出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
2018-10 |
期刊論文
|
Structural evolution of gypsum under high pressure: Single-crystal X-ray experiments revisited |
T. L. Li and P. L. Lee |
Phys. Chem. Minerals
|
2016-11 |
期刊論文
|
Structural effects on the electronic characteristics of intramolecularly intercalated alkali-rubrene complexes |
T. L. Li and W. C. Lu |
Mater. Chem. Phys.
|
2016-06 |
期刊論文
|
Structural and electronic characteristics of intercalated monopotassium-rubrene: Simulation on a commodity computing cluster |
T. L. Li and W. C. Lu |
J. Theor. Comput. Chem.
|
2015-10 |
期刊論文
|
Application of Koopmans' theorem for density functional theory to full valence-band photoemission spectroscopy modeling |
T. L. Li and W. C. Lu |
Spectrochim. Acta Part A
|
2015-06 |
期刊論文
|
Geometric and electronic structures of potassium-adsorbed rubrene complexes |
T. L. Li and W. C. Lu |
J. Chem. Phys.
|
2013-03 |
期刊論文
|
Electronic structures of pristine and potassium-doped rubrene thin films |
C.-P. Cheng, T.L. Li, C.-H. Kuo, T.-W. Pi |
Organic Electronics
|
2011-12 |
期刊論文
|
Construction of a high-performance computing cluster: A curriculum for engineering and science students |
M. H. Chen and T. L. Li* |
Comput. Appl. Eng. Educ.
|
2011-10 |
專書
|
A Practical Guide to Building High-Performance Computing Clusters |
T. L. Li* |
Lambert Academic Publishing
|
2011-07 |
期刊論文
|
Electronic structures and work functions of BC3 nanotubes: A first-principle study |
W. S. Su, C. P. Chang, M. F. Lin*, and T. L. Li* |
J. Appl. Phys.
|
2011-06 |
期刊論文
|
Justification of the total ionic pseudopotentials in first-principle methods |
T. L. Li* and W. S. Su |
Chin. J. Phys.
|
2010-11 |
期刊論文
|
High-frequency wireless communications system: 2.45-GHz front-end circuit and system integration |
M. H. Chen, M. C. Huang, Y. C. Ting, H. H. Chen, and T. L. Li* |
IEEE Trans. Educ.
|
2010-10 |
期刊論文
|
Determination of the Fermi-level subband indices of single-wall carbon nanotubes |
T. L. Li* and J. H. Ting |
Chin. J. Phys.
|
2010-07 |
期刊論文
|
Soft limiting circuit implementable with a single multi-walled carbon nanotube |
M. H. Chen, J. H. Ting, B. Z. Yang, S. Y. Yang, and T. L. Li* |
Appl. Phys. A
|
2009-06 |
期刊論文
|
Multiple negative differential resistance in crossed carbon nanotubes |
M. Al Ahmad, D. Dragoman, M. Dragoman*, R. Plana, J. H. Ting, F. Y. Huang, and T. L. Li |
J. Appl. Phys.
|
2007-06 |
期刊論文
|
Conducting properties of suspended carbon nanotubes grown by thermal chemical vapor deposition |
T. L. Li*, J. H. Ting, B. Z. Yang |
J. Vac. Sci. Technol. B
|
2007-04 |
期刊論文
|
An exhaustive classification scheme for single-wall carbon nanotubes |
T. L. Li*, J. H. Ting |
Physica B
|
2006-10 |
期刊論文
|
Parallelizable simulation of material effects of the chemical shrink process of nanofabrication |
T. L. Li*, J. H. Ting, C. Y. Kung |
Jpn. J. Appl. Phys.
|
2006-08 |
期刊論文
|
Comment on `Thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography' |
T. L. Li*, J. H. Ting |
Jpn. J. Appl. Phys.
|
2006-07 |
期刊論文
|
Dependence of field emission properties of carbon nanotube films on their graphitization |
J. H. Ting*, T. L. Li, Y. C. Hong |
J. Vac. Sci. Technol. B
|
2005-10 |
期刊論文
|
Reaction-diffusion mechanisms for the chemical shrink process of nanofabrication |
T. L. Li*, J. H. Ting |
Chem. Phys. Lett.
|
2005-08 |
期刊論文
|
Temporal saturation effects of nanoscale contact holes fabricated by chemical shrink techniques |
T. L. Li*, J. H. Ting |
Jpn. J. Appl. Phys.
|
2005-07 |
期刊論文
|
Character tables for the symmetry groups of single-walled carbon nanotubes |
T. L. Li*, J. H. Ting |
J. Vac. Sci. Technol. B
|
2004-02 |
期刊論文
|
Low-dimensional semiconductors modeled by the first-order homogeneous electron gas theory |
T. L Li* |
Jpn. J. Appl. Phys.
|
2002-08 |
期刊論文
|
First-order semi-infinite electron gas model of the quantized carriers of semiconductor-insulator interface at finite temperatures |
T. L. Li*, T. W. Tang |
Phys. Rev. B
|
2002-05 |
期刊論文
|
First-order homogeneous electron gas model of semiconductors at finite temperatures |
T. L. Li* |
Phys. Rev. B
|
2002-02 |
期刊論文
|
First-order correction to the semi-infinite electron gas model of the inversion carriers at a semiconductor-insulator interface |
T. L. Li*, T. W. Tang |
Chin. J. Phys.
|
2002-01 |
期刊論文
|
Time dependence of the reaction-diffusion simulation of the postexposure bake process of deep-ultraviolet resists |
T. L. Li*, J. H. Ting |
Jpn. J. Appl. Phys.
|
2001-10 |
期刊論文
|
Extension of the homogeneous electron gas theory to first-order for semiconductors with potential gradients |
T. L. Li* |
Chin. J. Phys.
|
2001-10 |
期刊論文
|
Simulation of the postexposure bake process of chemically amplified resists by reaction-diffusion equations |
T. L. Li* |
J. Comput. Phys.
|
2001-03 |
期刊論文
|
Optimal temperature-time condition for the post-exposure bake process of deep-UV resists |
T. L. Li*, J. H. Ting |
Jpn. J. Appl. Phys.
|