| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2015-02 |
期刊論文
|
The Capacitance Modulated by the Convolution between
Optical and Electrical Signals Using the GaAsN/GaAs
Quantum Well |
Jia-Feng Wang, Chin-Pin Huang, Chen-Hao Lin, and Jenn-Fang Chen |
International Journal of Engineering and Technology
|
| 2014-12 |
期刊論文
|
Sweeping-rate-dependent photocurrent of GaAs Schottky diode
with strain relaxed InAs quantum dots |
Jia-Feng Wang*, Cheng-Lu Lin, Sheng-Shiang Pan, Chih-Pin Huang, Chao-Sheng Hsieh, and Jenn-Fang Chen |
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|
| 2014-05 |
期刊論文
|
Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer |
Tung-Yuan Yu, Fu-Ming Pan,*, Cheng-Yi Chang, Tien Hua, Jenn-Fang Chen,
Jia-Feng Wang, Cheng-Lu Lin, Tsung-Han Chen, Te-Ming Chen |
Current Applied Physics
|
| 2013-10 |
期刊論文
|
Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal soilds |
S.C. Chiu, J. S. Jhang, J. F. Chen, J. Fang, W. B. Jian |
Physical Chemistry Chemical Physics
|
| 2012-12 |
期刊論文
|
Exploration of water jet generated by Q-switched laser induced water breakdown with different depths beneath a flat free surface |
Ross C. C. Chen, Y. T. Yu, K. W. Su, J. F. Chen and Y. F. Chen |
Optics Express
|
| 2012-08 |
期刊論文
|
Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: from depletion mode to enhancement mode |
X. Rong, W. H. Kuo, C. W. Hu, S. F. Lin, and J. F. Chen |
Applied Physics Letters
|
| 2012-04 |
期刊論文
|
Dielectrophoretic Placement of Quasi-Zero-, One-, and Two-Dimensional Nanomaterials into Nanogap for Electrical Characterizations |
Y. F. Lin, S. C. Chiu, S. T. Wang, S. K. Fu, C. H. Chen, W. J. Xie, H. H. Yang, C. S. Hsu, J. F. Chen, X. Z. Z. Liu, J. Fang, and W. B. Jian |
Electrophoresis
|
| 2012-01 |
期刊論文
|
How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness? |
J. F. Chen, Y. C. Lin, C. H. Chiang, R. C. C. Chen, Y. F. Chen, Y. H. Wu, and L. Chang |
Journal of Applied Physics
|
| 2011-12 |
期刊論文
|
Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate |
Y. K. Fu, Y. H. Lu, X. Rong, C. H. Chao, Y. K. Su, and J. F. Chen |
IEEE Photonics technology letters
|
| 2011-10 |
期刊論文
|
Electron emission properties of GaAsN/GaAs quantum well containing N-related localized sates: the influence of illumination |
M. C. Hsieh, J. F. Wang, Y. S. Wang, C. H. Yang, and J. F. Chen |
Japanese Journal of Applied Physics
|
| 2011-10 |
期刊論文
|
Role of N-related Localized states in the electron emission properties of a GaAsN quantum well |
M. C. Hsieh, J. F. Wang, Y. S. Wang, C. H. Yang, R. C. C. Chen, C. H. Chiang, Y. F Chen, and J F Chen |
Japanese Journal of Applied Physics
|
| 2011-08 |
期刊論文
|
Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes |
Y. S. Wang, N. C. Chen, C. Y. Lu, and J. F. Chen |
Physica B
|
| 2011-07 |
期刊論文
|
Electron emission properties of nitrogen-induced localized defects in InAsN/GaAs quantum dots |
C. H. Yang, M. C. Hsieh, C. W. Wu, Y. T. Chang, Y. H. Wu, L. Chang, and J. F. Chen |
Japanese Journal of Applied Physics
|
| 2011-06 |
期刊論文
|
Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process |
K. Fu. B. C. Chen, Y. H. Fang, R. H. Jiamg, Y. H. Lu, R. Xuan, K. F. Huang, C. F. Lin, Y. K. Su, J. F. Chen, and C. Y. Chang |
IEEE Photonics Technology Letters
|
| 2011-04 |
期刊論文
|
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metal organic vapor phase epitaxy |
Y. K. Fu, Y. H. Lu, R. H. Jiang, B. C. Chen, Y. H. Fang, X. Rong, Y. K. Su, C. F. Lin, and J. F. Chen |
Solid-Sate Electronics
|
| 2011-04 |
期刊論文
|
Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony |
C. H. Chiang, Y. H. Wu, M. C. Hsieh, C. H. Yang, J. F. Wang, Ross C. C. Chen, L. Chang, and J. F. Chen |
Applied Surface Science
|
| 2011-03 |
期刊論文
|
Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates |
C. L. Chao. X. Rong, H. H. Yen, C. H. Chiu, Y. H. Fang, Z. Y. Li, B. C. Chen, C. C. Lin, C. H. Chiu, Y. D. Guo, H. C. Kuo, J. F. Chen, and S. J. Cheng |
IEEE Photonics Technology Letters
|
| 2011-03 |
期刊論文
|
The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy |
K. Fu, R. H. Jiang, Y. H. Lu, B. C. Chen, R. Xuan, Y. H. Fang, C. F. Lin, Y. K. Su, and J. F. Chen |
Applied Physics Letters
|
| 2010-10 |
期刊論文
|
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition |
C. H. Chiang, K. M. Chen, Y. H. Wu, Y. S. Yeh, W. I Lee, J. F. Chen, K. L. Lin, Y. L. Hsiao, W. C. Huang, and E. Y. Chang |
Applied Surface Science
|
| 2010-09 |
期刊論文
|
Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer |
J. F. Chen, Ross C. C. Chen, C. H. Chiang, Y. F. Chen, Y. H. Wu, and L. Chang |
Appl. Phys. Lett
|
| 2010-09 |
期刊論文
|
Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots |
J. F. Chen, Ross C. C. Chen, C. H. Chiang, M. C. Hsieh, Y. C. Chang, and Y. F. Chen |
J. Appl. Phys.
|
| 2010-03 |
期刊論文
|
Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy |
M. T. Hsieh, M. H. Ho, K. H. Lin, J. F. Chen, T. M. Chen, and C. H. Chen |
Applied Physics Letter
|
| 2009-09 |
期刊論文
|
Spectral shape and broadening of emission from AlGaInP light-emiting diodes |
N. C. Chen, W. C Lien, Y. K. Yang, C. Shen, Y. S. Wang and J. F. Chen |
Journal of Applied Physics
|
| 2009-07 |
期刊論文
|
Structural and optical properties of buried InAs/GaAs quantum dors in GaAsSb buffer layer |
Y. H. Wu, L. Chang, P. Y. Lin, C. H. Chaing, J. F Chen and T. W. Chi |
Journal of Physics D: Applied Physics
|
| 2009-06 |
期刊論文
|
Study of electrical characterization of 2-methyl-9,10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport material |
M. T. Hsieh, M. H. Ho, K. H. Lin, J. F. Chen, T. M. Chen, and C. H. Chen |
Applied Physics Letters
|
| 2009-03 |
期刊論文
|
Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state |
J. F. Chen, C. H. Yang, R. M. Hsu, and U. S. Wang |
J. Appl. Phys.
|
| 2008-12 |
期刊論文
|
Study of efficient and stable organic light-emitting diodes with 2-methy-9,10-di(2-naphthyl)anthrancene as hole-transport material by admittance spectroscopy |
M. H. Ho, M. Ta. Hsieh, K. H. Lin, T. M. Chen, J. F. Chen and C. H. Chen |
Applied Physics Letters
|
| 2008-11 |
期刊論文
|
Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing |
J. F. Chen, C. C. Yu and C. H. Yang |
Nanotechnology
|
| 2008-11 |
期刊論文
|
Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation |
J. F. Chen, C. H. Yang, Y. H. Wu, L. Chang and J. Y. Chi |
J. Appl. Phys.
|
| 2008-08 |
期刊論文
|
Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n-type dopant |
M. H. Ho, T. M. Chen, M. T. Hsieh, J. F. Chen, S. W. Hwang and F. Chen |
Appl. Phys. Lett.
|
| 2007-05 |
期刊論文
|
Electron-emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure |
J. F. Chen and J. S. Wang |
J. Appl. Phys.
|
| 2007- |
期刊論文
|
Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells |
J. F. Chen, P. C. Hsieh, and R. S. Hsiao, J. S. Wang, and J. Y. Chi |
Nanotechnology
|
| 2007- |
期刊論文
|
Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots |
J. F. Chen, Y. Z. Wang, C. H. Chiang, R. S. Hsiao, Y. H. Wu, L. Chang, J. S. Wang, T W Chi and J. Y. Chi |
Nanotechnology
|
| 2006- |
期刊論文
|
Strain relaxation and induced defects in InAsSb self-assembled quantum dots |
J. F. Chen, R. S. Hsiao, W. D. Huang, Y. H. Wu, L. Chang, J. S. Wang, and J. Y. Chi |
Appl. Phys. Lett.
|
| 2005- |
期刊論文
|
Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling |
J. F. Chen, R. S. Hsiao, Y. P. Chen J. S. Wang, and J. Y. Chi |
Appl. Phys. Lett
|
| 2001-02 |
期刊論文
|
Differential Capacitance Measurements of Relaxation-Induced Defects in InGaAs/GaAs Schottky Diodes |
J. F. Chen, N. C. Chen, J. S. Wang, and Y. F. Chen |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2000-09 |
期刊論文
|
Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
Y. S. Wang, J. F. Chen, P. Y. Wang, and X. J. Guo |
APPLIED PHYSICS LETTERS
|
主要學歷