| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2024-05 |
期刊論文
|
Photoluminescence of Monolayer WSe2 Enhanced by the Exciton Funnel E®ect and the Interfacial Carrier Tunneling E®ect When Integrated with 3D Si Wrinkled Structures |
Yanhui Lv, Gang Wu, Guo-En Chang, Cormac Ó Coileain, Kuan-Ming Hung, Sunil K. Arora, Ching-Ray Chang, H. H. Cheng and Han-Chun Wu |
SPIN
|
| 2023-11 |
期刊論文
|
Strain-Dependent Optical Properties of Monolayer WSe2 |
Yanhui Lv, Mohamed Abid, H. H. Cheng, Cormac Ó Coileain, R. G. S Sofin, Ching-Ray Chang, and Han-Chun Wu, |
J. Phys. Chem. C
|
| 2023-08 |
期刊論文
|
Dark current analysis on GeSn p-i-n photodetectors |
Soumava Ghosh, Greg Sun, Timothy A. Morgan, Gregory T. Forcherio, Hung-Hsiang Cheng and Guo-En Chang |
Sensors 2023, 23, 7531 2023.
|
| 2023-05 |
期刊論文
|
Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors |
Kuo-Chih Lee, Yu-Hsien Chuang, Chen-Kai Huang, Hui Li, Guo-En Chang, Kuan-Ming Hung and Hung Hsiang Cheng |
Photonics
|
| 2023-03 |
期刊論文
|
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics |
Radhika Bansal, Yue-Tong Jheng, Kuo-Chih Lee, H. H. Cheng, and Guo-En Chang |
IEEE ELECTRON DEVICE LETTERS, VOL. 44, NO. 3, MARCH (2023).
|
| 2023-03 |
期刊論文
|
Transfer-Printing-Enabled GeSn Flexible Resonant-Cavity-Enhanced Photodetectors with Strain-Amplified Mid-Infrared Optical Responses |
Yeh-Chen Tai, Shu An, Po-Rei Huang, Yue-Tong Jheng, Kuo-Chih Lee, Hung-Hsiang Cheng, Munho Kim and Guo-En Chang |
Nanoscale
|
| 2023-01 |
期刊論文
|
Time-Resolved Photoluminescence in GeSn Film by New Infrared Streak Camera Attachment Based on a Broadband Light Upconversion |
Patrik Ščajev, Saulius Miasojedovas, Algirdas Mekys, Pavels Onufrijevs and Hung-Hsiang Cheng |
Coating
|
| 2022-05 |
期刊論文
|
Design and Optimization of GeSnWaveguide Photodetectors
for 2-m Band Silicon Photonics |
Soumava Ghosh, Radhika Bansal, Greg Sun, Richard A. Soref, Hung-Hsiang Cheng and Guo-En Chang |
sensors
|
| 2022-04 |
期刊論文
|
Achievable Performance of Uncooled Homojunction GeSn Mid-infrared Photodetectors |
Guo-En Chang, Shui-Qing Yu, Jifeng Liu, Hung-Hsiang Cheng, Richard A. Soref, and Greg Sun |
IEEE Journal of Selected Topics in Quantum Electronics
|
| 2022-01 |
期刊論文
|
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density |
Chiao Chang, Hung-Hsiang Cheng, Gary A. Sevison, Joshua R. Hendrickson, Zairui Li, Imad Agha, Jay Mathews, Richard A. Soref and Greg Sun |
Materials
|
| 2021-12 |
期刊論文
|
Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes |
Gang Wu, Hee-Suk Chung, Tae-Sung Bae, Jiung Cho, Kuo-Chih Lee, Hung Hsiang Cheng, Cormac Ó Coileáin, Kuan-Ming Hung, Ching-Ray Chang, and Han-Chun Wu |
ACS Appl. Mater. Interfaces
|
| 2021-07 |
期刊論文
|
Extension of spectral sensitivity of GeSn IR photodiode after laser annealing |
Patrik Ščajev, Pavels Onufrijevs, Algirdas Mekys, Tadas Malinauskas, Dominykas Augulis, Liudvikas Subačius, Kuo-Chih Lee, Jevgenijs Kaupuzs, Sarunas Varnagiris, Arturs Medvids, Hung Hsiang Cheng |
Applied Surface Science 555 (2021) 149711
|
| 2021-07 |
期刊論文
|
Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics |
Chen-Yang Chang, Radhika Bansal, Kuo-Chih Lee, Greg Sun, Richard Soref, H. H. Cheng, and Guo-En Chang |
Optics Letters
|
| 2021-04 |
期刊論文
|
Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications |
Yun-Da Hsieh, Jun-Han Lin, Richard Soref, Greg Sun, Hung-Hsiang Cheng, and Guo-En Chang |
Communications Materials
|
| 2021-02 |
期刊論文
|
GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics |
Cheng-Hsun Tsai, Kuan-Chih Lin, Chin-Yuan Cheng, Kuo-Chih Lee, H. H. Cheng, and Guo-En Chang |
Optics Letters
|
| 2020-12 |
期刊論文
|
Electrical contact barriers between 3D metal and layered SnS2 |
Lv, Chengzhai; Yan, Wen-Jie; Shieh, Tung-Ho; Zhao, Yue; Wu, Gang; zhao, Yanfeng; Lv, Yanhui; Zhang, Duan, Chen, Yanhui, Arora, Sunil, Coileáin Cormac, Chang Ching-Ray, Cheng Hung Hsiang*, Hung, K.–M, Wu. Han-Chun |
ACS Appl. Mater. Interfaces
|
| 2020-10 |
期刊論文
|
Amplifying photocurrent of graphene on GeSn film by sandwiching a thin oxide between them |
Yanhui Lv, Hui Li, Kuo-Chih Lee, Guo-En Chang, Tung-Ho Shieh, Xiao-Shan Wu, Ching-Ray Chang, Han-Chun Wu, Kuan-Ming. Hung, and Hung-Hsiang Cheng |
Appl. Phys. Lett.
|
| 2020-10 |
期刊論文
|
Photoelectrical properties of Graphene/ doped GeSn vertical heterostructures |
Yanhui Lv, Hui Li, Cormac Ó Coileáin, Duan Zhang, Chenglin Heng, Ching-Ray Chang, K. -M. Hung, Huang Hsiang Cheng＊ and Han-Chun Wu |
RSC Advances
|
| 2020-09 |
期刊論文
|
Temperature dependent carrier lifetime, diffusion coefficient and diffusion length in Ge0.95Sn0.05 epilayer |
Patrik Ščajev, Vaiva Soriūtė, Gediminas Kreiza, Tadas Malinauskas, Sandra Stanionytė, Pavels Onufrijevs, Arturs Medvids, Hung-Hsiang Cheng |
Journal of Applied Physics
|
| 2020-08 |
期刊論文
|
Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications |
Tai, Yeh-Chen; Yeh, Po-Lun ; An, Shu; Cheng, Henry; Kim, Munho; Chang, Guo-En |
Nanotechnology
|
| 2020-07 |
期刊論文
|
Planar GeSn photodiode for high-detectivity photodetection at 1550 nm |
Kuo-Chih Lee, Min-Xiang Lin, Hui Li, Hung-Hsiang Cheng, Greg Sun, Richard Soref, Joshua R. Hendrickson, Kuan-Ming Hung, Patrik Scajev, and Arthur Medvids |
Appl. Phys. Lett.
|
| 2020-06 |
期刊論文
|
Photoelectrical properties of Graphene/ doped GeSn vertical heterostructures |
Yanhui Lv, Hui Li, Cormac Ó Coileáin, Duan Zhang, Chenglin Heng, Ching-Ray Chang, K. -M. Hung, Huang Hsiang Cheng and Han-Chun Wu |
RSC Advances
|
| 2020-03 |
期刊論文
|
Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge |
Pavels Onufrijevs, PatrikŠčajev, Arturs Medvids, Mindaugas Andrulevicius, Saulius NargelasTadas, Malinauskas Sandra, Stanionytė Martynas, Skapas, Liga Grase, Arturs Pludons, Michael Oehme, Klara Lyutovich, Erich Kasper, Joerg Schulze, Hung Hsiang Cheng |
Optic and laser technologies, 128 (2020) 106200
|
| 2020-03 |
期刊論文
|
Electrical Contact Barriers between a Three-Dimensional Metal and 2 Layered SnS2 |
Chengzhai Lv, Wenjie Yan, Tung-Ho Shieh,Yue Zhao, Gang Wu, Yanfeng Zhao, Yanhui Lv, Duan Zhang, Sunil K. Arora, Cormac Ó Coileáin, Ching-Ray Chang, H. H. Cheng, K. -M. Hung, and Han-Chun Wu |
ACS Applied Materials & Interfaces
|
| 2020-03 |
期刊論文
|
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base |
Wei-Ting Hung, Devesh Barshilia, Rikmantra Basu, H. H. Cheng, and Guo-En Chang |
Optics Letters
|
| 2020-01 |
期刊論文
|
GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band |
Cheng-Hsun Tsai, Bo-Jun Huang, Richard A. Soref, Greg Sun, H. H. Cheng, and Guo-En Chang, |
Optics Letters
|
| 2019-06 |
期刊論文
|
Electrically-injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms |
B. J. Huang, Y. D. Hsieh, G. Sun, R. Soref, H. H. Cheng, and G. E. Chang |
ACS Photonics
|
| 2017- |
期刊論文
|
Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn |
Li. Sian. Jheng, Hui. Li, Chiao. Chang, Hung. Hsiang. Cheng, and Liang. Chen. Li |
AIP ADVANCES 7, 095324 (2017).
|
| 2017- |
期刊論文
|
Room-temperature 2-m GeSn P-I-N homojunction light-emitting diode for inplane coupling to group-IV waveguides |
Chiao Chang, Tai-Wei Chang, Hui Li, Hung Hsiang Cheng, Richard Soref, Greg Sun, and Joshua R. Hendrickson |
Appl. Phys. Lett. 111, 141105 (2017).
|
| 2017- |
期刊論文
|
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer |
YU-HUI HUANG, GUO-EN CHANG1, HUI LI, AND H. H. CHENG |
Optics Letters Vol 42. No. 9, 1652-1655
|
| 2017- |
期刊論文
|
Spectroscopic ellipsometry and X-ray diffraction studies on Si1-xGex/Si epifilms and superlattices |
Deng Xiea, Zhi. Ren Qiub, Lingyu Wan, Devki N. Talwar, Hung-Hsiang Cheng, Shiyuan Liu, Ting Mei, Zhe Chuan Feng |
Applied Surface Science
|
| 2017- |
期刊論文
|
X-ray Diffraction Simulation of GeSn/Ge Multi-quantum Wells with Kinematic Approach |
Hui Li, Chiao Chang, and Hung Hsiang Cheng |
Journal of Crystal Growth 468 (2017) 272–274
|
| 2016-12 |
期刊論文
|
Ge0.975Sn0.025 320 × 256 imager chip for 1.6–1.9 μm infrared vision |
CHIAO CHANG, HUI LI, CHIEN-TE KU, SHIH-GUO YANG, HUNG HSIANG CHENG,* JOSHUA HENDRICKSON, RICHARD A. SOREF, AND GREG SUN |
Applied Optics
|
| 2016-05 |
期刊論文
|
Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy |
H. Li, C. Chang, H. H. Cheng, G. Sun, and R. A. Soref |
Appl. Phys. Lett.
|
| 2016-04 |
期刊論文
|
Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination |
C. Chang, H. Li, S. H. Huang, H. H. Cheng, G. Sun, and R. A. Soref |
Appl. Phys. Lett.
|
| 2016-03 |
期刊論文
|
Temperature-dependent electroluminescence from GeSn heterojunction
light-emitting diode on Si substrate |
C. Chang, H. Li, S. -H. Huang, L. -C. Lin, and H. -H. Cheng |
Jpn. J. Appl. Phys
|
| 2016-01 |
期刊論文
|
Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias |
Li Hui, Chen Tsung Pin, Chang Chiao, Cheng Hung Hsiang, Chang Guo En, Hung Guan Ming |
Applied Physics Letter
|
| 2015-09 |
期刊論文
|
The strain dependence of Ge1−xSnx (x = 0.083) Raman shift |
Chiao Chang, Hui Li, Tsung-Pin Chen, Wei-Kai Tseng, Henry Cheng, Chung-Ting Ko, Chung-Yen Hsieh, Miin-Jang Chen, Greg Sun |
Thin Solid Film
|
| 2014-12 |
期刊論文
|
GeSn p-i-n waveguide photodetectors on silicon substrates |
Yu-Hsiang Peng, H. H. Cheng, Vladimir I. Mashanov and Guo-En Chang |
Applied Physics Letter
|
| 2014-10 |
期刊論文
|
Characteristics of Sn segregation in Ge/GeSn heterostructures |
H. Li, C. Zhang, T. P. Chen, and H. H. Cheng |
Applied Physics Letter
|
| 2014-07 |
期刊論文
|
Substitutional Incorporation of Sn in Compressively Strained Thin Films of Heavily-Alloyed Ge1-xSnx/Ge Semiconductor Probed by X-ray Absorption and Diffraction Methods |
Soo, Yun-Liang; Wu, Tai-Sing; Chen, Y. C.; Shiu, Y. F.; Peng, H. J.; Tsai, Y. W.; Liao, P.Y.; Zheng, Y. Z.; Chang, Shih-Lin; Chan, Ting; Lee, Jyh; Sterbinsky, George; Li, Hui; Cheng, Henry |
Semiconductor Science and Technology
|
| 2014-06 |
期刊論文
|
Electrical characteristics of Ni Ohmic contact on n-type GeSn |
H. Li, H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, and Y. W. Suen |
Applied Physics Letters
|
| 2014-05 |
期刊論文
|
Structural and optical characteristics of Ge1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers |
Jia-Zhi Chen, H. Li, H. H. Cheng, and Guo-En Chang |
Optical Materials Express
|
| 2014-04 |
期刊論文
|
Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth |
A.I. Nikiforov, V.I. Mashanov, V.A. Timofeev, O.P. Pchelyakov, H. H. Cheng |
Thin Solid Films
|
| 2013-12 |
期刊論文
|
GeSn-based p-i-n photodiodes with strained active layer on a Si wafer |
H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun |
Applied Physics Letters
|
| 2013-09 |
期刊論文
|
Quantum-confined photoluminescence from Ge1−xSnx/Ge superlattices on Ge-buffered Si(001) substrates |
Guo-En Chang, Wen-Yao Hsieh, Jia-Zhi Chen, and H. H. Cheng |
Optics Letters
|
| 2013-06 |
期刊論文
|
Sn-based group IV structure for resonant tunneling diode |
K. Y. Wu, B. H. Tsai, J. Z. Chen, H. H. Cheng, Guo-En Chang, V. I. Mashanov, G. Sun, R. A. Soref |
IEEE ELECTRON DEVICE LETTERS
|
| 2013-06 |
期刊論文
|
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment |
H. Li, Y. X. Cui, K. Y. Wu, W. K. Tseng, H. H. Cheng, and H. Chen |
Applied Physics Letters
|
| 2013-05 |
期刊論文
|
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate |
H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun and R. A. Soref |
Applied Physics Letters
|
| 2013-04 |
期刊論文
|
Theoretical analysis of n-type Si-based resonant tunneling diodes deposited on either partially or fully relaxed SiGe buffer layers |
K. Y. Wu, H. H. Cheng, K. M. Hung, and G. Sun |
IEEE Transactions on Electron Devices
|
| 2013-03 |
期刊論文
|
A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film |
G. Y. Zhang, H. R. Zheng, W. H. Huang, X. Y. Zhang, D. L. Gao, H. Zhang, P. X. Zhang, T. Y. Tseng, H. U. Habermeier, C. T. Lin, and H. H. Cheng |
Applied Physics A
|
| 2013-01 |
期刊論文
|
Optical gain of germanium infrared lasers on different crystal orientations |
Guo-En Chang and Henry H Cheng |
Journal of Physics D-applied Physics
|
| 2012-06 |
期刊論文
|
Franz-Keldysh Electro-Absorption Modulation in Germanium-Tin Alloys |
R. A. Soref and G. Sun, and H. H. Cheng |
Journal of Applied Physics
|
| 2012-05 |
期刊論文
|
Transformation of a two-dimensional to one-dimensional energy profile on a spatially deformed Si0.82Ge0.18/Si0.51Ge0.49 wrinkled heterostructure |
Guo-En Chang, H. H. Cheng, G. Sun, and R. A. Soref |
Journal of Applied Physics
|
| 2012-02 |
期刊論文
|
Strain analysis of a wrinkled SiGe bilayer thin film |
Guo-En Chang, Chia-Ou Chang, and H. H. Cheng |
Journal of Applied Physics
|
| 2011-10 |
期刊論文
|
Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature |
I. S. Yu, T. H. Wu, K. Y. Wu, H. H. Cheng*, V. I. Mashanov, A. I. Nikiforov, O. P. Pchelyakov, and X. S. Wu |
AIP Advances
|
| 2011-01 |
期刊論文
|
Formation of Ge-Sn nanodots on Si(100) surfaces
by molecular beam epitaxy |
Vladimir Mashanov*, Vladimir Ulyanov, Vyacheslav Timofeev, Aleksandr Nikiforov, Oleg Pchelyakov,
Ing-Song Yu, Henry Cheng |
Nanoscale Research Letters
|
| 2010-12 |
期刊論文
|
Strain relaxation in SiGe virtual substrate characterized by high resolution X-ray diffraction |
W. S. Tan, H. L. Cai, X. S. Wu, K. M. Deng, H. H. Cheng |
International Journal of Modern Physics B
|
| 2010-09 |
期刊論文
|
Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode |
G. Sun*, R. A. Soref, and H. H. Cheng |
Optical Express
|
| 2010-08 |
期刊論文
|
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure mid-infrared laser |
H. H. Cheng*, G. Sun, R. A. Soref, and |
Journal of Applied Physics
|
| 2010-08 |
期刊論文
|
Local intermixing on Ge/Si heterostructures at low temperature growth |
H. H. Cheng*, W. P. Huang, V.I. Mashanov, and G. Sun |
Journal of Applied Physics
|
| 2010-06 |
期刊論文
|
Temperature-dependent Rabi rotation in semiconductor quantum dots |
K.-M. Hung, W.-J. Hong, K.-J. Su, T.-H. Shieh, K.-Y. Wu, and H. H. Cheng |
Applied Physics Letters
|
| 2010-05 |
期刊論文
|
Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well |
K. M. Hung, J. -Y. Kuo, H. H. Cheng* |
Applied Physics Letters
|
| 2010-03 |
期刊論文
|
Radiation emission from wrinkled SiGe/SiGe nanostructure |
A. I. Fedorchenko, H. H. Cheng*, G. Sun, and R. A. Soref |
Applied Physics Letters
|
| 2009-04 |
期刊論文
|
Thickness dependence of nanofilm elastic modulus |
Alexander I. Fedorchenko,a An-Bang Wang, and Henry H. Cheng |
Applied Physics Letters
|
| 2008-09 |
期刊論文
|
Electron tunneling in a strained n-type Si1-xGex/Si/Si1-xGex double-barrier structure |
鄭鴻祥* |
Applied Physics Letters
|
| 2008-07 |
期刊論文
|
Probing landau quantization with the presence of insulator-quantum Hall transition in a GaAs two dimensional electron gas system |
鄭鴻祥 |
J. Phys.: Condens. Matter
|
| 2008--- |
期刊論文
|
Type-I / Type-II exciton in strained Si/SiGe multi-QWs. |
鄭鴻祥 |
Physica E
|
| 2007-10 |
期刊論文
|
The characteristic of strain relaxation on SiGe virtual substrate with thermal annealing |
鄭鴻祥* |
Applied Physics Letters
|
| 2007-08 |
期刊論文
|
Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
鄭鴻祥 |
Applied Physics Letters
|
| 2007-08 |
期刊論文
|
Strain on wrinkled bilayer thin film |
鄭鴻祥 |
Virtual Journal of Nanoscale Science & Technology
|
| 2007-07 |
期刊論文
|
Strain on wrinkled bilayer thin film |
鄭鴻祥 |
Applied Physics Letters
|
| 2007-06 |
期刊論文
|
Strain Free Ge/GeSiSn Qunatum cascade laser based on L-valley intersubband transitions |
鄭鴻祥 |
Applied Physics Letters
|
| 2006-08 |
期刊論文
|
Strain-induced wrinkling on SiGe free standing film |
鄭鴻祥 |
Virtual Journal of Nanoscale Science & Technology
|
| 2006-07 |
期刊論文
|
Strain-induced wrinkling on SiGe free standing film |
鄭鴻祥 |
Applied Physics Letters
|
| 2006-04 |
期刊論文
|
Strain modulation of SiGe virtual substrate |
鄭鴻祥 |
Applied Physics Letters
|
| 2005-09 |
期刊論文
|
Raman study of Si-Ge intermixing in Ge quantum rings and dots |
V.I. Mashanov, H.-H. Cheng, C.-T. Chia, Y.-H. Chang |
Physica E
|
| 2005-09 |
期刊論文
|
Smoothing of Si0.7Ge0.3 virtual substrates by gas-cluster-ion beam |
H. Chen, F. Chen, X. M. Wang, X. K. Yu, J. R. Liu, K. B. Ma, W. K. Chu. H. H. Cheng I. S. Yu, Y. T. |
Applied Physics Letters
|
| 2005-09 |
期刊論文
|
Wrinkling of a debonded initially compressed SiGe film |
鄭鴻祥 |
Journal of Mechanics
|
| 2004-01 |
期刊論文
|
Grazing incidence X-ray scattering from Ge/Si superlattices grown at low temperature |
X. S. Wu, T. P. A. Hase, B. K. Tanner, and H. H. Cheng |
Surface Science
|
| 2003-04 |
期刊論文
|
On the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effect |
C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, S. Y. Wang, D. H. Yeh, H. T. Chou, C. P. Lee, and |
Solid State Communication
|
| 2003-01 |
期刊論文
|
Raman spectroscopy of self-assembled Ge islands on Si |
T. R. Yang, M. M. Dvoynenko, Z. C. Feng, and H. H. Cheng |
European Physical Journal B
|
| 2002-12 |
期刊論文
|
Effect of low-temperature Si buffer layer on SiGe growth deposited bu molecular beam epitaxy |
S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng |
Journal of Applied Physics
|
| 2002-07 |
期刊論文
|
Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer |
W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, and H. H. Cheng |
Applied Physics Letters
|
| 2002-01 |
期刊論文
|
Insulator to quantum Hall conductor at low magnetic fields |
C. F. Huang, Y. H. Chang, C. H. Lee, H. T. Chou, H. D. Yeh, C. T. Liang, Y. F. Chen, H. H. Cheng, G. |
Physical Review B
|
| 2001-08 |
期刊論文
|
Mechanism of THz lasing in SiGe/Si quantum wells |
A. Blom, M. A. Odnoblyudov, H. H. Cheng, K. A. Chao |
Applied Physics Letters
|
| 2001-06 |
期刊論文
|
Inverted Hut Structure of Si-Ge Nanocrystals Studied by EXAFS method |
Y. L. Soo, G. Kioseoglou, S. Huamg, S. Kim, Y. H. Kao, and H. H. Cheng |
Applied Physics Letters
|
| 2000-08 |
期刊論文
|
Band alignment and excitons in SiGe/Si multi-quantum wells |
H. H. Cheng, S. T. Yen, and R. J. Nicholas |
Physical Review B
|
主要學歷