| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2022-10 |
期刊論文
|
High-sensitivity position-sensitive detectors to low-power light spot |
Chia Hua Huang, Shih Wei Tan, Hao Lo, Chieh Lo, Chun Wu Chen, and Wen Shiung Lour |
Sensors and Actuatiors A: Physical
|
| 2022-09 |
期刊論文
|
Heterojunction bipolar transistors with a
planar-type extended base as a hydrogen-sensitive
sensor |
Chia-Hua Huang, Shih-Wei Tan, Hao Lo, Chieh Lo,
and Wen-Shiung Lour |
Electronics Letters
|
| 2022-09 |
期刊論文
|
Temperature dependence of sensing properties of
hydrogen-sensitive extended-base heterojunction
bipolar transistors |
Chia Hua Huang, Shih Wei Tan, Hao Lo, Chieh Lo, and
Wen Shiung Lour |
International Journal of Hydrogen Energy
|
| 2021-01 |
期刊論文
|
High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches |
Ching-Hong Chang, Yue-Chang Lin, Jing-Shiuan Niu, Wen-Shiung Lour, Jung-Hui Tsai, and Wen-Chau Liu
|
Science of Advanced Materials
|
| 2020- |
期刊論文
|
Comprehensive studies of high-linearity position-sensitivity detectors with theoretical consideration on lateral photovoltaic currents |
C. H. Huang, H. Lo, C. Lo, C. C. Hsu, and W. S. Lour*, |
IEEE J. Electron Device and Society
|
| 2019- |
期刊論文
|
Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers |
J. H. Tsai*, W. S. Lour, and W. C. Liu |
ECS Journal of Solid State Science and Technology
|
| 2019- |
期刊論文
|
Nondestructive Evaluation of Multijunction Solar Cells for Matching Currents |
C. H. Huang, H. Lo, C. Lo, C. C. Hsu, and W. S. Lour* |
IEEE J. Electron Device and Society
|
| 2016-12 |
期刊論文
|
Photovoltaic performance of Ge-subcell evaluated directly in Ge-based triple-junction solar cells |
T. H. Huang, H. Lo, C. Lo, M. C. Wu and W. S. Lour |
Journal of Solid State Science and Technology
|
| 2016-11 |
期刊論文
|
Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell |
T. H. Huang, H. Lo, C. Lo, M. C. Wu and W. S. Lour |
Solid-State Electronics
|
| 2016-10 |
期刊論文
|
Static and dynamic properties of a GaAs p-i-n
position-sensitive detector (PSD)
|
Tzu-Hsuan Huang, Hao Lo, Chieh Lo, Meng-Chyi Wu, and W. S. Lour |
Sensors & Actuators A: Physical
|
| 2013-01 |
期刊論文
|
Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture |
Chieh Lo, Shih Wei Tan, Chih Ying Wei, Jung Hui Tsai, and Wen Shiung Lour |
Internation Journal of Hydrogen Energy
|
| 2012-12 |
期刊論文
|
Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors |
Chieh Lo, Shih Wei Tan, Chih-Ying Wei, Jung Hui Tsai, Kao Yen Hsu, and Wen Shiung Lour |
International Journal of Hydrogen Energy
|
| 2012-10 |
期刊論文
|
An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage |
Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, and Jhih-Jhong Ou-Yang
|
Thin Solid Films
|
| 2012-10 |
期刊論文
|
High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode |
Jung-Hui Tsai, Chia-Hong Huang, Wen-Shiung Lour, Yi-Ting Chao, Jhih-Jhong Ou-Yang, and Jia-Cing Jhou
|
Thin Solid Films
|
| 2012-04 |
期刊論文
|
Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers |
Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, and Wen-Shiung Lour |
Semiconductors
|
| 2011--- |
期刊論文
|
A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor |
Jung-Hui Tsai*, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye |
Semiconductors
|
| 2011--- |
期刊論文
|
Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells |
Wei-Chen, Yang Chieh, Lo Chin-Ying, Wei Wen-Shiung, Lour |
IEEE Electron Device Lett
|
| 2011--- |
期刊論文
|
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles |
Tsai, Jung-Hui Guo, Der-Feng Lour, Wen-Shiung |
Semiconductors
|
| 2011--- |
期刊論文
|
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels |
Jung-Hui Tsai*, Wen-Shiung Lour, C. H. Huang, S. S. Ye, Y. C. Ma |
Electronics Letters
|
| 2011--- |
期刊論文
|
Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer |
Shih-Wei Tan, Jung-Hui Tsai, Shih-Wen Lai, Chieh Lo, Wen-Shiung Lour* |
International Journal of Hydrogen Energy
|
| 2010--- |
期刊論文
|
Hydrogen Sensor with Pd Nanoparticles upon an Interfacial Layer with Oxygen |
Chia-Hua Huang, Jung-Hui Tsai, Tzung-Min Tsai, Kuo-Yen Hsu, Wei-Chen Yang, Hsuan-Wei Huang, Wen-Shung Lour* |
Applied Physics Express
|
| 2010--- |
期刊論文
|
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure |
Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ning-Feng Dale, Wen-Shiung Lour |
Microwave and Millimeter Wave Technology (ICMMT)
|
| 2010--- |
期刊論文
|
InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure |
Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ning-Feng Dale, Wen-Shiung Lour |
IEEE Electron Device Lett
|
| 2010--- |
期刊論文
|
InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage |
Jung-Hui Tsai*, Wen-Shiung Lour, Tzu-Yen Weng, Chien-Ming Li |
Semiconductors
|
| 2010--- |
期刊論文
|
InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures |
Jung-Hui Tsai*, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai |
Semiconductors
|
| 2010--- |
期刊論文
|
Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor |
Jung-Hui Tsai*, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, Wen-Chau Liu |
Solid-State Electronics
|
| 2009-04 |
期刊論文
|
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration |
S.Y. Chiu, K.C. Liang, T.H. Huang, K.P. Liu, H.W. Huang, J.H. Tsai, W.S. Lour* |
Jpn. J. Appl. Phys.
|
| 2009--- |
期刊論文
|
Comprehensive investigation on planar type of Pd–GaN hydrogen sensors |
Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour* |
International Journal of Hydrogen Energy
|
| 2009--- |
期刊論文
|
Comprehensive investigation on planar type of Pd-GaN hydrogen sensors |
Chiu, Shao-Yen Huang, Hsuan-Wei Huang, Tze-Hsuan Liang, Kun-Chieh Liu, Kang-Ping Tsai, Jung-Hui Lour, Wen-Shiung |
International Journal of Hydrogen Energy
|
| 2009--- |
期刊論文
|
Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance |
S.Y. Chiu, H.W. Huang, T.H. Huang, K.C. Liang, K.P. Liu, J.H. Tsai, and W.S. Lour* |
Sensors and Actuators B: Chemical
|
| 2009--- |
期刊論文
|
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors |
Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Ku, Wen-Chau Liu* |
Electrochemical and Solid-State Letters
|
| 2009--- |
期刊論文
|
GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles |
S.Y. Chiu, H.W. Huang, K.C. Liang, T.H. Huang, K.P. Liu, J.H. Tsai, W.S. Lour* |
Electron. Lett.
|
| 2009--- |
期刊論文
|
High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 |
S.Y. Chiu, H.W. Huang, K.C. Liang, T.H. Huang, K.P. Liu, J.H. Tsai, W.S. Lour* |
Semiconductor Science and Technology
|
| 2009--- |
期刊論文
|
High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor |
Jung-Hui Tsai*, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo |
Semiconductors
|
| 2009--- |
期刊論文
|
Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure |
S.Y. Chiu, J.H. Tsai, H.W. Huang, K.C, Liang, T.H. Huang, K.P. Liu, T.M. Tsai, K.Y. Hsu, W.S. Lour* |
Sens. & Actuators B
|
| 2009--- |
期刊論文
|
InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer |
J.-H. Tsai, Y.-H. Lee, N.-F. Dale, W.-S. Lour* |
The European Physical Journal Applied Physics
|
| 2009--- |
期刊論文
|
InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p +/n +/p camel-like gate structure |
J.-H. Tsai*, W.-S. Lour and W.-C. Liu |
Electronics Letters
|
| 2009--- |
期刊論文
|
Integrated Hydrogen Sensing Amplifier with GaAs Schottky-type Diode and InGap-GaAs Heterojunction Bipolar Transistor |
Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tzung-Min Tsai, Kuo-Yen Hsu, Wen-Shung Lour* |
IEEE Electron Device Lett
|
| 2009--- |
期刊論文
|
Microwave complementary doped-channel field-effect transistors |
Jung-Hui Tsai*, Shao-Yen Chiu, Wen-Shiung Lour, Liu, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang |
Superlattices and Microstructures
|
| 2009--- |
期刊論文
|
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) |
Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu* |
Solid-State Electronics
|
| 2008-11 |
期刊論文
|
High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimensional dipoles (impact factor: 2.486) |
羅文雄 |
IEEE Electron Device Lett.
|
| 2008-10 |
期刊論文
|
Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/ Al0.22Ga0.78As double heterojunction high electron mobility transistors (impcat factor: 1.899) |
羅文雄 |
Semicond. Sci. Technol
|
| 2008-01 |
期刊論文
|
Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment (impact factor: 1.247) |
羅文雄 |
Jpn. J. Appl. Phys.
|
| 2008--- |
期刊論文
|
Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors(DH-HEMTs) |
Meng-Kai Hsu etal. and Wen-Shiung Lour* |
Advanced Materials Research
|
| 2008--- |
期刊論文
|
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor |
L.-Y. Chen etal. |
Semicond.Sci.Technol.
|
| 2008--- |
期刊論文
|
InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet Between Base-Emitter Junction |
J.-H. Tsai etal |
Advanced Materials Research
|
| 2008--- |
期刊論文
|
Investigation of Field-Plate Gate on Heterojunction Doped-Channel Field Effect Transistors |
Meng-Kai Hsu, Shao-Yen Chiu, Chung-Hsien Wu, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour* |
IEEE Electron Device Lett
|
| 2008--- |
期刊論文
|
Investigation on Electro-Optical Switch Using Heterojunction Phototransistors with Double Emitter |
Shao-Yen Chiu, Chung-Hsien Wu, Jung-Hui Tsai, Wen-Shiung Lour* |
IEEE Electron Device Lett
|
| 2007-11 |
期刊論文
|
Electrical Properties of the InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor (impact factor: 0.674) |
羅文雄 |
Semiconductors
|
| 2007-10 |
期刊論文
|
Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch (impact factor: 1.247) |
羅文雄 |
Jpn. J. Appl. Phys.
|
| 2007-09 |
期刊論文
|
Emitter-Induced Gain Effects on Dual-Emitter Phototransistor as an Electrooptical Switch (impact factor: 2.165) |
羅文雄 |
IEEE Trans. Electron Devices
|
| 2007-03 |
期刊論文
|
Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment (impact factor: 2.483) |
羅文雄 |
J. Electrochem. Soc
|
| 2007-02 |
期刊論文
|
Characteristics of self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field effect transistors (impact factor: 1.899) |
羅文雄 |
Semicond. Sci. & Technol
|
| 2007-02 |
期刊論文
|
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistsors (impact factor: 2.483) |
羅文雄 |
J. Electrochem. Soc
|
| 2006-12 |
期刊論文
|
InGaP/InGaAs Pseudomorphic Hetero-Doped-Channel FETs with a Field Plate and a Reduced Gate Length by Splitting Gate Metal (impact factor: 2.486) |
羅文雄 |
IEEE Electron Device Lett.
|
| 2006-12 |
期刊論文
|
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure (impact factor: 2.109 ) |
羅文雄 |
Electrochemical and Solid-State Lett
|
| 2006-11 |
期刊論文
|
Characteristics improvement for an npn-heterostructure optoelectronic switch by introducing a wide-gap layer in the collector ( impact factor: 2.483) |
羅文雄 |
J. Electrochem. Soc
|
| 2006-11 |
期刊論文
|
Characteristics of Mesa- and Air-Type In0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs with or without a Buried Gate (impact factor: 1.899 ) |
羅文雄 |
Semicond. Sci. & Technol.
|
| 2006-11 |
期刊論文
|
Performance of Al0.24Ga0.76As/In0.22Ga0.78As double heterojunction HEMTs with an as deposited and a buried gates (imapct factor: 1.899 ) |
羅文雄 |
Semicond. Sci. & Technol
|
| 2006-11 |
期刊論文
|
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor (impact factor: 1.899) |
羅文雄 |
Semicond. Sci. & Technol
|
| 2006-08 |
期刊論文
|
Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor (impact factor: 1.259 ) |
羅文雄 |
Solid-State Electronics
|
| 2006-08 |
期刊論文
|
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) (impact factor: 1.899) |
羅文雄 |
Semicond. Scie. & Technol.
|
| 2006-07 |
期刊論文
|
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage (impact factor 1.899) |
羅文雄 |
Semicond. sci & Technol
|
| 2006-07 |
期刊論文
|
Gate-metal formation-related kink effect and gate current on In0.5Ga0.5As/in0.5Al0.5As metamorphic high electron mobility transistor performance (impact factor: 3.596 ) |
羅文雄 |
Appl.Phy. Lett
|
| 2006-06 |
期刊論文
|
Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor (impact factor : 1.247) |
羅文雄 |
Japanese Journal of Applied Physics
|
| 2006-05 |
期刊論文
|
Extrinsic base surfact-passivated dual-emitterheterojunction photoransistors (impact factor: 1.344) |
羅文雄 |
Superlattices and Microstructures
|
| 2005-10 |
期刊論文
|
Three-Terminal Dual-Emitter Phototransistor with Both Voltage- and Power- Tunable Optical Gains (Impact factor:1.142) |
羅文雄 |
Japanese Journal of Applied Physics
|
| 2005-08 |
期刊論文
|
Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors (Impact Factor:2.152) |
羅文雄 |
Semicon. Sci. Technol.
|
| 2005-06 |
期刊論文
|
Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface (Impact Factor:0.431) |
羅文雄 |
Superlattices and Microstructures
|
| 2005-06 |
期刊論文
|
Comprehension and modeling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes (Impact Factor:2.152) |
羅文雄 |
Semicond. Sci. & Technol.
|
| 2005-02 |
期刊論文
|
Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation (Impact Factor:2.036) |
羅文雄 |
IEEE Trans. Electron Devices
|
| 2005-01 |
期刊論文
|
The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors (Impact Factor:2.255) |
羅文雄 |
J. Appl. Phys.
|
| 2004--- |
期刊論文
|
Experiments and Modeling of Double-Emitter HPTs with Different Emitter-Area Ratios for Functional Applications (Impact Factor:2.152) |
羅文雄 |
Semicond. Scie. & Technol.
|
| 2004--- |
期刊論文
|
Performance enhancement of double-emitter HPTs with different emitter-area ratios (Impact Factor:0.968) |
羅文雄 |
Electronics Lett.
|
| 2004--- |
期刊論文
|
Sub-0.25 micron gate like heterojunction doped-channel FETs with a controllable notch-angle V-gate (Impact Factor:2.152) |
羅文雄 |
Semicond. Scie. & Technol.
|
| 2004--- |
期刊論文
|
Sub-0.5-um gate doped-channel FETs with HEMT-like channel using thermally re-flowed photo-resist and spin-on-glass (Impact Factor:2.152) |
羅文雄 |
Semicond. Scie. & Technol.
|
| 2003--- |
期刊論文
|
An Investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors (Impact Factor:1.142) |
羅文雄 |
Jpn. J. Appl. Phys. Pt.I
|
| 2003--- |
期刊論文
|
Improvements in Direct-Current Characteristics of Al0.45Ga0.55As/GaAs Digital-Graded Superlattice-Emitter Heterojunction Bipolar Transistors with Reduced Turn-On Voltage by Wet-Oxidation (Impact Factor:2.036) |
羅文雄 |
IEEE T-ED
|
| 2003--- |
期刊論文
|
Optical and Electrical Characteristics of InGaP/AlGaAs/GaAs Composite Emitter Heterojunction Bipolar/Phototransistors (Impact Factor:0.431) |
羅文雄 |
Superlattices and Microstructures
|
| 2002--- |
期刊論文
|
Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage (Impact Factor:4.308) |
羅文雄 |
Appl. Phys. Lett.
|
技術移轉