研究人才詳細資料
主要學歷
| 出版年月 | 著作類別 | 著作名稱 | 作者 | 收錄出處 |
|---|---|---|---|---|
| 2022-11 | 期刊論文 | Very Low-Efficiency Droop in 293-nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer | Mu-Jen Lai, Yi-Tsung Chang, Shu-Chang Wang, Shiang-Fu Huang, Rui-Sen Liu, Xiong Zhang, Lung-Chien Chen, Ray-Ming Lin | Molecules |
| 2022-08 | 期刊論文 | Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes | Yi-Tsung Chang, Mu-Jen Lai,* Rui-Sen Liu, Shu-Chang Wang, Xiong Zhang, Lin-Jun Zhang, Yu-Hsien Lin, Shiang-Fu Huang, Lung-Chien Chen and Ray-Ming Lin* | Crystals |
| 2021-11 | 期刊論文 | Strain compensation and trade-off design result in exciton emission at 306 nm from AlGaN LEDs at temperatures up to 368 K | Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Tsung-Yen Liu and Ray-Ming Lin | Materials |
| 2021-09 | 期刊論文 | Epoxy Molding Compound Lead Frames with Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes | Tsung-Yen Liu, Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Yi-Tsung Chang, Wen-Hong Sun and Ray-Ming Lin | IEEE Access |
| 2021-09 | 期刊論文 | Observation of Highly Durable Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes | Mu-Jen Lai, Rui-Sen Liu, Tsung-Yen Liu, Shih-Ming Huang, Ray-Ming Lin, Yi-Tsung Chang, Jian-Bin Wu, Wen-Hong Sun, Xiong Zhang and Lung-Chien Chen | Applied Sciences |
| 2021-08 | 期刊論文 | Narrow-band AlGaN-based UVB light-emitting diodes | Tsung-Yen Liu, Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Xiong Zhang, Yi-Tsung Chang, Lin-Jun Zhang and Ray-Ming Lin | ACS Applied Electronic Materials |
| 2020-12 | 期刊論文 | Modulation and Refinement of InN re-Bonding of InGaN Through in Post-Flow During a Refined Temper Fire Treatment Process | TSUNG-YEN LIU, LUNG-CHIEN CHEN, CHENG-CHE LEE, YU CHENG, CHIEH-HSIUNG KUAN AND RAY-MING LIN | IEEE Access |
| 2020-10 | 研討會論文 | Suppression of InGaN-based quantum-well indium desorption by indium source supply | Yu-Cheng, Tsung-Yen Liu, Chieh-Hsiung Kuan and Ray-Ming Lin | |
| 2020-01 | 期刊論文 | Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method | Lung-Chien Chen, Kuan-Lin Lee, Kun-Yi Lee, Yi-Wen Huang and Ray-Ming Lin | Sensors |
| 2019-06 | 期刊論文 | Suppression of “volcano” morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy | Chia-Yen Huang, Tsung-Yen Liu, Shih-Ming Huang, Kai-Hsiang Chang, Tsu-Ying Tai, Chieh-Hsiung Kuan, Joseph Tung-Chieh Chang, Ray-Ming Lin, Hao-Chung Kuo | Results in Physics |
| 2018-11 | 研討會論文 | Improvement of Si-doped n-AlGaN crystalline quality by adjusting V/III ratio | Tsung-Yen Liu, Po-Jen Hsieh , Chieh-Hsiung Kuan and Ray-Ming Lin | |
| 2018-03 | 期刊論文 | A broadband achromatic metalens in the visible | Shuming Wang, Pin Chieh Wu, Vin-Cent Su, Yi-Chieh Lai, Mu-Ku Chen, Hsin Yu Kuo4, Bo Han Chen, Yu Han Chen, Tzu-Ting Huang, Jung-Hsi Wang, Ray-Ming Lin, Chieh-Hsiung Kuan, Tao Li1, Zhenlin Wang, Shining Zhu and Din Ping Tsai | Nature Nanotechnology |
| 2017-12 | 研討會論文 | Optimized AlN epitaxy parameter under 1180 ℃ by low-pressure metal organic chemical vapor deposition on AlN template | Tsung-Yen Liu, Soumen Mazumder, Yu-Tsung Liao, Po-Jen Hsieh, Chieh-Hsiung Kuan, Ray-Ming Lin | |
| 2017-09 | 研討會論文 | Improvement of Vth shift of the multi-mesa-channel GaN HEMTs by sidewall surface state effect modulation. | Soumen Mazumder, Yu-Tsung Liao, Wen-Hsin Wu, Tsung-Yen Liu and Ray-Ming Lin | |
| 2017-08 | 期刊論文 | The origin and mitigation of volcano-like morphologies in micron-thick AlGaN/AlN heteroepitaxy | Chia-Yen Huang, Kai-Shiang Chang, Cheng-Yao Huang, Yun-Hsiang Lin, Wei-Chih Peng, Hung-Wei Yen, Ray-Ming Lin and Hao-Chung Kuo | APPLIED PHYSICS LETTERS |
| 2017-06 | 期刊論文 | Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length | Chien-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, and Ray-Ming Lin | Nanoscale Research Letters |
| 2015-09 | 期刊論文 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs | Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, Sheng-Fu Yu, Chung-Ting Ko, Jer-Ren Yang, Ray-Ming Lin,*, Miin-Jang Chen,* |
科學報導 Scientific Reports |
| 2015-09 | 研討會論文 | Enhanced light extraction from lateral side of InGaN-based LEDs grown on Nano-sized patterned sapphire substrates | Yao-Hong You1, Wen-Hsin Wu2, Bo-Wen Lin3, Wen-Ching Hsu4, Vin-Cent Su2, Ming-Lun Lee 2, Po-Hsun Chen 2, Chieh-Hsiung Kuan 1 and Ray-Ming Lin2, | |
| 2015-09 | 研討會論文 | Enhanced light intensity of InGaN-based LEDs grown on molybdenum patterned sapphire substrates | Wen-Hsin Wu1, Yao-Hong You2, Vin-Cent Su2, Ming-Lun Lee2, Po-Hsun Chen2, Chieh-Hsiung Kuan2 and Ray-Ming Lin | |
| 2015-09 | 研討會論文 | High performance of AlGaN/GaNHEMT device with embedded multiple graphene layers | Chia-Yu Lee1*, Yu-Pin Lan2, Yih-ShiuanGau3, Chia-HsinChen3, Ray-Ming Lin3*and Chun-Yen Chang | |
| 2015-07 | 期刊論文 | Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2 | Y.H. You, F.C. Chu, H.C. Hsieh, W.H. Wu, M.L. Lee, C.H. Kuana and R.M. Lin, | RSC Advances |
| 2014-11 | 期刊論文 | Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs | Yao-Hong You, Vin-Cent Su, Ti-En Ho, Bo-Wen Lin, Ming-Lun Lee, Atanu Das, Wen-Ching Hsu, Chieh-Hsiung Kuan and Ray-Ming Lin | Nanoscale Research Letters |
| 2014-09 | 期刊論文 | Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate | Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, Yu-Pin Lan, Ching-Hsueh Chiu, Gou-Chung Chi, Chi-Hsiang Chen, Hao-Chung Kuo, Ray-Ming Lin* and Chun-Yen Chang | Nanoscale Research Letters |
| 2014-09 | 期刊論文 | Highly Sensitive Palladium Oxide Thin Film Extended Gate FETs as pH Sensor | Atanu Das, Danny Hsu Koa, Chia-Hsin Chena, Liann-Be Chang, Chao-Sung Lai, Fu-Chuan Chua, Lee Chow, Ray-Ming Lin | Sensors and Actuators B: Chemical |
| 2014- | 期刊論文 | Influence of Pre-trimethylindium flow treatment on blue light | Bing Xu , Jun Liang Zhao , Hai Tao Dai , Shu GuoWang , Ray-Ming Linb, Fu-Chuan Chu,Chou-Hsiung Huang , Sheng-Fu Yu, Xiao Wei Sun | Thin Solid Films |
| 2013-10 | 期刊論文 | Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer | Ray-Ming Lin, Fu-Chuan Chu, Atanu Das, Sheng-Yu Liao, and Vin-Cent Su | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 2013-10 | 期刊論文 | Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric | Ray-Ming Lin, Fu-Chuan Chu, Atanu Das, Sheng-Yu Liao, Shu-Tsun Chou, Liann-Be Chang | Thin Solid Films |
| 2012-09 | 期刊論文 | Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs | S. F. Yu, Ray-Ming Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, and Z. Y. Jiao | IEEE Journal of Display Technology |
| 2012-08 | 期刊論文 | Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes | Ray-Ming Lin*, Sheng-Fu Yu, Shoou-Jinn Chang, Tsung-Hsun Chiang, Sheng-Po Chang, and Chang-ho Chen | APPLIED PHYSICS LETTERS |
| 2012-06 | 期刊論文 | Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights | Sheng-Fu Yu, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Ming Lin, Hsin-Hung Wu, and Wen-Ching Hsu | Journal of Nanomaterials |
| 2012-02 | 期刊論文 | Effect of trapezoidal-shaped well on efficiency droop in InGaN-based double-heterostructure light-emitting diodes | Ray-Ming Lin*, Mu-Jen Lai, Liann-Be Chang, Chou-Hsiung Huang and Chang-ho Chen | International Journal of Photoenergy |
| 2012-02 | 期刊論文 | SideWallWet Etching Improves the Efficiency of Gallium Nitride Light Emitting Diodes | Ray-Ming Lin∗, and Jen-Chih Li | Journal of The Electrochemical Society, |
| 2012-01 | 期刊論文 | Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes | Sheng-Fu Yu, Ray-Ming Lin, Shoou-Jinn Chang, and Fu-Chuan Chu | Applied Physics Express |
| 2011-06 | 期刊論文 | An Observation of Charge Trapping Phenomena in GaN/AlGaN/Gd2O3/Ni-Au Structure | Liann Be Chang, Atanu Das, Ray Ming Lin*, Siddheswar Maikap, Ming Jer Jeng and Shu Tsun Chou | Appl. Phys. Lett. |
| 2011-06 | 期刊論文 | Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates | Mu-Tao Chu, Wen-Yih Liao, Ray-Hua Horng, Tsung-Yen Tsai, Tsai-Bau Wu, Shu-Ping Liu; Wu, Ming-Hsien Wu, and Ray-Ming Lin | IEEE Electron Device Lett |
| 2011-05 | 期刊論文 | ”Improvement of surface emission for GaN-based light-emitting diodes with a metal-via-hole structure embedded in a reflector | Yi-Lun Chou, Ray-Ming Lin, Min-Hung Tung, Chia-Lung Tsai, Jen-Chih Li, I.-Chun Kuo, Meng-Chyi Wu | IEEE Photonics Technology Letters, |
| 2011-04 | 期刊論文 | Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes | Liann-Be Chang, Mu-Jen Lai, Ray-Ming Lin*, and Chou-Hsiung Huang | Applied Physics Express |
| 2010-11 | 期刊論文 | Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes | Ray-Ming Lin, Mu-Jen Lai, Liann-Be Chang, and Chou-Hsiung Huang | Appl. Phys. Lett |
| 2010-07 | 期刊論文 | Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes | Mu-Jen Lai, Liann-Be Chang, Ray-Ming Lin, and Chou-Shuang Huang | Applied Physics Express |
| 2010-07 | 期刊論文 | Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD with increasing hydrogen flow rate | Mu-Jen Lai, Liann-Be Chang, Tzu-Tao Yuan, and Ray-Ming Lin | Crystal Research and Technology |
| 2010-05 | 期刊論文 | Effect of Silicon Doping on Performance of 30-Pair InxGa1-xN/GaN Quantum Well Solar Cells | Ming-Jer Jeng, Te-Wen Su, Yu-Lin Lee, Yuan-Hsiao Chang, Liann-Be Chang, Ray-Ming Lin, Jhong-Hao Jiang, and Yuan-Chieh Lu | Jpn. J. Appl. Phys |
| 2010-04 | 期刊論文 | Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs | Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, and Meng-Ch | Microelectronics Reliability |
| 2010-02 | 期刊論文 | Low hysteresis dispersion La2O3 AlGaN/GaN MOS-HEMTs | Hsien-Chin Chiu,Chao-Wei Lin,Chao-Hung Chen,Chih-Wei Yang,Che-Kai Lin,Jeffrey S Fu,Liann-Be Chang,Ray-Ming Lin,Kuang-Po Hsueh | Journal of the Electrochemical Society |
| 2009-10 | 期刊論文 | Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates | Ray-Ming Lin*, Yuan-Chieh Lu, Sheng-Fu Yu, YewChung Sermon Wu, Chung-Hao Chiang, Wen-Ching Hsu, and Shoou-Jinn Chang | Journal of Electrochemical Society |
| 2009-07 | 期刊論文 | Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells | Ray-Hua Horng, Shih-Ting Lin, Yu-Li Tsai, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu | IEEE ELECTRON DEVICE LETTERS |
| 2009-06 | 期刊論文 | Thermal Stability for Reflectance and Specific Contact Resistance of Ni/Ag-Based Contacts on p-Type GaN | Ray-Ming Lin*, Yi-Lun Chou, Wan-Ching Tseng, Chia-Lung Tsai, Jen-Chih Li, and Meng-Chyi Wu | Electrochemical and Solid-State Letters |
| 2009-06 | 期刊論文 | Thermal Stability for Reflectance and Specific Contact Resistance of Ni/Ag-Based Contacts on p-Type GaN | Ray-Ming Lin, Yi-Lun Chou, Wan-Ching Tseng, Chia-Lung Tsai, Jen-Chih Li, and Meng-Chyi Wu | Electrochemical and Solid-State Letters |
| 2008-07 | 期刊論文 | Enhanced Characteristics of blue InGaN/GaN Light-Emitting Diodes by using selective activation to modulate the lateral current spreading length | 林瑞明*,呂元傑,周以倫,陳國興,林永翔,吳孟奇 | Applied Physics Letters |
| 2007-06 | 期刊論文 | Improving the Luminescence of InGaN–GaN Blue LEDs Through Selective Ring-Region Activation LEDs Through Selective Ring-Region Activation of the Mg-doped GaN Layer | Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, Kuo-Hsing Chen, Yung-Hsiang Lin, Yuan-Chieh Lu, Meng-Chyi W | IEEE PHOTONICS TECHNOLOGY LETTERS |
| 2006-10 | 期刊論文 | Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells | Yen-Lin Lai, Chuan-Pu Liu, Yung-Hsiang Lin, Ray-Ming Lin, Dong-Yuan Lyu,Zhao-Xiang Peng,Tai-Yuan Lin | APPLIED PHYSICS LETTERS |
| 2006-08 | 期刊論文 | Using the Taguchi method to improve the brightness of AlGaInP MQW LED by wet oxidation | Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, and Meng-Chyi Wu | IEEE PHOTONICS TECHNOLOGY LETTERS |
| 2005-05 | 期刊論文 | Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers | 34. Tzer-En Nee, Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang, Ruey-Yu Wang | J. Vac. Sci. Technol. B |
| 2005-05 | 期刊論文 | Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure | 林瑞明 | J. Crystal Growth |
| 2004-06 | 期刊論文 | Surface Morphology and Photoluminescence of InAs Quantum Dots Grown on [110]-Oriented Streaked Islands Under Ultra-low V/III Ratio | 林瑞明 | IEEE Trans. On NANOTECHNOLOGY |
| 2004-05 | 期刊論文 | Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers | Tzer-En Nee*, Chao-Ching Cheng and Ray-Ming Lin | Jpn. J. Appl. Phys |
| 2004-05 | 期刊論文 | Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy | Ray-Ming Lin*, Chao-Ching Cheng, Hui-Tang Shen, and Tzer-En Nee | J. Vac. Sci. Technol. A |