Electrochemical Society
2008-12 期刊論文 TiN nanocrystal flash memory devices S. Maikap*, P.J. Tzeng , C.H. Lin, Ting-Yu Wang, H.Y. Lee, Sheng-Shiung Tzeng, C.C. Wang Int. J. Nanomanufacturing
2008-12 專書論文 Dilute carbon alloy group IV semiconductor heterostructures for advanced MOSFET devices S. K. Ray, R. Mahapatra, G. S. Kar, and S. Maikap
2008-11 研討會論文 Characteristics of atomic layer deposited high-k HfAlOx nanocrystals in n-Si/SiO2/HfO2/HfAlOx/Al2O3/Pt memory capacitors 麥凱
2008-11 研討會論文 Charge storage characteristics of ALD high-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices for nanoscale NAND applications 麥凱
2008-11 研討會論文 Memory characteristics of atomic layer deposited HfO2 nanocrystal capacitors with IrOx metal gate 麥凱
2008-11 研討會論文 Nonvolatile memory characteristics of ALD RuOX metal nanocrystals in the n-Si/SiO2/HfO2/RuOX/Al2O3/IrOX capacitors 麥凱
2008-11 研討會論文 Novel IrOx metal nanocrystal memory device with IrOx metal gate 麥凱
2008-11 研討會論文 Novel resistive memory device using Cu/GeSe/W structure with low current operation 麥凱
2008-10 期刊論文 Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers D. Panda, S. Maikap, A. Dhar, and S. K. Ray Electrochemical and Solid State Lett.
2008-10 期刊論文 Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers 麥凱 Electrochemical and Solid-State Lett.
2008-10 研討會論文 Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers 麥凱
2008-10 研討會論文 Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications 麥凱
2008-09 期刊論文 Nanoscale (EOT=5.6 nm) nonvolatile memory characteristics using n Si/SiO2/HfAlO nanocrystals/Al2O3/Pt capacitors SMaikap*, S Z Rahaman and T C Tien Nanotechnology
2008-09 研討會論文 Nanoscale (EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited high-k HfAlO nanocrystals 麥凱
2008-09 研討會論文 Resistive switching memory using high-k Ta2O5 films 麥凱
2008-08 期刊論文 Studying the impact of carbon on device performance for strained Si MOSFETs 麥凱 Thin Solid Film.
2008-07 期刊論文 The role of carbon on performance of strained-Si:C surface channel NMOSFETs 麥凱 Solid-Stale Electron.
2008-06 研討會論文 Flash Memory Device Characteristics of Atomic Layer Deposited Crystallite Al2O3 films with Large Memory Window and Long Retention 麥凱
2008-05 研討會論文 Memory characteristics of high-k HfAlO nano-mixtures 麥凱
2008-05 研討會論文 Nanoscale nonvolatile memory devices using high-k HfO2/TiO2 multilayers 麥凱
2008-05 研討會論文 RuO2 metal nanocrystal memory prepared at high temperature 麥凱
2008-04 研討會論文 Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating 麥凱
2008-04 其他 Method of fabricating metal compound dots dielectric piece C. H. Lin, P. J. Tzeng, and S. Maikap
2008-03 期刊論文 Low Voltage Operation of High-k HfO2/TiO2/Al2O3 Single Quantum Well for Nanoscale Flash Memory Device Applications 麥凱 Jpn. J. Appl. Phys.
2008-03 期刊論文 Short channel effect improved strained Si:C source/drain PMOSFETs 麥凱 Appl. Surf. Sci.
2008-02 期刊論文 Memory Characteristics of Atomic-Layer-Deposited High-k HfAlO Nanocrystal Capacitors 麥凱 Electrochemical and Solid-State Letters
2008--- 專書論文 Dilute carbon alloy group-IV semiconductor heterostructures for advanced MOSFET devices 麥凱
2007-07 期刊論文 Charge storage characteristics of atomic layer deposited RuOx nanocrystals 麥凱 Appl. Phys. Lett.
2007-04 研討會論文 High k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices 麥凱
2007--- 期刊論文 Band offsets and charge storage characteristics of atomic layer deposited high κ HfO2/TiO2 multilayers 麥凱 Appl. Phys. Lett.
2007--- 期刊論文 Characteristics of strained germanium p-and n channel field effect transistors on Si (111) substrate 麥凱 Semicond. Sci. Technol.
2007--- 期刊論文 Charge trapping characteristics of atomic layer deposited HfO2 films with Al2O3 as a blocking oxide for high density nonvolatile memory device applications 麥凱 Semicond. Sci.Technol.
2007--- 期刊論文 HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high performance nonvolatile memory device applications 麥凱 Jpn. J. Appl. Phys.
2007--- 期刊論文 Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si 麥凱 Appl. Phys. Lett.
2007--- 期刊論文 Low power switching of nonvolatile resistive memory using hafnium oxide 麥凱 Jpn. J. Appl. Phys.
2007--- 期刊論文 Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors 麥凱 Appl. Phys. Lett.
2007--- 期刊論文 TiO2 nanocrytal prepared by atomic layer deposition system for nonvolatile memory application 麥凱 Jpn. J. Appl. Phys.
2007--- 研討會論文 Effect of nano-grain on the memory characteristics of high- HfAlO charge trapping layers for nano-scale nonvolatile memory device applications 麥凱
2007--- 研討會論文 Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers 麥凱
2006-12 期刊論文 Hole confinement at Si/SiGe heterojunction of strained-Si N- and PMOS devices J. Y. Wei, S. Maikap, M. H. Lee, C. C. Lee and C. W. Liu Solid-State Electron.
2006-12 期刊論文 The effect of strain on p channel metal oxide semiconductor field effect transistor current enhancement using stress modulation silicon nitride films C. H. Lin, Z. Pei, S. Maikap, C. C. Wang, C. S. Lu, L. S. Lee and M. J. Tsai Appl. Phys. Lett.
2006-09 研討會論文 High-k HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang,. L. S. Lee, J. R. Yang and
2006-09 研討會論文 Low power of nonvolatile hafnium oxide resistive memory H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai
2006-09 研討會論文 TiO2 nanocrystal preapared by ALD system at elevated temperature C. H. Lin, C. C. Wang, P. J. Tzeng, S. Maikap, H. Y. Lee, L. S. Lee and M. J. Tsai
2006-09 研討會論文 Very low voltage operation of Al2O3/HfO2/TiO2/Al2O3 single quantum well memory with good retention S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, L. S. Lee, J. R. Yang, and M.-J. Tsai
2006-08 期刊論文 Characteristics of ZrO2 gate dielectrics on O2 and N2O plasma treated partially strain compensated Si0.69Ge0.3C0.01 layers R. Mahapatra, S. Maikap, Je Hun Lee and S. K. Ray J. Appl. Phys.
2006--- 期刊論文 Ultrathin gate dielectrics for silicon heterostucture MOSFET devices S. K. Ray, R. Mahapatra, and S. Maikap Journal of Material Science: Materials in Electronics
2006--- 研討會論文 High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, T. C. Tien, S.
2005-09 期刊論文 Abnormal hole mobility of biaxial strained-Si M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu J. Appl. Phys.
2005-09 期刊論文 The impact of Hf metal pre-deposition on the physical and electrical properties of ultrathin HfO2 films on Si0.9954C0.0046/Si heterolayers K. C. Liu, S. Maikap, C. H. Wu, Y. S. Chang, and P. S. Chen Semicond. Sci. Technol.
2005-06 期刊論文 Physical and reliability characteristics of Hf based gate dielectrics on strained SiGe MOS devices P. J. Tzeng, S. Maikap, C. S. Liang, P. S. Chen, and L. S. Lee IEEE Trans. Device and Material Reliability
2005-05 期刊論文 Mobility-Enhancement Technologies C. W. Liu, S. Maikap, and C. -Y. Yu IEEE Circuits and Devices Magazine
2005-04 期刊論文 Characteristics of ultrathin Hf silicate gate dielectrics on Si0.9954C0.0046/Si heterolayers K. C. Liu, S. Maikap, and P. S. Chen Jpn. J. Appl. Phys.
2005-02 期刊論文 Effects of interfacial NH3/N2O plasma treatment on the structural and electrical properties of ultrathin HfO2 gate dielectrics on p-Si substrates S. Maikap, J. H. Lee, R. Mahapatra, S. Pal, Y. S. No, W. K. Choi, S. K. Ray, and D. Y. Kim Solid-State Electron.
2005-02 期刊論文 MBE-grown high-k gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics W. C. Lee, Y. J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S J. Crystal. Growth
2005--- 期刊論文 Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers R. Mahapatra, S. Maikap, A. Dhar, B. K. Mathur, and S. K. Ray Ferroelectrics
2005--- 期刊論文 Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray Solid-State Electron.
2004-11 期刊論文 Evidence of Si/ SiGe heterojunction roughness scattering C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C. Y. Yu, J. Y. Wei, S. Maikap Appl. Phys. Lett.
2004-10 期刊論文 Ge outdiffusion effect on flicker noise in strained-Si NMOSFETs W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen IEEE Electron Dev. Lett.
2004-10 期刊論文 Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure S. K. Ray, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya, and J. H. Lee Materials Science in Semiconductor Processing
2004-07 期刊論文 Mechanically strained Si/SiGe HBTs F. Yuan, S. R. Jan, S. Maikap, Y. H. Liu, C. S. Liang, and C. W. Liu IEEE Electron Dev. Lett.
2004-02 期刊論文 Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystals trilayer structure K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A Dhar, H. N. Acharya, S. Maikap, Je-Hun Lee and S Appl. Phys. Lett.
2004-01 期刊論文 Mechanically strained strained-Si NMOSFETs S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu IEEE Electron Dev. Lett.
2004-01 期刊論文 Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained Si0.74Ge0.26/Si heterolayers S. Maikap, Je Hun Lee and Doh Y. Kim, R. Mahapatra, S. K. Ray, Jae Hoon Song, Y. S. No and Won Kook J. Vac. Sci. Technol. B
2004--- 期刊論文 Effect of temperature on the electrical properties of plasma grown oxides on Si0.993C0.007 layers R. Mahapatra, G. S. Kar, S. K. Ray, and S. Maikap J. Mat. Sci.: Mat. Electron.
2004--- 期刊論文 Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process S. K. Samanta, S Chatterjee, S. Maikap and C. K. Maiti Solid-State Electron.
2004--- 研討會論文 Packagestrain enhanced device and circuit performance S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang and C. W. Liu
2003-12 期刊論文 Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates S. Chatterjee, S. Nandi, S. Maikap, S. K. Samanta and C. K. Maiti Semicond. Sci. Technol.
2003-12 期刊論文 Metal-oxide-semiconductor structure with Ge nanocrystals for memory device applications K. Das, S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray IEE Electron. Lett.
2003-09 期刊論文 Structural and electrical characteristics of the interfacial layer of ultra-thin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, Doh Y. Kim, D. Bhattacharya and S. K. Ray J. Vac. Sci. Technol. A
2003-07 期刊論文 Characteristics of ultra-thin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers Je-Hun Lee, S. Maikap, Doh. Y. Kim, R. Mahapatra, S. K. Ray, Y. S. Noh and W.-K. Choi Appl. Phys. Lett.
2003-06 期刊論文 Effects of interfacial nitrogen on the structural and electrical properties of ultra thin ZrO2 gate dielectrics on partially strain compensated SiGeC/Si heterolayers R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, B. K. Mathur, N. M. Hwang, D. Y. Kim and S Appl. Phys. Lett.
2003-04 期刊論文 Electrical and interfacial characteristics of ultra-thin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure R. Mahapatra, Je Hun Lee, S. Maikap, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur and S. Appl. Phys. Lett.
2003-03 期刊論文 Interface properties and reliability of ultrathin oxynitride films grown on strained- Si1-xGex substrates S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti J. Appl. Phys.
2003--- 期刊論文 Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C.K. Maiti, S. Maikap, W.-K. Choi Microelectron. Engg.
2003--- 期刊論文 Hafnium oxide gate dielectric for strained-Si1-xGex C. K. Maiti, S. Maikap, S. Chatterjee, S. K. Nandi and S. K. Samanta Solid-State Electron.
2003--- 研討會論文 Comprehensive low frequency and RF noise characteristics in strained Si NMOSFETs M. H. Lee, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu,
2002-10 期刊論文 Investigations on Ta2O5/ZnO insulator-semiconductor interfaces S. Nandi, Won-Kook Choi, Young S. Noh, Min S. Oh, S. Maikap, Nong M. Hwang, Doh-Y. Kim, S. Chatterje IEE Electron. Lett.
2002-08 期刊論文 Electrical properties of plasma grown gate oxides on tensile strained Si1-yCy layers R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray IEE Electron. Lett.
2002-07 期刊論文 Series resistance and mobility degradation factor in C incorporated SiGe heterostructure p MOSFETs G. S. Kar, S. Maikap, S. K. Banerjee, S. K. Ray Semicond. Sci. Technol.
2002-01 期刊論文 Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers G. S. Kar, S. Maikap, S. K. Banerjee and S. K. Ray IEE Electron. Lett.
2002--- 期刊論文 Effective mobility and alloy scattering in strain compensated SiGeC inversion layer G. S. Kar, S. Maikap, S. K. Ray, S. K. Banerjee and N. B. Chakrabarti Semicond. Sci. Technol.
2002--- 期刊論文 Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers S. K. Samanta, S. Maikap, S.Chatterjee, C.K.Maiti Solid-State Electron.
2001-07 期刊論文 Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers S. K. Samanta, S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti Semicond. Sci. Technol.
2001-01 期刊論文 Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers S. Maikap, S. K. Ray, S. K. Banerjee and C. K. Maiti Semicond. Sci. Technol.
2001--- 期刊論文 Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers S. K. Ray, S. Maikap, S. K. Samanta, S. K. Banerjee and C. K. Maiti Solid-State Electron.
2001--- 期刊論文 Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti Solid-State Electron.
2001--- 期刊論文 Schottky diode on Si/SiGeC quantum well heterostructures for long wavelength IR detector G. S. Kar, S. Maikap, A. Dhar and S. K. Ray Proc. of SPIE Int. Soc, Opt. Eng
2001--- 期刊論文 Technology CAD of SiGe-HFETs S. Maikap, B. Senapati and C. K. Maiti Defnce Science Journal
2000-09 期刊論文 Effects of NO-plasma treatment on the electrical properties of TEOS-deposited silicon dioxides on strained- Si1-xGex layers B. Senapati, S. Samanta, S. Maikap, L. K. Bera and C. K. Maiti Appl. Phys. Lett.
2000--- 期刊論文 Effects of O2/N2O-plasma treatment on nitride films on strained-Si L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti Solid-State Electron.
2000--- 期刊論文 Electrical characterization of ultrathin gate oxides on Si/SiGeC/Si quantum well heterostructures S. Maikap, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti Semicond. Sci. Technol.
2000--- 期刊論文 Electrical characterization of Si/ Si1-xGex/Si quantum well heterostuctures using a MOS capacitor S. Maikap, L. K. Bera, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti Solid-State. Electron.
2000--- 期刊論文 Growth of silicon-germanium alloy layers C. K. Maiti, L. K. Bera, S. Maikap, S. K. Ray, R. Kesavan, V. Kumar and N. B. Chakrabarti Defence Science Journal
1999-08 期刊論文 NO/O2/NO plasma grown oxynitride films on strained-Si1-xGex S. Maikap, L. K. Bera, S. K. Ray and C. K. Maiti IEE Electron. Lett.