| 出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
| 2022-09 |
期刊論文
|
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor |
Liu, C.-H.; Huang, C.-R.; Wang, H.-C.; Kang, Y.-J.; Chiu, H.-C.; Kao, H.-L.; Chu, K.-H.; Kuo, H.-C.; Chen, C.-T.; Chang, K.-J. |
Micromachines
|
| 2022-05 |
期刊論文
|
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate |
Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Hsien-Chin Chiu*, Hsuan-Ling Kao and Xinke Liu |
Micromachines
|
| 2022-05 |
期刊論文
|
Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer |
Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih , Hsien-Chin Chiu*, Hsuan-Ling Kao and Xinke Liu |
Materials
|
| 2021-11 |
期刊論文
|
Characteristic Analysis of AlGaN/GaN HEMT with Composit-ed Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
Chong-Rong Huang, Hsien-Chin Chiu*, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen and Kuo-Jen Chang |
Membrances
|
| 2021-11 |
期刊論文
|
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator |
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong, Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Shinn-Yn Lin |
Membrances
|
| 2021-10 |
期刊論文
|
Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer |
Chia-Hao Liu, Hsien-Chin Chiu*, Hsiang-Chun Wang, Hsuan-Ling Kao, Chong-Rong Huan |
IEEE ELECTRON DEVICE LETTERS
|
| 2021-05 |
期刊論文
|
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate |
Yu-Chun Huang , Hsien-Chin Chiu * , Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang and Si-Wen Chen, |
Micromachines
|
| 2021-03 |
期刊論文
|
A 5-bit X-band GaN HEMT-Based Phase Shifter |
Hsien-Chin Chiu, Chun-Ming Chen, Li-Chun Chang , and Hsuan-Ling Kao |
Electronics
|
| 2020-12 |
期刊論文
|
The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design” Electronics |
Chong-Rong Huang, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Hsien-Chin Chiu*, Chih-Tien Chen, Kuo-Jen Chang, |
Electronics
|
| 2020-06 |
期刊論文
|
The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate |
H.Y. Wang, H.C. Chiu*, W.C. Hsu, C.M. Liu, C.Y. Chuang, J.Z. Liu and Y.L. Huang |
Coatings
|
| 2020-05 |
期刊論文
|
AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain |
Hsuan-ling Kao, Hsien-Chin Chiu, Shuang-Hao Chuang, and H. H. Hsu, |
ECS Journal of Solid State Science and Technology
|
| 2020-05 |
期刊論文
|
High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator |
Hsiang-Chun Wang, Hsien-Chin Chiu*, Chong-Rong Huang , Hsuan-Ling Kao, Feng-Tso Chien |
Energies
|
| 2020-04 |
期刊論文
|
Low-Mg Out-Diffusion of a Normally Off p-GaN Gate High-Electron-Mobility Transistor by Using the Laser Activation Technique |
Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chong-Rong Huang, Chao-Wei Chiu, Chih-Tien Chen, Kuo-Jen Chang |
Materials Science in Semiconductor Processing
|
| 2020-03 |
期刊論文
|
Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application |
Xinke Liu, Xuanhua Deng, Xiaohua Li, Hsien-Chin Chiu*, Yuxuan Chen, V. Divakar Botcha, Min Wang, and Wenjie Yu, Chia-Han Lin |
Journal of Alloys and Compounds
|
| 2020-02 |
期刊論文
|
Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates |
Xinke Liu, Hao-Yu Wang, Hsien-Chin Chiu*, Yuxuan Chen, Dabing Li, Chong-Rong Huang, Hsuan-Ling Kao, Hao-Chung Kuo, Sung-Wen Huang Chen |
Journal of Alloys and Compounds
|
| 2020-02 |
期刊論文
|
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
Xinke Liu, Hsien-Chin Chiu*, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, and Chong-Rong Haung |
IEEE Journal of the Electron Devices Society
|
| 2020-01 |
期刊論文
|
Low Gate Lag Normally-off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal |
Chia-Hao Liu, Hsien-Chin Chiu*, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh |
Crystals
|
| 2019-12 |
期刊論文
|
Dynamic Behavior Improvement of Normally-off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process |
Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien |
IEEE Journal of the Electron Devices Society
|
| 2019-11 |
期刊論文
|
Mechanical tensile strain for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate |
Hsuan-ling Kao, Shuang-Hao Chuang, Cheng-Lin Cho, Hsien-Chin Chiu, Hou-Yu Wang, and H. H. Hsu |
Journal of Alloys and Compounds
|
| 2019-06 |
期刊論文
|
The Demonstration of Recessed Anodes AlGaN/GaN Schottky Barrier Diodes Using Microwave Cyclic Plasma Oxidation/Wet Etching Techniques |
Kuang-Po Hsueh, Hsien-Chin Chiu *, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Wen-Yen Lin |
Japanese Journal of Applied Physics
|
| 2019-02 |
期刊論文
|
Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage |
Kuang-Po Hsueh, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chih-Wei Hu, Rong Xuan |
Materials Science in Semiconductor Processing
|
| 2018-11 |
期刊論文
|
High Uniformity Normally-off p-GaN Gate HEMT Using Self-terminated Digital Etching Technique |
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Wei Hu and Rong Xuan, |
IEEE Trans. Electron Device
|
| 2018-10 |
期刊論文
|
Fully Inkjet-Printed Dual-Mode Ring Bandpass Filter Using a Cross-Bridge Structure Embedded With a Metal-Insulator-Metal Capacitor |
Cheng-Lin Cho, Hsuan-ling Kao, Yung-Hsien Wu, Hsien-Chin Chiu, and Li-Chun Chang |
IEEE Transactions on Components, Packaging and Manufacturing Technology
|
| 2018-10 |
期刊論文
|
High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique” |
Hsien-Chin Chiu, Lung-I Chou, Hsiang-Chun Wang, Hsuan-Ling Kao, Chia-Han Lin, Ji-Xian Chen, Jen-Inn Chyi, Chih-Tien Chen, Kuo-Jen Chang, |
ECS Journal of Solid State Science and Technology
|
| 2018-08 |
期刊論文
|
Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-substrate Via Technique and Backside Heat Sink Metal on Silicon-on-insulator Substrates |
Kuang-Po Hsueh, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Tien Chen, Kuo-Jen Chang, and Hsien-Chin Chiu*, |
ECS Journal of Solid State Science and Technology
|
| 2018-06 |
期刊論文
|
2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer using CMOS-Compatible Contact Materials |
Xinke Liu, Hsien-Chin Chiu*, Hao-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien |
IEEE Journal of the Electron Devices Society
|
| 2018-05 |
研討會論文
|
High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer |
Hao-Yu Wang1,Xinke Liu2, Hsien-Chin Chiu1*, Cong Hu1, Hsiang-Chun Wang1, Hsuan-Ling Kao1, Feng-Tso Chien3, |
|
| 2018-01 |
期刊論文
|
High-Performance Normally-off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design |
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan |
IEEE Journal of the Electron Devices Society
|
| 2017-11 |
期刊論文
|
“Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs |
Hsien-Chin Chiu, Min-Li Chou, Chun-Hu Cheng, Hsuan-ling Kao, Cheng-Lin Cho, |
Microelectronics Reliability
|
| 2017-11 |
期刊論文
|
RF Performance of in-situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-inch Silicon-on-Insulator (SOI) Substrate |
Hsien-Chin Chiu, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan |
IEEE Trans. Electron Device
|
| 2017-10 |
期刊論文
|
Effect of N2O/BCl3 Cyclical Recess Etching Technique Used Prior to Anode Metal Deposition in AlGaN/GaN Schottky Barrier Diodes |
Kuang-Po Hsueh, Hsiang-Chun Wang, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Feng-Tso Chien, Hsien-Chin Chiu |
ECS Journal of Solid State Science and Technology
|
| 2017-10 |
期刊論文
|
Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate |
Hsien-Chin Chiu, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Hou-Yu Wang, Jen-Inn Chyi |
Semiconductor Science and Technology
|
| 2017-10 |
研討會論文
|
InAlN/GaN HEMT Using Microwave Annealing for Low Temperature Ohmic Contact Formation |
Lung-I Chou, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu*, Jen-Inn Chyi, How-Ting Wang and Dong-Long Chiang |
|
| 2017-07 |
期刊論文
|
Effect of Various Fe-doped AlGaN Buffer Layer of AlGaN/GaN HEMTs on Si Substrate |
Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Rong Xuan, Chih-Wei Hu, and Kuang-Po Hsueh |
J. Vac. Sci. Technol. B
|
| 2017-05 |
期刊論文
|
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers |
Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Kuang-Po Hsueh |
Microelectronics Reliability
|
| 2017-05 |
期刊論文
|
Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN schottky barrier diodes with anode edge AlON spacers |
Kuang-Po Hsueh, Li-Yi Peng, Yuan-Hsiang Cheng, , Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, and Hsien-Chin Chiu* |
Journal of Alloys and Compounds
|
| 2017-04 |
期刊論文
|
Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes |
Kuang-Po Hsueh, Yuan-Hsiang Cheng, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu*,Chih-Wei Hu, Rong Xuan |
Materials Science in Semiconductor Processing
|
| 2017-03 |
期刊論文
|
A 60 GHz CMOS Frequency Tripler with Broadband Performance |
Min-Li Chou, Hsien-Chin Chiu*, Hsuan-Ling Kao and Fan-Hsiu Huang |
IEEE Microwave and Wireless Components Letters
|
| 2016-11 |
期刊論文
|
Electrical Characterization of Gate Recessed AlGaN/GaN High Electron Mobility Transistors with p-GaN Passivation Layer |
Kuang-Po Hsueh, Feng-Tso Chien, Li-Yi Peng, Chih-Wei Yang, Hou-Yu Wang, Kai-Di Mai, and Hsien-Chin Chiu* |
Journal of Vacuum Science & Technology B
|
| 2016-11 |
研討會論文
|
The Influence of AlGaN-GaN Schottky Barrier Diode with SiH4 Doping in Barrier Layer |
Jiun-Wei Chiu, Shang-Cyun Chen, Bo-Hong Li, Hsien-Chin Chiu, Rong Xuan, Chih-Wei Hu |
|
| 2016-09 |
研討會論文
|
Effects of Different Fe-doped GaN Buffer in AlGaN/GaN HEMTs on Si Substrate |
Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Hsien-Chin Chiu*, Rong Xuan, Chih-Wei Hu, |
|
| 2016-05 |
期刊論文
|
Temperature Dependency and Reliability of Through Substrate Via InAlN/GaN High Electron Mobility Transistors as Determined Using Low Frequency Noise Measurement |
Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng |
Japanese Journal of Applied Physics
|
| 2016-05 |
期刊論文
|
The ESD Protection Characteristic and Low-Frequency Noise Analysis of GaN Schottky Diode with Fluorine-Based Plasma Treatment |
Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien |
Microelectronics Reliability
|
| 2016-04 |
期刊論文
|
Normally-off Matrix Layout p-GaN GATE AlGaN/GaN Power HEMT with Through Substrate Via Process |
Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Kai-Di Mai, Hsuan-Ling Kao, Chien-Kai Tung, Tsung-Cheng Chang, Schang-jing Hon, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng, |
Journal of Vacuum Science & Technology B
|
| 2016-03 |
期刊論文
|
High Thermal Stability of GaN Schottky Diode with Diamond-like Carbon (DLC) Anode Design |
Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Yuan-Hsiang Cheng, Hsiang-Chun Wang, Hsuan-Ling Kao, and Jen-Inn Chyi |
Journal of The Electrochemical Society
|
| 2016-02 |
期刊論文
|
The Characterization of InAlN/AlN/GaN HEMTs using Silicon-on-Insulator (SOI) Substrate Technology |
Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao,G.-Y. Lee and Jen-Inn Chyi, |
Journal of The Electrochemical Society
|
| 2015-05 |
研討會論文
|
“Micromachined p-GaN Gate Normally-off Power HEMT with an Optimized Air-bridge Matrix Layout Design” (Best Poster Presentation) |
Chih-Wei Yang, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chien-Kai Tung, Tsung-Cheng Chang and Schang-jing Hon, |
|
| 2015-04 |
期刊論文
|
Device Stress Evaluation of InAs/AlSb HEMT on Silicon Substrate with Refractory Iridium Schottky Gate Metal |
Hsien-Chin Chiu, Wen-Yu Lin, Chia-Yi Chou, Shih-Hsien Yang, Kai-Di Mai, Pei-chin Chiu, W. J. Hsueh, and Jen-Inn Chyi |
Microelectronic Engineering
|
| 2015-04 |
期刊論文
|
The Device Characteristics of Ir- and Ti-Based Schottky Gates AlSb/InAs High Electron Mobility Transistors” |
Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, and Jen-Inn Chyi |
Microelectronics Reliability
|
| 2015-02 |
期刊論文
|
Analysis of the Back-Gate Effect in Normally-off p-GaN Gate High Electron Mobility Transistor |
Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Yue-Ming Hsin, Jen-Inn Chyi |
IEEE Transactions on Electron Devices
|
| 2015-02 |
期刊論文
|
Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals |
Hsien-Chin Chiu, Chia-Hsuan Wu, Che-Kai Lin, Feng-Tso Chien, |
Materials Science in Semiconductor Processing
|
| 2015-01 |
期刊論文
|
High Performance Micromachined GaN on Si HEMT with Backside Diamondlike-Carbon/Titanium Heat Dissipation Layer |
Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Hsuan-Ling Kao, Nai-Chuan Chen, Feng-Tso Chien, Ming-Chi Kan, |
Applied Physics Express
|
| 2015-01 |
期刊論文
|
N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator |
Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, J.-I. Chyi,and G.-Y. Lee |
Microelectronics Reliability
|
| 2014-07 |
期刊論文
|
Inkjet printed series-fed two-dipole antenna comprising a balun filter on liquid crystal polymer substrate |
H. L. Kao, C. S. Yeh, X. Y. Zhang, C. L. Cho, X. Dai, B. H. Wei, L .C. Chang, H. C. Chiu |
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY
|
| 2014-06 |
期刊論文
|
Bending effect of an inkjet-printed series-fed two-dipole antenna on a liquid crystal polymer substrate |
H. L. Kao, C. L. Cho, L .C. Chang, X. Y. Zhang, B. H. Wei, X. Dai, H. C. Chiu |
IEEE Antennas and Wireless Propagation Letters
|
| 2014-06 |
期刊論文
|
Device Characteristics of AlGaN/GaN MIS-HEMTs with High-k HfxZr1-xO2(x=0.66, 0.47, 0.15) Insulator Layer |
Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Feng-Tso Chien |
Microelectronics Reliability
|
| 2014-06 |
期刊論文
|
High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs |
Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Yue-Ming Hsin, Jen-Inn Chyi, Chang-Luen Wu, Chian-Sern Chang |
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
|
| 2014-06 |
研討會論文
|
High Performance Micromachined GaN on Si HEMT with Backside
Diamondlike-Carbon/Titanium Heat Dissipation Layer |
Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, and Ming-Chi Kan |
|
| 2014-05 |
期刊論文
|
Band Offsets and Electrical Stability Characterization of Zr-doped ZnO Thin-Film Transistors with a Gd2O3 Gate Insulator |
Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, and Kuang-Po Hsueh |
Microelectronic Engineering
|
| 2014-02 |
期刊論文
|
A Novel Micromachined AlGaN/GaN Power HEMT with Air-Bridged Matrix Heat Redistribution Layer Design |
Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao, Heng-Kuang Lin |
IEEE ELECTRON DEVICE LETTERS
|
| 2014-02 |
期刊論文
|
An Investigation of Device Reliability for a Micro-machined AlGaN/GaN/Si High Electron Mobility Transistor Using Low Frequency Noise Measurement |
Hsien-Chin Chiu, Hsiang-Chun Wang, Chia-Hsuan Wu, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien |
Microelectronic Engineering
|
| 2013-12 |
期刊論文
|
Development of Electrostatic Discharge Protection Solution in GaN Technology |
Zhixin Wang, Juin J. Liou, Kuan-Liang Cho, Hsien-Chin Chiu |
IEEE ELECTRON DEVICE LETTERS
|
| 2013-11 |
期刊論文
|
Characteristics of AlGaN/GaN HEMTs with Various Field-Plate and Gate-to-Drain Extensions |
Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Fan-Hsiu Huang, Hsuan-Ling Kao and Feng-Tso Chien |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2013-09 |
期刊論文
|
Highly Thermally Stable In Situ SiNX Passivation AlGaN/GaN Enhancement-Mode High Electron Mobility Transistors Using TiW Refractory Gate Structure |
H.C. Chiu, C.H. Chen, C.W. Yang, H.L. Kao, F.H. Huang, S.W. Peng, H.K. Lin |
Journal of Vacuum Science & Technology B
|
| 2013-09 |
期刊論文
|
Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology |
Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, Kuang-Po Hsueh |
Japanese Journal of Applied Physics
|
| 2013-08 |
期刊論文
|
Sidewall Defects of AlGaN/GaN HEMTs Evaluated by Low Frequency Noise Analysis |
Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang |
Microelectronics Reliability
|
| 2013-01 |
期刊論文
|
Low Frequency Noise in Field-plate Multigate AlGaN/GaN Single-Pole-Single-Throw RF Switches on Silicon Substrate |
Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, “Low Frequency Noise in Field-plate Multigate AlGaN/GaN Single-Pole-Single-Throw RF Switches on Silicon Substrate |
Microelectronics Reliability
|
| 2013- |
期刊論文
|
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design |
Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang |
Microelectronics Reliability
|
| 2012-12 |
期刊論文
|
“Quality of Oxidation Interface of AlGaN in Enhancement-mode AlGaN/GaN High-Electron-Mobility Transistors |
Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, and Jia-Hsuan Wu, |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2012-11 |
期刊論文
|
“A Gold-free Fully Copper Metalized AlGaN/GaN Power HEMTs on Si Substrate |
Hsien-Chin Chiu, Chao-Wei Lin, , Hsuan-Ling Kao, Geng-Yen Lee, and Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, |
MICROELECTRONICS RELIABILITY
|
| 2012-11 |
期刊論文
|
“High Thermal Stability and Low Hysteresis Dispersion AlGaN/GaN MOS-HEMTs with Zirconia Film Design |
Chao-Hung Chen, Hsien-Chin Chiu*, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, |
MICROELECTRONICS RELIABILITY
|
| 2012-11 |
期刊論文
|
“Investigation of Surface Pretreatments on GaAs and Memory Characteristics of MOS Capacitors embedded with Au nano-particles |
Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai, |
MICROELECTRONICS RELIABILITY
|
| 2012-09 |
研討會論文
|
High Breakdown Voltage and Low Thermal Effect Micromachined SOI AlGaN/GaN HEMTs |
Chih-Wei Yang, Hsien-Chin Chiu, |
|
| 2012-07 |
期刊論文
|
Low Frequency Noise in Enhancement-mode GaN MOS-HEMTs by Using Stacked Al2O3/Ga2O3/Gd2O3 Gate Dielectric |
Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang and Hsuan-Ling Kao, “ |
IEEE ELECTRON DEVICE LETTERS
|
| 2012-06 |
期刊論文
|
Investigation on the thermal behavior of 0.15μm Gate-Length In0.4Al0.6As/In0.4Ga0.6As MHEMT |
Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsuan-ling Kao, Feng-Tso Chien, |
MICROELECTRONICS RELIABILITY
|
| 2012-06 |
期刊論文
|
The characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment |
Chao-Hung Chen, Chih-Wei Yang, Hsien-Chin Chiu*, Jeffrey. S. Fu |
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|
| 2012-02 |
期刊論文
|
“High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment” |
Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu, and Kuang-Po Hsueh, |
Electrochemical and Solid-State Letters
|
| 2012-01 |
期刊論文
|
“Novel GaAs Enhancement-Mode/Depletion-Mode pHEMTs Technology Using high-k Praseodymium Oxide Interlayer” |
Chao-Hung Chen, Hsien-Chin Chiu*, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien, |
MICROELECTRONICS RELIABILITY
|
| 2011-11 |
期刊論文
|
Characterization of Enhancement-mode AlGaN/GaN High Electron Mobility Transistor Using N2O Plasma Oxidation Technology |
Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu and Feng-Tso Chien |
Applied Physic Letter
|
| 2011-09 |
期刊論文
|
Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator |
Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Chau-Wei Chiu, Jeffrey S. Fu, Kuang-Po Hsueh, and Feng-Tso Chien, |
Electrochemical and Solid-State Letters
|
| 2011-03 |
期刊論文
|
High Performance 90nm Dual-Gate nMOSFETs with Field-Plate Technology |
Jeffrey S. Fu, Hsien-Chin Chiu*, Po-Yu Ke, Ting-Huei Chen, Wu-Shiung Feng |
IEEE Electron Device Letters
|
| 2011-03 |
期刊論文
|
High Performance AlGaN/GaN HEMT with Lattice Matched ZnO Gate Interlayer |
Hsien-Chin Chiu*, Che-Kai Lin, Chao-Wei Lin, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu |
Journal of the Electrochemical Society
|
| 2010-12 |
期刊論文
|
Harmonics Suppression Investigations of pHEMT Single Pole Single Throw Switches using Multi-gate Structures |
Hsien-Chin Chiu*, Chia-Shih Cheng, Jeffrey S. Fu, Kuang-Po Hsueh |
Microelectronic Engineering
|
| 2010-08 |
期刊論文
|
Optoelectronic Mixer based on Composite Transparent Gate InAlAs/InGaAs Metamorphic HEMTs |
Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsiang-Chun Wang, Yi-Chun Wu |
IEEE/OSA Journal of Lightwave Technology
|
| 2010-03 |
期刊論文
|
On-State and Off-State Breakdown Voltages in GaAs pHEMTs with Various Field-plate and Gate-recess Extension Structures |
Hsien-Chin Chiu*, Chia-Shih Cheng |
IEEE Electron Device Letter
|
| 2010-02 |
期刊論文
|
A Comparison Study of CMOS T/R Switches Using Gate/Source-terminated Field-Plate Transistors |
Chien-Cheng Wei, Hsien-Chin Chiu*, Shao-Wei Lin, Ting-Huei Chen, Jeffrey S. Fu, Feng-Tso Chien, |
Microelectronics Engineering
|
| 2010-02 |
期刊論文
|
A Wide Tuning Range 69 GHz Push-Push VCO using 0.18μm CMOS Technology |
Hsien-Chin Chiu*, Chih-Pin Kao |
IEEE Microwave and Wireless Components Letters
|
| 2010-01 |
期刊論文
|
Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs |
Hsien-Chin Chiu*, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, R. M. Lin, K.P.Hsueh |
Journal of the Electrochemical Society
|
| 2009-12 |
期刊論文
|
High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-gate Technology |
Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu |
Journal of Electrochemcial Society
|
| 2009-07 |
期刊論文
|
The Characteristics of Dual δ-Doped InGaP/InGaAs pHEMTs with Various Doping Profile |
Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin |
Journal of Electrochemical Society
|
| 2009-04 |
期刊論文
|
A High-linearity Single-Pole-Double-Throw Pseudomorphic HEMT Switch Based on Tunable Field-Plate Voltage Technology |
Hsien-Chin Chiu, Chia-Shih Cheng, Shao-Wei Lin, Chien-Cheng Wei |
IEEE Transaction on Electron Device
|
| 2008-12 |
期刊論文
|
Comprehensive Study of GaAs MOSFETs using Gadolinium Oxide and Praseodymium Oxide Layers |
Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Liann-Be Chang |
Journal of Electrochemical Society
|
| 2008-11 |
期刊論文
|
Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide Layer |
邱顯欽 |
IEEE Trans. Electron Device
|
| 2008-07 |
期刊論文
|
Enhanced optical responsivity of InAlAs/InGaAs metamorphic HEMT using ITO transparent gate technology |
邱顯欽 |
Applied Physic Letter
|
| 2008-05 |
期刊論文
|
Phase-Noise Improvement of GaAs pHEMT K-Band Voltage Controlled Oscillator Using Tunable Field-Plate Voltage Technology |
邱顯欽 |
IEEE Electron Device Letter
|
| 2008-03 |
期刊論文
|
Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2Sx Pretreatment |
邱顯欽 |
IEEE Transaction on Electron Device
|
| 2008-01 |
期刊論文
|
Power Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs |
Hsien-Chin Chiu, Chung-Wen Chen, Yuan-Chang Huang |
IEEE Trans. Electron Device
|
| 2007-10 |
期刊論文
|
A 12-GHz Low Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors |
Chien-Cheng Wei, Hsien-Chin Chiu*, Wu-Shiung Feng |
IEEE Trans. Electron Device
|
| 2007-07 |
期刊論文
|
A Low Noise 3.1 to 10.6 GHz pMOS Distributed Amplifier for Ultra-Wideband Applications |
Chien-Cheng Wei, Hsien-Chin Chiu*, Wu-Shiung Feng |
Microwave and Optical Technology Letter
|
| 2007-05 |
期刊論文
|
Compact K-band bandpass filter on high-k LiNbO3 substrate |
Chia-Sung Wu, Hsing-Chung Liu, Zhi-Ping Liu, Hsien-Chin Chiu |
Solid-State Electronics
|
| 2007-03 |
期刊論文
|
Barrier Height Enhancement of AlxGa1−xN/GaN Schottky Diodes Prepared by P2S5(NH4)2S Treatments |
Liann-Be Chang, Chia-Hwa Chang, Ming-Jer Jeng, Hsien-Chin Chiu, and Hung-Fei Kuo |
Electrochemical and Solid-State Lett
|
| 2006-12 |
期刊論文
|
Microwave Performance of AlGaAs/InGaAs Pseudomorphic HEMT with Tunable Field-Plate Voltage |
邱顯欽 |
Semiconductor Science and Technology
|
| 2006-10 |
期刊論文
|
High Linearity Performance of 0.13 um CMOS devices using Field-Plate Technology |
魏建承,邱顯欽* |
Electron Device Letter
|
| 2006-10 |
期刊論文
|
Improved Schottky Leakage Current of ln0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs Using (NH4)2Sx Treatment |
邱顯欽 |
Electrochemical Solid State Letter
|
| 2006-05 |
期刊論文
|
Microwave Performance of (Al0.3Ga0.7)0.5In0.5P, In0.5Ga0.5P, Al0.28Ga0.72As Enhancement-mode Pseudomorphic HEMT with Succinic Acid Gate Recess Process |
邱顯欽 |
Journal of the Electrochemical Society
|
| 2006-03 |
期刊論文
|
A Modified Angelov Model for InGaP/InGaAs Enhancement- and Depletion-Mode pHEMTs Using Symbolic Defined Device Technology |
邱顯欽 |
Solid State Electronics
|
| 2006-02 |
期刊論文
|
High Uniformity (Al0.3Ga0.7)0.5In0.5P/ InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess |
邱顯欽 |
Electrochemical Solid State letter
|
| 2006-01 |
期刊論文
|
High Uniformity Enhancement- and Depletion-Mode InGaP/InGaAs pHEMTs Using Selective Succinic Acid Gate Recess Process |
邱顯欽 |
Semiconductor Science and Technology
|
| 2005-12 |
期刊論文
|
Device Performance Improvement of InGaP/InGaAs DCFETs |
簡鳳佐, 邱顯欽 |
IEEE, Electron Device Lett
|
| 2005-12 |
期刊論文
|
Power and Linearity Comparisons of Gate- and Source-terminated Field-plate Pseudomorphic HEMTs |
邱顯欽 |
Semiconductor Science and Technology
|
| 2005-10 |
期刊論文
|
High Breakdown Voltage (Al0.3Ga0.7)0.5In0.5P/ InGaAs Quasi Enhancement-Mode pHEMT with Field-Plate Technology |
邱顯欽 |
IEEE, Electron Device Lett
|
| 2005-08 |
期刊論文
|
A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology |
邱顯欽 |
Solid-State Electronics
|
| 2004-05 |
期刊論文
|
K-Band Monolithic InGaP/InGaAs DCFET Amplifier Using BCB Coplanar Waveguide Technology |
邱顯欽 |
IEEE, Electron Device Letter
|
| 2004-01 |
期刊論文
|
The Microwave Power Performance Comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) Doped-Channel HFETs |
邱顯欽 |
IEEE Trans. Electron Device
|
| 2003-07 |
期刊論文
|
0.2 mm Gate-Length InGaP/InGaAs DCFET for C-Band MMIC Amplifier Applications |
邱顯欽 |
IEEE Trans. Electron Device
|
| 2003-06 |
期刊論文
|
High Performance BCB-Bridged AlGaAs/InGaAs Power HFETs |
邱顯欽 |
IEEE Trans. Electron Device
|
| 2002-01 |
期刊論文
|
Improved Device Linearity of AlGaAs/InGaAs HFETs By a Second Mesa Etching |
邱顯欽 |
IEEE, Electron Device Letter
|
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