出版年月 |
著作類別 |
著作名稱 |
作者 |
收錄出處 |
2017- |
期刊論文
|
The effect of the flipped classroom approach to OpenCourseWare instruction on students’ self‐regulation. |
Sun, Jerry Chih‐Yuan, Yu‐Ting Wu, and Wei‐I. Lee. |
British Journal of Educational Technology. (SSCI)
|
2016- |
期刊論文
|
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications. |
Ting-En Hsieh, Yueh-Chin Lin, Chung-Ming Chu, Yu-Lin Chuang, Yu-Xiang Huang, Wang-Cheng Shi, Chang-Fu Dee, Burhanuddin Yeop Majlis, Wei-I Lee, Edward Yi Chang. |
Journal of Electronic Materials.
|
2016- |
期刊論文
|
Investigations of GaN growth
on the sapphire substrate by MOCVD method with different AlN buffer
deposition temperatures |
Wei-Ching Huang, Chung-Ming Chu, Yuen-Yee Wong, Kai-Wei Chen, Yen-Ku Lin, Chia-Hsun Wu, Wei-I Lee, Edward-Yi Chang, |
Materials Science in Semiconductor Processing
|
2016- |
期刊論文
|
Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0. 53Ga0. 47As metal–oxide–semiconductor capacitor. |
Chung-Ming Chu, Yueh-Chin Lin, Wei-I Lee, Chang Fu Dee, Yuen-Yee Wong, B. Y. Majlis, Muhamad Mat Salleh, Seong Ling Yap, Edward Yi Chang. |
Applied Physics Express
|
2016- |
研討會論文
|
Learning MOOCs and Earning Credits: Learner behavioral differences |
Huan-Chueh Wu, Wei-I Lee, Yung-Chia Chang and Chi-Jer Yu |
|
2015- |
期刊論文
|
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method. |
Wei-Ching Huang, Chung-Ming Chu, Chi-Feng Hsieh, Yuen-Yee Wong, Kai-wei Chen, Wei-I Lee, Yung-Yi Tu, Edward-Yi Chang, Chang Fu Dee, B. Y. Majlis, S. L. Yap. |
Journal of Electronic Materials
|
2014-12 |
期刊論文
|
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes |
Ming-Ta Tsai, Chung-Ming Chu, Che-Hsuan Huang, Yin-Hao Wu, Ching-Hsueh Chiu, Zhen-Yu Li, Po-Min Tu, Wei-I Lee and Hao-Chung Kuo |
Nanoscale Research Letters
|
2014-08 |
研討會論文
|
Homoepitaxy on N-face GaN substrate by metalorganic chemical vapor deposition |
Yin-Hao Wu, Chung-Ming Chu, Ming-Da Tsai, Jia-Hao Du, Yen-Fu Chen and Wei-I Lee |
|
2014-04 |
研討會論文
|
Reduction of Efficiency Droop in Ultraviolet InGaN Light-Emitting Diode Grown on Freestanding GaN Substrates |
Ming-Ta Tsai, Che-Hsuan Huang, Chung-Ming Chu, Yin-Hao Wu, Ching-Hsueh Chiu, Po-Min Tu, Chien-Chung Lin, Wei-I Lee, Hao-Chung Kuo, Chun-Yen Chang |
|
2013-08 |
期刊論文
|
A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy |
Yin-Hao Wu, Chuo-Han Lee, Chung-Ming Chu, Yen-Hsien Yeh, Chan-Lin Chen, and Wei-I Lee |
Japanese Journal of Applied Physics
|
2013-04 |
研討會論文
|
Improving the internal quantum efficiency of a GaN-based light-emitting diode epitaxial layer by removing dislocations in the multiple quantum wells |
Wei-I Lee, Yen-Hsien Yeh, Chung-Ming Chu, Yin-Hao Wu, Ying-Chia Hsu, Tzu-Yi Yu |
|
2013- |
期刊論文
|
大專院校開放式課程學習者之自我調節問卷研發與編製 |
吳宥葶、孫之元、李威儀 |
人文社會學報
|
2013- |
研討會論文
|
Needs Analysis of the Meetup Function Design for Massive Open Online Course Learners in Taiwan. |
Lin, Wei-Ting, Chao-Hsiu Chen, and Wei-I. Lee. |
|
2013- |
研討會論文
|
結合開放式課程之翻轉課堂對於學習者的自我調節與學習成就影響 |
吳宥葶、孫之元、李威儀 |
|
2012- |
研討會論文
|
Elevating the internal quantum efficiency of GaN-based light-emitting diodes by removing dislocations |
Yen-Hsien Yeh, Yin-Hao Wu, Chung-Ming Chu, Ying-Chia Hsu, Tzu-Yi Yu, Chuo-Han Lee, and Wei-I Lee |
|
2012- |
研討會論文
|
Free-standing a-plane GaN substrates grown by HVPE |
Yin-Hao Wu, Yen-Hsien Yeh, Kuei-Ming Chen, Yu-jen Yang, and Wei-I Lee |
|
2012- |
研討會論文
|
大專院校開放式課程網路教學之自我調節問卷研發與編製 |
吳宥葶、孫之元、李威儀 |
|
2011-10 |
期刊論文
|
Hydrogen etching of GaN and its application to produce free-standing GaN thick films |
Yen-Hsien Yeh, Kuei-Ming Chen, Yin-Hao Wu, Ying-Chia Hsu, Tzu-Yi Yu, and Wei-I Lee |
J. Cryst. Growth
|
2011-03 |
期刊論文
|
Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy |
Kuei-Ming Chen, Yin-Hao Wu, Yen-Hsien Yeh, Chen-Hao Chiang, Kuei-You Chen, and Wei-I Lee |
J. Cryst. Growth
|
2011-01 |
期刊論文
|
Hydrogen etching on the surface of GaN for producing patterned structures |
Yen-Hsien Yeh, Kuei-Ming Chen, Yin-HaoWu, Ying-Chia Hsu and Wei-I Lee |
J. Cryst. Growth
|
2011-01 |
期刊論文
|
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer bymetalorganic chemical vapor deposition |
C.H. Chiang, K.M. Chen, Y.H. Wu, Y.S. Yeh, W.I. Lee, J.F. Chen, K.L. Lin, Y.L. Hsiao, W.C. Huang, and E.Y. Chang |
APPLIED SURFACE SCIENCE
|
2011- |
研討會論文
|
Homoepitaxy on a-plane free-standing GaN substrates by hydride vapor phase epitaxy |
Yin-Hao Wu, Kuei-Ming Chen, Yen-Hsien Yeh, Chen-Hao Chiang, Yu-jen Yang, and Wei-I Lee |
|
2011- |
研討會論文
|
Hydrogen etch of GaN and its application to produce freestanding GaN substrates |
Yen-Hsien Yeh, Kuei-Ming Chen, Yin-Hao Wu, Ying-Chia Hsu, Tzu-Yi Yu, and Wei-I Lee |
|
2011- |
研討會論文
|
Hydrogen etch of GaN and its application to produce porous GaN caves |
Wei-I Lee, Ying-Chia Hsu, Yen-Hsien Yeh, Yin-Hao Wu, and Kuei-Ming Chen |
|
2010-12 |
期刊論文
|
Method for Modulating the Wafer Bow of Free-standing GaN Substrates via Inductively Coupled Plasma Etching |
Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu, Chen-Hao Chiang, Din-Ru Yang, Chu-Li Chao,Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, Wei-I Lee |
J. Cryst. Growth
|
2010-09 |
期刊論文
|
Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy |
Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu, Chen-Hao Chiang, Din-Ru Yang, Zhong-Shan Gao, Chu-Li Chao, Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, and Wei-I Lee |
Jpn. J. Appl. Phys
|
2010- |
研討會論文
|
Direct growth of GaN thick film with different low-temperature buffer layers on bare sapphire by hydride vapor phase epitaxy |
Yin-Hao Wu, Kuei-Ming Chen, Yen-Hsien Yeh, Chen-Hao Chiang, Jhong-Wei Chen, and Wei-I Lee |
|
2010- |
研討會論文
|
High Quality Free-standing GaN Thick-films Prepared by Hydride Vapor Phase Epitaxy Using Stress Reducing Techniques |
Wei-I Lee, Hsin-Hsiung Huang, Kuei-Ming Chen, Ting-Li Chu, Pei-Lun Wu, Hung-Wei Yu, Po-Chun Liu, Chu-Li Chao, Tung-Wei Chi, Jenq-Dar Tsay, and Li-Wei Tu |
|
2010- |
研討會論文
|
Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy |
Kuei-Ming Chen, Yin-Hao Wu, Yen-Hsien Yeh, Chen-Hao Chiang, Kuei-You Chen, and Wei-I Lee |
|
2009-05 |
期刊論文
|
Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy |
Kuei-Ming Chen, Hsin-Hsiung Huang, Yi-Lin Kuo, Pei-Lun Wu, Ting-Li Chu, Hung-Wei Yu, and Wei-I Lee |
J. Cryst. Growth
|
2009-01 |
期刊論文
|
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure |
Hsin-Hsiung Huang*, Chu-Li Chao, Tung-Wei Chi, Yu-Lin Chang, Po-Chun Liu,Li-Wei Tu, Jenq-Dar Tsay, Hao-Chung Kuo, Shun-Jen Cheng*, Wei-I Lee |
J. Cryst. Growth
|
2009- |
研討會論文
|
High quality GaN substrates manufactured by hydride vapor phase epitaxy using various stress-reducing techniques |
Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu , Chen-Hao Chiang, Din-Ru Yang, Chu-Li Chao, Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, and Wei-I Lee |
|
2009- |
研討會論文
|
Improved a-plane GaN quality grown with sandwiched AlN buffer structure on r-plane sapphire by metalorganic chemical vapor deposition |
Chen-Hao Chiang, Kuei-Ming Chen, Ching-Shih Ma, Yen-Shien Yeh,mYin-Hao Wu, Kung-Liang Lin, Yu-Lin Hsiao, Wei-Ching Huang, Edward-Yi Chang, Jenn-Fang Chen, and Wei-I Lee |
|
2009- |
研討會論文
|
Manufacturing of extremely flat free-standing GaN substrates prepared by hydride vapor phase epitaxy |
Kuei-Ming Chen, Chen-Hao Chiang, Yen-Hsien Yeh, Yin-Hao Wu, Din-Ru Yang, Chu-Li Chao, Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, and Wei-I Lee |
|
2009- |
研討會論文
|
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition and hydride vapor phase epitaxy |
Chiang, Chen-Hao; Chen, Kuei-Ming; Chu, Ting-Li; Lin, Kung-Liang; Hsiao, Yu-Lin; Huang, Wei-Ching; Chang, Edward-Yi; Chen, Jenn-Fang; Lee, Wei-I |
|
2009- |
研討會論文
|
The growth of non-polar a-plane GaN thick film by HVPE using masks with different patterns and parameters |
Yen-Hsien Yeh, Chen-Hao Chiang, Yin-Hao Wu, Ting-Li Chiu, Kuei-Ming Chen, and Wei-I Lee |
|
2009- |
研討會論文
|
The growth of non-polar a-plane GaN thick film by hydride vapor phase epitaxy using different masks and templates |
Ting-Li Chiu, Kuei-Ming Chen, Yen-Hsien Yeh, Chen-Hao Chiang, Yin-Hao Wu, and Wei-I Lee |
|
2009- |
研討會論文
|
Thick GaN film homo-epitaxially regrown on the Ga-polar face of free-standing GaN by hydride vapor-phase epitaxy |
Kuei-Ming Chen, Chen-Hao Chiang, Yen-Hsien Yeh, Yin-Hao Wu, Din-Ru Yang, Jun-Wei Chen, Zhong-Shan Gao, Chu-Li Chao, Tung-Wei Chi, Yen-Hsang Fang, Jenq-Dar Tsay, and Wei-I Lee |
|
2009- |
研討會論文
|
Thick GaN grown on nano-sized porous mask fabricated by films dewetting technique utilizing hydride vapor-phase epitaxy |
Yin-Hao Wu, Chen-Hao Chiang, Kuei-Ming Chen, Pei-Lun Wu, Yen-Hsien Yeh, and Wei-I Lee |
|
2008-12 |
專書
|
太陽電池 |
江雨龍, 李世昌, 李威儀, 周明奇, 林唯芳, 林堅楊, 曾百亨, 黃惠良, 蕭錫鍊 |
五南圖書出版股份有限公司
|
2008-11 |
期刊論文
|
A Novel Technique to Grow Crack-Free GaN Thick Films by Hydride Vapor Phase Epitaxy |
Hsin-Hsiung HUANG, Kuei-Ming CHEN, Li-Wei TU, Ting-Li CHU, Pei-Lun WU, Hung-Wei YU, Chen-Hao CHIANG, and Wei-I LEE |
Jpn. J. Appl. Phys.
|
2008-05 |
期刊論文
|
Triangular Extended Microtunnels in GaN Prepared by Selective Crystallographic Wet Chemical Etching |
Hsin-Hsiung Huang, Pei-Lun Wu, Hung-Yu Zeng, Po-Chun Liu, Tung-Wei Chi, Jenq-Dar Tsay, and Wei-I Lee |
J. Electrochem. Soc.
|
2008-04 |
期刊論文
|
Formation of nitride laser cavities with cleaved facets on transferred laser diodes on GaAs substrates |
Wen-Chien Yu, Shu-Mei Ye, Feng-Ke Hsiao, Chi-Ling Lee, and Wei-I Lee |
Phys. Stat. Sol. (C)
|
2008-04 |
期刊論文
|
Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition |
Yen-Teng Ho, Mei-Hui Liang, Feng-Ke Hsiao, Wei-Lin Wang, Chun-Yen Peng, Wei-Da Chen, Wei-I Lee, Li Chang |
J. Crystal Growth
|
2008- |
研討會論文
|
Crack free free-standing bulk GaN grown by Hydride Vapor Phase Epitaxy |
Hsin-Hsiung Huang, Chen-Hao Chiang, Kuei-Ming Chen, Ting-Li Chu, Pei-Lun Wu, Hung-Wei Yu, Wei-I Lee, and Li-Wei Tu |
|
2008- |
研討會論文
|
Freestanding GaN by hydride vapor-phase epitaxy using template weakness with laser assistance technique |
Kuei-Ming Chen, Hsin-Hsiung Huang, Chen-Hao Chiang, Pei-Lun Wu, Ting-Li Chu, Hung-Wei Yu, and Wei-I Lee |
|
2008- |
研討會論文
|
Strain reduced GaN thickfilm grown by Hydride Vapor Phase Epitaxy utilizing dot air-bridged structure |
Hsin-Hsiung Huang, Chu-Li Chao, Tung-Wei Chi, Yu-Lin Chang, Po-Chun Liu, Li-Wei Tu, Jenq-Dar Tsay, Hao-Chung Kuo, and Wei-I Lee |
|
2008- |
研討會論文
|
The bowing reduction of Freestanding GaN by N-face regrowth with hydride vapor-phase epitaxy |
Kuei-Ming Chen*, Hsin-Hsiung Huang, Feng-Ke Hsiao,Yi-Lin Kuo, Pei-Lun Wu, Ting-Li Chu, Hung-Wei Yu, and Wei-I Lee |
|
2007-05 |
期刊論文
|
Deep-level emissions in GaAsN GaAs structures grown by metal organic |
J. F. Chen, C. T. Ke, P. C. Hsieh, C. H. Chiang, W. I. Lee, and S. C. Lee |
Jpn. J. Appl. Phys.
|
2007-04 |
期刊論文
|
Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide |
Chi-Ling Lee and Wei-I Lee |
Appl. Phys. Lett
|
2007-04 |
期刊論文
|
Preparation of extended microtunnels in GaN by wet chemical etching |
Hsin-Hsiung Huang, Hung-Yu Zeng, and Wei-I Lee |
phys. stat. sol. (b)
|
2007-03 |
期刊論文
|
Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diode |
Chi-Ling LEE and Wei-I LEE |
Jpn. J. Appl. Phys.
|
2006-11 |
期刊論文
|
Extended microtunnels in GaN prepared by wet chemical etch |
Hsin-Hsiung Huang, Hung-Yu Zeng, Chi-Ling Lee, Shih-Chang Lee, and Wei-I Lee |
Appl. Phys. Lett
|
2006-01 |
期刊論文
|
Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency |
李威儀 |
Japanese Journal of Applied Physics
|
2005-06 |
期刊論文
|
Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs |
李威儀 |
Jpn. J. Appl. Phys
|
2004-10 |
期刊論文
|
Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance |
李威儀 |
Physica E
|
2003-06 |
期刊論文
|
Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments |
李威儀 |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
|
2003-04 |
期刊論文
|
Liquid Phase Deposited SiO2 on GaN |
李威儀 |
MATERIALS CHEMISTRY AND PHYSICS
|
2003-04 |
期刊論文
|
Thermal Stability of Plasma Treated Ohmic Contacts to n-GaN |
C. C. Lee, S. D. Lin, C. P. Lee, M. H. Yeh, W. I. Lee, and C. T. Kuo |
Jpn. J. Appl. Phys.
|
2001-09 |
期刊論文
|
Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
T. C. Wen and W. I. Lee |
Jpn. J. Appl. Phys.
|
2001-05 |
期刊論文
|
Activation of p-Type GaN in Pure Oxygen Ambient |
T. C. Wen, W. I. Lee, T. Y. Chen, S. H. Chan, and J. S. Tsang |
Jpn. J. Appl. Phys.
|
2000-05 |
期刊論文
|
GaInP Barrier Layer for Wet Oxidation of AlAs |
S. C. Lee and W. I. Lee |
Jpn. J. Appl. Phys.
|