| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2024-12 |
期刊論文
|
All‐Inorganic Perovskite Quantum‐Dot Optical Neuromorphic Synapses for Near‐Sensor Colored Image Recognition. |
Y.C. Yao, C.J. Lee, Y.J. Chen, J.Z. Feng, H. Oh, C.S. Lue*, J.K. Sheu*, Y.J. Lee* |
Advanced Science(IF:14.3)
|
| 2024-12 |
期刊論文
|
Engineering GaN photoanodes for high-efficiency solar-driven hydrogen production: Bridging longevity and performance in photoelectrochemical energy systems |
S. Kogularasu, I. J. D. Priscillal, G.P. Chang-Chien*, J.K. Sheu* |
International Journal of Hydrogen Energy
|
| 2024-12 |
期刊論文
|
Nanoengineered Electrochemical Sensor for Sensitive Detection of Carbendazim in Environmental Waters Using Er3NbO7/f-CNF Nanocomposite |
Jenisha Daisy Priscillal, Jinn-Kong Sheu*, Sea-Fue Wang* |
Environmental Research
|
| 2024-09 |
期刊論文
|
Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T’-MoTe 2/2H-MoTe 2 heterojunction grown by chemical vapor deposition |
PF Chi, JJ Wang, JW Zhang, YL Chuang, ML Lee*, JK Sheu* |
Nanoscale Horizons(IF:8.0)
|
| 2024-08 |
期刊論文
|
High-responsivity photodetectors made of indium selenide with visible to near-infrared photodetection |
YT Yao, GY Wu, YL Chuang, ML Lee*, CS Lue, CN Kuo, JK Sheu* |
Chinese Journal of Physics
|
| 2024-07 |
期刊論文
|
Large-area and few-layered 1T′-MoTe2 thin films grown by cold-wall chemical vapor deposition |
PF Chi, YL Chuang, Z Yu, JW Zhang, JJ Wang, ML Lee*, JK Sheu* |
Nanotechnology
|
| 2024-06 |
期刊論文
|
Advancements in Electrochemical Biosensing of Cardiovascular Disease Biomarkers |
Kogularasu Sakthivel, Wan-Ching Lin, Yen-Yi Lee, Bo-Wun Huang*, Yung-Lung Chen, Guo-Ping Chang-Chien*, Jinn-Kong Sheu* |
Journal of Materials Chemistry B
|
| 2024-05 |
期刊論文
|
Thermally Oxidized AlxGa2–xO3/n-Al0.6Ga0.4N:Si Unipolar Resistive Random-Access Memory |
TY Wang, WC Lai, QJ Xie, SP Chang, CH Kuo, JK Sheu |
ACS Applied Electronic Materials
|
| 2024-01 |
期刊論文
|
Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs |
B Li, C Mi, JH Kang, H Li, RT Elafandy, WC Lai, JK Sheu, J Han |
Optica
|
| 2024-01 |
期刊論文
|
Unlocking Catalytic Potential: Exploring the Impact of Thermal Treatment on Enhanced Electrocatalysis of Nanomaterials |
K. Sakthivel*, Y.-Y. Lee, B. Sriram*, S.-F. Wang, M. George*, G.-P.. Chang-Chien*, Jinn-Kong Sheu* |
Angew. Chem.Int. Ed.
|
| 2023-09 |
期刊論文
|
Deep eutectic solvent-mediated synthesis of spinel zinc chromite nanoparticles: a simple label-free electrochemical sensor for dopamine and ascorbic acid |
B Sriram, S Kogularasu, SF Wang* and JK Sheu |
ACS Applied Nano Materials
|
| 2023-09 |
期刊論文
|
Seed-Assisted Synthesis of Ni(OH)2 Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting |
YT Yao, TW Huang, YL Chuang, ML Lee*, JK Sheu* |
ACS Applied Energy Materials
|
| 2023-07 |
期刊論文
|
Nanofibers: Empowering Electrochemical Sensors for Reliable Detection of Food and Environmental Toxins |
S. Kogularasu*, Y.Y. Lee, G.P. Chang-Chien*, M. Govindasamy*, J.K. Sheu* |
Journal of The Electrochemical Society,(IF:3.1)
|
| 2023-04 |
期刊論文
|
Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS2/GaN heterojunction |
PJ Wang, CJ Chang, SY Lin, JK Sheu and CK Sun |
Photoacoustics
|
| 2023-02 |
期刊論文
|
Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN pn junction layers |
P.F. Chi, F.W. Lin, M.L. Lee*, J.K. Sheu* |
Journal of Alloys and Compounds(IF:6.2)
|
| 2023-02 |
期刊論文
|
Solar-blind UV Schottky barrier Photodetectors formed by Au/Ni on β-(AlxGa1-x)2O3/AlGaN heterostructures |
Ping-Feng Chi, Wei-Che Chang, Ming-Lun Lee*, Jinn-Kong Sheu* |
Journal of Materials Chemistry C(IF:6.4)
|
| 2023-02 |
期刊論文
|
The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes |
Tien-Yu Wang, Wei-Chih Lai, Qiao-Ju Xie, Shun-Hao Yang, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu |
RSC advances
|
| 2022-11 |
期刊論文
|
Effects of FeOOH Nanofilms on Photoelectrochemical Reaction Using Gallium Nitride as Photoelectrodes |
Y.T. Yao, S. Kogularasu, W.H. Sun, T.W. Huang, M.L. Lee*, J.K. Sheu* |
ACS Applied Energy Materials(IF:6.2)
|
| 2022-11 |
期刊論文
|
Superlattice Stacking by Confinement of the Layered Double Hydroxide/Vanadium Carbide Hybrid Composite. The Effect on Interlayer Anions (SO42–and CO32–) for Comparing the Electrochemical Sensing of a Food Adulterant |
Sakthivel Kogularasu, Balasubramanian Sriram, Sea-Fue Wang, Jinn-Kong Sheu* |
ACS Sustainable Chemistry & Engineering(IF:8.4)
|
| 2022-06 |
期刊論文
|
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer |
Ming- Lun Lee, Shang-Ju Tu, and Jinn-Kong Sheu* |
Physica E: Low-dimensional Systems and Nanostructures(IF:3.369)
|
| 2022-04 |
期刊論文
|
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized AlxGa2–xO3 Sidewalls |
T.Y. Wang, W.C. Lai, S.Y. Sie, S.P. Chang, C.H. Kuo, J.K. Sheu, J.S. Bow |
ACS omega(IF:4.132)
|
| 2022-02 |
期刊論文
|
High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions |
P.F. Chi, F.W. Lin, M.L. Lee, J.K. Sheu* |
ACS Photonics(IF:7.077)
|
| 2022-02 |
期刊論文
|
Improved Performance of GaN Photoelectrodes from the Facile Fabrication of a Binder-Free Catalyst: Ni(OH)2 Nanosheets |
Y.T .Yao, W.H. Liu, S. Kogularasu, M.L. Lee, J.K. Sheu* |
ACS Applied Energy Materials (IF:6.959)
|
| 2022-01 |
期刊論文
|
Flexible multijunction solar cells embedded inside smart dust modules for outdoor applications to Smart Grids |
306. Cheng-Yi Liu, Chun-Kai Huang, Yen-Yu Huang, Kun-Chieh Chang, Kun-Lin Yu, Chien-Hung Chiang, Chun-Guey Wu, Shih-Chang Lee, Wei-Yu Yen, Jinn-Kong Sheu, Jin-Wei Shi |
Applied Energy(IF:10.1)
|
| 2022-01 |
期刊論文
|
Sea-Urchin-Like Bi2S3 Microstructures Decorated with Graphitic Carbon Nitride Nanosheets for Use in Food Preservation |
Sakthivel Kogularasu, Balasubramanian Sriram, Sea-Fue Wang, J.K. Sheu* |
ACS Appl. Nano Materials(IF:6.14)
|
| 2021-11 |
期刊論文
|
Hydrothermal-Dependent Synthesis of Exfoliated Nickel Cobaltite Layers for Simultaneous Determination of IARC Group 2B, 3B Carcinogens |
X.B. Joseph, S. Kogularasu, S.F. Wang*, J.K. Sheu* |
ACS Applied Nano Materials(IF:6.14)
|
| 2021-09 |
期刊論文
|
Effect of KOH-Treatment at Sol-gel Derived NiOx Film on GaN Photoanodes in Hydrogen Generation |
Chun-Lin Su, Kogularasu Sakthivel , Yu-Tsun Yao , Po-Hsun Liao, Ming-Lun Lee*, and Jinn-Kong Sheu* |
ACS Applied Energy Materials(IF:6.959)
|
| 2021-07 |
期刊論文
|
Stable Photoelectrochemical Water Splitting using p-n GaN Junction Decorated with Nickel Oxides as Photoanodes |
Chi Wing Lee , Feng-Wu Lin1, Po-Hsun Liao, Ming-Lun Lee* and Jinn-Kong Sheu* |
Journal of Physical Chemistry C(IF:4.177)
|
| 2021-05 |
期刊論文
|
Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1− XO Films Obtained through Radio-Frequency Magnetron Sputtering |
Wen-Yen Lin, Feng-Tsun Chien, Hsien-Chin Chiu, Jinn-Kong Sheu, Kuang-Po Hsueh, |
Membranes(IF:4.562)
|
| 2021-05 |
期刊論文
|
Scalable and Sustainable Synthetic Assessment between Solid-State Metathesis and Sonochemically derived Electrocatalysts (Strontium Molybdate) for the precise Anti-androgen Bicalutamide (CasodexTM) detection |
Kogularasu Sakthivel, Akilarasan Muthumariappan, Shen-Ming Chen*, Jinn-Kong Sheu* |
Microchemical Journal(IF:5.304)
|
| 2021-05 |
期刊論文
|
Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms |
Kuan-Yu Chou, Chen-Ling Wu, Chih-Chiang Shen, Jinn-Kong Sheu, Chi-Kuang Sun |
Journal of Physical Chemistry C(IF:4.1)
|
| 2020-12 |
期刊論文
|
AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier |
Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Yuh-Renn Wu, Yu-Zung Chiou, Cheng-Huang Kuo, Jinn-Kong Sheu |
Appl. Phys. Lett.
|
| 2020-11 |
期刊論文
|
Cobalt Oxide Nanofilms on n-GaN Working Electrodes for Photoelectrochemical Water Splitting |
Chia-Che Liao, Yu-Tsun Yao, Sakthivel Kogularasu, Po-Hsun Liao, Ming-Lun Lee*, and Jinn-Kong Sheu* |
Journal of Physical Chemistry C(IF:4.126)
|
| 2020-11 |
期刊論文
|
Ultra-short photoacoustic pulse generation through hot electron pressure in two-dimensional electron gas |
Chen-Ling Wu, Vitalyi Gusev, Lung-Han Peng, Jinn-Kong Sheu, Chi-Kuang Sun |
Optics Express
|
| 2020-09 |
期刊論文
|
High-power and single-mode VCSEL arrays with single-polarized outputs by using package-induced tensile strain |
Jin-Wei Shi, Zuhaib Khan, Ray-Hua Horng, Hsiao-Yun Yeh, Chun-Kai Huang, Cheng-Yi Liu, Jie-Chen Shih, Yung-Hao Chang, Jia-Liang Yen, Jinn-Kong Sheu |
Optics Letters
|
| 2020-07 |
期刊論文
|
Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask |
Ming-Lun Lee, Ching-Hua Chen and Jinn-Kong Sheu* |
Physica E: Low-dimensional Systems and Nanostructures (IF:3.57)
|
| 2020-07 |
期刊論文
|
NiOx Nanoparticles as Active Water Splitting Catalysts for the Improved Photostability of a n-GaN Photoanode |
Huang-Kai Wang, Sakthivel Kogularasu, Po-Hsun Liao, Yu-Tsun Yao, Ming-Lun Lee*, Jinn-Kong Sheu* |
Solar Energy Materials and Solar Cells (IF:7.267)
|
| 2020-06 |
期刊論文
|
Rationally Designed RGO@ CuO@ Mn2O3; As an Excellent Electrocatalyst for the Rapid and Real-time Detection of 2-Nitrophenol |
B Sriram, Kogularasu Sakthivel, Sea-Fue Wang*, Jinn-Kong Sheu* |
New Journal of Chemistry (IF:3.925)
|
| 2020-04 |
期刊論文
|
Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated With TiO2/Ag Nanoparticles Composite Structure as Photoelectrodes |
Jinn-Kong Sheu*, Po-Hsun Liao, Yen-Cheng Lee, Huang-Kai Wang, and Ming-Lun Lee* |
The Journal of Physical Chemistry C (IF:4.189)
|
| 2020-02 |
期刊論文
|
Observation of Femtosecond Acoustic Anomaly in a Solid Liquid Interface |
CK Sun, YT Yao, CC Shen, MH Ho, TC Lu, JK Sheu |
The Journal of Physical Chemistry C (IF:4.189)
|
| 2020-02 |
期刊論文
|
UV light-emitting diodes grown on GaN templates with selective-area Si implantation |
Ming-Lun Lee, Po-Hsun Liao, Hsin-Yan Cheng, Wei-Yu Yen, and Jinn-Kong Sheu* |
Optics Express (IF:3.669)
|
| 2020-01 |
期刊論文
|
Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant |
WY Hsu, YT Kuo, SS Hung, PY Wu, JK Sheu, KL Lin, YCS Wu |
ECS Journal of Solid State Science and Technology
|
| 2019-10 |
期刊論文
|
Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant |
W.Y. Hsu, Y.T. Kuo, S.S. Hung, P.Y. Wu, J.K. Sheu, K.L. Lin, Y.C.S Wu |
ECS Journal of Solid State Science and Technology
|
| 2019-09 |
期刊論文
|
Graphene Quantum Dot Vertical Cavity Surface-Emitting Lasers |
Ya-Ju Lee*, Ting-Wei Yeh, Chen Zou, Zu-Po Yang, Jia-Wen Chen, Pei-Lun Hsu, Ji-Lin Shen, Chun-Chieh Chang*, Jinn-Kong Sheu* Lih Y. Lin |
ACS Photonics (IF:7.077)
|
| 2019-08 |
期刊論文
|
Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater |
Ming-Lun Lee, Po-Hsun Liao, Guan-Lun Li, Hung-Wei Chang, Chi-Wing Lee & Jinn-Kong Sheu* |
Solar Energy Materials and Solar Cells (IF:7.267)
|
| 2019-04 |
期刊論文
|
Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN |
P.V. Wadekar, C.W. Chang, Y.J. Zheng, S.S. Guo, W.C. Hsieh, C.M. Cheng, M.H. Ma, W.C. Lai, J.K. Sheu |
Applied Surface Science
|
| 2019-04 |
期刊論文
|
Verification of complex acoustic mismatch model in sub-THz regime |
F.J. Wei, R.A. Mole, S.K. Karna, J.-W. Shi, J.-K. Sheu, K.-H. Lin |
Applied Physics Letters (IF: 3.597)
|
| 2019-03 |
期刊論文
|
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth |
Ming-Lun Lee, Shih-Sian Wang, Yu-Hsiang Yeh, Po-Hsun Liao, Jinn-Kong Sheu* |
Scientific Reports (IF:4.996)
|
| 2019-02 |
期刊論文
|
Investigation on Modulation Speed of Photon-recycling White Light-emitting Diodes with Vertical-conduction Structure |
Fu-Bang Chen, Kai-Lun Chi, Wei-Yu Yen, Jinn-Kong Sheu*, Ming-Lun Lee, Jin-Wei Shi |
Journal of Lightwave Technology(IF:4.288)
|
| 2019-01 |
期刊論文
|
A curvature-tunable random laser |
Y.J. Lee*, T.W. Yeh, Z.P. Yang, Y.C. Yao, C.Y. Chang, M.T. Tsai*, J.K. Sheu*,” A curvature-tunable random laser |
Nanoscale(IF:8.307)
|
| 2018-05 |
期刊論文
|
GaN intermediate band solar cells with Mn-doped absorption layer |
Ming-Lun Lee, Feng-Wen Huang, Po-Cheng Chen, and Jinn-Kong Sheu* |
Scientific Reports (IF:4.996)
|
| 2018-01 |
期刊論文
|
Design of GaN-Based Multi-Color Tunnel-Junction Light-Emitting Diodes |
Ya-Hsuan Shih, Jih-Yuan Chang, Yen-Kuang Kuo, Fang-Ming Chen, Man-Fang Huang, Ming-Lun Lee, and Jinn-Kong Sheu* |
IEEE Transactions on Electron Devices (IF:3.221)
|
| 2017-10 |
期刊論文
|
In Situ Monitoring of Chemical Reactions at a Solid−Water Interface |
Chih-Chiang Shen, Meng-Yu Weng, Jinn-Kong Sheu, Yi-Ting Yao, and Chi-Kuang Sun |
J. Phys. Chem. Lett.
|
| 2017-10 |
期刊論文
|
Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as photoelectrodes |
Jinn-Kong Sheu*,Po-Hsun Liao,Hsin-Yan Cheng,and Ming-Lun Lee |
Journal of Materials Chemistry A(IF:14.51)
|
| 2017-10 |
期刊論文
|
Planar GaN-Based Blue Light-Emitting Diodes With Surface pn Junction Formed by Selective-Area Si-Ion Implantation |
M.L. Lee, Y.H. Yeh, Z.Y. Liu, K.J. Chiang, J.K. Sheu* |
IEEE Transactions on Electron Device (IF:3.221)
|
| 2017-08 |
期刊論文
|
Carrier dynamics of Mn-induced states in GaN thin films |
Y..T. Chen, C.Y. Yang, P.C. Chen, J.K. Sheu, K.H. Lin |
Scientific Reports
|
| 2017-07 |
期刊論文
|
InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO 2 reduction to formic acid |
J. K. Sheu*, P. H. Liao, T.C. Huang, K.J. Chiang, W. C. Lai and M. L. Lee* |
Solar Energy Materials and Solar Cells(IF:7.267)
|
| 2017-07 |
期刊論文
|
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions |
Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Wei-Chih Lai, Heng Liu, Fang-Ming Chen, Ming-Lun Lee, Jinn-Kong Sheu* |
Optics Express (IF:3.669)
|
| 2017-06 |
期刊論文
|
GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF |
Juri Vinogradov,Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn-Kong Sheu, Kai-Lun Chi, Jhih-Min Wun, Jin-Wei Shi |
IEEE Photonics Journal
|
| 2017-01 |
期刊論文
|
Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes |
Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Fang-Ming Chen, Ming-Lun Lee, and Jinn-Kong Sheu* |
IEEE Electron Device Letters(IF:4.861)
|
| 2016-12 |
期刊論文
|
Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption |
Jinn-Kong Sheu*, Po-Cheng Chen, Cheng-Lun Shin, Ming-Lun Lee*, Po-Hsun Liao, and Wei-Chih Lai |
Solar Energy Materials and Solar Cells(IF:7.267)
|
| 2016-11 |
期刊論文
|
Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors |
Kuang-Po Hsueh, Hsien-Chin Chiu, Jinn-Kong Sheu,Yu-Hsiang Yeh |
Quant Electron
|
| 2016-07 |
期刊論文
|
III-Nitride-Based Cyan Light-Emitting Diodes With GHz Bandwidth for High-Speed Visible Light Communication |
Shi, Jin-Wei;Chi, Kai-Lun;Wun, Jhih-Min;Bowers, John E.;Shih, Ya-Hsuan; Sheu, Jinn-Kong |
IEEE ELECTRON DEVICE LETTERS
|
| 2016-06 |
期刊論文
|
THz Acoustic Spectroscopy by using Double Quantum Wells and Ultrafast Optical Spectroscopy |
Wei, Fan Jun;Yeh, Yu-Hsiang;Sheu, Jinn-Kong;Lin, Kung-Hsuan |
SCIENTIFIC REPORTS
|
| 2016-04 |
期刊論文
|
Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer |
Sheu, Jinn-Kong*;Chen, Po-Cheng;Yeh, Yu-Hsiang;Kuo, Shih-Hsun;Lee, Ming-Lun;Liao, Po-Hsun;Lai, Wei-Chih |
ACTA MATERIALIA(IF:7.656)
|
| 2016-03 |
期刊論文
|
Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes |
Shih, Ya-Hsuan; Chang, Jih-Yuan; Sheu, Jinn-Kong*; Kuo, Yen-Kuang; Chen, Fang-Ming; Lee, Ming-Lun;Lai, Wei-Chih |
IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.913)
|
| 2016-03 |
期刊論文
|
GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling |
Chen, Fu-Bang;Sheu, Jinn-Kong*;Yen, Wei-Yu;Wang, Yen-Chin;Huang, Shih-Hsien;Liu, Chun-Nan;Yeh, Yu-Hsiang;Chang, Chih-Chiang;Lee, Ming-Lun |
IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.913)
|
| 2016- |
期刊論文
|
Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes |
Yao, Yung-Chi; Yang, Zu-Po; Hwang, Jung-Min; Chuang, Yi-Lun; Lin, Chia-Ching; Haung, Jing-Yu ;Chou, Chun-Yang;Sheu, Jinn-Kong;Tsai, Meng-Tsan;Lee, Ya-Ju |
NANOSCALE(IF:6.895)
|
| 2015-08 |
期刊論文
|
Effects of Temperature on Niobium-Doped MgZnO Films Grown Using Radio-Frequency Magnetron Sputtering |
Hsueh, Kuang-Po, Huang, Chao-Yung, Chiu, Hsien-Chin, Sheu, Jinn-Kong, Yeh, Yu-Hsiang |
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
|
| 2015-08 |
期刊論文
|
Vertical GaN-based LEDs with naturally textured surface formed by patterned sapphire substrate with self-assembled Ag nanodots as etching mask |
Yu-Hsiang Yeh, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Yu Yen, Li-Chi Peng, Chun-Yi Yeh, Po-Hsun Liao, Po-Cheng Chen, and Wei-Chih Lai |
IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.913)
|
| 2015-04 |
期刊論文
|
GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure |
Jinn-Kong Sheu*, Fu-Bang Chen, Wei-Yu Yen, Yen-Chin Wang, Chun-Nan Liu, Yu-Hsiang Yeh, and Ming-Lun, Lee |
OPTICS EXPRESS(IF:3.669)
|
| 2015-04 |
期刊論文
|
Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single redphosphor |
Jinn-Kong Sheu*, Fu-Bang Chen, Yen-Chin Wang, Chih-Chiang Chang, Shih-Hsien Huang, Chun-Nan Liu, and Ming-Lun Lee |
OPTICS EXPRESS(IF:3.669)
|
| 2015-04 |
期刊論文
|
White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids |
Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Wei-Chih Lai, and Jinn-Kong Sheu* |
OPTICS EXPRESS (IF:3.669)
|
| 2015-02 |
期刊論文
|
THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures |
Pierre-Adrien Mante,Yu-Ru Huang,Szu-Chi Yang,Tzu-Ming Liu,Alexei A. Maznev,Jinn-Kong Sheu,Chi-Kuang Sun |
Ultrasonics
|
| 2014-11 |
期刊論文
|
Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode |
W. C. Lai, M. H. Ma, B. K. Lin, B. H. Hsieh, Y. R. Wu, and J. K. Sheu |
Optics Express
|
| 2014-09 |
期刊論文
|
Determination of s-d exchange coupling in GaMnN by time-resolved Kerr rotation spectroscopy |
Wei-Ting Hsu, Ting-Yen Hsieh, Hsin-Feng Chen, Feng-Wen Huang, Po-Cheng Chen, Jinn-Kong Sheu, and Wen-Hao Chang |
Phys. Rev. B
|
| 2014-09 |
期刊論文
|
Ga2O3 Films for Photoelectrochemical Hydrogen Generation |
Chang, Shoou-Jinn ; Wu, Ya-Ling ; Weng, Wen-Yin; Lin, Yo-Hong;Hsieh, Wei-Kang;Sheu, Jinn-Kong; Hsu, Cheng-Liang |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2014-09 |
期刊論文
|
Probing Hydrophilic Interface of Solid/Liquid-Water by Nanoultrasonics |
Pierre-Adrien Mante, Chien-Cheng Chen, Yu-Chieh Wen, Hui-Yuan Chen, Szu-Chi Yang,
Yu-Ru Huang, I.-Ju Chen, Yun-Wen Chen, Vitalyi Gusev5, Miin-Jang Chen6, Jer-Lai Kuo,
Jinn-Kong Sheu, Chi-Kuang Sun |
SCIENTIFIC REPORTS
|
| 2014-08 |
期刊論文
|
Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction |
Du, Chia-Fong, Lee, Chen-Hui, Cheng, Chao-Tsung, Lin, Kai-Hsiang, Sheu, Jin-Kong Sheu, Hsu-Cheng, Shu, |
Nanoscale Research Letters
|
| 2014-08 |
期刊論文
|
Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns |
Jinn-Kong Sheu*,Fu-Bang Chen, Shou-Hung Wu,Ming-Lun Lee, Po-Cheng Chen,
and Yu-Hsiang Yeh |
Optics Express
|
| 2014-06 |
期刊論文
|
Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures |
Ming-Lun Lee, Yu-Hsiang Yeh, Kuo-Hua Chang, P.C.Chen, Wei-Chih Lai and Jinn-Kong Sheu* |
IEEE Journal of Selected Topics in Quantum Electronics(IF:3.97)
|
| 2014-05 |
期刊論文
|
Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle
deposition |
Ya-Ju Lee*, Zu-Po Yang, Fang-Yuh Lo, Jhih-Jhong Siao, Zhong-Han Xie, Yi-Lun Chuang, Tai-Yuan Lin*, and Jinn-
Kong Sheu* |
APL MATERIALS
|
| 2014-05 |
期刊論文
|
Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method |
Kuang-Po Hsueh, Po-Wei Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Hsiang-Chun Wang, Jinn-Kong Sheu and Yu-Hsiang Yeh |
MRS Proceedings
|
| 2014-04 |
期刊論文
|
Surface plasmon-enhanced GaN metal–insulator–semiconductor ultraviolet detectors with Ag nanoislands embedded in a silicon dioxide gate layer |
Jinn-Kong Sheu*, Ming-Lun Lee and Yu-Cheng Lin |
IEEE Journal of Selected Topics in Quantum Electronics(IF:3.97)
|
| 2014-03 |
期刊論文
|
Passively gain-switched and self mode-locked thulium fiber laser at 1950 nm |
Tsao, Hong-Xi ; Chang, Chun-Hsiang;Lin, Shih-Ting; Sheu, Jinn-Kong* ; Tsai, Tzong-Yow |
Optics and Laser Technology
|
| 2014-02 |
期刊論文
|
Temperature-Dependent Current-Voltage Characteristics of Al-Doped MgxZn1-xO/AlGaN n-p Junction Diodes |
Hsueh, Kuang-Po; Cheng, Po-Wei ; Lin, Wen-Yen ; Chiu, Hsien-Chin ;Wang, Hsiang-Chun, Sheu, Jinn-Kong ; Yeh, Yu-Hsiang |
ECS Journal of Solid State Science and Technology
|
| 2013-11 |
期刊論文
|
Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride p-i-n solar cells |
Yao, Yung-Chi,Tsai, Meng-Tsan, Huang, Chun-Ying, Lin, Tai-Yuan*, Sheu, Jinn-Kong*, Lee, Ya-Ju* |
Appl. Phys. Lett.
|
| 2013-11 |
期刊論文
|
Thermal Boundary Resistance between GaN and Cubic Ice and THz Acoustic Attenuation Spectrum of Cubic Ice from Complex Acoustic Impedance Measurements |
Mante, Pierre-Adrien; Chen, Chien-Cheng; Wen, Yu-Chieh ; Sheu, Jinn-Kong; Sun, Chi-Kuang |
Phys. Review Lett.
|
| 2013-10 |
期刊論文
|
Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors |
Yu-Lin Tsai, Chien-Chung Lin, Hau-Vei Han, Chun-Kai Chang, Hsin-Chu Chen, Kuo-Ju Chen, Wei-Chi Lai, Jin-Kong Sheu, Fang-I Lai, Peichen Yu, Hao-Chung Kuo |
Solar Energy Materials and Solar Cells
|
| 2013-10 |
期刊論文
|
InGaN flip-chip light-emitting diodes with embedded air voids as light-scattering layer |
Yu-Hsiang Yeh, Jinn-Kong Sheu*,Ming-Lun Lee, Po-Cheng Chen,Yu-Chen Yang, Cheng-Hsiung Yen, Wei-Chih Lai |
IEEE Electron Device Letters
|
| 2013-10 |
期刊論文
|
InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting |
Shu-Yen Liu, J. K. Sheu*, Yu-Chuan Lin, Yu-Tong Chen, S. J. Tu, M. L. Lee, W. C. Lai |
Optics Express
|
| 2013-08 |
期刊論文
|
Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramidsformed by selective-area regrowth on Si-implanted GaN templates |
Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Ming-Jui Wu, Wei-Chih Lai, Jinn-Kong Sheu |
Optics Express
|
| 2013-08 |
期刊論文
|
Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer |
Jinn-Kong Sheu, Feng-Wen Huang, Chia-Hui Lee, Ming-Lun Lee, Yu-Hsiang Yeh, Po-Cheng Chen, Wei-Chih Lai |
Applied Physics Letters
|
| 2013-08 |
期刊論文
|
Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration |
Jih-Yuan Chang, Fang-Ming Chen, Yen-Kuang Kuo, Ya-Hsuan Shih, Jinn-Kong Sheu, Wei-Chih Lai, Heng Liu |
Optics Letters
|
| 2013-07 |
期刊論文
|
Acoustic spectroscopy for studies of vitreous silica up to 740 GHz |
Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, Jinn-Kong Sheu |
AIP Advances (American Institute of Physics)
|
| 2013-07 |
期刊論文
|
GaN-Based Dual-Color LEDs With -Type Insertion Layer for Controlling the Ratio of Two-Color Intensities |
K.L. Chi, S.-T. Yeh, Y.-H. Yeh, K.-Y. Lin, J.-W. Shi, Y.-R. Wu, M. L. Lee, J.-K. Sheu |
IEEE Transactions on Electron Devices
|
| 2013-06 |
研討會論文
|
GaN-Based Dual Color LEDs with P-Type Insertion Layer for Balancing Two-Color Intensities |
Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi, Yuh-Renn Wu, Jinn-Kong Sheu |
|
| 2013-06 |
研討會論文
|
THz Acoustic Attenuation of Silica studied by Ultrafast Acoustic Phonon Spectroscopy |
Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, Jinn-Kong Sheu |
|
| 2013-03 |
期刊論文
|
GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring |
Jei-Li Hou, Shoou-Jinn Chang, Meng-Chu Chen, C. H. Liu, Ting-Jen Hsueh, Jinn-Kong Sheu, Shuguang Li |
IEEE Transactions on Electron Devices
|
| 2013-03 |
研討會論文
|
Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes |
Kuang-Po Hsueh,Po-Wei Cheng, Yi-Chang Cheng, Jinn-Kong Sheu, Yu-Hsiang Yeh, Hsien-Chin Chiu, Hsiang-Chun Wang |
|
| 2013-03 |
研討會論文
|
Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors |
Yu-Lin Tsai, Chien-Chung Lin, Hau-Vei Han, Hsin-Chu Chen, Kuo-Ju Chen, Wei-Chi Lai, Jin-Kong Sheu, Fang-I Lai, Peichen Yu, Hao-Chung Kuo |
|
| 2013-03 |
研討會論文
|
Very High-Speed GaN-Based Cyan Light Emitting Diode on Patterned Sapphire Substrate for 1 Gbps Plastic Optical Fiber Communication |
Jin-Wei Shi, Che-Wei Lin, Wei Chen, John Bowers, Jin-King Sheu, Ching-Liang Lin, Yun-Li Li, Juri Vinogradov, Olaf Ziemann |
|
| 2013-02 |
期刊論文
|
Improved output power of GaN-based blue LEDs by formingair voids on Ar-implanted sapphire substrate |
Jinn-Kong Sheu*, Yu-Hsiang Yeh, Shang-Ju Tu, Ming-Lun Lee, P. C. Chen, Wei-Chih Lai |
Journal of Lightwave Technology
|
| 2013-02 |
期刊論文
|
Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy |
Jinn-Kong Sheu, Feng-Wen Huang, Yu-Hsuan Liu, P. C. Chen, Yu-Hsiang Yeh, Ming-Lun Lee, Wei-Chih Lai, |
Applied Physics Letters
|
| 2013-01 |
期刊論文
|
Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique |
Han-Yin Liu, Bo-Yi Chou, Wei-Chou Hsu, Ching-Sung Lee, Jinn-Kong Sheu, Chiu-Sheng Ho |
IEEE Transactionson Electron Devices
|
| 2012-11 |
期刊論文
|
High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect |
K. P. Hsueh, Y. C. Chang, W. Y. Lin, P. C. Cheng, H. C. Chiu, J. K. Sheu, Y. H. Yeh |
Journal of Vacuum Science and Technology B
|
| 2012-11 |
期刊論文
|
Vertical InGaN light-emitting diodes with a retained patterned sapphire layer |
Y. C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, Tsun Kai Ko |
Optics Express
|
| 2012-10 |
期刊論文
|
GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication |
Jhih-Min Wun, Che-Wei Lin, Wei Chen, J.-K. Sheu, Ching-Liang Lin, Yun-Li Li, John E. Bowers, Jin-Wei Shi, Juri Vinogradov, Roman Kruglov, Olaf Ziemann |
IEEE Photonics Journal
|
| 2012-10 |
期刊論文
|
Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate |
Jinn-Kong Sheu, Shang-Ju Tu, Yu-Hsiang Yeh, Ming-Lun Lee, Wei-Chih Lai |
Applied Physics Letters
|
| 2012-09 |
期刊論文
|
Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures |
Kai-Lun Chi, Jin-Wei Shi, C. H. Jang, Pyry Kivisaari, Jani Oksanen, Jukka Tulkki, M. L. Lee, J. K. Sheu |
IEEE Photonics Journal
|
| 2012-09 |
期刊論文
|
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition |
Jiun-Ting Chen, Wei-Chih Lai, C. Y. Chang, Jinn-Kong Sheu, W. C. Sen |
Applied Physics Letters
|
| 2012-09 |
期刊論文
|
Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light |
Shu-Yen Liu, J. K. Sheu, Yu-Chuan Lin, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai |
Optics Express
|
| 2012-08 |
期刊論文
|
Improved output power of InGaN LEDs by lateral overgrowth on Si-implanted n-GaN surface to form air gaps |
Shang-Ju Tu, Ming-Lun Lee, Yu-Hsiang Yeh, Feng-Wen Huang, Po-Cheng Chen, Wei-Chih Lai, Chung-Wei Chen, Gou Chung Chi, Jinn-Kong Sheu |
IEEE Journal of Quantum Electronics
|
| 2012-08 |
期刊論文
|
Sputtered ZnO–SiO2 nanocomposite light-emitting diodes with flat-top nanosecond laser treatment |
Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, Kun-Wei Lin, Li-Wen Lai |
Optics Express
|
| 2012-07 |
期刊論文
|
Femtosecond excitation of radial breathing mode in 2-D arrayed GaN nanorods |
Hung-Pin Chen, Yueh-Chun Wu, Pierre Adrien Mante, Shang-Ju Tu, Jinn-Kong Sheu, Chi-Kuang Sun |
Optics Express
|
| 2012-07 |
期刊論文
|
GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication |
Jhih-Min Wun, Che-Wei Lin, Wei Chen, J.-K. Sheu, Ching-Liang Lin, Yun-Li Li, John E. Bowers, Jin-Wei Shi, Juri Vinogradov, Roman Kruglov, Olaf Ziemann |
IEEE Photonics Journal
|
| 2012-07 |
期刊論文
|
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates |
Ching-Hsueh Chiu, Lung-Hsing Hsu, Chia-Yu Lee, Chien-Chung Lin, Bo-Wen Lin, Shang-Ju Tu, Yan-Hao Chen, Che-Yu Liu, Wen-Ching Hsu, Yu-Pin Lan, Jinn-Kong Sheu, Tien-Chang Lu, Gou-Chung Chi, Hao-Chung Kuo, Shing-Chung Wang, Chun-Yen Chang |
IEEE Photonics Technology Letters
|
| 2012-07 |
研討會論文
|
Confined acoustic vibrations in piezoelectric GaN nanorods |
Pierre-Adrien Mante, Hung-Pin Chen, Yueh-Chun Wu, Cheng-Ying Ho, Li-Wei Tu, Jinn-Kong Sheu, Chi-Kuang Sun |
|
| 2012-05 |
期刊論文
|
Vertical InGaN light-emitting diodes with Ag paste as bonding layer |
Y. C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Che-Kang Hsu, Shang-Ju Tu, Shu-Yen Liu, C. C. Yang, Feng-Wen Huang |
Microelectronics Reliability
|
| 2012-05 |
研討會論文
|
Femtosecond excitation of confined acoustic modes in 2-D arrayed GaN nanorods |
Hung-Pin Chen, Yueh-Chun Wu, Jinn-Kong Sheu, Chi-Kuang Sun |
|
| 2012-04 |
期刊論文
|
Optical properties of Mn in regrown GaN-based epitaxial layers |
Feng-Wen Huang, Jinn-Kong Sheu, Shang-Ju Tu, Po-Cheng Chen, Yu-Hsiang Yeh, Ming-Lun Lee, Wei-Chih Lai, Wen-Che Tsai, Wen-Hao Chang |
Optical Materials Express
|
| 2012-03 |
期刊論文
|
Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN |
Liang-Jyi Yan, Cheng Huang Kuo, Jinn-Kong Sheu, Ming-Lun Lee, Wei-Chun Tseng |
Journal of Alloys and Compounds
|
| 2012-02 |
期刊論文
|
Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes |
Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, Jinn-Kong Sheu |
Optics Express
|
| 2012-01 |
期刊論文
|
Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation |
Shu-Yen Liu, J. K. Sheu, M. L. Lee, Yu-Chuan Lin, S. J. Tu,1 F. W. Huang, W. C. Lai |
Optics Express
|
| 2012-01 |
期刊論文
|
Vertical InGaN light-emitting diodes with a sapphire-face-up structure |
Y. C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, Tsun Kai Ko, |
Optics Express
|
| 2011-12 |
期刊論文
|
Modulation Effects of Periodic Potentials on the Electronic Properties of Bilayer Bernal Graphene: Tight-Binding Model |
Sing-Jyun Tsai, Jinn-Kong Sheu, Ching-Hong Ho, Yu-Huang Chiu, Ming-Fa Lin |
Journal Physics Society of Japan
|
| 2011-12 |
期刊論文
|
Vertical InGaN light-emitting diodes with a sapphire-face-up structure |
Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko |
Optics Express
|
| 2011-11 |
期刊論文
|
Hydrogen gas generation using n-GaN
photoelectrodes with immersed Indium Tin
Oxide ohmic contacts |
Shu-Yen Liu, Yu-Chuan Lin, Jhao-Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee,
W. C. Lai, and J. K. Sheu* |
Optics Express
|
| 2011-11 |
期刊論文
|
Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection |
Feng-Wen Huang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai , and Wen-Hao Chang |
Optics Express
|
| 2011-10 |
期刊論文
|
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers |
J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi |
IEEE Electron Device Letters
|
| 2011-09 |
期刊論文
|
GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate |
Wei-Chih Lai, Ya-Yu Yang, Ying-Hong Chen, Jinn-Kong Sheu |
IEEE Photonics Technology Letters
|
| 2011-09 |
期刊論文
|
Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique |
J.-W. Shi, F.-M. Kuo, Che-Wei Lin, Wei Chen, L.-J. Yan, J.-K. Sheu |
IEEE Photonics Technology Letters
|
| 2011-08 |
期刊論文
|
Femtosecond ultrasonic spectroscopy using a piezoelectric nanolayer: Hypersound attenuation in vitreous silica films |
Yu-Chieh Wen, Shi-Hao Guol, Hung-Pin Chen, Jinn-Kong Sheu, Chi-Kuang Sun |
Applied Physics Letters
|
| 2011-07 |
期刊論文
|
Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration |
Chih-Ciao Yang, C. H. Jang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Yu-Hsiang Yeh, Wei-Chih Lai |
Optics Express
|
| 2011-07 |
期刊論文
|
Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire |
C. H. Jang, J. K. Sheu, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, C. K. Hsu |
IEEE Photonics Technology Letters
|
| 2011-06 |
期刊論文
|
Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices |
Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, Li-Wen Lai |
Optics Express
|
| 2011-06 |
期刊論文
|
Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells |
Shang-Ju Tu, Jinn-Kong Sheu, Ming-Lun Lee, Chih-Ciao Yang, Kuo-Hua Chang, Yu-Hsiang Yeh, Feng-Wen Huang, Wei-Chih Lai |
Optics Express
|
| 2011-06 |
期刊論文
|
High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer |
Ming-Lun Lee, T. S. Mue, F.W. Huang, J. H. Yang, J. K. Sheu |
Optics Express
|
| 2011-05 |
期刊論文
|
Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling |
Hsu Che-Kang, Sheu Jinn-Kong, Wang Jia-Kuen, Lee Ming-Lun, Chang Kuo-Hua, Tu Shang-Ju, Lai Wei-Chih |
Electrochemical and Solid-State Letters
|
| 2011-05 |
期刊論文
|
Influence of modulated fields on the Landau level properties of grapheme |
Y. C. Ou, J. K. Sheu, Y. H. Chiu, R. B. Chen, M. F. Lin |
Physical Review B
|
| 2011-05 |
期刊論文
|
The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Jin-Wei Shi, F.-M. Kuo, H.-W. Huang, Jinn-Kong Sheu, Chih-Ciao Yang, Wei-Chih Lai, Ming-Lung Lee |
IEEE Electron Device Letter
|
| 2011-04 |
期刊論文
|
Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates |
C. C. Yang, J. K. Sheu, C. H. Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee, Yu-Hsiang Yeh, X. W. Liang, W. C. Lai |
IEEE Electron Device Letter
|
| 2011-03 |
期刊論文
|
Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process |
Che-Kang Hsu, Jinn-Kong Sheu, Jia-Kuen Wang, Ming-Lun Lee, Kuo-Hua Chang, Shang-Ju Tu, Wei-Chih Lai |
Applied Physics Express
|
| 2011-02 |
期刊論文
|
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique |
Jin-Wei Shi, H.-W. Huang, F.-M. Kuo, W.-C. Lai, Ming-Lun Lee, Jinn-Kong Sheu |
IEEE Transactions on Electron Devices
|
| 2011-01 |
研討會論文
|
Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers |
Chih-Ciao Yang, Jinn-Kong Sheu, Min-Shun Huang, Shang-Ju Tu, Feng-Wen Huang, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai |
|
| 2011-01 |
研討會論文
|
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts |
Shu-Yen Liu, Jhao-Cheng Ye, Yu-Chuan Lin, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai, Jinn-Kong Sheu* |
|
| 2011-01 |
研討會論文
|
The surface plasma optical properties of silver nano particle on GaN |
Che-Kang Hsu, Jinn-Kong Sheu, Jia-Kuen Wang, Y. C. Lin, Ming-Lun Lee, W. C. Lai |
|
| 2010-12 |
期刊論文
|
Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors |
L.J. Yan, J. K. Sheu, F. W. Huang, M. L. Lee |
Journal of Applied Physics
|
| 2010-12 |
研討會論文
|
Characteristics of GaN p-i-n photodetectors with Mn-doped absorption layer |
Feng-Wen Huang, Yu-Hsuan Liu, Ming-Lun Lee, J. H. Yang, W. C. Lai, Jinn-Kong Sheu |
|
| 2010-12 |
研討會論文
|
Hydrogen generation from water splitting with GaN-based solar cells |
Shu-Yen Liu , Yu-Chuan Lin, Chih-Ciao Yang, Ming-Lun Lee, Wei-Chih Lai, Jinn-Kong Sheu |
|
| 2010-11 |
期刊論文
|
Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface |
Hung-Pin Chen, Yu-Chieh Wen, Yi-Hsin Chen, Cheng-Hua Tsai, Kuang-Li Lee, Pei-Kuen Wei, Jinn-Kong Sheu, Chi-Kuang Sun |
Applied Physics Letters
|
| 2010-11 |
期刊論文
|
InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film |
Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, Wei-Chih Lai, |
Optics Express
|
| 2010-10 |
期刊論文
|
Characterization of n-GaN with naturally textured surface for photoelectrochemical hydrogen generation |
Shu-Yen Liu, J. K. Sheu, Jhao-Cheng Ye, S.J.Tu, Che-Kang Hsu, M.L. Lee, C. H. Kuo, W.C. Lai |
Journal of The Electrochemical Society
|
| 2010-09 |
期刊論文
|
Effect of thermal annealing on GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer |
Ming-Lun Lee, T. S. Mue, J. K. Sheu, K.H. Chang, S. J. Tu, T. H. Hsueh |
Journal of The Electrochemical Society
|
| 2010-09 |
研討會論文
|
Characteristics of μ-Slice InGaN/GaN Light Emitting Diodes Formed by Focused Ion Beam Process |
C. K. Hsu, J. K. Sheu, J. K. Wang, M. L. Lee, K. H. Chang, S. J. Tu, W. C. Lai |
|
| 2010-08 |
期刊論文
|
GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures |
Wei-Chih Lai, Ya-Yu Yang, Li-Chi Peng, Shih-Wei Yang, Yu-Ru Lin, Jinn-Kong Sheu |
Applied Physics Letters
|
| 2010-07 |
期刊論文
|
Enhancement of The Conversion Efficiency of GaN-Based Photovoltaic Devices with AlGaN/InGaN Absorption Layers |
C. C. Yang, J. K. Sheu, X. W. Liang, M. S. Huang, M. L. Lee, K. H. Chang, S. J. Tu, F. W. Huang, W. C. Lai |
Applied Physics Letters
|
| 2010-07 |
期刊論文
|
GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region |
P. H. Chen, Li Chuan Chang, C. H. Tsai, Y. C. Lee, Wei-Chih Lai, Mount-Learn Wu, Cheng-Huang Kuo, Jinn-Kong Sheu |
IEEE Journal of Quantum Electronics
|
| 2010-07 |
期刊論文
|
Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy |
Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Chih-Ciao Yang, Huan-Shao Kuo, J. H. Yang, Wei-Chih Lai |
Applied Physics Letters
|
| 2010-05 |
期刊論文
|
Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Jin-Wei Shi, H.-W. Huang, F.-M. Kuo, J.-K. Sheu, W.-C. Lai, M. L. Lee |
IEEE Photonics Technology Letters
|
| 2010-04 |
期刊論文
|
Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer |
Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Kai-Shun Kang, Jing-Fong Huang, Wei-Li Wang, Wei-Chih Lai |
Japanese Journal of Applied Physics
|
| 2010-04 |
期刊論文
|
Improved Performance of GaN-based Blue LEDs with the InGaN Insertion Layer between the MQW Active Layer and the n-GaN Cladding Layer |
C. H. Jang, J. K. Sheu, C. M. Tsai, S. J. Chang, W.C. Lai, M. L. Lee, T. K. Ko, C. F. Shen, S. C. Shei |
IEEE Journal of Quantum Electronics
|
| 2010-03 |
期刊論文
|
AlGaN-based ultraviolet photodetector with micropillar structures |
W. C. Lai, L. C. Peng, C. C. Chen, J. K. Sheu, S. C. Shei |
Applied Physics Letters
|
| 2010-03 |
期刊論文
|
Erbium-doped All-Fiber Green Up-conversion Amplified Emission in Silica-Based Fiber System |
H. X. Tsao, S. T. Lin, H. C. Su, J. B. Horng, J. K. Sheu |
Japanese Journal of Applied Physics
|
| 2010-03 |
期刊論文
|
InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer |
S. H. Tu, C. J. Lan, S.H. Wang, M. L. Lee, K. H. Chang, R. M. Lin, J. Y. Chang, J. K. Sheu |
Applied Physics Letters
|
| 2010-02 |
期刊論文
|
AlGaInP/GaP heterostructures bonded with Si substrate to serve as solar cells and light-emitting diodes |
Liang-Jyi Yan, Chih-Chiao Yang, Ming-Lun Lee, Shang-Ju Tu ,Chih-Sung Chang, Jinn-Kong Sheu |
Journal of The Electrochemical Society
|
| 2010-01 |
期刊論文
|
GaN-based LEDs with AZO:Y Upper Contact |
P. H. Chen, W. C. Lai, L. C. Peng, C. H. Kuo, C. L. Yeh, J. K. Sheu, C. J. Tun |
IEEE Transaction on Electron Devices
|
| 2010-01 |
期刊論文
|
III-Nitride Based Light Emitting Diodes with GaN Micro-Pillars around Mesa and Patterned Substrate |
Li-Chi Peng, Wei-Chih Lai, Ming-Nan Chang, Tao-Hung Hsueh, Shih-Chang Shei, Jinn-Kong Sheu |
IEEE Transaction on Electron Devices
|
| 2010-01 |
期刊論文
|
Sub-Bandgap Laser Light-Induced Excess Carrier Transport Between Surface States and Two-Dimensional Electron Gas Channel in AlGaN/GaN Structure |
Yun-Chorng Chang, Jinn-Kong Sheu, Yun-Li Li |
IEEE Journal of Quantum Electronics
|
| 2009-12 |
期刊論文
|
Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte |
Shu-Yen Liu, J. K. Sheu, Chun-Kai Tseng, Jhao-Cheng Ye, K. H. Chang, M. L. Lee, W. C. Lai |
Journal of The Electrochemical Society
|
| 2009-11 |
期刊論文
|
A Numerical Study of Thermal and Electrical Effects in a Vertical LED Chip |
Farn-Shiun Hwu, Jyh-Chen Chen, Sheng-Han Tu, Gwo-Jiun Sheu, Hsueh-I Chen, Jinn-Kong Sheu |
Journal of The Electrochemical Society
|
| 2009-10 |
期刊論文
|
GaN-Based LED with Embedded Microlens-like Structure |
W. C. Lai, L. C. Peng, M. N. Chang, S. C. Shei, Y. P. Hsu, J. K. Sheu |
Journal of The Electrochemical Society
|
| 2009-10 |
期刊論文
|
GaN-Based LEDs With GaN-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads |
Li-Chi Peng, Wei-Chih Lai, Ming-Nan Chang, Shih-Chang Shei, Jinn-Kong Sheu |
IEEE Photonics Technology Letters
|
| 2009-10 |
期刊論文
|
The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads |
Shih-Chang Shei, Wei-Chih Lai, Jinn-Kong Sheu, I-Hsiu Hung, Shoou-Jinn Chang |
Japanese Journal of Applied Physics
|
| 2009-10 |
研討會論文
|
Direct Hydrogen Gas Generation by n-GaN Photoelectrode with SiO2 Protection Layer on the Ohmic Contact from the Electrolyte |
Shu-Yen Liu, Chun-Kai Tseng, Jhao-Cheng Ye, K. H. Chang, M. L. Lee, W. C. Lai, J. K. Sheu |
|
| 2009-10 |
研討會論文
|
Enhanced Photovoltaic Effects of InGaN-based Materials for Future Full-Solar-Spectrum Solar Cells |
Chih-Ciao Yang, Jinn-Kong Sheu, Shang-Ju Tu, Chun-Kai Tseng, Min-Shun Huang, Kuo-Hua Chang, Tao-Hung Hsueh, Ming-Lun Lee, Li-Chi Peng, Wei-Chih Lai |
|
| 2009-10 |
研討會論文
|
GZO/GaN Schottky barrier ultraviolet band-pass photodetector with a low-temperature-grown GaN cap layer |
Kuo-Hua Chang, Jinn-Kong Sheu Ming-Lun Lee, Kai-Shun Kang, Jing-Fong Huang, Wei-Li Wang, Wei-Chih Lai |
|
| 2009-08 |
期刊論文
|
The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers |
J.-W. Shi, Shi-Hao Guol, C.-S. Lin, J.-K. Sheu, K. H. Chang, W.-C. Lai, C.-H. Kuo, C.-J. Tun, J.-I. Chyi |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2009-06 |
期刊論文
|
Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers |
J. K. Sheu, K.H. Chang, M. L. Lee, J. F. Huang, K. S. Kang, W. L. Wang, W. C. Lai, T. H. Hsueh |
Journal of The Electrochemical Society
|
| 2009-06 |
期刊論文
|
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars |
Wei-Chih Lai, P. H. Chen, L. C. Chang, Cheng-Huang Kuo, Jinn-Kong Sheu, C. J. Tun, S. C. Shei |
IEEE Photonics Technology Letters
|
| 2009-06 |
期刊論文
|
GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth |
C. M. Tsai, J. K. Sheu, W.C. Lai , M. L. Lee, S. J. Chang , C. S. Chang, T. K. Ko, C. F. Shen |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2009-06 |
期刊論文
|
High-Brightness InGaN–GaN Power Flip-Chip LEDs |
Shoou-Jinn Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, A. J. Lin |
Journal of Lightwave Technology
|
| 2009-06 |
期刊論文
|
Light Output Improvement of Oxide-Textured InGaN-Based Light-Emitting Diodes by Bias-Assisted Photoelectrochemical Oxidation With Imprint Technique |
C. Y. Yeh, W. C. Lai, T. H. Hsueh, Y. Y. Yang, J. K. Sheu, S. P. Ringer, B. Gault |
IEEE Photonics Technology Letters
|
| 2009-05 |
研討會論文
|
The Bandwidth-Efficiency Product Enhancement of GaN Based Photodiodes by Launching a Low-Temperature-Grown Recombination Center in Photo-Absorption Region |
S.-H. Guol, M.-L. Lee, C.-S. Lin, J.-K. Sheu, Y.-S. Wu, C.-K. Sun, C.-H. Kuo, C.-J. Tun, J.-W. Shi |
|
| 2009-03 |
期刊論文
|
Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer |
Kenzo Fujiwara, Hirofumi Katou, Takao Inoue, Jinn-Kong Sheu |
Physica Status Solidi (c)
|
| 2009-03 |
期刊論文
|
Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers |
Jinn-Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai, Li-Chi Peng |
IEEE Electron Device Letter
|
| 2009-03 |
期刊論文
|
Electrical-Optical Analysis of a GaN/Sapphire LED Chip by Considering the Resistivity of the Current-Spreading Layer |
Jyh-Chen Chen, Gwo-Jiun Sheu, Farn-Shiun Hwu, Hsueh-I Chen, Jinn-Kong Sheu, Tsung-Xian Lee, Ching-Cherng Sun |
Optical Review
|
| 2009-03 |
期刊論文
|
Improvement of the efficiency of InGaN/GaN quantum well light emitting diodes grown with a pulsed trimethylindium flow process |
Tao-Hung Hsueh, Jinn-Kong Sheu, Wei-Chi Lai, Yi-Ting Wang, Hao-Chung Kuo, Shing-Chung Wang |
IEEE Photonics Technology Letters
|
| 2009-02 |
期刊論文
|
Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes |
Shi-Hao Guol, H.-W. Huang, C.-S. Lin, J.-K. Sheu, C.-J. Tin, C.-H. Kuo, Jin-Wei Shi |
Proceedings of SPIE (The International Society for Optical Engineering)
|
| 2009-02 |
期刊論文
|
GaN-Based Power Flip-Chip LEDs With Cu Submount |
S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A. J. Lin, S. C. Hung |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2009-01 |
期刊論文
|
Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio |
M. L. Lee, Ping-Feng Chi, J. K. Sheu |
Applied Physics Letters
|
| 2009-01 |
研討會論文
|
Array of GaN-based transverse junction blue light-emitting-diodes (LEDs) |
Shi-Hao Guol, Jin-Wei Shi, C. S. Lin, J.-K. Sheu, M. L. Lee, Kuo-Hui Chang, W. C. Lai, C. H. Kuo, C. J. Tun, Jen-Inn Chyi |
|
| 2008-12 |
期刊論文
|
Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition |
Wei-Chih Lai, Cheng-Huang Kuo, Wei-Yu Yen, Jinng-Kong Sheu, Shoou-Jinng Chang |
Japanese Journal of Applied Physics
|
| 2008-12 |
研討會論文
|
AC bias-assisted photoenhanced oxidation of n-GaN in DI water |
Tao-Hung Hsueh, Chun-Yi Yeh, Li-Chi Peng, Kuo-Hua Chang, Fang-I Lai, Wei-Chih Lai, Ming-Lun Lee, Jinn-Kong Sheu |
|
| 2008-12 |
研討會論文
|
Design and Characterization of GaN-based Solar Cells with GaN/InGaN Superlattice Absorption Layers |
Jinn-Kong Sheu, Chih-Ciao Yang, Wei-Chih Lai, Kuo-Hua Chang, Li-Chi Peng, Ming-Lun Lee, Shang-Ju Tu |
|
| 2008-11 |
期刊論文
|
Linear Cascade GaN Based Green Light Emitting Diodes with Invariant High-Speed/Power Performance under High-Temperature Operation |
J.-W. Shi, P-.Y. Chen, C.-C. Chen, J.-K. Sheu, W.-C. Lai, Yun-Chih Lee, Po-Shen Lee, Shih-Pu Yang, Mount-Learn Wu |
IEEE Photonics Technology Letters
|
| 2008-11 |
研討會論文
|
High-speed and high-power GaN-based cascade green Light-Emitting-Diode arrays for in-car data communication |
J.-W. Shi, P.-Yu. Chen, C.-C. Chen, S.-H. Guol, J.-K. Sheu, W.-C. Lai |
|
| 2008-09 |
期刊論文
|
Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads |
J. K. Sheu, I-Hsiu Hung, W. C. Lai, S. C. Shei, M. L. Lee |
Applied Physics Letter
|
| 2008-09 |
期刊論文
|
Improved light extraction efficiency in AlGaInP light-emitting diodes by applying a periodic texture on the surface |
Liang-Jyi Yan, J. K. Sheu, Wei-Chih Wen, Tien-Fu Liao, Ming-Jong Tsai, Chih-Sung Chang |
IEEE Photonics Technology Letters
|
| 2008-08 |
期刊論文
|
Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors |
Wei-Chih Lai, Jinn-Kong Sheu, Yi-Keng Fu, Cheng-Huang Kuo, Chi-Wen Kuo, Ching-Ju Tun, Ching-Jen Pan, Gou-Chung Chi |
Japanese Journal of Applied Physics
|
| 2008-08 |
期刊論文
|
The Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip |
G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, W. C. Lai |
Journal of The Electrochemical Society
|
| 2008-07 |
期刊論文
|
Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs |
Chung-Hsun Jang, J. K. Sheu, C. M. Tsai, S. C. Shei W. C. Lai, S. J. Chang |
IEEE Photonics Technology Letters
|
| 2008-07 |
期刊論文
|
Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer |
C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, G. C. Chia |
Electrochemical and Solid State Letters
|
| 2008-07 |
研討會論文
|
Opto-Electrical characteristics of the Mg doped nonpoplar (11-20) GaN on R plane Sapphire |
W. C. Lai, W.Y Yen, S. J. Cheng, L. C. Peng, J. K. Sheu, T. H. Hsueh, C. H. Kuo, Y. P. Hsu, J. D. Guo, S. J. Chang |
|
| 2008-06 |
研討會論文
|
Analysis of Current Spreading Layer in a GaN/Sapphire LED Chip |
Gwo-Jiun Sheu, Farn-Shiun Hwu, Jinn-Kong Sheu, Jyh-Chen Chen |
|
| 2008-05 |
期刊論文
|
Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency |
J.-K. Sheu, M.-L. Lee, Y. S. Lu, K. W. Shu |
IEEE Journal of Quantum Electronics
|
| 2008-05 |
期刊論文
|
Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams |
S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai, S. J. Chang |
Physica Status Solidi (c)
|
| 2008-04 |
期刊論文
|
Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars |
Shang-En Wu, Tao-Hung Hsueh, Chuan-Pu Liu, Jinn-Kong Sheu, Wei-Chih Lai, Shoou-Jinn Chang |
Japanese Journal of Applied Physics
|
| 2008-04 |
期刊論文
|
The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers |
W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H Hsueh, C. H. Kuo, S. J. Chang |
Physica Status Solidi (c)
|
| 2008-03 |
期刊論文
|
Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions |
J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, J.-I. Chyi |
IEEE Photonics Technology Letters
|
| 2008-03 |
期刊論文
|
Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to n-GaN |
J. K. Sheu, K. H. Chang, M. L. Lee |
Applied Physics Letter
|
| 2008-02 |
期刊論文
|
High-Speed GaN-based Green Light Emitting Diodes with Partially n-doped Active Layers and Current-Confined Apertures |
J.-W. Shi, J.-K. Sheu, C.-H. Chen, G.-R. Lin, W.-C. Lai |
IEEE Electron Device Letters
|
| 2008-02 |
期刊論文
|
Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransitors with high optical gain and high rejection ratio |
M. L. Lee, J. K. Sheu, Yung-Ru Shu |
Applied Physics Letter
|
| 2007-11 |
研討會論文
|
Phosphor-free GaN-based transverse junction white-light-emitting diode |
J. W. Shi, C. C. Chen, J. K. Sheu, W. C. Lai, C. H. Kuo, C. J. Tun, T.H. Yang, J. I. Chyi |
|
| 2007-10 |
期刊論文
|
Non-alloyed Cr/Au Ohmic contacts to n-GaN |
M. L. Lee, J. K. Sheu, C. C. Hu |
Applied Physics Letter
|
| 2007-10 |
研討會論文
|
Phosphor-Free GaN-Based Cascade Transverse Junction Light Emitting Diode Arrays for the High-Power Generation of White-Light |
j. W. Shi, Shi-Hao Guol, J.-K. Sheu, W.-C. Lai, C.-K. Wang, C.-H. Chen, Cheng-Huang Kuo, J.-I. Chyi |
|
| 2007-09 |
研討會論文
|
Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling |
Shang-En Wu, Tao-Hung Hsueh, Chuan-Pu Liu, Jinn-Kong Sheu, Wei-Chih Lai, Shoou-Jinn Chang |
|
| 2007-09 |
研討會論文
|
Nonlithographic Nanopatterning of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling |
Tao-Hung Hsueh, Shang-En Wu, Chuan-Pu Liu, Jinn-Kong Sheu, Wei-Chih Lai, Shoou-Jinn Chang |
|
| 2007-09 |
研討會論文
|
The CL Emission Observation of the InGaN/GaN MQWs V Shaped Pits with Different Superlattices Underlayers |
Wei-Chih Lai, Yu-Shing Huang, Wei-Yu Yen, Jinn-Kong Sheu, Cheng-Huang Kuo, Tao-Hung Hsueh, Shoou-Jinn Chang |
|
| 2007-08 |
期刊論文
|
Largely variable electroluminescence efficiency with current and temperature in a blue InGaN multiple-quantum-well diode |
Y. Yamane, K Fujiwara, J.K.Sheu |
Applied Physics Letter
|
| 2007-08 |
期刊論文
|
Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance |
J.-W. Shi, J.-K. Sheu, C.-K. Wang, C.-C. Chen, C.-H. Hsieh, J.-I. Chyi, W.-C. Lai |
IEEE Photonics Technology Letters
|
| 2007-08 |
研討會論文
|
Visible and infrared light-emitting diodes provide stable broadband output |
jin-Wei Shi, J.-I. Chyi, J.-K. Sheu, W.-C. Lai, Ying-Jay Yang |
|
| 2007-07 |
期刊論文
|
Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs |
Kuang-Po Hsueh, Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai, Chun-Ju Tun, Chia-Hung Hsu , Bi-Hsuan Lin |
Solid-State Electronics
|
| 2007-06 |
期刊論文
|
Enhanced Efficiency of GaN-based Light-Emitting Diodes With Periodic Textured Ga-doped ZnO Transparent Contact Layer |
Jinn-Kong Sheu, Y. S. Lu, Min-Lum Lee, W. C. Lai, C.H.Kuo, Chun-Ju Tun |
Applied Physics Letter
|
| 2007-06 |
期刊論文
|
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography |
S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei , J. K. Sheu |
Applied Physics Letter
|
| 2007-06 |
期刊論文
|
Variations of channel conductance in AlGaN/GaN structure with sub-bandgap laser light and above-bandgap illuminations |
Yun-Chorng Chang, Yun-Li Li, Tzung-Han Lin, Jinn-Kong Sheu |
Japanese Journal of Applied Physics
|
| 2007-05 |
期刊論文
|
Improved Reliability and ESD characteristics of Flip-Chip GaN-based LEDs with Internal Inverse-parallel Protection Diodes |
S. C. Shei, Jinn-Kong Sheu, Chien-Fu Shen |
IEEE Electron Device Letter
|
| 2007-04 |
期刊論文
|
AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates |
S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou,Y. C. Lin, C. S. Chang, W. S. Chen, C. F. Shen |
Sensors and Actuators A: Physical
|
| 2007-04 |
期刊論文
|
Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering |
J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun, G. C. Chi |
Journal of The Electrochemical Society
|
| 2007-04 |
期刊論文
|
Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions |
T. Inoue, K. Fujiwara, J. K. Sheu |
Applied Physics Letter
|
| 2007-03 |
期刊論文
|
Temperature-dependent study of n-ZnO/p-GaN diodes |
Kuang-Po Hsueh, Shou-Chian Huang, Ching-Tai Li and Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai , Chun-Ju Tun |
Applied Physics Letter
|
| 2007-01 |
期刊論文
|
Crack-Free High-Brightness InGaN/GaN LEDs on Si(111) with Initial AlGaN Buffer and Two LT-Al Interlayers |
Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo |
Journal of The Electrochemical Society
|
| 2007-01 |
期刊論文
|
GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE |
M. L. Lee, J. K. Sheu |
Journal of The Electrochemical Society
|
| 2006-12 |
期刊論文
|
Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer |
N. Otsuji, K. Fujiwara, J. K. Sheu |
Journal of Applied Physics
|
| 2006-12 |
研討會論文
|
External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes |
Inoue, T. , Fujiwara, K. ,Sheu J. K. |
|
| 2006-12 |
研討會論文
|
Modulation-Speed Enhancement of a GaN Based Green Light-Emitting-Diode (LED) by Use of n-type Barrier Doping for Plastic Optical Fiber (POF) Communication |
H.-Y. Huang, J.-W. Shi, Y.-S. Wu, J.-I. Chyi, J.-K. Sheu, W.-C. Lai, G.-R. Lin, Ci-Ling Pan |
|
| 2006-10 |
期刊論文
|
Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring |
M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, G. C. Chi |
Applied Physics Letter
|
| 2006-09 |
期刊論文
|
Highly reliable nitride-based LEDs with internal ESD protection diodes |
S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chen, T. K. Ko, J. K. Sheu |
IEEE Transactions on Device and Materials Reliability
|
| 2006-09 |
研討會論文
|
High-brightness and Crack-free InGaN/GaN Light-Emitting Diodes with AlGaN buffer layer on Si(111) |
Y. P. Hsu, S. J. Chang, Y. K. Su, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo |
|
| 2006-09 |
研討會論文
|
Inverted GaN P-I-N Photodiodes with a buried tunneling junction |
M. L. Lee, J. K. Sheu, W. C. Lai, S. C. Shei, S. J. Chang |
|
| 2006-09 |
研討會論文
|
Modulation of resistivity of two dimensional electron gas in AlGaN/GaN structure |
Y. C. Chang, J. K. Sheu, Y. L. Li |
|
| 2006-09 |
研討會論文
|
Optical properties of InGaN/GaN Light-Emitting Diodes grown by pulsed TMIn-flow process |
T. H. Hsueh, J. K. Sheu, W. C. Lai, Y. T. Wang, H. C. Kuo, S. C. Wang |
|
| 2006-08 |
期刊論文
|
Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors |
T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C. K. Wang, J. K. Sheu, W. C. Lai |
IEEE Sensors Journal
|
| 2006-08 |
期刊論文
|
Nitride-based flip-chip p-i-n photodiodes |
T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, C. F. Shen |
IEEE Transactions on Advanced Packaging
|
| 2006-08 |
期刊論文
|
The improvement in modulation speed of GaN-based green light-emitting diode, (LED) by use of n-type barrier, doping for plastic optical fiber (POF) communication |
J.-W. Shi, H.-Y. Huang, J.-K. Sheu, C.-H. Chen, Y.-S. Wu, W.-C. Lai |
IEEE Photonics Technology Letters
|
| 2006-06 |
期刊論文
|
AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers |
T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F. Shen, S. P. Chang, K. W. Lin |
Semiconductor Science and Technology
|
| 2006-06 |
期刊論文
|
High Efficiency and Improved ESD Characteristics of GaN-based LEDs with Naturally Textured Surface Grown by MOCVD |
C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo , Y. K. Su |
IEEE Photonics Technology Letters
|
| 2006-06 |
期刊論文
|
Planar ultra-violet photodetectors formed by Si implantation into p-GaN |
M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi |
Journal of The Electrochemical Society
|
| 2006-05 |
期刊論文
|
Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation |
M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, G. C. Chi |
Applied Physics Letter
|
| 2006-05 |
研討會論文
|
Modulation-Speed Enhancement of a GaN Based Green Light-Emitting-Diode (LED) by Use of n-type Barrier Doping for Plastic Optical Fiber (POF) Communication |
H.-Y. Huang, Jin-Wei Shi, Y.-S. Wu, J.-I. Chyi, J.-K. Sheu, W.-C. Lai, G.-R. Lin, Ci-Ling Pan |
|
| 2006-04 |
期刊論文
|
Emission Mechanism of Mixed-color InGaN/GaNMulti-quantum Well Light-emitting Diodes |
Shih-Chang Shei , Jinn-Kong Sheu, Chi-Ming Tsai, ,Wei-Chi Lai , Min-Lum Lee, Cheng-Huang Kuo |
Japanese Journal of Applied Physics
|
| 2006-04 |
期刊論文
|
GaN-based p-i-n sensors with ITO contacts |
S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, C. F. Shen |
IEEE Sensors Journal
|
| 2006-03 |
期刊論文
|
Applications of transparent Al-doped ZnO contact on GaN-based power LED |
C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, G. C. Chi |
Proceedings of SPIE (The International Society for Optical Engineering)
|
| 2006-03 |
期刊論文
|
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface |
J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei , W. C. Lai |
Applied Physics Letter
|
| 2006-02 |
期刊論文
|
Effects of thermal annealing on transparent Al-doped ZnO films deposited on p-GaN |
C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh , G. C. Chi |
Journal of The Electrochemical Society
|
| 2006-01 |
期刊論文
|
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer |
Chun-Ju Tun , Jinn-Kong Sheu, Bao-Jen Pong, Ming-Lun Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, Gou-Chung Chi |
IEEE Photonics Technology Letters
|
| 2006-01 |
期刊論文
|
Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer |
Kuang-Po Hsueh, Yue-Ming Hsina , Jinn-Kong Sheu |
Journal of Applied Physics
|
| 2006-01 |
期刊論文
|
Nitride-Based Photodiode at 510-nm Wavelength for Plastic Optical Fiber Communication |
J.-W. Shi, H.-Y. Huang, J.-K. Sheu, S.-H. Hsieh, Y.-S. Wu, Ja-Yu Lu, F.-H. Huang, W.-C. Lai |
IEEE Photonics Technology Letters
|
| 2006-01 |
期刊論文
|
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer |
Ming-Lun Lee, Jinn-Kong Sheu, S. W. Lin |
Applied Physics Letter
|
| 2006-01 |
期刊論文
|
Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN |
Jinn-Kong Sheu, Ming-Lun Lee, Chun-Ju Tun, S. W. Lin |
Applied Physics Letter
|
| 2005-12 |
期刊論文
|
Effect of Cl2 /Ar dry etching on p GaN with Ni/Au metallization characterization |
Kuang-Po Hsueh, Hung-Tsao Hsu, Che-Ming Wang, Shou-Chian Huang, Yue-Ming Hsin, Jinn-Kong Sheu |
Applied Physics Letter
|
| 2005-10 |
期刊論文
|
Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods |
Tao-Hung Hsueh, Jinn-Kong Sheu, Hung-Wen Huang, Ya-Hsien Chang, Miao-Chia Ou-Yang, Hao-Chung Kuo, Shing-Chung Wang |
Japanese Journal of Applied Physics
|
| 2005-09 |
期刊論文
|
AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers |
T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, C. F. Shen |
Journal of Crystal growth
|
| 2005-09 |
期刊論文
|
Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors |
C. J. Kao, M. C. Chen, C. J. Tun ,G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F. Ren, S. J. Pearton |
Journal of Applied Physics
|
| 2005-09 |
期刊論文
|
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase |
J. K. Sheu, S. S. Chen, M. L. Lee, W. C. Lai, W. H. Chang, G. C. Chi |
Journal of The Electrochemical Society
|
| 2005-08 |
期刊論文
|
Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer |
J. K. Sheu, M. L. Lee, W. C. Lai, H. C. Tseng, G. C. Chi |
Journal of Applied Physics
|
| 2005-07 |
期刊論文
|
Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure |
J. K. Sheu, M. L. Lee, W. C. Lai |
Applied Physics Letter
|
| 2005-07 |
期刊論文
|
Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD |
C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, Y. K. Su |
IEEE Electron Device Letter
|
| 2005-07 |
研討會論文
|
Optical Properties of InGaN/GaN Nanorods Fabricated by Inductively Coupled Plasma Etching |
T. H. Hsueh, J. K. Sheu, Y. H. Chang, H. C. Kuo, S. C. Wang |
|
| 2005-06 |
期刊論文
|
Enhancement of Light Output in InGaN-based Microhole Array Light-Emitting Diodes |
T. H. Hsueh, J. K. Sheu, H. W. Huang, C. C. Kao, J. Y. Chu, H. C. Kuo, S. C. Wang |
IEEE Photonics Technology Letters
|
| 2005-03 |
期刊論文
|
ICP etching of sapphire substrates |
Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang , S. C. Shei |
Optical materials
|
| 2005-02 |
期刊論文
|
Photoluminescence from In0.3Ga0.7N/GaN Multiple Quantum Wells Nanorods |
T. H. Hsueh, H. W. Huang, F. I. Lai, J. K. Sheu, Y. H. Chang, H. C. Kuo, S. C. Wang |
Nanotechnology
|
| 2005-01 |
期刊論文
|
Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes |
J. K. Sheu, M. L. Lee, W. C. Lai |
Applied Physics Letter
|
| 2004-10 |
期刊論文
|
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures |
T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu |
IEEE Transactions on Electron Devices
|
| 2004-10 |
研討會論文
|
si-doped in0.23ga0.77n/gan short-period superlattice tunneling contact layer used on ingan/gan laser diode |
C. J. Tun, R. C. Tu, J. K. Sheu, C. C. Chou, T. C. Wang, C. E. Tsai, G. C. Chi |
|
| 2004-10 |
研討會論文
|
Planar GaN-based UV Photodetectors formed by Si Implantation |
M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi |
|
| 2004-09 |
期刊論文
|
Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer |
M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, G. C. Chi |
IEEE Electron Device Letter
|
| 2004-09 |
研討會論文
|
Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer |
Otsuji N. ,Takahashi Y. ,Satake, A. ,Fujiwara, K. , Shue J.K. ,Jahn, U. ,Kostial, H. , Grahn, H.T. |
|
| 2004-08 |
期刊論文
|
Effect of low-temperature-grown GaN cap layer on electrical properties of Al0.25Ga0.75N/GaN heterojunction field-effect transistors |
C. J. Kao, J. K. Sheu, W. C. Lai , M. C. Chen, M. L. Lee, G. C. Chi |
Applied Physics Letter
|
| 2004-06 |
期刊論文
|
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers |
S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, C. T. Lee |
IEEE Photonics Technology Letters
|
| 2004-06 |
期刊論文
|
Si diffusion in p GaN |
C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu, J. Y. Chen |
Journal of Vacuum Science and Technology B: Microelectronics
|
| 2004-06 |
研討會論文
|
Monolithic InGaN/GaN light-emitting diodes with near white-light emission from crossed blue/green quantum well structure |
T. C. Wen, J. K. Sheu, W. C. Lai, J. M. Tsai, Y. P. Shu, C. H. Ko, L. W. Wu, M. L. Lee, P. T. Wang, C. S. Chang, S. J. Chang, Y. K. Su |
|
| 2004-04 |
期刊論文
|
Nitride-based LEDs with an SPS tunneling contact and an ITO transparent contact |
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chung, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu |
IEEE Photonics Technology Letters
|
| 2004-03 |
期刊論文
|
Enhanced radiative efficiency in blue InGaN MQW LEDs with an electron reservoir layer |
Y. Takahashi, A. Satake, K. Fujiwara, J. K. Sheu, U. Jahn, H. Kostial, H. T. Grahn |
Physica E: Low-Dimensional Systems and Nanostructures
|
| 2004-03 |
研討會論文
|
Monolithic InGaN/GaN light-emitting diodes with near white-light emission from crossed blue/green quantum well structure |
T. C. Wen, J. K. Sheu, W. C. Lai, J. M. Tsai, Y. P. Shu, C. H. Ko, L. W. Wu, M. L. Lee, P. T. Wang, C. S. Chang, S. J. Chang , Y. K. Su |
|
| 2004-02 |
期刊論文
|
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs |
Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang, S. C. Shei |
Journal of Crystal growth
|
| 2004-01 |
期刊論文
|
Gratings in GaN Membranes |
Chii-Chang Chen, Chia-Hung Hou, Jinn-Kong Sheu, Jenq-Yang Chang, Ming-Hung Li, Gou-Chung Chi, Chuck Wu |
Japanese Journal of Applied Physics
|
| 2004-01 |
期刊論文
|
Nitride-based near-ultraviolet LEDs with an ITO transparent contact |
C. H. Kuo, S. J. Chang, Y. K. Su, R. W. Chuang, C. S. Chang, L.W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, J. M. Tsai |
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
|
| 2003-12 |
期刊論文
|
Experimental study of perpendicular transport in weakly coupled AlxGa1–xN/GaN superlattices |
E. L. Waldron, Y.-L. Li, E. F. Schubert, J. W. Graff, J. K. Sheu |
Applied Physics Letters
|
| 2003-12 |
研討會論文
|
GaN diffractive microlenses for UV micro-optics system |
Hou, C.C. ,Li, M.H. ,Chen, C.C. ,J. K. Sheu ,Chang, J.Y. ,Chi, G.C. ,Chuck Wu ,Cheng, W.T. , Yeh, J.H |
|
| 2003-12 |
研討會論文
|
Improved ESD reliability by using a modulation doped Al/sub 0.12/Ga/sub 0.88/N/GaN superlattice in nitride-based LED |
Wen, T.C. ,Chang, S.J ,Su, Y.K. , Wu, L.W. ,Kuo, C.H. ,Hsu, Y.P. ,Lai, W.C. ,J. K. Sheu |
|
| 2003-11 |
期刊論文
|
High brightness InGaN green LEDs with an ITO on n++-SPS upper contact |
C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, J. K. Sheu |
IEEE Transactions on Electron Devices
|
| 2003-11 |
期刊論文
|
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer |
L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, J. K. Sheu |
Solid-State Electronics
|
| 2003-11 |
期刊論文
|
Nitride-based blue LEDs with GaN/SiN double buffer layers |
C. H. Kuo, S. J. Chang, Y. K. Su, C. K.Wang, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai |
Solid-State Electronics
|
| 2003-10 |
期刊論文
|
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode |
C. S. Chang, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu |
Physica Status Solidi (c)
|
| 2003-10 |
期刊論文
|
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature |
Ru-Chin Tu, Shyi-Ming Pan, Chang-Cheng Chuo, Chun-Ju Tun, J. K. Sheu, Ching-En Tsai, Te-Chung Wang, Gou-Chung Chi |
IEEE Photonics Technology Letters
|
| 2003-10 |
期刊論文
|
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates |
S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang |
Physica Status Solidi (c)
|
| 2003-09 |
研討會論文
|
400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes |
Chang, S.J. , Kuo, C.H .,Su, Y.K., Wu, L.W.,Sheu J. K ,Wen, T.C. ,Lai, W.C. ,Chen J.F. , Tsai, J.M |
|
| 2003-09 |
研討會論文
|
Low Temperature p-GaN rough layer on In0.23Ga0.77N/GaN MQW LEDs |
L. W. Wu, S. J. Chang, Y. K. Su, W. C. Lai, J. K. Sheu |
|
| 2003-09 |
研討會論文
|
UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors |
Y. K. Su, J. K. Sheu |
|
| 2003-08 |
期刊論文
|
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer |
M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, J. M. Tsai, G. C. Chi |
Journal of Applied Physics
|
| 2003-08 |
期刊論文
|
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes through Higher Pressure Grown Underlying GaN Layers |
Ru-Chin Tu, Chun-Ju Tun, Shyi-Ming Pan, Hai-Ping Liu, Ching-En Tsai, J. K. Sheu, Chang-Cheng Chuo, Te-Chung Wang, Gou-Chung Chi, In-Gann Chen |
IEEE Photonics Technology Letters
|
| 2003-08 |
期刊論文
|
Nitride-Based Green Light-Emitting Diodes With High Temperature GaN Barrier Layers |
L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai, J. K. Sheu |
IEEE Transactions on Electron Devices
|
| 2003-07 |
期刊論文
|
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
Y.-L. Li, Th. Gessmann, E. F. Schubert, J. K. Sheu |
Journal of Applied Physics
|
| 2003-07 |
期刊論文
|
GaInN light-emitting diodes with omni-directional reflectors |
T. Gessmann, Y.-L. Li, E. F. Schubert, J. W. Graff, J. K. Sheu |
Proceedings of SPIE (The International Society for Optical Engineering)
|
| 2003-07 |
期刊論文
|
Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System |
Chia-Hung Hou, Ming-Hung Li, Chii-Chang Chen, Jenq-Yang Chang, Jinn-Kong Sheu, Gou-Chung Chi, Chuck Wu, Wei-Tai Cheng, Jui-Hung Yeh |
Optical Review
|
| 2003-06 |
研討會論文
|
CLEO 2003 summary - Light-emitting diodes with onmi-directional reflectors |
Gessmann, Th. Li, Y.-L ,Graff, J.W. ,Schubert, E.F. ,Streubel, K. ,J. K. Sheu |
|
| 2003-05 |
期刊論文
|
Deep level defect in Si-implanted GaN n+-p junction |
X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, S. J. Chang, G. C. Chi |
Applied Physics Letter
|
| 2003-05 |
期刊論文
|
InGaN/GaN LEDs with a Si-Doped InGaN/GaN Short-Period Superlattice Tunneling Contact Layer |
L. W. Wu, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen, B. R. Huang |
Journal of Electronic Materials
|
| 2003-05 |
期刊論文
|
InGaN/GaN Multiple Quantum Well Green Light-Emitting Diodes Prepared by Temperature Ramping |
T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai, J. K. Sheu, T. Y. Tsai |
Journal of Electronic Materials
|
| 2003-05 |
期刊論文
|
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer |
J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su, J. M. Tsai |
Journal of Electronic Materials
|
| 2003-05 |
期刊論文
|
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, S. C. Chen |
Journal of Electronic Materials
|
| 2003-05 |
期刊論文
|
Nitride-based near UV MQW LEDs with AlGaN barrier layers |
S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai |
Journal of Electronic Materials
|
| 2003-04 |
期刊論文
|
An UV+Blue/Green/Red White Light Emitting Diode Lamps |
Cheng-Huang Kuo, J. K. Sheu, Shoou-Jinn Chang, Yan-Kuin Su, Liang-Wen Wu, Ji-Ming Tsai, C. H. Liu, R. K. Wu |
Japanese Journal of Applied Physics
|
| 2003-04 |
期刊論文
|
Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry |
Yi-Sheng Ting, Chii-Chang Chen, J. K. Sheu, Gou-Chung Chi, Jung-Tsung Hsu |
Journal of Electronic Materials
|
| 2003-04 |
期刊論文
|
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai, G. C. Chi |
Applied Physics Letter
|
| 2003-04 |
期刊論文
|
GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer |
Cheng-Huang Kuo, Shoou-Jinn Chang, Yan-Kuin Su, Liang-Wen Wu, Jone F. Chen, J. K. Sheu, Ji-Ming Tsai |
Japanese Journal of Applied Physics
|
| 2003-04 |
期刊論文
|
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
Ru-Chin Tu, Chun-Ju Tun, J. K. Sheu, Wei-Hong Kuo, Te-Chung Wang, Ching-En Tsai, Jung-Tsung Hsu, Jim Chi, Gou-Chung Chi |
IEEE Electron Device Letter
|
| 2003-04 |
期刊論文
|
Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer |
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, J. M. Tsai |
IEEE Electron Device Letter
|
| 2003-03 |
期刊論文
|
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN schottky diodes |
S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu, S. C. Chen |
IEEE Electron Device Letter
|
| 2003-03 |
研討會論文
|
GaN-based visible-blind photodetectors |
J. K. Sheu, G. C. Chi, Y. K. Su |
|
| 2003-03 |
研討會論文
|
UV, Blue, Green, Yellow-green and white LEDs fabricated by III-N semiconductors |
Y. K. Su, J. K. Sheu |
|
| 2003-02 |
期刊論文
|
Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer |
C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, J. K. Sheu, J. M. Tsai |
IEEE Transactions on Electron Devices
|
| 2003-02 |
期刊論文
|
Si and Zn co-doped InGaN-GaN white light-emitting diodes |
S. J. Chang , L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, S. F. Chen, J. M. Tsai |
IEEE Transactions on Electron Devices
|
| 2003-01 |
期刊論文
|
GaN diffractive microlenses fabricated with gray-level mask |
Chii-Chang Chen, Ming-Hung Li, J. K. Sheu, Gou-Chung Chi, Wei-Tai Cheng, Jui-Hung Yeh, Jenq-Yang Chang, Toshiaki Ito |
Optics Communications
|
| 2003-01 |
期刊論文
|
White-Light Emission From Near UV InGaN-GaN LED Chip Precoated With Blue/Green/Red Phosphors |
J. K. Sheu, C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu, G. C. Chi |
IEEE Photonics Technology Letters
|
| 2002-12 |
期刊論文
|
GaN p-n junction diode formed by Si ion implantation into p-GaN |
M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang, G. C. Chi |
Solid-State Electronics
|
| 2002-12 |
期刊論文
|
Low temperature activation of Mg-doped GaN in O2 ambient |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi |
Japanese Journal of Applied Physics
|
| 2002-12 |
期刊論文
|
Polymer PBT/n-GaN metal-insulator-semiconductor structure |
L. W. Tu, P. H. Tsao, K. H. Lee, Ikai Lo, S. J. Bai, C. C. Wu, K. Y. Hsieh, J. K. Sheu |
Applied Physics Letter
|
| 2002-12 |
研討會論文
|
Efficiency analysis of GaN-based LED with interdigitated mesa geometry |
Ting-Yi Sheng, Chii-Chang Chen, Jinn-Kong Sheu, Gou-Chung Chi, Jung-Tsung Hsu |
|
| 2002-12 |
研討會論文
|
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices |
C. H. Kuo, J. K. Sheu, G. C. Chi, Y. L. Huang, T. W. Yeh |
|
| 2002-11 |
期刊論文
|
Planar GaN ultraviolet photodetectors formed by Si implants into p-GaN |
J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, M. J. Chen, G. C. Chi |
Applied Physics Letter
|
| 2002-09 |
研討會論文
|
In0.05Ga0.95N/Al0.1Ga0.9N UV LEDs precoated with blue, green and red phosphors |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai, R. K. Wu |
|
| 2002-09 |
研討會論文
|
GaN-based Light-emitting Diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai |
|
| 2002-09 |
研討會論文
|
High indium content InGaN/GaN MQW Yellowish green Light-emitting Diodes |
C. H. Chen, Y. K. Su, S. J. Chang, L. W. Wu, G. C. Chi, J. K. Sheu |
|
| 2002-09 |
研討會論文
|
InGaN/AlGaN LEDs precoated with blue, green and red phosphors |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai, R. K. Wu |
|
| 2002-08 |
期刊論文
|
400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes |
S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2002-08 |
期刊論文
|
Characterization of Si implants in p-type GaN |
J. K. Sheu, M. L. Lee , C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2002-08 |
期刊論文
|
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes |
C. H. Chen, S. J. Chang,Y. K. Su, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, J. M. Tsai |
IEEE Sensors Journal
|
| 2002-08 |
期刊論文
|
The doping process and dopant characteristics of GaN |
J. K. Sheu and G. C. Chi |
Journal of Physics
|
| 2002-07 |
期刊論文
|
Nitride-based cascade near white light emitting diodes |
C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, Y. C. Lin |
IEEE Photonics Technology Letters
|
| 2002-06 |
期刊論文
|
InGaN/GaN tunnel-injection blue light-emitting diodes |
T. C. Wen, S. J. Chang, L. W. Wu , Y. K. Su,W. C. Lai, C. H. Kou, C. H. Chen, J. K. Sheu |
IEEE Transactions on Electron Devices
|
| 2002-06 |
期刊論文
|
Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure |
L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen , C. J. Kao, G. C. Chi, S. J. Chang, Y. K. Su |
Solid-State Electronics
|
| 2002-05 |
期刊論文
|
Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure |
Chii-Chang Chen, Kun-Long Hsieh, J. K. Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin |
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
|
| 2002-05 |
期刊論文
|
InGaN/GaN light emitting diodes activated in O2 ambient |
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi |
IEEE Electron Device Letter
|
| 2002-05 |
期刊論文
|
Influence of Si-doping on the characteristics of InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes |
L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai , C. H. Kou, C. H. Chen, J. K. Sheu |
IEEE Journal of Quantum Electronics
|
| 2002-04 |
期刊論文
|
High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures |
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, J. F. Chen |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2002-04 |
期刊論文
|
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching |
T. C. Wen, W. I. Lee, J. K. Sheu, G. C. Chi |
Solid-State Electronics
|
| 2002-04 |
期刊論文
|
Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures |
I-kai Lo, J. K. Tsai, Li-Wei Tu, K. Y. Hsieh, M. H. Tsai, C. S. Liu, J. H. Huang, S. Elhamri, W. C. Mitchel, J. K. Sheu |
Applied Physics Letter
|
| 2002-04 |
期刊論文
|
White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn co-doped active well layer |
J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kou, L. W. Wu, C. H. Chen, S. J. Chang, Y. K. Su |
IEEE Photonics Technology Letters
|
| 2002-03 |
期刊論文
|
High-brightness green light emitting diodes with charge asymmetric resonance tunneling structure |
C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu , Y. H. Laiw |
IEEE Electron Device Letter
|
| 2002-03 |
研討會論文
|
InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
J. K. Sheu, R. C. Tu, C. J. Tun, C. J. Kao, G. C. Chi |
|
| 2002-03 |
研討會論文
|
Recent progresses on superlattice doping of ternary III-nitrides |
E. F. Schubert, J. W. Graff, E. L. Waldron, Y.-L. Li, Th. Gessmann, J. K. Sheu |
|
| 2002-02 |
期刊論文
|
Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa 1-xN Capping Layers |
T.Gessmann , Y. L Li ., E. L.Waldron, J. W.Graff , E. F.Schubert , J. K. Sheu |
Journal of Electronic Materials
|
| 2002-02 |
期刊論文
|
Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers |
T. Gessmann, Y.-L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, J. K. Sheu |
Applied Physics Letter
|
| 2002-02 |
期刊論文
|
n+-GaN formed by Si implantation into p-GaN |
J. K. Sheu, M. S. Tsai, C. J. Tun, G. C. Chi |
Journal of Applied Physics
|
| 2001-12 |
研討會論文
|
Dependence of optical gain ondirection of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure |
Chii-Chang Chen, Kun-Long Hsieh, Jinn-Kong Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin |
|
| 2001-12 |
研討會論文
|
InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
J. K. Sheu, C. J. Tun, C. J. Kao, G. C. Chi, J. M. Tsai, S. C. Shei |
|
| 2001-12 |
研討會論文
|
Optical Gain of Optically Pumped Cavity on (0001)-plane for GaN-based Multiple Quantum Well Structures |
Chii-Chang Chen, Kun-Long Hsieh, Jinn-Kong Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin |
|
| 2001-11 |
期刊論文
|
Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode an InGaN Current-Spreading Layer |
J. K. Sheu, G. C. Chi, M. J. Jou |
IEEE Photonics Technology Letters
|
| 2001-11 |
期刊論文
|
Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode with asymmetric wells |
32. J. K. Sheu, G. C. Chi, and M. J. Jou |
IEEE Photonics Technology Letters
|
| 2001-10 |
期刊論文
|
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi |
IEEE Electron Device Letter
|
| 2001-09 |
期刊論文
|
Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices |
J. K. Sheu, C. H. Kuo, G. C. Chi, C. C. Chen, M. J. Jou |
Solid-State Electronics
|
| 2001-09 |
期刊論文
|
Crystal orientation dependence of optical gain in InGaN/GaN multiple quantum well structure |
Chii-Chang Chen, Kun-Long Hsieh, J. K. Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin |
Applied Physics Letter
|
| 2001-08 |
期刊論文
|
GaN metal-semiconductor-metal Ultraviolet photodetectors with transparent indium-tin -oxide Schottky contacts |
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, J. F. Chen |
IEEE Photonics Technology Letters
|
| 2001-06 |
期刊論文
|
InGaN-AlInGaN Multiquantum well LEDs |
W.C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu, J. F. Chen |
IEEE Photonics Technology Letters
|
| 2001-04 |
期刊論文
|
GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals |
Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang, J. K. Sheu |
Japanese Journal of Applied Physics
|
| 2001-04 |
期刊論文
|
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice |
J. K. Sheu, G. C. Chi, M. J. Jou |
IEEE Electron Device Letter
|
| 2001-04 |
期刊論文
|
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices |
C. H. Kuo, J. K. Sheu , G. C. Chi, Y. L. Huang , T.W. Yeh |
Solid-State Electronics
|
| 2001-04 |
期刊論文
|
Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching |
Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Gou Chung Chi, J. K. Sheu, I Chao Lin |
Japanese Journal of Applied Physics
|
| 2001-03 |
期刊論文
|
Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition |
T. C. Wen, W. I. Lee, J. K. Sheu, G. C. Chi |
Solid-State Electronics
|
| 2000-12 |
期刊論文
|
High-dielectric-constantTa2O5/n-GaN metal-oxide-semiconductor structure |
L. W. Tu, W. C. Kuo, K. H. Lee, P. H. Tsao, C. M. Lai, A. K. Chu, J. K. Sheu |
Applied Physics Letter
|
| 2000-12 |
期刊論文
|
The formation of Ti / Al Ohmic contact on etched n-GaN surfaces |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung, J. S. Bow, Y. C. Yu |
Journal of Vacuum Science and Tcehnology B
|
| 2000-09 |
研討會論文
|
Improved electrical property of InGaN/GaN light-emitting diodes by using a Mg-doped AlGaN/GaN superlattices |
J. K. Sheu, G. C. Chi, C. C. Chen, C. C. Liu, C. M. Chang, M. J. Jou |
|
| 2000-08 |
期刊論文
|
Ohmic contacts and reactive ion beam etching for p-type GaN |
F. S. Chung, S. J. Chang, Y. K. Su, C. J. Chen, J. K. Sheu |
Journal of the Chinese Institute of Electrical Engineering
|
| 2000-07 |
期刊論文
|
Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou |
Journal of The Chinese Institute of Electrical Engineering
|
| 2000-07 |
研討會論文
|
InGaN/GaN multi-quantum well light-emitting diodes grown by low-pressure metalorganic vapor phase epitaxy |
G. C. Chi, J. K. Sheu, M. J. Jou |
|
| 2000-06 |
期刊論文
|
Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode |
J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, M. J. Jou |
Solid-State Electronics
|
| 2000-06 |
期刊論文
|
Optical properties in InGaN/GaN multiple quantum wells and blue LEDs |
Y. K. Su, G. C. Chi, J. K. Sheu |
Optical materials
|
| 2000-06 |
期刊論文
|
The Doping Process of p-type GaN Films |
G. C. Chi, C. H. Kou, J. K. Sheu, C. J. Pan |
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
|
| 2000-05 |
研討會論文
|
High performance GaN-based Multi-Quantum Well Blue light-emitting Diodes |
Y. K. Su, J. K. Sheu, G. C. Chi, M. J. Jou |
|
| 2000-04 |
期刊論文
|
Ohmic contacts to GaN with rapid thermal annealing |
L. W. Chi, K. T. Lam, Y. K. Kao, F. S. Juang, Y. S. Tasi, Y. K. Su, S. J. Chang, J. K. Sheu |
Proceedings of SPIE (The International Society for Optical Engineering)
|
| 2000-01 |
研討會論文
|
Growth and Characterization of InGaN/GaN Multi-Quantum Well Blue light-emitting Diodes |
G. C. Chi, J. K. Sheu, M. J. Jou |
|
| 2000-01 |
研討會論文
|
Ohmic contacts to GaN with rapid thermal annealing |
L. W. Chi, K. T. Lam, Y. K. Kao, F. S. Jung, Y. S. Tsai, S. J. Cang, C. C. Chen, J. K. Sheu |
|
| 1999-11 |
期刊論文
|
The indium tin oxide Ohmic contact to highly doped n-GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu |
Solid-State Electronics
|
| 1999-11 |
研討會論文
|
Characteristics of an InGaN/GaN multiple quantum well light-emitting diode |
J. K. Sheu, G. C. Chi, M. J. Jou |
|
| 1999-07 |
研討會論文
|
Optical properties in InGaN/GaN multi-quantum wells and blue LEDs |
Y. K. Su, G. C. Chi, J. K. Sheu |
|
| 1999-04 |
期刊論文
|
High-transparency Ni / Au Ohmic Contact to P-Type GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung |
Applied Physics Letter
|
| 1999-02 |
期刊論文
|
Inductively Coupled Plasma Etching of GaN using Cl2/Ar and Cl2/N2 gases |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung |
Journal of Applied Physics
|
| 1998-12 |
研討會論文
|
Inductively Coupled Plasma Etching of GaN using Cl2/N2 gases |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung |
|
| 1998-10 |
期刊論文
|
Electrical Derivative Characteristics of Ion-implanted AlGaInP/GaInP Multi-quantum Well Lasers |
J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu, C. C. Chiu |
Solid-State Electronics
|
| 1998-10 |
期刊論文
|
Photoluminescence spectroscopy of Mg-doped GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang, W. C. Chen |
Journal of Applied Physics
|
| 1998-09 |
研討會論文
|
High-transparency Ni / Au Ohmic Contact to P-Type GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung |
|
| 1998-08 |
期刊論文
|
Investigations of Wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes |
J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, C. C. Liu, G. C. Chi |
IEEE Optoelectronics
|
| 1998-06 |
期刊論文
|
Effects of Thermal Annealing on the ITO Schottky Contacts of n-GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou , C. M. Chang |
Applied Physics Letter
|
| 1998-03 |
期刊論文
|
The Effects of Thermal Annealing on Ni/Au contacts of P-type GaN |
J. K. Sheu, Y. K. Su, G. C. Chi, C. Y. Chen, C. N. Huang, W. C. Chen, H. M. Hong, Y. C. Yu, C. W. Wang, E. K. Lin |
Journal of Applied Physics
|
| 1996-03 |
研討會論文
|
Orange AlGaInP/GaP Light Emitting Diodes fabricated by Wafer Bonding |
J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, G. C. Chi |
|
| 1996-02 |
研討會論文
|
Ion-implanted AlGaInP/GaInP MQW Laser Diodes |
J. K. Sheu, Y. K. Su, S. J. Chang, C. C. Liu, S. S. Ou, C. C. Kuo, G. C. Chi |
|
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