研究人才詳細資料
技術移轉
| 出版年月 | 著作類別 | 著作名稱 | 作者 | 收錄出處 |
|---|---|---|---|---|
| 2022-09 | 期刊論文 | Induced transition from Schottky-to-ohmic contact in In/n-type Si owing to (NH4)2Sx treatment | 林修宇,張興政,黃柏霖,林祐仲* | Indian Journal of Physics |
| 2022-03 | 期刊論文 | Interaction of defects with solar irradiation for devices used ZnO/Ga2O3 heterojunctions in which Ga2O3 prepared using oxidation of the heavily doped p-type GaAs | 林祐仲*,林孟勳,黃靖軒,張興政 | Chinese Journal of Physics |
| 2022-02 | 期刊論文 | Effects of the addition of graphene on the defect-related photoluminescent and electrical properties of n-type ZnO thin films | 林祐仲*,黃靖軒,張興政,C.Y. Chuang,林孟勳 | Journal of Luminescence |
| 2022-01 | 期刊論文 | A source of free holes in NiO thin films with different nickel content that are prepared using the sol-gel method | 林祐仲*,蘇庭鋐,郭柏志,張興政 | Materials Chemistry and Physics |
| 2021-12 | 期刊論文 | Electrical characteristics and reliability of SiCN/porous SiOCH stacked dielectric: effects of deposition temperature of SiCN film | Y.L. Cheng*, Y.L. Lin, W.F. Peng, C.Y. Lee, 林祐仲 | ECS Journal of Solid State Science and Technology |
| 2021-09 | 期刊論文 | Electrical and ferromagnetic properties of p-type ZnO thin films with and without the addition of graphene prepared by the sol-gel method | 林祐仲*,張興政,C.Y. Chuang,呂秉恩,黃靖軒 | Journal of Alloys and Compounds |
| 2021-07 | 期刊論文 | Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate) | 蘇庭鋐,陳閔揚,黃瑋萱,林祐仲* | Indian Journal of Physics |
| 2021-05 | 期刊論文 | Incorporation of polyvinyl alcohol into ZrO2 to modulate the hysteresis-type current-voltage characteristics of Au/ZrO2/heavily doped p-type Si devices | 余振富,林祐仲*,林孟勳,張興政 | Indian Journal of Physics |
| 2020-08 | 期刊論文 | Effects of graphene content on resistive switching for Au/poly(methyl methacrylate):reduced graphene oxide/heavily doped p-type Si devices | 林祐仲*,吳長霖,柯尊元,張興政 | Indian Journal of Physics |
| 2020-06 | 期刊論文 | Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors | 林祐仲*,吳長霖,江家宏,郭柏志 | Indian Journal of Physics |
| 2020-03 | 期刊論文 | Optical properties of and defects in ZnO nanorods that are modified by treatment with H2O2 and used as conductive filaments for poly(methyl methacrylate)-based resistive switching applications | 嚴年豪,林祐仲*,蘇庭鋐,張興政 | Bulletin of Materials Science |
| 2020-01 | 期刊論文 | Electrochemical properties and trap states of TiO2 nanoparticles modified by doping with graphene and used as counter electrodes for dye-sensitized solar cell applications | 林祐仲*,吳長霖,張興政 | Indian Journal of Physics |
| 2019-10 | 期刊論文 | Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications | 林祐仲*,洪承群,黃靖軒,林聖育 | Chinese Journal of Physics |
| 2019-10 | 期刊論文 | Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices | 林祐仲*,吳承祐,張興政 | Chinese Journal of Physics |
| 2018-12 | 期刊論文 | Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance | 吳長霖,林祐仲* | Indian Journal of Physics |
| 2018-04 | 期刊論文 | Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol-gel grown MoS2/Si nanowire/Si devices | 吳承祐,林祐仲*,張興政,陳雅惠 | Journal of Materials Science: Materials in Electronics |
| 2018-02 | 期刊論文 | Responsivity to solar irradiation and the response time of photodetectors that use ZnO nanoparticles with and without thermal annealing in pure oxygen ambient | 林祐仲*,張琪閔,張興政,陳雅惠 | Optik—International Journal for Light and Electron Optics |
| 2018-02 | 期刊論文 | Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment | 林祐仲*,洪承群 | Applied Physics A |
| 2018-02 | 期刊論文 | Temperature-dependent hole transport for pentacene thin-film transistor with a SiO2 gate dielectric modified by (NH4)2Sx treatment | 林祐仲*,洪承群 | Microelectronics Reliability |
| 2018-01 | 期刊論文 | Behavior of carrier transports and responsivity to solar irradiation for poly(3-hexylthiophene)/silicon devices with and without the insertion of silicon nanowires and the addition of black phosphorus | 林祐仲*,林鴻志,張興政,陳雅惠 | Thin Solid Films |
| 2018-01 | 期刊論文 | Controlled growth of MoS2 nanopetals on the silicon nanowire array using the chemical vapor deposition method | 陳上民,林祐仲* | Journal of Crystal Growth |
| 2018-01 | 期刊論文 | Effects of (NH4)2Sx treatment on the surface properties of SiO2 as a gate dielectric for pentacene thin-film transistor applications | 洪承群,林祐仲* | Materials Research Express |
| 2018-01 | 期刊論文 | Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices | 林祐仲*,張琪閔,吳長霖 | Journal of Materials Science: Materials in Electronics |
| 2018-01 | 期刊論文 | Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without ( NH4)2Sx treatment by chemical vapor deposition | 蘇庭鋐,吳長霖,張興政,林祐仲* | Journal of Materials Science: Materials in Electronics |
| 2018-01 | 期刊論文 | Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications | 洪承群,林祐仲* | Chemical Physics Letters |
| 2017-12 | 期刊論文 | Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices | 吳承祐,林祐仲* | Journal of Materials Science: Materials in Electronics |
| 2017-11 | 期刊論文 | Temperature dependence of current-voltage characteristics of MoS2/Si devices prepared by the chemical vapor deposition method | 蘇庭鋐,江家宏,林祐仲* | Microelectronics Reliability |
| 2017-10 | 期刊論文 | Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS2 that is directly deposited on Si using the chemical vapor method | 林祐仲*,蘇庭鋐,陳上民 | Journal of Materials Science: Materials in Electronics |
| 2017-10 | 期刊論文 | Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination | 林祐仲*,柯尊元 | Journal of Materials Science: Materials in Electronics |
| 2017-08 | 期刊論文 | Solar-irradiation photodetectors based on ZnO nanoparticles with gold and indium electrodes | 林祐仲*,陳耀銘,張興政,陳雅惠 | Optik—International Journal for Light and Electron Optics |
| 2017-07 | 期刊論文 | Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles | 林祐仲*,陳耀銘 | Journal of Materials Science: Materials in Electronics |
| 2017-07 | 期刊論文 | SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method | 林祐仲*,蘇庭鋐 | Journal of Materials Science: Materials in Electronics |
| 2017-06 | 期刊論文 | Responsivity of In/ZnO nanoparticles/In and In/Ti0.05Zn0.95O nanoparticles/In devices to solar irradiation | 林祐仲* | Sensors and Actuators A: Physical |
| 2017-03 | 期刊論文 | Effects of surface modification of MoS2:TiO2:Pt counter electrodes by argon plasma treatment on photovoltaic performance of dye-sensitized solar cells | 柯尊元,洪浩哲,林祐仲* | Journal of Materials Science: Materials in Electronics |
| 2017-01 | 期刊論文 | Dependence of carrier transport of [6,6]-phenyl C61-butyric acid methyl ester/p-type Si diodes upon incorporation of ZnO nanoparticles | 林祐仲*,金益民,張興政 | ECS Journal of Solid State Science and Technology |
| 2017-01 | 期刊論文 | Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOx thin films | 林祐仲*,朱宥儒 | Journal of Alloys and Compounds |
| 2016-12 | 期刊論文 | Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester:Black phosphorus/p-type Si device | 林祐仲*,林鴻志,湯志輝,張興政 | Microelectronic Engineering |
| 2016-11 | 期刊論文 | Changing electrical properties of PEDOT:PSS by incorporating with dimethyl sulfoxide | 林祐仲*,李哲佑,陳上民 | Chemical Physics Letters |
| 2016-11 | 期刊論文 | Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances | 林祐仲*,林鴻志,嚴年豪,湯志輝,張興政 | Applied Physics A |
| 2016-11 | 期刊論文 | Interface modification of MoS2/SiO2 leading to conversion of conduction type of MoS2 | 林祐仲*,蘇庭鋐 | Applied Surface Science |
| 2016-10 | 期刊論文 | Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices | 林鴻志,林祐仲* | Microelectronics Reliability |
| 2016-10 | 期刊論文 | Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances | 林鴻志,林祐仲* | Synthetic Metals |
| 2016-08 | 期刊論文 | Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices | 林祐仲*,朱宥儒 | Microelectronics Reliability |
| 2016-06 | 期刊論文 | 聚(3-己烷基噻吩):碳六十衍生物/透明導電氧化物薄膜之界面歐姆接觸特性研究 | 林祐仲*,林鴻志,金益民 |
真空科技 Journal of Taiwan Vacuum Society |
| 2016-05 | 期刊論文 | Interface modification of MoS2:TiO2 counter electrode/electrolyte in dye-sensitized solar cells by doping with different Co contents | 林祐仲*,洪浩哲,柯尊元 | Journal of Materials Science: Materials in Electronics |
| 2016-04 | 期刊論文 | Effects of sulfide treatment on the electrical, photoluminescent and structural properties of ZnS films | 林祐仲*,倪維仕 | Journal of Luminescence |
| 2016-03 | 期刊論文 | Point defect-induced magnetic properties in CuAlO2 films without magnetic impurities | 羅傑,林祐仲* | Applied Physics A |
| 2016-02 | 期刊論文 | Effect of incorporation of black phosphorus into PEDOT:PSS on conductivity and electron-phonon coupling | 李哲佑,林祐仲* | Synthetic Metals |
| 2016-02 | 期刊論文 | Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene | 林祐仲*,洪承群,曾建洲,張興政 | Applied Physics A |
| 2016-01 | 期刊論文 | Ambient-atmosphere annealing effect on the carrier conduction behavior based on the linear-regime transfer characteristics of pentacene thin film transistors | 林祐仲*,曹侯焱 | Microelectronic Engineering |
| 2016-01 | 期刊論文 | Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS2 | 蘇庭鋐,林祐仲* | Applied Physics Letters |
| 2015-12 | 期刊論文 | Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes | 林祐仲* | Superlattices and Microstructures |
| 2015-12 | 期刊論文 | Erratum: “Effect of incorporation of ethylene glycol into PEDOT:PSS on electron phonon coupling and conductivity” [J. Appl. Phys. 117, 215501 (2015)] | 林祐仲*,倪維仕,李哲佑 | Journal of Applied Physics |
| 2015-12 | 期刊論文 | Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions | 倪維仕,林祐仲*,張興政,劉嘉吉,陳亮儒 | Journal of Luminescence |
| 2015-11 | 期刊論文 | Defect-induced magnetic properties of Cu-doped ZnS films with different copper contents | 倪維仕,林祐仲* | Journal of Alloys and Compounds |
| 2015-10 | 期刊論文 | Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes | 林祐仲*,阮丞禾,朱宥儒,劉嘉吉,林飛宏 | Applied Physics A |
| 2015-10 | 期刊論文 | Photoluminescent, morphological and electrical properties of ZrO2 and ZrO2:polyvinyl alcohol composite thin films | 林祐仲*,余振富 | Journal of Non-Crystalline Solids |
| 2015-08 | 期刊論文 | Interface modification of MoS2 counter electrode/electrolyte in dye-sensitized solar cells by incorporating TiO2 nanoparticles | 張文豪,林祐仲* | Current Applied Physics |
| 2015-07 | 期刊論文 | Cadmium content-dependent photoluminescent properties and band offsets of Zn1-xCdxO films | 林建煌,林祐仲* | Journal of Materials Science: Materials in Electronics |
| 2015-07 | 期刊論文 | Defect-dependent carrier transport behavior of polymer:ZnO composites/electrodeposited CdS/indium tin oxide devices | 林祐仲*,游長峯 | Journal of Applied Physics |
| 2015-06 | 期刊論文 | Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents | 倪維仕,林祐仲* | Applied Physics A |
| 2015-06 | 期刊論文 | Effect of incorporation of ethylene glycol into PEDOT:PSS on electron phonon coupling and conductivity | 林祐仲*,倪維仕,李哲佑 | Journal of Applied Physics |
| 2015-06 | 期刊論文 | Overpotential modification at the MoS2 counter electrode/electrolyte interfaces by thermal annealing resulting improvement in photovoltaic performance of dye-sensitized solar cells | 張文豪,林祐仲* | Journal of Materials Science: Materials in Electronics |
| 2015-05 | 期刊論文 | Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy | 蔡佳龍,林祐仲*,林建煌 | Journal of Materials Science: Materials in Electronics |
| 2015-04 | 期刊論文 | Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films | 林祐仲*,曹侯焱,劉代山 | Journal of Materials Science: Materials in Electronics |
| 2015-04 | 期刊論文 | Environmental effects on temperature-dependent carrier transports in poly(3-hexylthiophene) films | 林祐仲*,金益民,張興政 | Applied Physics A |
| 2015-04 | 期刊論文 | Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes | 阮丞禾,林祐仲*,陳雅惠,張興政 | Materials Science in Semiconductor Processing |
| 2015-03 | 期刊論文 | Interface modification and trap-type transformation in Al-doped CdO/Si-nanowire arrays/p-type Si devices by nanowire surface passivation | 林祐仲*,卓偉民,張興政,陳雅惠 | Current Applied Physics |
| 2015-03 | 期刊論文 | Tuning charge transport in pentacene thin film transistors using the strain-induced electron-phonon coupling modification | 林祐仲*,張興政,劉代山 | Applied Physics A |
| 2015-02 | 期刊論文 | Effects of sulfide treatment on the photoluminescent and structural properties of electrodeposited CdS films | 林祐仲*,游長峯,張興政,劉嘉吉,吳啟安 | Journal of Luminescence |
| 2015-01 | 期刊論文 | Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment | 林祐仲*,曾建洲,張興政 | Applied Physics A |
| 2015-01 | 期刊論文 | Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation | 林建煌,林祐仲*,張興政 | Applied Physics A |
| 2014-12 | 期刊論文 | Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe | 林祐仲*,曾建洲 | Applied Surface Science |
| 2014-11 | 期刊論文 | Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices | 林祐仲*,金益民 | Journal of Applied Physics |
| 2014-11 | 期刊論文 | Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films | 林祐仲*,曹侯焱,劉代山 | Materials Chemistry and Physics |
| 2014-10 | 期刊論文 | Temperature-dependent gate-swing hysteresis of pentacene thin film transistors | 林祐仲*,林昱成 | AIP Advances |
| 2014-09 | 期刊論文 | Electron-phonon coupling modification and carrier mobility enhancement in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by ultraviolet irradiation | 林祐仲*,金益民,吳承祐,劉代山 | Journal of Applied Physics |
| 2014-08 | 期刊論文 | Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment | 曾建洲,林祐仲* | Applied Physics A |
| 2014-07 | 期刊論文 | Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si | 林祐仲*,楊士弘 | Applied Physics A |
| 2014-07 | 期刊論文 | Electrical conduction mechanisms in the transfer characteristics of pentacene thin film transistors | 林祐仲*,林昱成 | Applied Physics Letters |
| 2014-06 | 期刊論文 | Annealing effect on Schottky barrier inhomogeneity ofgraphene/n-type Si Schottky diodes | 林祐仲*,林建煌 | Applied Surface Science |
| 2014-06 | 期刊論文 | Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers | 曾建洲,林祐仲* | Applied Physics Letters |
| 2014-05 | 期刊論文 | Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes | 金益民,林祐仲* | Materials Chemistry and Physics |
| 2014-05 | 期刊論文 | Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes | 曾建洲,林祐仲* | Materials Chemistry and Physics |
| 2014-04 | 期刊論文 | Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices | 蘇庭鋐,林祐仲* | Applied Physics Letters |
| 2014-04 | 期刊論文 | Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes | 曾建洲,林祐仲* | Applied Physics Letters |
| 2014-02 | 期刊論文 | Dependences of the structural, compositional and photoluminescent properties of electrodeposited CdS films upon thermal annealing | 游長峯,林祐仲*,劉嘉吉,吳啟安 | Journal of Luminescence |
| 2014-02 | 期刊論文 | Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications | 曹侯焱,林祐仲* | Applied Physics Letters |
| 2014-01 | 期刊論文 | Dependence of photocurrent of poly(3-hexylthiophene)/n-type Si diodes upon incorporation of ZnO nanoparticles | 林祐仲*,金益民,曹侯焱 | Thin Solid Films |
| 2014-01 | 期刊論文 | Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios | 阮丞禾,黃崇政,林祐仲*,何冠儒,張興政,陳雅惠 | Thin Solid Films |
| 2014-01 | 期刊論文 | Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol-gel and thermally grown methods | 戴其杰,曹侯焱,林祐仲*,劉代山 | Thin Solid Films |
| 2014-01 | 期刊論文 | Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatme | 林建煌,曾建洲,林祐仲* | Thin Solid Films |
| 2014-01 | 期刊論文 | Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O2/N2 | 卓偉民,林祐仲*,劉嘉吉,陳亮儒,石豫臺,陳品睿 | Journal of Luminescence |
| 2013-12 | 期刊論文 | Enhancement of carrier mobility in poly(3-hexylthiophene) by incorporating ZnO nanoparticles | 金益民,林祐仲*,劉代山 | Thin Solid Films |
| 2013-10 | 期刊論文 | Effects of H2O2 treatment on the optical and structural properties of ZnO nanorods and the electrical properties of conductive polymer/ZnO-nanorod arrays diodes | 楊士弘,林祐仲*,張興政,陳雅惠 | Thin Solid Films |
| 2013-10 | 期刊論文 | Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets | 林祐仲*,金益民 | Applied Physics Letters |
| 2013-10 | 期刊論文 | High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment | 阮丞禾,林祐仲* | Journal of Applied Physics |
| 2013-08 | 期刊論文 | Influence of illumination on the output characteristics in pentacene thin film transistors | 林祐仲*,黃柏傑 | Materials Chemistry and Physics |
| 2013-07 | 期刊論文 | Doping mechanism in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate):TiO2 nanoparticles composite films | 張文豪,林祐仲*,阮丞禾,劉代山 | Thin Solid Films |
| 2013-07 | 期刊論文 | Tuning the formation of p-type defects by peroxidation of CuAlO2 films | 羅傑,林祐仲*, 洪浩哲,劉嘉吉,楊曜瑋 | Journal of Applied Physics |
| 2013-07 | 期刊論文 | 二硫化鉬發展現況 | 蘇庭鋐和林祐仲* | 真空科技 |
| 2013-05 | 期刊論文 | Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer | 曾建洲,阮丞禾,林建煌,林祐仲* | Semiconductor Science and Technology |
| 2013-05 | 期刊論文 | Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes | 林祐仲*,羅傑,洪浩哲 | Applied Physics Letters |
| 2013-05 | 期刊論文 | Photovoltaic properties of n-type SnS contact on the unpolished p-type Si surfaces with and without sulfide treatment | 黃崇政,林祐仲*,劉嘉吉,楊曜瑋 | Microelectronic Engineering |
| 2013-05 | 期刊論文 | Tuning the work function of graphene by ultraviolet irradiation | 林祐仲*,曾建洲 | Applied Physics Letters |
| 2013-04 | 期刊論文 | Luminescence, structural and ferromagnetic properties of Zn1-xMnxSy films for different manganese contents | 倪維仕,林祐仲*,劉嘉吉,楊曜瑋,洪連輝 | Journal of Alloys and Compounds |
| 2013-03 | 期刊論文 | Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation | 卓偉民,林祐仲*,張興政,陳雅惠 | Microelectronic Engineering |
| 2013-03 | 期刊論文 | Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors | 林祐仲*,黃柏傑 | Microelectronic Engineering |
| 2013-02 | 期刊論文 | Conduction-type control of SnSx films prepared by the sol–gel method for different sulfur contents | 黃崇政,林祐仲*,莊承諭,劉嘉吉,楊曜瑋 | Journal of Alloys and Compounds |
| 2013-02 | 期刊論文 | Ferromagnetic and luminescence properties of Zn1-xMnxOy nanorods | 陳佳宏,林祐仲*,張興政,陳雅惠,洪連輝,張家齊 | Solid State Communications |
| 2013-02 | 期刊論文 | Hybrid diodes based on n-type Ge and conductive polymer doped by graphene oxide sheets with and without reduction treatment | 曾建洲,林祐仲* | Journal of Applied Physics |
| 2013-01 | 期刊論文 | Carrier Transport and Charge Detrapping in Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-Type Si and Polyaniline/n-Type Si Diodes | 林祐仲*,游長峯,莊承諭 | ECS Journal of Solid State Science and Technology |
| 2013-01 | 期刊論文 | Effect of Co content on magnetic and optical properties of Zn(1-x)CoxOy nanorods | 陳佳宏,林祐仲*,張興政,陳雅惠,洪連輝,張家齊 | Journal of Alloys and Compounds |
| 2013-01 | 期刊論文 | Output and transfer instabilities observed in pentacene-based organic thin film transistors | 黃柏傑,林祐仲* | Journal of Science and Innovation |
| 2012-12 | 期刊論文 | Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes | 何冠儒,林祐仲*,張興政,陳雅惠 | Thin Solid Films |
| 2012-12 | 期刊論文 | 摻雜還原氧化石墨烯於有機材料PEDOT:PSS與n型鍺之光伏元件 | 曾建洲,林祐仲* | 真空科技 |
| 2012-09 | 期刊論文 | Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H2O2 treatment | 何冠儒,林祐仲* | Materials Chemistry and Physics |
| 2012-09 | 期刊論文 | Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn(1-x)CoxSy films | 倪維仕,林祐仲* | Journal of Applied Physics |
| 2012-09 | 期刊論文 | Electronic properties of annealed pentacene films in air at various temperatures up to 400 K | 曹侯焱,林祐仲* | Applied Physics Letters |
| 2012-09 | 期刊論文 | Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs | 曾建洲,蔡丞龍,林祐仲* | Synthetic Metals |
| 2012-08 | 期刊論文 | Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors | 蔡明穎,林祐仲* | Microelectronic Engineering |
| 2012-08 | 期刊論文 | Enhancement of the carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by incorporating reduced graphene oxide | 林祐仲*,曾建洲,蔡丞龍 | Applied Physics Letters |
| 2012-07 | 期刊論文 | Hall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperature | 林祐仲*,曹侯焱,劉代山 | Applied Physics Letters |
| 2012-06 | 期刊論文 | Carrier transport mechanism of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by incorporating ZnO nanoparticles | 林祐仲*,蔡丞龍,蘇郁超,劉代山 | Applied Physics Letters |
| 2012-06 | 期刊論文 | Comment on “Open-circuit voltage dependency on hole-extraction layers in planar heterojunction organic solar cells” [Appl. Phys. Lett. 99, 023308 (2011)] | 林祐仲* | Applied Physics Letters |
| 2012-04 | 期刊論文 | Current transport mechanism of heterojunction diodes based on the reduced graphene oxide-based polymer composite and n-type Si | 林建煌,曾建洲,蘇郁超,林祐仲* | Applied Physics Letters |
| 2012-04 | 期刊論文 | Dependence of luminescent properties and crystal structure of Li-doped ZnO nanoparticles upon Li content | 曾宇志,林祐仲*,張興政,陳雅惠,劉嘉吉,Yi-Yan Zou | Journal of Luminescence |
| 2012-04 | 期刊論文 | Modification of the electrical properties of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) upon doping of ZnO nanoparticles of different content | 林祐仲*,蘇郁超 | Journal of Applied Physics |
| 2012-03 | 期刊論文 | Transparent high-surface-work-function Al-doped CdO electrodes obtained by rf magnetron sputtering with oxygen flow | 卓偉民,何冠儒,蘇庭鋐,林祐仲* | Applied Surface Science |
| 2012-02 | 期刊論文 | Comment on “photovoltaic action in polyaniline/n-GaN Schottky diodes” [Appl. Phys. Express 2 (2009) 092201] | 游長峯,林祐仲* | Applied Physics Express |
| 2012-02 | 期刊論文 | On the origin of the ferromagnetism in Zn0.8Mn0.2O having a higher Curie temperature than Zn0.8Co0.2O | 蔡佳龍,林祐仲*,陳佳宏,張興政,陳雅惠,洪連輝,石豫臺 | Solid State Communications |
| 2012-02 | 期刊論文 | Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device | 林祐仲*,蘇庭鋐,林榮鍾,蘇郁超 | Synthetic Metals |
| 2012-01 | 期刊論文 | Effects of Ti content on the optical and structural properties of the Ti-doped ZnO nanoparticles | 曾宇志,林祐仲*,張興政,陳雅惠,劉嘉吉,Y. Y. Zou | Journal of Luminescence |
| 2011-12 | 期刊論文 | 應用在光電元件的光捕捉與光萃取技術 | 游長峯,林祐仲* | 真空科技 |
| 2011-12 | 期刊論文 | 鋁摻雜氧化鋅奈米粒子光電特性之研究 | 陳耀銘,林祐仲* | 真空科技 |
| 2011-09 | 期刊論文 | Effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors | 黃柏傑,林祐仲* | Applied Physics Letters |
| 2011-09 | 期刊論文 | Effects of ultraviolet treatment on the optical and structural properties of ZnO nanoparticles | 蔡佳龍,曾宇志,卓偉民,林祐仲*,張興政,陳雅惠,林秋熏 | Materials Chemistry and Physics |
| 2011-07 | 期刊論文 | Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination | 蔡佳龍,蔡丞龍,何冠儒,蘇庭鋐,游長峯,林祐仲* | Solid-State Electronics |
| 2011-07 | 期刊論文 | Effects of Na content on the luminescence behavior, conduction type and crystal structure of Na-doped ZnO films | 賴建仲,林祐仲*,陳雅惠,張興政,劉嘉吉,Y. Y. Zou,石豫台,M. C. Wang | Journal of Applied Physics |
| 2011-07 | 期刊論文 | 探討氧化鎘薄膜於不同退火環境之導電型態及晶格結構變化的原因 | 蔡佳龍,林祐仲* | 真空科技 |
| 2011-07 | 期刊論文 | 石墨烯發展現況 | 曾建洲,林祐仲* | 真空科技 |
| 2011-04 | 期刊論文 | Comment on “Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment” [Appl. Phys. Lett. 97, 203508 (2010)] | 林祐仲*,蔡佳龍 | Applied Physics Letters |
| 2011-04 | 期刊論文 | Leakage currents through In/MgO/n-type Si/In structures | 曹侯焱,林祐仲*,陳雅惠,張興政 | Solid State Communications |
| 2010-12 | 期刊論文 | Leakage conduction mechanism of top-contact organic thin film transistors | 林祐仲* | Synthetic Metals |
| 2010-11 | 期刊論文 | Discrepancy in mobility extracted from transfer and output characteristics of organic thin film transistors | 林祐仲*,蔡佳龍,黃柏傑 | Applied Physics Letters |
| 2010-11 | 期刊論文 | Enhancement of the hole mobility and concentration in pentacene by oxygen plasma treatment | 林啟信,林祐仲* | Journal of Non-Crystalline Solids |
| 2010-10 | 期刊論文 | Effects of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si diodes | 金益民,林榮鍾,林祐仲*,吳國禎 | Solar Energy Materials and Solar Cells |
| 2010-10 | 期刊論文 | Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes | 林祐仲 | Thin Solid Films |
| 2010-10 | 期刊論文 | Pentacene ohmic contact on the transparent conductive oxide films | 朱建安,曾建洲,吳國禎,林祐仲* | Thin Solid Films |
| 2010-08 | 期刊論文 | Comment on “Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor” [Appl. Phys. Lett. 91, 083513 (2007)] | 林祐仲 | Applied Physics Letters |
| 2010-07 | 期刊論文 | Defects, stress and abnormal shift of the (002) diffraction peak for Li-doped ZnO films | 林祐仲*,王木山,劉嘉吉,黃雪蓉 | Applied Surface Science |
| 2010-06 | 期刊論文 | Band bending at the conducting polymer/indium tin oxide interfaces with and without ultraviolet treatment | 林祐仲*,金益民,林榮鍾,蘇郁超 | Applied Surface Science |
| 2010-06 | 期刊論文 | Effects of Li content on the structural, optical, and electrical properties of LiZnMgO films | 蔡佳龍,王木山,陳雅惠,張興政,劉嘉吉,李清庭,石豫台,H. J. Huang,林祐仲* | Journal of Applied Physics |
| 2010-06 | 期刊論文 | 五環素沉積於有無氧電漿處理之氧化銦錫的歐姆接觸特性分析 | 曾建洲,朱建安,林祐仲* | 真空科技 |
| 2010-04 | 期刊論文 | Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer | 林祐仲*,鄭美娟,曾建洲 | Applied Surface Science |
| 2010-04 | 期刊論文 | Effects of oxygen deficiency in the sol–gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices | 陳巍中,林祐仲*,陳雅惠,張興政 | Semiconductor Science and Technology |
| 2010-02 | 期刊論文 | Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment | 林祐仲*,朱建安,蘇郁超,李清庭,張興政 | Thin Solid Films |
| 2009-08 | 期刊論文 | Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with the conducting polymer | 林祐仲*,黃柏傑,練義鈞,李清庭,蔡佳龍,張興政 | Journal of Physics D: Applied physics |
| 2009-08 | 期刊論文 | Ferromagnetism study of Co0.2MgxZn0.8−xO films prepared by the sol–gel method | 林祐仲*,蔡佳龍,劉嘉吉,洪連輝,石豫臺,王木山,Chuan-Sheng Jhang,黃昭憲 | Journal of Sol-Gel Science and Technology |
| 2009-07 | 期刊論文 | Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces | 林祐仲*,蔡佳龍,劉維仁,謝文峰,徐佳鴻,曹侯焱,朱建安,張興政 | Journal of Applied Physics |
| 2009-07 | 期刊論文 | Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region | 林祐仲 | Journal of Applied Physics |
| 2009-06 | 期刊論文 | Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8xO films | 蔡佳龍,林祐仲*,劉嘉吉,洪連輝,石豫臺,王木山,黃昭憲,Chuan-Sheng Jhang,陳雅惠,張興政 | Applied Surface Science |
| 2009-05 | 期刊論文 | Effects of (NH4)2Sx treatment on the electrical and optical properties of indium tin oxide/conducting polymer electrodes | 林祐仲*,劉倍源,金益民 | Thin Solid Films |
| 2009-04 | 期刊論文 | Comment on “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature” [Appl. Phys. Lett. 94, 013503 (2009)] | 林祐仲 | Applied Physics Letters |
| 2009-04 | 期刊論文 | Low-resistance nonalloyed ohmic contacts on undoped ZnO films grown by pulsed-laser deposition | 蔡佳龍,林祐仲*,金益民,劉維仁,謝文峰,徐嘉鴻,朱建安 | Journal of Physics D: Applied Physics |
| 2009-03 | 期刊論文 | High-barrier rectifying contacts on undoped ZnO films with (NH4)2Sx treatment owing to Fermi level pinning | 林祐仲*,張士陞,張興政,劉陽春 | Journal of Physics D: Applied Physics |
| 2009-01 | 期刊論文 | Hysteresis mechanism in current-voltage characteristics of ZrOx films prepared by the sol-gel method | 林祐仲*,陳巍中,金益民,劉嘉吉 | Journal of Physics D: Applied Physics |
| 2008-10 | 期刊論文 | Effects of Ultraviolet Irradiation on Conductivity of Pentacene and Contact Resistivity of Au/Pentacene | 林祐仲*,楊富名,周維揚,張傑 | Japanese Journal of Applied Physics |
| 2008-08 | 期刊論文 | Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method | 林祐仲*,陳巍中,張興政等 | Journal of Crystal Growth |
| 2008-08 | 期刊論文 | Mechanisms of enhancing magnetic properties of Zn1-xCoxO films prepared by the sol-gel method | 林祐仲*,蔡佳龍,陳巍中等 | Journal of Crystal Growth |
| 2008-08 | 期刊論文 | Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN | 林祐仲*,簡鳳佐,李清庭,林啟信,劉陽春 | Journal of Physics D: Applied Physics |
| 2008-07 | 期刊論文 | Comment on “Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 92, 012104 (2008)] | 林祐仲 | Applied Physics Letters |
| 2008-06 | 期刊論文 | Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method | 林祐仲*,吳秉勳,蔡佳龍,劉嘉吉..等 | Journal of Applied Physics |
| 2008-05 | 期刊論文 | Electronic transport and Schottky barrier height of Ni contact on p-type GaN | 林祐仲*,李清庭,張士陞,張興政 | Journal of Physics D: Applied Physics |
| 2008-05 | 期刊論文 | Mechanisms of enhancing band-edge luminescence of Zn1-xMgxO prepared by the sol-gel method | 林祐仲*,吳秉勳,蔡佳龍,劉嘉吉,李清庭,張興政等 | Journal of Physics D: Applied Physics |
| 2008-03 | 期刊論文 | Hysteresis-type current-voltage characteristics of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices | 林祐仲 | Journal of Applied Physics |
| 2008-01 | 期刊論文 | Comment on “Schottky contact on a ZnO (0001) single crystal with conducting polymer” [Appl. Phys. Lett. 91, 142113 (2007)] | 林祐仲 | Applied Physics Letters |
| 2007-11 | 期刊論文 | Effects of ultraviolet irradiation on energy band structure and conductivity of polyaniline | 林祐仲*,楊富名,林啟信 | Journal of Applied Physics |
| 2007-09 | 期刊論文 | Comment on “p-type behavior from Sb-doped ZnO heterojunction photodiodes” [Appl. Phys. Lett. 88, 112108 (2006)] | 林祐仲*,吳秉勳,劉代山 | Applied Physics Letters |
| 2007-08 | 期刊論文 | Increasing the work function of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by ultraviolet irradiation | 林祐仲*,楊富名,黃啟炎,周維楊,張傑,練義鈞 | Applied Physics Letters |
| 2007-06 | 期刊論文 | Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (NH4)2Sx treatment | 蔡佳龍,林祐仲*,吳秉勳,陳叔佑,劉代山,洪家煌,劉嘉吉,石豫台,J. M. Cheng,張興政 | Journal of Applied Physics |
| 2007-05 | 期刊論文 | Excimer laser irradiation induced suppression of off-state leakage current in organic transistors | 周維揚*,S. T. Lin,H. L. Cheng,F. C. Tang, 林祐仲,游長峯,王右武 | Applied Physics Letters |
| 2007-03 | 期刊論文 | Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) | 林祐仲*,張興政,劉倍源 | Applied Physics Letters |
| 2007-02 | 期刊論文 | Comment on “Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment” [J. Appl. Phys. 95, 586 (2004)] | 林祐仲 | Journal of Applied Physics |
| 2007-02 | 期刊論文 | Effects of (NH4)2Sx treatment on surface work function and roughness of indium-tin-oxide | 林祐仲*,游長峰,蔡佳龍 | Applied Surface Science |
| 2007-02 | 期刊論文 | Effects of Sulfide Treatment of Indium Tin Oxide on Efficiency of Polymer Light-Emitting Diodes | 林祐仲*,周維揚,林士廷,游長峰,蔡佳龍 | Japanese Journal of Applied Physics |
| 2007-01 | 期刊論文 | Comment on “Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts” [Appl. Phys. Lett. 89, 033503 (2006)] | 林祐仲*,蔡佳龍,劉代山 | Applied Physics Letters |
| 2006-12 | 期刊論文 | Changes in surface band bending, surface work function, and sheet resistance of undoped ZnO films due to (NH4)2Sx treatment | 林祐仲*和蔡佳龍 | Journal of Applied Physics |
| 2006-12 | 期刊論文 | True dipole at the indium tin oxide/organic semiconductor interface | 林祐仲*,洪家煌,練義鈞,劉倍源 | Applied Physics Letters |
| 2006-10 | 期刊論文 | Comment on “Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN” [J. Appl. Phys. 95, 7940 (2004)] | 林祐仲 | J. Appl. Phys. |
| 2006-10 | 期刊論文 | Comment on “Electrospun hybrid organic/inorganic semiconductor Schottky nanodiode” [Appl. Phys. Lett. 89, 033505 (2006)] | 林祐仲 | Appl. Phys. Lett. |
| 2006-10 | 期刊論文 | Hole-transport barrier and band-bending at the indium tin oxide/polymer/p-AlGaN interface | 林祐仲 | Applied Physics Letters |
| 2006-09 | 期刊論文 | Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers | 朱宥霖,林祐仲*,何呈祥,陳偉立 | Jpn. J. Appl. Phys. |
| 2006-09 | 期刊論文 | Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin-oxide substrates | 林祐仲*,游長峰,周維揚和林士廷 | Electrochemical and Solid-State Letters |
| 2006-08 | 期刊論文 | Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment | 林祐仲*,李清庭,張興政 | Semiconductor Science and Technology |
| 2006-08 | 期刊論文 | Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using ohmic recessed technique | 林祐仲*,朱宥霖 | Semiconductor Science and Technology |
| 2006-05 | 期刊論文 | Optical and electrical properties of undoped ZnO films | 林祐仲*,蔡佳龍,盧陽明,劉嘉吉 | J. Appl. Phys. |
| 2006-04 | 期刊論文 | Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer | 林祐仲*,林文祥,李清庭,張興政 | Jpn. J. Appl. Phys. |
| 2006-04 | 期刊論文 | Induced changes in surface band bending of n-type and p-type AlGaN by oxidation and wet chemical treatments | 林祐仲*,朱宥霖,林文祥,簡鳳佐,李騏宣 | J. Appl. Phys |
| 2006-03 | 期刊論文 | Enhancement of Schottky barrier height on p-type GaN by(NH4)2Sx treatment | 林祐仲*,游長峯,李騏宣 | J. Appl. Phys. |
| 2006-02 | 期刊論文 | Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment | 林祐仲*,林文祥,李清庭,簡鳳佐 | Solid State Communications |
| 2006-02 | 期刊論文 | Enhanced efficiency in polymer light-emitting diodes due to the improvement of charge-injection balance | 林祐仲*,周維揚,林士廷 | Applied Physics Letters |
| 2006-01 | 期刊論文 | Nonalloyed ohmic formation for p-type AlGaN with p-type GaN capping layers using ohmic recessed technique | 林祐仲 | Jpn. J. Appl. Phys. |
| 2006-01 | 期刊論文 | Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching | 林祐仲*,朱宥霖,劉代山,李騏宣,簡鳳佐, | Jpn. J. Appl. Phys. |
| 2005-09 | 期刊論文 | Changes in surface roughness and work function of indium-tin-oxide due to KrF excimer laser irradiation | 林祐仲 | J. Vac. Sci. Technol. A |
| 2005-09 | 期刊論文 | Influence of KrF excimer laser irradiation on luminescent performance of polymer light-emitting diodes | 林祐仲*,周維揚,林士廷,陳耀銘 | Jpn. J. Appl. Phys. |
| 2005-05 | 期刊論文 | Comment on “Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy” [Appl. Phys. Lett. 86, 042104 (2005)] | 林祐仲 | Appl. Phys. Lett. |
| 2005-05 | 期刊論文 | Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN | 林祐仲*,朱宥霖 | J. Appl. Phys. |
| 2005-05 | 期刊論文 | Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment | 林祐仲*,朱宥霖,黃鶯聲,張興政 | Applied Physics Letters |
| 2005-04 | 期刊論文 | Effects of KrF excimer laser irradiation on surface work function of indium-tin-oxide | 林祐仲*,陳耀銘,王泳麒 | J. Appl. Phys. |
| 2005-03 | 期刊論文 | Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements | 林祐仲 | Applied Physics Letters |
| 2005-03 | 期刊論文 | Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation | 林祐仲*,許洲維,陳耀銘,王泳麒 | J. Electron. Mater. |
| 2005-01 | 期刊論文 | Electrical properties of Ni/Au and Au contacts on p-type GaN | 林祐仲 | J. Vac. Sci. Technol. B |
| 2004-09 | 期刊論文 | Comment on “Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)] | 林祐仲*,曾治國 | Appl. Phys. Lett. |
| 2004-09 | 期刊論文 | Study of Schottky barrier heights of indium-tin-oxide on p-GaN using x-ray photoelectron spectroscopy and current-voltage measurements | 林祐仲*,許洲維 | J. Electron. Mater. |
| 2004-04 | 期刊論文 | Activation mechanism of annealed Mg-doped GaN in air | 林祐仲* | Appl. Phys. Lett. |
| 2004-04 | 期刊論文 | Excimer-laser-induced activation of Mg-doped GaN layers | 林祐仲*,劉文豐,李清庭 | Appl. Phys. Lett. |
| 2004-03 | 期刊論文 | Electrical properties of Pt contacts on p-GaN activated in air | 林祐仲*,吳國禎 | Appl. Phys. Lett. |
| 2004-01 | 期刊論文 | Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed ohmic contacts to n-GaN | 林祐仲*,陳耀銘,鄭子仲,柯焜騰 | J. Appl. Phys. |
| 2003-12 | 期刊論文 | Comment on “Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing”[Appl. Phys. Lett. 82, 4301 (2003)] | 林祐仲*,吳國禎 | Appl. Phys. Lett. |
| 2003-08 | 期刊論文 | Comment on “Thermal stable Ir Schottky contact on AlGaN/GaN heterostructure” [Appl. Phys. Lett. 82, 391 (2003)] | 林祐仲* | Appl. Phys. Lett. |
| 2003-08 | 期刊論文 | Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes | 林祐仲*,柯焜騰,何靖堯,張興政,簡鳳佐 | J. Appl. Phys. |
| 2003-05 | 期刊論文 | Investigation of accumulated carrier mechanism on sulfurated GaN layers | 林祐仲,C. S. Lee, C. T. Lee* | J. Appl. Phys. |
| 2003-05 | 期刊論文 | Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air | 李清庭*,林祐仲,李宗信 | J. Electron. Mater. |
| 2003-04 | 期刊論文 | Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN | 林祐仲*,李振道,許洲維,簡鳳佐,李清庭,邵勝添,張興政 | Appl. Phys. Lett. |
| 2002-12 | 期刊論文 | Surface band bending, nitrogen-vacancy-related defects and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN | 林祐仲*,王志龍,張興政 | Appl. Phys. Lett. |
| 2002-10 | 期刊論文 | Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH4)2Sx–treated n-type GaN layers | 李清庭*,林祐仲,林駿宏 | J. Appl. Phys. |
| 2001-12 | 期刊論文 | Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers | 李騏宣,林祐仲,李清庭* | Appl. Phys. Lett. |